公开(公告)号：US06440620B1

公开(公告)日：2002-08-27

申请号：US09679403

申请日：2000-10-04

Applicant: Victor Katsap ,  Eric Munro ,  John Andrew Rouse ,  Warren K. Waskiewicz ,  Xieqing Zhu

Inventor： Victor Katsap ,  Eric Munro ,  John Andrew Rouse ,  Warren K. Waskiewicz ,  Xieqing Zhu

IPC: G03C500

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/1534 ,  Y10S430/143

Abstract: An apparatus and method of focusing including a source for producing an electron beam, a mask and a projection column, through which the electron beam passes, and a wafer on which the electron beam is to be focused. The wafer is located in a plane where spherical aberrations of the projection column reduce the negative defocusing effect caused by chromatic aberrations in the projection column. The apparatus and method are applicable to general electron patterning tools, electron patterning tools where a thickness of the mask is smaller than an electron mean free path of the electron patterning tool, and the SCALPEL™ electron patterning tool.

Abstract translation: 一种聚焦装置和方法，包括用于产生电子束通过的电子束，掩模和投影柱的源，以及电子束将被聚焦的晶片。 晶片位于投影柱的球面像差减小由投影柱中的色像差引起的负散焦效应的平面中。 该装置和方法适用于通常的电子图案形成工具，其中掩模的厚度小于电子图案形成工具的电子平均自由程的电子图案形成工具，以及SCALPEL TM电子图案形成工具。

公开(公告)号：US06333508B1

公开(公告)日：2001-12-25

申请号：US09580530

申请日：2000-05-30

Applicant: Victor Katsap ,  Pieter Kruit ,  Daniel Moonen ,  Warren K Waskiewicz

Inventor： Victor Katsap ,  Pieter Kruit ,  Daniel Moonen ,  Warren K Waskiewicz

IPC: H01J37302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J3/18 ,  H01J37/063 ,  H01J37/12 ,  H01J37/3174 ,  H01J2237/065 ,  H01J2237/12 ,  H01J2237/1205 ,  H01J2237/3175 ,  H01J2237/31774

Abstract: A method and apparatus for controlling beam emittance by placing a quadrupole lens array in a drift space of an illumination system component. The illumination system component may be an electron gun or a liner tube or drift tube, attachable to an electron gun. The quadrupole lens array may be three or more mesh grids or a combination of grids and continuous foils. The quadrupole lens array forms a multitude of microlenses resembling an optical “fly's eye” lens. The quadrupole lens array splits an incoming solid electron beam into a multitude of subbeams, such that the outgoing beam emittance is different from the incoming beam emittance, while beam total current remains unchanged. The method and apparatus permit independent control of beam current and beam emittance, which is beneficial in a SCALPEL illumination system.

Abstract translation: 一种通过将四极透镜阵列放置在照明系统部件的漂移空间中来控制光束发射的方法和装置。 照明系统部件可以是可附接到电子枪的电子枪或衬管或漂移管。 四极透镜阵列可以是三个或更多个网格或网格和连续箔片的组合。 四极透镜阵列形成大量类似于光学“飞眼”透镜的微透镜。 四极透镜阵列将输入的固体电子束分裂成多个子束，使得输出光束发射不同于入射光束发射，而光束总电流保持不变。 该方法和装置允许对束电流和光束发射的独立控制，这在SCALPEL照明系统中是有益的。

公开(公告)号：US5500312A

公开(公告)日：1996-03-19

申请号：US321362

申请日：1994-10-11

Applicant: Lloyd R. Harriott ,  James A. Liddle ,  Cynthia A. Volkert ,  Warren K. Waskiewicz ,  David L. Windt

Inventor： Lloyd R. Harriott ,  James A. Liddle ,  Cynthia A. Volkert ,  Warren K. Waskiewicz ,  David L. Windt

