公开(公告)号：US5701327A

公开(公告)日：1997-12-23

申请号：US640377

申请日：1996-04-30

申请人： John Edward Cunningham ,  William Young Jan ,  Wayne Harvey Knox ,  Sergio Tsuda

发明人： John Edward Cunningham ,  William Young Jan ,  Wayne Harvey Knox ,  Sergio Tsuda

IPC分类号： H01S3/02 ,  G02F1/35 ,  H01S3/06 ,  H01S3/086 ,  H01S3/098 ,  H01S3/11 ,  H01S3/08 ,  G02F1/03 ,  H01L21/20 ,  H01L29/06

CPC分类号： H01S3/1118 ,  G02F1/3523

摘要： Low optical loss and simplified fabrication are achieved by a nonlinear reflector which incorporates one or more semiconductor quantum wells within an n half-wavelengths strain relief layer (where n is an odd integer greater than zero) that is formed on a standard semiconductor quarter wave stack reflector. Growth of the half-wavelength layer is controlled so that dislocations are formed in sufficient concentration at the interface region to act effectively as non-radiative recombination sources. After saturation, these recombination sources remove carriers in the quantum well before the next round trip of the optical pulse arrives in the laser cavity. The nonlinear reflector is suitable for laser modelocking at the high wavelengths associated with many currently contemplated telecommunications applications and provides, at such wavelengths, an intensity dependent response that permits it to be used for saturable absorption directly in a main oscillating cavity of a laser. Saturation intensity of the nonlinear reflector and thereby related laser modelocking properties can be controlled by disposing the quantum well(s) at a particular position within the strain relief layer.

摘要翻译： 低光损耗和简化制造通过非线性反射器实现，该非线性反射器在n个半波长应变消除层（其中n是大于零的奇整数）中包含一个或多个半导体量子阱，其形成在标准半导体四分之一波长叠层 反射器。 控制半波长层的生长，使得在界面区域以足够的浓度形成位错以有效地作为非辐射复合源起作用。 在饱和之后，这些重组源在光脉冲的下一次往返到达激光腔之前去除量子阱中的载流子。 非线性反射器适用于与许多当前预期的电信应用相关联的高波长处的激光锁模，并且在这样的波长处提供强度依赖性响应，其允许其直接用于激光器的主振荡腔中的可饱和吸收。 可以通过将量子阱设置在应变消除层内的特定位置来控制非线性反射器的饱和强度，从而相关的激光锁模特性。

公开(公告)号：US5872016A

公开(公告)日：1999-02-16

申请号：US665618

申请日：1996-06-18

申请人： John Edward Cunningham ,  Keith Wayne Goossen ,  William Young Jan ,  Michael D. Williams

发明人： John Edward Cunningham ,  Keith Wayne Goossen ,  William Young Jan ,  Michael D. Williams

IPC分类号： H01L31/0352 ,  H01L31/105 ,  H01L33/00 ,  H01L33/02 ,  H01L33/06 ,  H01S5/30 ,  H01S5/34 ,  H01L21/20

CPC分类号： H01L33/025 ,  B82Y20/00 ,  H01L31/0352 ,  H01L31/105 ,  H01L33/0012 ,  H01L33/06 ,  H01S5/34 ,  H01S2304/00 ,  H01S5/305

摘要： Optoelectronic devices such as photodetectors, modulators and lasers with improved optical properties are provided with an atomically smooth transition between the buried conductive layer and quantum-well-diode-containing intrinsic region of a p-i-n structure. The buried conductive layer is grown on an underlying substrate utilizing a surfactant-assisted growth technique. The dopant and dopant concentration are selected, as a function of the thickness of the conductive layer to be formed, so that a surface impurity concentration of from 0.1 to 1 monolayer of dopant atoms is provided. The presence of the impurities promotes atomic ordering at the interface between the conductive layer and the intrinsic region, and subsequently results in sharp barriers between the alternating layers comprising the quantum-well-diodes of the intrinsic layer.

摘要翻译： 具有改进的光学性质的诸如光电探测器，调制器和激光器的光电器件在掩埋导电层和含p-i-n结构的量子阱二极管的本征区域之间具有原子平滑的过渡。 使用表面活性剂辅助生长技术将掩埋的导电层生长在下面的衬底上。 选择掺杂剂和掺杂剂浓度作为要形成的导电层的厚度的函数，使得提供0.1至1个单层掺杂剂原子的表面杂质浓度。 杂质的存在促进在导电层和本征区之间的界面处的原子排序，并且随后在包含本征层的量子阱二极管的交替层之间产生尖锐的障碍。