公开(公告)号：US5872016A

公开(公告)日：1999-02-16

申请号：US665618

申请日：1996-06-18

申请人： John Edward Cunningham ,  Keith Wayne Goossen ,  William Young Jan ,  Michael D. Williams

发明人： John Edward Cunningham ,  Keith Wayne Goossen ,  William Young Jan ,  Michael D. Williams

IPC分类号： H01L31/0352 ,  H01L31/105 ,  H01L33/00 ,  H01L33/02 ,  H01L33/06 ,  H01S5/30 ,  H01S5/34 ,  H01L21/20

CPC分类号： H01L33/025 ,  B82Y20/00 ,  H01L31/0352 ,  H01L31/105 ,  H01L33/0012 ,  H01L33/06 ,  H01S5/34 ,  H01S2304/00 ,  H01S5/305

摘要： Optoelectronic devices such as photodetectors, modulators and lasers with improved optical properties are provided with an atomically smooth transition between the buried conductive layer and quantum-well-diode-containing intrinsic region of a p-i-n structure. The buried conductive layer is grown on an underlying substrate utilizing a surfactant-assisted growth technique. The dopant and dopant concentration are selected, as a function of the thickness of the conductive layer to be formed, so that a surface impurity concentration of from 0.1 to 1 monolayer of dopant atoms is provided. The presence of the impurities promotes atomic ordering at the interface between the conductive layer and the intrinsic region, and subsequently results in sharp barriers between the alternating layers comprising the quantum-well-diodes of the intrinsic layer.

摘要翻译： 具有改进的光学性质的诸如光电探测器，调制器和激光器的光电器件在掩埋导电层和含p-i-n结构的量子阱二极管的本征区域之间具有原子平滑的过渡。 使用表面活性剂辅助生长技术将掩埋的导电层生长在下面的衬底上。 选择掺杂剂和掺杂剂浓度作为要形成的导电层的厚度的函数，使得提供0.1至1个单层掺杂剂原子的表面杂质浓度。 杂质的存在促进在导电层和本征区之间的界面处的原子排序，并且随后在包含本征层的量子阱二极管的交替层之间产生尖锐的障碍。

公开(公告)号：US06485996B2

公开(公告)日：2002-11-26

申请号：US09769024

申请日：2001-01-25

申请人： Leo Maria Chirovsky ,  John Edward Cunningham ,  Keith Wayne Goossen ,  Sanghee Park Hui ,  Betty Jyue Tseng

发明人： Leo Maria Chirovsky ,  John Edward Cunningham ,  Keith Wayne Goossen ,  Sanghee Park Hui ,  Betty Jyue Tseng

IPC分类号： H01L2715

CPC分类号： H01S5/18305 ,  H01L27/156 ,  H01S5/0201 ,  H01S5/0224 ,  H01S5/0422 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18361 ,  H01S5/18372 ,  H01S5/18375 ,  H01S5/18377

摘要： A technique is described for determining the performance of substrate-side emitting VCSELs formed on a wafer. The technique involves forming top-emitting VCSELs on the same wafer as bottom-emitting VCSELs and then testing the top-emitting VCSELs and using the results to determine the performance of the bottom-emitting VCSELs of the wafer.

摘要翻译： 描述了一种用于确定在晶片上形成的衬底侧发射VCSEL的性能的技术。 该技术涉及在与底部发射VCSEL相同的晶片上形成顶部发射VCSEL，然后测试顶部发射VCSEL并使用结果来确定晶片的底部发射VCSEL的性能。

公开(公告)号：US5940723A

公开(公告)日：1999-08-17

申请号：US17376

申请日：1998-02-03

申请人： John Edward Cunningham ,  Keith Wayne Goossen

发明人： John Edward Cunningham ,  Keith Wayne Goossen

IPC分类号： C30B23/02 ,  H01L21/20 ,  H01L21/205

CPC分类号： C30B23/02 ,  C30B29/40 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02631

摘要： The specification describes a process for growing device quality III-V heteroepitaxial layers without the use of buffer layers, i.e. largely defect free layers with thicknesses greater than 50 Angstroms directly on the III-V substrate. These high quality heteroepitaxial layers are grown by low temperature MBE.