IPC: G03F1/00 ,  G03F1/22 ,  H01L21/027 ,  G03F9/00

CPC classification number: G03F1/22 ,  G03F1/20

Abstract: A process for controlling the stress of multilayer films formed on a substrate is disclosed. A plurality of periods, each period having at least two layers of material wherein one of the layers of material is under compressive stress and the other layer of material is under tensile stress, are formed in a substrate. The stress in the multilayer film is controlled by selecting a thickness for the layer under compressive stress and a thickness for the layer under tensile stress that will provide a multilayer film of the desired stress. The thickness of each layer is about 0.5 nm to about 10 nm. Multilayer films with a stress of about -50 MPa to about 50 MPa are obtained using the present process. The present invention is also directed to masks with such multilayer films.

Abstract translation: 公开了一种用于控制形成在基板上的多层膜的应力的方法。 在基板中形成多个周期，每个周期具有至少两层材料，其中材料层之一处于压应力下，另一层材料处于拉伸应力下。 通过选择压缩应力下的层的厚度和拉伸应力下的层的厚度来控制多层膜中的应力，这将提供所需应力的多层膜。 每层的厚度为约0.5nm至约10nm。 使用本方法获得约-50MPa至约50MPa的应力的多层膜。 本发明还涉及具有这种多层膜的掩模。

公开(公告)号：US07581203B2

公开(公告)日：2009-08-25

申请号：US10610002

申请日：2003-06-30

Applicant: Reginald C. Farrow ,  Warren K. Waskiewicz

Inventor： Reginald C. Farrow ,  Warren K. Waskiewicz

IPC: G06F17/50 ,  G06K9/00

CPC classification number: G03F1/50 ,  G03F1/00

Abstract: A method and apparatus are disclosed for fabricating a substrate having a plurality of circuit patterns. The substrate is exposed to a primary mask having a plurality of the desired circuit patterns, surrounded by one or more exclusion regions, and a secondary mask having a pattern corresponding to the exclusion regions that satisfies at least one design rule for a subsequent process. The primary and secondary masks are exposed on the substrate in any order before the resist patterns are developed. The pattern on the secondary mask may comprise, for example, an array of fill patterns. The pattern on the secondary mask may satisfy design rules for more than one process level so that a single secondary mask can be utilized for multiple process levels. In addition, the substrate only needs to be exposed to the secondary mask for process levels where the exclusion regions violate a design rule.

Abstract translation: 公开了用于制造具有多个电路图案的基板的方法和装置。 将衬底暴露于具有多个所需电路图案的主掩模，被一个或多个排除区域包围，以及具有对应于排除区域的图案的二次掩模，其满足后续处理的至少一个设计规则。 在抗蚀剂图案显影之前，主掩模和次掩模以任何顺序暴露在基板上。 辅助掩模上的图案可以包括例如填充图案的阵列。 辅助掩模上的图案可以满足多于一个处理级别的设计规则，从而可以对多个处理级别使用单个次要掩模。 另外，衬底仅需要暴露于二次掩模，以使排除区域违反设计规则的过程级别。

公开(公告)号：US06620565B2

公开(公告)日：2003-09-16

申请号：US10188030

申请日：2002-07-03

Applicant: Victor Katsap ,  Eric Munro ,  John Andrew Rouse ,  Warren K. Waskiewicz ,  Xieqing Zhu

Inventor： Victor Katsap ,  Eric Munro ,  John Andrew Rouse ,  Warren K. Waskiewicz ,  Xieqing Zhu

IPC: G03F900

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/1534 ,  Y10S430/143

Abstract: An apparatus and method of focusing including a source for producing an electron beam, a mask and a projection column, through which the electron beam passes, and a wafer on which the electron beam is to be focused. The wafer is located in a plane where spherical aberrations of the projection column reduce the negative defocusing effect caused by chromatic aberrations in the projection column. The apparatus and method are applicable to general electron patterning tools, electron patterning tools where a thickness of the mask is smaller than an electron mean free path of the electron patterning tool, and the SCALPEL™ electron patterning tool.

