公开(公告)号：US5872016A

公开(公告)日：1999-02-16

申请号：US665618

申请日：1996-06-18

申请人： John Edward Cunningham ,  Keith Wayne Goossen ,  William Young Jan ,  Michael D. Williams

发明人： John Edward Cunningham ,  Keith Wayne Goossen ,  William Young Jan ,  Michael D. Williams

IPC分类号： H01L31/0352 ,  H01L31/105 ,  H01L33/00 ,  H01L33/02 ,  H01L33/06 ,  H01S5/30 ,  H01S5/34 ,  H01L21/20

CPC分类号： H01L33/025 ,  B82Y20/00 ,  H01L31/0352 ,  H01L31/105 ,  H01L33/0012 ,  H01L33/06 ,  H01S5/34 ,  H01S2304/00 ,  H01S5/305

摘要： Optoelectronic devices such as photodetectors, modulators and lasers with improved optical properties are provided with an atomically smooth transition between the buried conductive layer and quantum-well-diode-containing intrinsic region of a p-i-n structure. The buried conductive layer is grown on an underlying substrate utilizing a surfactant-assisted growth technique. The dopant and dopant concentration are selected, as a function of the thickness of the conductive layer to be formed, so that a surface impurity concentration of from 0.1 to 1 monolayer of dopant atoms is provided. The presence of the impurities promotes atomic ordering at the interface between the conductive layer and the intrinsic region, and subsequently results in sharp barriers between the alternating layers comprising the quantum-well-diodes of the intrinsic layer.

摘要翻译： 具有改进的光学性质的诸如光电探测器，调制器和激光器的光电器件在掩埋导电层和含p-i-n结构的量子阱二极管的本征区域之间具有原子平滑的过渡。 使用表面活性剂辅助生长技术将掩埋的导电层生长在下面的衬底上。 选择掺杂剂和掺杂剂浓度作为要形成的导电层的厚度的函数，使得提供0.1至1个单层掺杂剂原子的表面杂质浓度。 杂质的存在促进在导电层和本征区之间的界面处的原子排序，并且随后在包含本征层的量子阱二极管的交替层之间产生尖锐的障碍。

公开(公告)号：US5940723A

公开(公告)日：1999-08-17

申请号：US17376

申请日：1998-02-03

申请人： John Edward Cunningham ,  Keith Wayne Goossen

发明人： John Edward Cunningham ,  Keith Wayne Goossen

IPC分类号： C30B23/02 ,  H01L21/20 ,  H01L21/205

CPC分类号： C30B23/02 ,  C30B29/40 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02631

摘要： The specification describes a process for growing device quality III-V heteroepitaxial layers without the use of buffer layers, i.e. largely defect free layers with thicknesses greater than 50 Angstroms directly on the III-V substrate. These high quality heteroepitaxial layers are grown by low temperature MBE.

摘要翻译： 本说明书描述了不使用缓冲层生长器件质量III-V异质外延层的方法，即III-V衬底上直接厚度大于50埃的大部分无缺陷层。 这些高质量异质外延层通过低温MBE生长。

公开(公告)号：US06485996B2

公开(公告)日：2002-11-26

申请号：US09769024

申请日：2001-01-25

申请人： Leo Maria Chirovsky ,  John Edward Cunningham ,  Keith Wayne Goossen ,  Sanghee Park Hui ,  Betty Jyue Tseng

发明人： Leo Maria Chirovsky ,  John Edward Cunningham ,  Keith Wayne Goossen ,  Sanghee Park Hui ,  Betty Jyue Tseng

IPC分类号： H01L2715

CPC分类号： H01S5/18305 ,  H01L27/156 ,  H01S5/0201 ,  H01S5/0224 ,  H01S5/0422 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18361 ,  H01S5/18372 ,  H01S5/18375 ,  H01S5/18377

摘要： A technique is described for determining the performance of substrate-side emitting VCSELs formed on a wafer. The technique involves forming top-emitting VCSELs on the same wafer as bottom-emitting VCSELs and then testing the top-emitting VCSELs and using the results to determine the performance of the bottom-emitting VCSELs of the wafer.