摘要翻译： 本说明书描述了不使用缓冲层生长器件质量III-V异质外延层的方法，即III-V衬底上直接厚度大于50埃的大部分无缺陷层。 这些高质量异质外延层通过低温MBE生长。

公开(公告)号：US06258616B1

公开(公告)日：2001-07-10

申请号：US09083165

申请日：1998-05-22

申请人： John Edward Cunningham ,  Keith Wayne Goossen

发明人： John Edward Cunningham ,  Keith Wayne Goossen

IPC分类号： H01L2100

CPC分类号： H01L29/452 ,  H01L29/365 ,  H01L33/40 ,  H01S5/0421 ,  H01S5/0425

摘要： A semiconductor device having a buried doped layer of semiconductor material and a non-alloyed contact to the buried doped layer. The non-alloyed contact is made ohmic by the presence of an underlying delta-doped monolayer. The semiconductor device is made by placing a stop-etch layer on top of a buried doped layer and forming at least one delta-doped monolayer in either the stop-etch layer or the buried doped layer. Layers of semiconductor material disposed above the stop-etch layer are removed with an etchant to define an active region of the semiconductor device. The stop-etch layer prevents the etchant from removing the delta-doped monolayer. A non-alloyed metal film is then deposited over the delta-doped monolayer to form an ohmic contact to the buried doped layer.

摘要翻译： 一种具有半导体材料的掩埋掺杂层和与该掩埋掺杂层的非合金接触的半导体器件。 通过存在下面的δ-掺杂的单层，非合金化接触是欧姆的。 通过在掩埋掺杂层的顶部放置止蚀蚀刻层并在停止蚀刻层或掩埋掺杂层中形成至少一个δ-掺杂单层来制造半导体器件。 用蚀刻剂去除设置在停止蚀刻层上方的半导体材料层，以限定半导体器件的有源区。 停止蚀刻层防止蚀刻剂去除δ-掺杂的单层。 然后将非合金金属膜沉积在δ掺杂单层上以形成与埋入掺杂层的欧姆接触。

公开(公告)号：US5996221A

公开(公告)日：1999-12-07

申请号：US766215

申请日：1996-12-12

申请人： Leo Maria Freishyn Chirovsky ,  John Edward Cunningham ,  Lucian Arthur D'Asaro ,  Keith Wayne Goossen

发明人： Leo Maria Freishyn Chirovsky ,  John Edward Cunningham ,  Lucian Arthur D'Asaro ,  Keith Wayne Goossen

IPC分类号： H01L21/60 ,  G02B6/42 ,  H01L21/603 ,  H01L21/607 ,  H01L25/16 ,  H01L33/00 ,  H05K3/32

CPC分类号： G02B6/4236 ,  H01L24/81 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/1204 ,  H01L2924/14 ,  H01L2924/30105 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/53178

摘要： A method for thermocompression bonding structures together including structures having different coefficients of thermal expansion, for example, thermocompression bonding optical diode arrays or other semiconductor structures to silicon substrates to form electronic or optoelectronic devices. The method includes aligning and contacting the structures to be interconnected, thermocompressing the structures via their contact pad elements at a bonding temperature, establishing an encapsulation temperature, applying an encapsulant material between the bonded structures, and curing the encapsulant material at the encapsulation temperature. Conventional bonding processes, which treat encapsulation as a separate step apart from bonding processes, melt the bonded assembly together and include at least one thermal cycle in which the bonded assembly is cooled to room temperature and then is re-heated to the encapsulation temperature before applying the encapsulant material. The inventive method eliminates this thermal cycle by including encapsulation as an integral step in the thermocompression bonding process and therefore reduces or eliminates the possibility of damage to bonds or their multi-layered contact elements between the time of bonding and the time of encapsulation. Resultingly, the inventive method advantageously improves the quality and reliability of the resulting bonds within the formed device compared to bonds formed in a conventional manner.

摘要翻译： 一起将热膨胀系数不同的结构例如热压接光二极管阵列或其他半导体结构热压接合结构的方法，以形成电子或光电器件。 该方法包括对准和接触要互连的结构，在接合温度下通过其接触垫元件热压结构，建立封装温度，在结合的结构之间施加密封剂材料，以及在封装温度下固化密封剂材料。 常规的粘合方法将封装作为离开粘结工艺的独立步骤进行处理，将结合的组件熔化在一起并且包括至少一个热循环，其中粘合组件被冷却至室温，然后在施加之前再加热至包封温度 密封材料。 本发明的方法通过将封装作为热压接合工艺中的一个整体步骤来消除该热循环，并因此降低或消除了在键合时间和封装时间之间对键或其多层接触元件的损坏的可能性。 因此，与以常规方式形成的键相比，本发明的方法有利地提高了所形成的装置内所得结合物的质量和可靠性。

公开(公告)号：US06222206B1

公开(公告)日：2001-04-24

申请号：US09105573

申请日：1998-06-25

申请人： Leo Maria Chirovsky ,  John Edward Cunningham ,  Keith Wayne Goossen ,  Sanghee Park Hui ,  Betty Jyue Tseng

发明人： Leo Maria Chirovsky ,  John Edward Cunningham ,  Keith Wayne Goossen ,  Sanghee Park Hui ,  Betty Jyue Tseng

IPC分类号： H01L3300

CPC分类号： H01S5/18305 ,  H01L27/156 ,  H01S5/0201 ,  H01S5/0224 ,  H01S5/0422 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18361 ,  H01S5/18372 ,  H01S5/18375 ,  H01S5/18377

摘要： A technique is described for determining the performance of substrate-side emitting VCSELs formed on a wafer. The technique involves forming top-emitting VCSELs on the same wafer as bottom-emitting VCSELs and then testing the top-emitting VCSELs and using the results to determine the performance of the bottom-emitting VCSELs of the wafer.

摘要翻译： 描述了一种用于确定在晶片上形成的衬底侧发射VCSEL的性能的技术。 该技术涉及在与底部发射VCSEL相同的晶片上形成顶部发射VCSEL，然后测试顶部发射VCSEL并使用结果来确定晶片的底部发射VCSEL的性能。

公开(公告)号：US5735950A

公开(公告)日：1998-04-07

申请号：US653086

申请日：1996-05-24

申请人： John Edward Cunningham ,  Keith Wayne Goossen

发明人： John Edward Cunningham ,  Keith Wayne Goossen

IPC分类号： C30B23/08 ,  C30B29/40 ,  H01L21/20 ,  H01L21/203 ,  H01L31/18 ,  C30B25/16

CPC分类号： H01L31/184 ,  Y02E10/544

摘要： A process for manufacturing precise alloy compositions in nonlinear alloy systems. The invention implements a new quadratic fitting function that relates alloy composition c.sub.A for a variable A to input fluxes f.sub.A and f.sub.B, as c.sub.A =f.sub.A.sup.2 /(f.sub.A.sup.2 +/.beta.f.sub.B.sup.2). .beta. is a parameter that is used to modify the incorporation of the Group V input variable B. This modification is necessary because of different surface populations of Group V dimer species. This new fitting function precisely predicts alloy compositions in nonlinear systems, such as the GaAs.sub.l-y P.sub.y system, where y is set equal to the composition c.sub.A.

摘要翻译： 一种在非线性合金系统中制造精密合金组成的方法。 本发明实现了一种新的二次拟合函数，其将变量A的合金组成cA与输入通量fA和fB相关联，如cA = fA2 /（fA2 + /βfB2）。 β是用于修改V组输入变量B的并入的参数。由于V族二聚体物种的不同表面积，这种修饰是必需的。 这种新的拟合函数精确地预测非线性系统中的合金组成，例如GaAs1-yPy系统，其中y被设定为等于组成cA。

公开(公告)号：US5701327A

公开(公告)日：1997-12-23

申请号：US640377

申请日：1996-04-30

申请人： John Edward Cunningham ,  William Young Jan ,  Wayne Harvey Knox ,  Sergio Tsuda

发明人： John Edward Cunningham ,  William Young Jan ,  Wayne Harvey Knox ,  Sergio Tsuda

IPC分类号： H01S3/02 ,  G02F1/35 ,  H01S3/06 ,  H01S3/086 ,  H01S3/098 ,  H01S3/11 ,  H01S3/08 ,  G02F1/03 ,  H01L21/20 ,  H01L29/06

CPC分类号： H01S3/1118 ,  G02F1/3523

摘要： Low optical loss and simplified fabrication are achieved by a nonlinear reflector which incorporates one or more semiconductor quantum wells within an n half-wavelengths strain relief layer (where n is an odd integer greater than zero) that is formed on a standard semiconductor quarter wave stack reflector. Growth of the half-wavelength layer is controlled so that dislocations are formed in sufficient concentration at the interface region to act effectively as non-radiative recombination sources. After saturation, these recombination sources remove carriers in the quantum well before the next round trip of the optical pulse arrives in the laser cavity. The nonlinear reflector is suitable for laser modelocking at the high wavelengths associated with many currently contemplated telecommunications applications and provides, at such wavelengths, an intensity dependent response that permits it to be used for saturable absorption directly in a main oscillating cavity of a laser. Saturation intensity of the nonlinear reflector and thereby related laser modelocking properties can be controlled by disposing the quantum well(s) at a particular position within the strain relief layer.

摘要翻译： 低光损耗和简化制造通过非线性反射器实现，该非线性反射器在n个半波长应变消除层（其中n是大于零的奇整数）中包含一个或多个半导体量子阱，其形成在标准半导体四分之一波长叠层 反射器。 控制半波长层的生长，使得在界面区域以足够的浓度形成位错以有效地作为非辐射复合源起作用。 在饱和之后，这些重组源在光脉冲的下一次往返到达激光腔之前去除量子阱中的载流子。 非线性反射器适用于与许多当前预期的电信应用相关联的高波长处的激光锁模，并且在这样的波长处提供强度依赖性响应，其允许其直接用于激光器的主振荡腔中的可饱和吸收。 可以通过将量子阱设置在应变消除层内的特定位置来控制非线性反射器的饱和强度，从而相关的激光锁模特性。

公开(公告)号：US6141359A

公开(公告)日：2000-10-31

申请号：US16622

申请日：1998-01-30

申请人： John Edward Cunningham ,  Wayne Harvey Knox

发明人： John Edward Cunningham ,  Wayne Harvey Knox

IPC分类号： G02F1/35 ,  G02F1/355 ,  H01S3/098 ,  H01S3/113

CPC分类号： H01S3/1118 ,  B82Y20/00 ,  G02F1/3523 ,  G02F1/3556 ,  G02F2201/346

摘要： The present invention is an improved modelocked laser comprising an optical gain medium and an optical cavity including a self-tuning saturable reflector incorporating one or more quantum wells. In the improved laser, the self-tuning saturable reflector comprises a first Bragg grating having a reflection spectrum broader than the spectrum of desired lasing and an additional Bragg reflector for light in the spectral region of lasing to provide self-starting and stable operation without mechanical tuning. The Bragg reflectors are preferably semiconductor quarter wave reflector stacks, and the saturable absorber is one or more quantum wells within the outer stack. The invention also encompasses the new saturable reflector used in such lasers.

摘要翻译： 本发明是一种改进的锁模激光器，其包括光学增益介质和包括具有一个或多个量子阱的自调谐可饱和反射器的光学腔。 在改进的激光器中，自调谐可饱和反射器包括具有比期望的激光的光谱更宽的反射光谱的第一布拉格光栅和用于激光的光谱区域中的光的附加布拉格反射器，以提供自启动和稳定的操作，而不需要机械 调整 布拉格反射器优选地是半导体四分之一波长反射器叠层，并且可饱和吸收体是外部堆叠内的一个或多个量子阱。 本发明还包括在这种激光器中使用的新的可饱和反射器。

公开(公告)号：US5834792A

公开(公告)日：1998-11-10

申请号：US111765

申请日：1993-08-25

申请人： John Edward Cunningham ,  Won-Tien Tsang

发明人： John Edward Cunningham ,  Won-Tien Tsang

IPC分类号： H01L29/12 ,  H01L29/15 ,  H01L29/36 ,  H01L29/66 ,  H01L33/28 ,  H01L33/30

CPC分类号： H01L33/285 ,  H01L29/157 ,  H01L29/365 ,  H01L33/305

摘要： The disclosed novel doping method makes it possible to tailor the effective activation energy of a dopant species in semiconductor material. The method involves formation of very thin layers of .delta.-doped second semiconductor material in first semiconductor material, with the second material chosen to have a bandgap energy that differs from that of the first material. Exemplarily, in a Be-doped GaAs/AlGaAs structure according to the invention the effective activation energy of the dopant was measured to be about 4 meV, and in conventionally Be-doped GaAs it was measured to be about 19 meV. The invention can be advantageously used to dope III-V and II-VI semiconductors. In some cases it may make possible effective doping of a semiconductor for which prior art techniques are not satisfactory.

摘要翻译： 所公开的新型掺杂方法使得可以调整半导体材料中掺杂剂物质的有效活化能。 该方法包括在第一半导体材料中形成非常薄的δ-掺杂的第二半导体材料层，其中第二材料被选择为具有不同于第一材料的带隙能量。 示例性地，在根据本发明的Be掺杂GaAs / AlGaAs结构中，测量掺杂剂的有效活化能为约4meV，并且在常规的Be掺杂GaAs中，测量其为约19meV。 本发明可有利地用于掺杂III-V和II-VI半导体。 在某些情况下，可能有效地掺杂现有技术不令人满意的半导体。