Abstract translation: 一种聚焦装置和方法，包括用于产生电子束通过的电子束，掩模和投影柱的源，以及电子束将被聚焦的晶片。 晶片位于投影柱的球面像差减小由投影柱中的色像差引起的负散焦效应的平面中。 该装置和方法适用于通常的电子图案形成工具，其中掩模的厚度小于电子图案形成工具的电子平均自由程的电子图案形成工具，以及SCALPEL TM电子图案形成工具。

公开(公告)号：US06448569B1

公开(公告)日：2002-09-10

申请号：US09337741

申请日：1999-06-22

Applicant: Victor Katsap ,  Warren K. Waskiewicz

Inventor： Victor Katsap ,  Warren K. Waskiewicz

IPC: G21G400

CPC classification number: H01J1/15 ,  H01J9/04 ,  H01J37/06 ,  H01J2237/3175

Abstract: A bonded article including a single crystal cathode, for use in projection electron beam lithography, such as the SCALPEL™ system. Because of its single crystalline structure, the single crystal cathode has only slightly misoriented grains. As a result, the single crystal cathode has few structural non-uniformities, and therefore a uniform emission characteristic. The single crystal cathode may be made of at least one of tantalum, tungsten, rhenium, and molybdenum. A local bonding technique for bonding a single crystal cathode with a conventional member. The local bonding technique does not recrystallize a center of the single crystal cathode, and therefore produces a bonded article which is usable in a projection electron lithography system, such as the SCALPEL™ system. The local bonding technique may be laser welding and the single crystal cathode may be made of at least one of tantalum, tungsten, rhenium, and molybdenum. The member may be a conventional filament and the filament may be made of one of tungsten, a tungsten-rhenium alloy, and a tungsten-tantalum alloy.

Abstract translation: 包括用于投影电子束光刻的单晶阴极的粘合制品，例如SCALPEL TM系统。 由于其单晶结构，单晶阴极仅具有微小的取向差的晶粒。 结果，单晶阴极具有很小的结构不均匀性，因此具有均匀的发射特性。 单晶阴极可以由钽，钨，铼和钼中的至少一种制成。 用于将单晶阴极与常规构件结合的局部粘结技术。 局部接合技术不会使单晶阴极的中心再结晶，因此产生可用于诸如SCALPEL TM系统的投影电子光刻系统中的接合制品。 局部粘合技术可以是激光焊接，并且单晶阴极可以由钽，钨，铼和钼中的至少一种制成。 构件可以是常规的灯丝，并且灯丝可以由钨，钨 - 铼合金和钨 - 钽合金之一制成。

公开(公告)号：US06324933B1

公开(公告)日：2001-12-04

申请号：US09413149

申请日：1999-10-06

Applicant: Warren K. Waskiewicz ,  Kurt S. Werder

Inventor： Warren K. Waskiewicz ,  Kurt S. Werder

IPC: B25J1700

CPC classification number: B23Q1/623 ,  B23Q1/38 ,  B23Q1/621 ,  B23Q5/28 ,  G01B5/004 ,  H01J2237/202 ,  H01J2237/3175 ,  Y10T74/20305

Abstract: Apparatus for moving a platform in X and Y directions including a first shaft secured along a first edge of the platform and oriented axially in the X direction and a second shaft secured along a second edge of the platform and oriented axially in the Y direction. First and second bearings support the first and second shafts, respectively, for axial movement. First and second linear drive shafts are oriented axially in the Y and X directions, respectively, with each drive shaft having a first end secured to a respective bearing. The drive shafts are arranged for independent axial movement in the Y and X directions and all of the shafts lie substantially in a single plane.