摘要翻译： 描述了一种用于确定在晶片上形成的衬底侧发射VCSEL的性能的技术。 该技术涉及在与底部发射VCSEL相同的晶片上形成顶部发射VCSEL，然后测试顶部发射VCSEL并使用结果来确定晶片的底部发射VCSEL的性能。

公开(公告)号：US06222206B1

公开(公告)日：2001-04-24

申请号：US09105573

申请日：1998-06-25

申请人： Leo Maria Chirovsky ,  John Edward Cunningham ,  Keith Wayne Goossen ,  Sanghee Park Hui ,  Betty Jyue Tseng

发明人： Leo Maria Chirovsky ,  John Edward Cunningham ,  Keith Wayne Goossen ,  Sanghee Park Hui ,  Betty Jyue Tseng

IPC分类号： H01L3300

CPC分类号： H01S5/18305 ,  H01L27/156 ,  H01S5/0201 ,  H01S5/0224 ,  H01S5/0422 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18361 ,  H01S5/18372 ,  H01S5/18375 ,  H01S5/18377

摘要： A technique is described for determining the performance of substrate-side emitting VCSELs formed on a wafer. The technique involves forming top-emitting VCSELs on the same wafer as bottom-emitting VCSELs and then testing the top-emitting VCSELs and using the results to determine the performance of the bottom-emitting VCSELs of the wafer.

摘要翻译： 描述了一种用于确定在晶片上形成的衬底侧发射VCSEL的性能的技术。 该技术涉及在与底部发射VCSEL相同的晶片上形成顶部发射VCSEL，然后测试顶部发射VCSEL并使用结果来确定晶片的底部发射VCSEL的性能。

公开(公告)号：US5735950A

公开(公告)日：1998-04-07

申请号：US653086

申请日：1996-05-24

申请人： John Edward Cunningham ,  Keith Wayne Goossen

发明人： John Edward Cunningham ,  Keith Wayne Goossen

IPC分类号： C30B23/08 ,  C30B29/40 ,  H01L21/20 ,  H01L21/203 ,  H01L31/18 ,  C30B25/16

CPC分类号： H01L31/184 ,  Y02E10/544

摘要： A process for manufacturing precise alloy compositions in nonlinear alloy systems. The invention implements a new quadratic fitting function that relates alloy composition c.sub.A for a variable A to input fluxes f.sub.A and f.sub.B, as c.sub.A =f.sub.A.sup.2 /(f.sub.A.sup.2 +/.beta.f.sub.B.sup.2). .beta. is a parameter that is used to modify the incorporation of the Group V input variable B. This modification is necessary because of different surface populations of Group V dimer species. This new fitting function precisely predicts alloy compositions in nonlinear systems, such as the GaAs.sub.l-y P.sub.y system, where y is set equal to the composition c.sub.A.

摘要翻译： 一种在非线性合金系统中制造精密合金组成的方法。 本发明实现了一种新的二次拟合函数，其将变量A的合金组成cA与输入通量fA和fB相关联，如cA = fA2 /（fA2 + /βfB2）。 β是用于修改V组输入变量B的并入的参数。由于V族二聚体物种的不同表面积，这种修饰是必需的。 这种新的拟合函数精确地预测非线性系统中的合金组成，例如GaAs1-yPy系统，其中y被设定为等于组成cA。

公开(公告)号：US06258616B1

公开(公告)日：2001-07-10

申请号：US09083165

申请日：1998-05-22

申请人： John Edward Cunningham ,  Keith Wayne Goossen

发明人： John Edward Cunningham ,  Keith Wayne Goossen

IPC分类号： H01L2100

CPC分类号： H01L29/452 ,  H01L29/365 ,  H01L33/40 ,  H01S5/0421 ,  H01S5/0425

摘要： A semiconductor device having a buried doped layer of semiconductor material and a non-alloyed contact to the buried doped layer. The non-alloyed contact is made ohmic by the presence of an underlying delta-doped monolayer. The semiconductor device is made by placing a stop-etch layer on top of a buried doped layer and forming at least one delta-doped monolayer in either the stop-etch layer or the buried doped layer. Layers of semiconductor material disposed above the stop-etch layer are removed with an etchant to define an active region of the semiconductor device. The stop-etch layer prevents the etchant from removing the delta-doped monolayer. A non-alloyed metal film is then deposited over the delta-doped monolayer to form an ohmic contact to the buried doped layer.

摘要翻译： 一种具有半导体材料的掩埋掺杂层和与该掩埋掺杂层的非合金接触的半导体器件。 通过存在下面的δ-掺杂的单层，非合金化接触是欧姆的。 通过在掩埋掺杂层的顶部放置止蚀蚀刻层并在停止蚀刻层或掩埋掺杂层中形成至少一个δ-掺杂单层来制造半导体器件。 用蚀刻剂去除设置在停止蚀刻层上方的半导体材料层，以限定半导体器件的有源区。 停止蚀刻层防止蚀刻剂去除δ-掺杂的单层。 然后将非合金金属膜沉积在δ掺杂单层上以形成与埋入掺杂层的欧姆接触。

公开(公告)号：US5996221A

公开(公告)日：1999-12-07

申请号：US766215

申请日：1996-12-12

申请人： Leo Maria Freishyn Chirovsky ,  John Edward Cunningham ,  Lucian Arthur D'Asaro ,  Keith Wayne Goossen

发明人： Leo Maria Freishyn Chirovsky ,  John Edward Cunningham ,  Lucian Arthur D'Asaro ,  Keith Wayne Goossen

IPC分类号： H01L21/60 ,  G02B6/42 ,  H01L21/603 ,  H01L21/607 ,  H01L25/16 ,  H01L33/00 ,  H05K3/32

CPC分类号： G02B6/4236 ,  H01L24/81 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/1204 ,  H01L2924/14 ,  H01L2924/30105 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/53178

摘要： A method for thermocompression bonding structures together including structures having different coefficients of thermal expansion, for example, thermocompression bonding optical diode arrays or other semiconductor structures to silicon substrates to form electronic or optoelectronic devices. The method includes aligning and contacting the structures to be interconnected, thermocompressing the structures via their contact pad elements at a bonding temperature, establishing an encapsulation temperature, applying an encapsulant material between the bonded structures, and curing the encapsulant material at the encapsulation temperature. Conventional bonding processes, which treat encapsulation as a separate step apart from bonding processes, melt the bonded assembly together and include at least one thermal cycle in which the bonded assembly is cooled to room temperature and then is re-heated to the encapsulation temperature before applying the encapsulant material. The inventive method eliminates this thermal cycle by including encapsulation as an integral step in the thermocompression bonding process and therefore reduces or eliminates the possibility of damage to bonds or their multi-layered contact elements between the time of bonding and the time of encapsulation. Resultingly, the inventive method advantageously improves the quality and reliability of the resulting bonds within the formed device compared to bonds formed in a conventional manner.

摘要翻译： 一起将热膨胀系数不同的结构例如热压接光二极管阵列或其他半导体结构热压接合结构的方法，以形成电子或光电器件。 该方法包括对准和接触要互连的结构，在接合温度下通过其接触垫元件热压结构，建立封装温度，在结合的结构之间施加密封剂材料，以及在封装温度下固化密封剂材料。 常规的粘合方法将封装作为离开粘结工艺的独立步骤进行处理，将结合的组件熔化在一起并且包括至少一个热循环，其中粘合组件被冷却至室温，然后在施加之前再加热至包封温度 密封材料。 本发明的方法通过将封装作为热压接合工艺中的一个整体步骤来消除该热循环，并因此降低或消除了在键合时间和封装时间之间对键或其多层接触元件的损坏的可能性。 因此，与以常规方式形成的键相比，本发明的方法有利地提高了所形成的装置内所得结合物的质量和可靠性。

公开(公告)号：US06704513B1

公开(公告)日：2004-03-09

申请号：US09677102

申请日：2000-09-29

申请人： Keith Wayne Goossen

发明人： Keith Wayne Goossen

IPC分类号： H04J1402

CPC分类号： G02B26/02 ,  G02B26/001 ,  H04J14/0221

摘要： An electro-optic device for use in wavelength division multiplexed systems. The device comprises a layer structure having two adjustable air gaps. Optical response of the device can be changed by adjusting spacings of the air gaps. The device can be used as an optical power equalizer in wavelength division multiplexed systems.

摘要翻译： 一种用于波分复用系统的电光装置。 该装置包括具有两个可调气隙的层结构。 可以通过调整气隙的间距来改变装置的光学响应。 该装置可以用作波分复用系统中的光功率均衡器。

公开(公告)号：US06444491B1

公开(公告)日：2002-09-03

申请号：US09547122

申请日：2000-04-11

申请人： Lucian Arthur D'Asaro ,  Keith Wayne Goossen ,  Sanghee Park Hui ,  Betty J. Tseng ,  James Albert Walker

发明人： Lucian Arthur D'Asaro ,  Keith Wayne Goossen ,  Sanghee Park Hui ,  Betty J. Tseng ,  James Albert Walker

IPC分类号： H01L2144

CPC分类号： H01L25/167 ,  H01L31/125 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/00 ,  H01L2224/0401

摘要： An integrated semiconductor device is formed from two fabricated semiconductor devices each having a substrate by placing an etch-resist on the substrate of the one semiconductor device, by bonding the conductors of one of the fabricated semiconductor devices to the conductors of the other fabricated semiconductor device, flowing an uncured cement (e.g. epoxy) between the etch-resist and the other substrate, allowing the cement to solidify, and removing the substrate from the one of the semiconductor devices. More specifically, a hybrid semiconductor device is formed from a GaAs/AlGaAs multiple quantum well modulator having a substrate and an IC chip having a substrate by placing an etch resist on the modulator substrate, bonding the conductors of the modulator to the conductors of the chip, wicking an uncured epoxy between the modulators and the chip, allowing the epoxy to cure, and removing the substrate from the modulator.

摘要翻译： 由两个制造的半导体器件形成集成半导体器件，每个半导体器件通过将所制造的半导体器件中的一个的导体连接到另一个制造的半导体器件的导体而在一个半导体器件的衬底上放置抗蚀剂而具有衬底 使未固化的水泥（例如环氧树脂）在抗蚀剂和另一个基底之间流动，从而允许水泥固化，并从半导体器件中的一个去除衬底。 更具体地说，混合半导体器件由GaAs / AlGaAs多量子阱调制器形成，该GaAs / AlGaAs多量子阱调制器具有衬底和具有衬底的IC芯片，通过在调制器衬底上放置蚀刻抗蚀剂，将调制器的导体与芯片的导体 在调制器和芯片之间吸收未固化的环氧树脂，允许环氧树脂固化，并从调制器中除去衬底。

公开(公告)号：US5962846A

公开(公告)日：1999-10-05

申请号：US920945

申请日：1997-08-29

申请人： Keith Wayne Goossen

发明人： Keith Wayne Goossen

IPC分类号： H01L27/146 ,  H04N1/04 ,  H04N5/217 ,  H04N5/367 ,  H04N5/374 ,  H01J40/14

CPC分类号： H04N5/367 ,  H01L27/14601 ,  H04N5/374

摘要： A detector array for detecting an optical signal includes a plurality of pixels. Each pixel has a plurality of detector elements coupled together in a redundant configuration such that the detector array maintains a substantially uniform response even if each of the pixels includes a number of defective detector elements. The optical signal is lengthened in the direction normal to the information vector, so that each detector element is exposed to the same portion of the optical signal. A bad-element sensor is coupled to each detector element, which is functionally responsive to the detection of a bad detector element.

摘要翻译： 用于检测光信号的检测器阵列包括多个像素。 每个像素具有以冗余配置耦合在一起的多个检测器元件，使得即使每个像素包括多个缺陷检测器元件，检测器阵列也保持基本均匀的响应。 光信号沿垂直于信息向量的方向延长，使得每个检测器元件暴露于光信号的相同部分。 不良元件传感器耦合到每个检测器元件，其在功能上对检测器元件的检测作出响应。