Inert autogenous attrition grinding
    2.
    发明授权
    Inert autogenous attrition grinding 失效
    惰性自体磨耗研磨

    公开(公告)号:US4932166A

    公开(公告)日:1990-06-12

    申请号:US252751

    申请日:1988-10-03

    摘要: A method for grinding an oxygen sensitive ceramic material to a powder which comprises grinding an oxygen sensitive ceramic feed material having an average particle size of between 1 and 200 microns in a contamination free high energy autogenous attrition mill in non-oxidizing fluid in the presence of media for a sufficient time to obtain a specific surface area of at least 5 m.sup.2 /g and preferably at least 9 m.sup.2 /g. The media consists essentially of the same ceramic as the feed material is of high purity and has an average particle size of less than 4 mm and preferably less than 2.5 mm. the ground material may be further treated so that the average particle size is less than one micron and so that the greater than 97 numerical percent of the particles of the finished powder is smaller than 5 microns. The invention includes the finished powder.

    摘要翻译: 一种将氧敏感性陶瓷材料研磨成粉末的方法,该方法包括在非氧化性流体中的无污染的高能自生磨碎机中研磨平均粒度为1至200微米的氧敏感陶瓷进料, 培养基足够的时间以获得至少5m 2 / g,优选至少9m 2 / g的比表面积。 介质基本上由与原料高纯度相同的陶瓷组成,平均粒度小于4毫米,最好小于2.5毫米。 可以进一步处理研磨材料,使得平均粒度小于1微米,使成品粉末的颗粒的大于97数值百分比小于5微米。 本发明包括成品粉末。

    Sintered silicon carbide ceramic body of high electrical resistivity
    3.
    发明授权
    Sintered silicon carbide ceramic body of high electrical resistivity 失效
    烧结碳化硅陶瓷体电阻率高

    公开(公告)号:US4701427A

    公开(公告)日:1987-10-20

    申请号:US789066

    申请日:1985-10-17

    摘要: Sintered silicon carbide body having a D.C. electrical resistivity of at least 10.sup.8 Ohm cm at 25.degree. C., a density of at least 2.95 g/cm.sup.3 is formed upon sintering in a nitrogenous atmosphere at a temperature of about 2250.degree. C. or greater, a shaped body composed essentially of carbon or carbon source material in amount sufficient to provide up to 2.5 percent uncombined carbon; from about 0.4 to about 2.0 percent boron carbide; up to 25 percent of temporary binder and a balance of silicon carbide which is predominantly alpha-phase. The shaped body may additionally include other sintering aids such as BN or Al without destruction of desired high electrical resistivity.

    摘要翻译: 在25℃的DC电阻率为至少108欧姆厘米的烧结碳化硅体上,在约2250℃或更高的温度下在含氮气氛中烧结时形成至少2.95克/厘米3的密度, 基本上由碳或碳源材料组成的成形体,其量足以提供高达2.5%的未组合的碳; 约0.4至约2.0%的碳化硼; 高达25%的临时粘合剂和主要是α相的碳化硅的平衡。 成形体可另外包括其它烧结助剂如BN或Al,而不破坏所需的高电阻率。

    Sintered silicon carbide/graphite/carbon composite ceramic body having
ultrafine grain microstructure
    4.
    发明授权
    Sintered silicon carbide/graphite/carbon composite ceramic body having ultrafine grain microstructure 失效
    具有超细晶粒微结构的烧结碳化硅/石墨/碳复合陶瓷体

    公开(公告)号:US4525461A

    公开(公告)日:1985-06-25

    申请号:US561361

    申请日:1983-12-14

    CPC分类号: C04B35/565

    摘要: Sintered silicon carbide/graphite/carbon composite ceramic body having a homogeneous fine grain microstructure with at least 50 percent of its silicon carbide grains having a size not exceeding about 8 microns and an aspect ratio less than about 3, with graphite grains having an average size not exceeding that of the silicon carbide grains microns uniformly dispersed throughout the matrix of silicon carbide and having a density of at least 75 percent of theoretical can be made by firing of a shaped green body having a density of at least about 45 percent of theoretical, the shaped green body containing graphite of fine particle size, a sintering aid selected from the group consisting of aluminum, beryllium or boron or compounds containing any one or more of these or a mixture of any of the foregoing elements or compounds, silicon carbide having a surface area of from about 5 to about 100 square meters/gram and, optionally, a temporary binder at a sintering temperature of from about 1900.degree. C. to about 2300.degree. C. in an inert atmosphere or vacuum. The process for making such pressureless-sintered composite bodies is relatively undemanding of exact temperature/time control during sintering. Contain embodiments of such composite sintered bodies may electrical-discharge machined.

    摘要翻译: 烧结碳化硅/石墨/碳复合陶瓷体具有均匀的细晶粒微结构,其碳化硅晶粒的至少50%具有不超过约8微米的尺寸,纵横比小于约3,石墨晶粒具有平均尺寸 不超过碳化硅颗粒均匀分散在整个碳化硅基体中并且具有至少理论值的75%的密度的碳化硅颗粒可以通过烧结具有至少约理论值的约45%的成形生坯, 包含细颗粒尺寸的石墨的成形生坯,选自铝,铍或硼的烧结助剂或含有这些或任何上述元素或化合物的任何一种或多种的化合物的化合物,具有 表面积为约5至约100平方米/克,并且任选地为约190℃的烧结温度的临时粘合剂 0℃至约2300℃。 制造这种无压烧结复合体的方法在烧结期间精确的温度/时间控制相对不高。 包含这种复合烧结体的实施例可以进行放电加工。

    Non-oxide sintered ceramic fibers
    5.
    发明授权
    Non-oxide sintered ceramic fibers 失效
    非氧化物烧结陶瓷纤维

    公开(公告)号:US5135895A

    公开(公告)日:1992-08-04

    申请号:US644668

    申请日:1991-01-23

    IPC分类号: C04B35/622

    CPC分类号: C04B35/62227 Y10S264/19

    摘要: A high temperature, preferably polycrystalline, ceramic fiber having a selectable diameter of between 1 and 200 microns. The fiber is stable in an inert atmosphere at a temperature above about 1700.degree. C. and is often stable even in air at a temperature above 1500.degree. C. The fiber comprises a sintered ceramic powder having a maximum particle size less than the diameter of the fiber and an average particle size less than 0.2 times the diameter of the fiber. The ceramic powder is also stable in an inert atmosphere at a temperature above about 1700.degree. C. At least 90% of the ceramic is selected from borides, nitrides, carbides, and silicides. The fiber is characterized by a smooth surface and is preferably out of round.The invention further comprises a textilable sinterable filament, comprising a flexible polymer matrix containing high temperature sinterable ceramic powder particles. The ceramic powder particles are selected from ceramic borides, nitrides, carbides, and silicides. The diameter of the filament is from 2 to 300 microns. The invention also comprises the method for making textilable filament by fiberizing a mixture of a polymer and a sinterable non-oxide fiber and the method wherein the high temperature ceramic fiber is prepared by sintering the textilable sinterable filament as previously described. The invention also includes composites containing such filaments.

    摘要翻译: 具有1至200微米的可选直径的高温,优选多晶陶瓷纤维。 该纤维在惰性气氛中在高于约1700℃的温度下是稳定的,并且即使在高于1500℃的空气中也是稳定的。纤维包含烧结陶瓷粉末,其烧结陶瓷粉末的最大粒径小于 纤维的平均粒径小于纤维直径的0.2倍。 陶瓷粉末在高于约1700℃的惰性气氛中也是稳定的。至少90%的陶瓷选自硼化物,氮化物,碳化物和硅化物。 纤维的特征在于光滑的表面,并且优选地不圆形。 本发明还包括可弯曲的可烧结长丝,其包括含有高温可烧结陶瓷粉末颗粒的柔性聚合物基质。 陶瓷粉末颗粒选自陶瓷硼化物,氮化物,碳化物和硅化物。 长丝的直径为2至300微米。 本发明还包括通过纤维化聚合物和可烧结非氧化物纤维的混合物来制造可弯曲的长丝的方法,以及如前所述通过烧结可熔化的可烧结长丝来制备高温陶瓷纤维的方法。 本发明还包括含有这种长丝的复合材料。

    Method for making hexagonal silicon carbide platelets with the addition
of a growth additive
    9.
    发明授权
    Method for making hexagonal silicon carbide platelets with the addition of a growth additive 失效
    添加生长添加剂制备六方晶碳化硅血小板的方法

    公开(公告)号:US5202105A

    公开(公告)日:1993-04-13

    申请号:US548044

    申请日:1990-07-05

    IPC分类号: C01B31/36 C04B35/80 C30B25/00

    摘要: Crystalline silicon carbide wherein at least 90 weight percent of the silicon carbide is formed from a plurality of hexagonal crystal lattices wherein at least 80 weight percent of the crystals formed from the lattices contain at least a portion of opposing parallel base faces separated by a distance of from 0.5 to 20 microns. The crystals may be in the form of separate particles, e.g. separate platelets, or may comprise an intergrown structure. The crystalline silicon carbide of the invention is produced by heating a porous alpha silicon carbide precursor composition comprising silicon and carbon in intimate contact to a temperature of from 2100.degree. C. to 2500.degree. C. in a non-reactive atmosphere. The materials are high performance materials finding use in reinforcing, high temperature thermal insulating, improvement of thermal shock resistance, and modification of electrical properties.

    摘要翻译: 结晶碳化硅,其中至少90重量%的碳化硅由多个六角晶格形成,其中至少80重量%的由晶格形成的晶体包含至少一部分相对的平行基面, 0.5至20微米。 晶体可以是分开的颗粒的形式,例如, 单独的血小板,或可以包括共生的结构。 本发明的结晶碳化硅通过在非反应性气氛中加热包含硅和碳的多孔α碳化硅前体组合物在2100℃至2500℃的温度下紧密接触来制备。 这些材料是用于增强,高温绝热,提高耐热冲击性和改善电性能的高性能材料。

    Autogenous attrition grinding
    10.
    发明授权
    Autogenous attrition grinding 失效
    自生磨耗研磨

    公开(公告)号:US4775393A

    公开(公告)日:1988-10-04

    申请号:US868954

    申请日:1986-05-30

    摘要: A method for grinding silicon carbide to a submicron powder which comprises grinding a silicon carbide feed material having an average particle size of between 1 and 200 microns in a liquid slurry in a contamination free high energy autogenous attrition mill in the presence of silicon carbide media for a sufficient time to obtain a specific surface area of at least 5 m.sup.2 /g and preferably at least 9 m.sup.2 /g. The media is of high purity and has an average particle size of less than 4 mm and preferably less than 2.5 mm. The ground material is then further treated so that the average particle size is less than one micron and so that greater than 97 numerical percent of the particles of the finished powder is smaller than 5 microns. The invention includes the finished powder.

    摘要翻译: 一种将碳化硅研磨成亚微米粉末的方法,该方法包括在碳化硅介质的存在下,在无污染的高能自生磨耗机中的液体浆料中研磨平均粒径为1至200微米的碳化硅原料, 足以获得至少5m 2 / g,优选至少9m 2 / g的比表面积的时间。 介质的纯度高,平均粒径小于4毫米,优选小于2.5毫米。 然后将研磨材料进一步处理,使得平均粒度小于1微米,因此成品粉末的颗粒大于97数量级小于5微米。 本发明包括成品粉末。