Abstract translation: 用于在X和Y方向上移动平台的装置，包括沿着平台的第一边缘固定并沿X方向轴向定向的第一轴和沿着平台的第二边缘固定并沿Y方向轴向定向的第二轴。 第一和第二轴承分别支撑第一和第二轴用于轴向运动。 第一和第二线性驱动轴分别在Y和X方向上轴向定向，每个驱动轴具有固定到相应轴承的第一端。 驱动轴被布置成在Y和X方向上独立的轴向运动，并且所有轴基本上在单个平面内。

公开(公告)号：US08859395B2

公开(公告)日：2014-10-14

申请号：US12627957

申请日：2009-11-30

Applicant: Roger A. Fratti ,  Warren K. Waskiewicz

Inventor： Roger A. Fratti ,  Warren K. Waskiewicz

IPC: H01L21/30 ,  H01L21/306 ,  H01L23/31 ,  H01L29/66

CPC classification number: H01L29/66234 ,  H01L21/30625 ,  H01L23/3171 ,  H01L29/66363 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/3511 ,  H01L2924/00

Abstract: Techniques for processing power transistor devices are provided. In one aspect, the curvature of a power transistor device comprising a device film formed on a substrate is controlled by thinning the substrate, the device having an overall residual stress attributable at least in part to the thinning step, and applying a stress compensation layer to a surface of the device film, the stress compensation layer having a tensile stress sufficient to counterbalance at least a portion of the overall residual stress of the device. The resultant power transistor device may be part of an integrated circuit.

Abstract translation: 提供了用于处理功率晶体管器件的技术。 在一个方面，包括形成在基板上的器件膜的功率晶体管器件的曲率通过使衬底变薄来控制，该器件具有至少部分归因于薄化步骤的总残余应力，并且将应力补偿层施加到 所述器件膜的表面，所述应力补偿层具有足以抵消所述器件的总残余应力的至少一部分的拉伸应力。 所得的功率晶体管器件可以是集成电路的一部分。

公开(公告)号：US07179148B2

公开(公告)日：2007-02-20

申请号：US10963156

申请日：2004-10-12

Applicant: Sungho Jin ,  Victor Katsap ,  Warren K. Waskiewicz ,  Wei Zhu

Inventor： Sungho Jin ,  Victor Katsap ,  Warren K. Waskiewicz ,  Wei Zhu

IPC: H01J9/04

CPC classification number: H01J1/15 ,  H01J9/042 ,  H01J37/06 ,  H01J2237/3175

Abstract: A cathode with an improved work function, for use in a lithographic system, such as the SCALPEL™ system, which includes a buffer between a substrate and an emissive layer, where the buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth. The buffer layer may be a solid solution or a multiphase alloy. A method of making the cathode by depositing a buffer between a surface of the substrate and an emissive layer, where the deposited buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth.

Abstract translation: 具有改进的功函数的阴极，用于诸如SCALPEL TM系统的光刻系统，其包括衬底和发射层之间的缓冲器，其中缓冲区改变，随机化，小型化和/或隔离 晶粒表面的晶粒结构减小晶粒尺寸，随机化晶体取向并降低晶体生长速率。 缓冲层可以是固溶体或多相合金。 通过在衬底的表面和发射层之间沉积缓冲剂来制造阴极的方法，其中沉积的缓冲液改变，随机化，小型化和/或隔离衬底表面处的晶粒结构以减小晶粒尺寸， 随机化晶体取向并降低晶体生长速率。

公开(公告)号：US06815876B1

公开(公告)日：2004-11-09

申请号：US09338520

申请日：1999-06-23

Applicant: Sungho Jin ,  Victor Katsap ,  Warren K. Waskiewicz ,  Wei Zhu

Inventor： Sungho Jin ,  Victor Katsap ,  Warren K. Waskiewicz ,  Wei Zhu

IPC: H01J120

CPC classification number: H01J1/15 ,  H01J9/042 ,  H01J37/06 ,  H01J2237/3175

Abstract: A cathode with an improved work function, for use in a lithographic system, such as the SCALPEL™ system, which includes a buffer between a substrate and an emissive layer, where the buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth. The buffer layer may be a solid solution or a multiphase alloy. A method of making the cathode by depositing a buffer between a surface of the substrate and an emissive layer, where the deposited buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth.