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    Process for adjusting the size and shape of nanostructures
    1.
    发明授权
    Process for adjusting the size and shape of nanostructures 有权

    公开(公告)号：US08163657B2

    公开(公告)日：2012-04-24

    申请号：US12435219

    申请日：2009-05-04

    申请人： Stephen Y. Chou ,  Ying Wang ,  Xiaogan Liang ,  Yixing Liang

    发明人： Stephen Y. Chou ,  Ying Wang ,  Xiaogan Liang ,  Yixing Liang

    IPC分类号： H01L21/477

    CPC分类号： H01L21/0273 ,  Y10S977/888 ,  Y10S977/90

    摘要： In accordance with the invention, a lateral dimension of a microscale device on a substrate is reduced or adjusted by the steps of providing the device with a soft or softened exposed surface; placing a guiding plate adjacent the soft or softened exposed surface; and pressing the guiding plate onto the exposed surface. Under pressure, the soft material flows laterally between the guiding plate and the substrate. Such pressure induced flow can reduce the lateral dimension of line spacing or the size of holes and increase the size of mesas. The same process also can repair defects such as line edge roughness and sloped sidewalls. This process will be referred to herein as pressed self-perfection by liquefaction or P-SPEL.

    PROCESS FOR ADJUSTING THE SIZE AND SHAPE OF NANOSTRUCTURES
    2.
    发明申请
    PROCESS FOR ADJUSTING THE SIZE AND SHAPE OF NANOSTRUCTURES 有权
    调整纳米尺寸和形状的过程

    公开(公告)号：US20100081282A1

    公开(公告)日：2010-04-01

    申请号：US12435219

    申请日：2009-05-04

    申请人： Stephen Y. Chou ,  Ying Wang ,  Xiaogan Liang ,  Yixing Liang

    发明人： Stephen Y. Chou ,  Ying Wang ,  Xiaogan Liang ,  Yixing Liang

    IPC分类号： H01L21/306 ,  B29C59/02 ,  B44C1/22 ,  G03F1/00 ,  H01L21/312

    CPC分类号： H01L21/0273 ,  Y10S977/888 ,  Y10S977/90

    摘要： In accordance with the invention, a lateral dimension of a microscale device on a substrate is reduced or adjusted by the steps of providing the device with a soft or softened exposed surface; placing a guiding plate adjacent the soft or softened exposed surface; and pressing the guiding plate onto the exposed surface. Under pressure, the soft material flows laterally between the guiding plate and the substrate. Such pressure induced flow can reduce the lateral dimension of line spacing or the size of holes and increase the size of mesas. The same process also can repair defects such as line edge roughness and sloped sidewalls. This process will be referred to herein as pressed self-perfection by liquefaction or P-SPEL.

    摘要翻译： 根据本发明，通过为装置提供软或软化的暴露表面的步骤来减小或调节微量元件在基片上的横向尺寸; 将引导板放置在软或软化的暴露表面附近; 并将引导板压在暴露的表面上。 在压力下，软材料在导向板和基板之间横向流动。 这种压力诱导的流动可以减小线间距的横向尺寸或孔的尺寸并增加台面的尺寸。 相同的过程也可以修复诸如线边缘粗糙度和倾斜侧壁的缺陷。 该方法在本文中将被称为通过液化或P-SPEL的压制自我完善。

    Nano-fabricated plasmonic optical transformer
    3.
    发明授权
    Nano-fabricated plasmonic optical transformer 有权
    纳米制造等离子体光学变压器

    公开(公告)号：US09052450B2

    公开(公告)日：2015-06-09

    申请号：US13083228

    申请日：2011-04-08

    申请人： Hyuck Choo ,  Stefano Cabrini ,  P. James Schuck ,  Xiaogan Liang ,  Eli Yablonovitch

    发明人： Hyuck Choo ,  Stefano Cabrini ,  P. James Schuck ,  Xiaogan Liang ,  Eli Yablonovitch

    IPC分类号： G11B5/02 ,  G02F1/035 ,  G11B5/127 ,  G11B11/00 ,  G02B6/122 ,  B82Y20/00 ,  G11B7/1387 ,  G11B7/22

    CPC分类号： G02B6/1226 ,  B82Y20/00 ,  G11B7/1387 ,  G11B7/22 ,  Y10T29/49826 ,  Y10T428/24612

    摘要： The present invention provides a plasmonic optical transformer to produce a highly focuses optical beam spot, where the transformer includes a first metal layer, a dielectric layer formed on the first metal layer, and a second metal layer formed on the dielectric layer, where the first metal layer, the dielectric layer, and the second layer are patterned to a shape including a first section having a first cross section, a second section following the first section having a cross-section tapering from the first section to a smaller cross-section, and a third section following the second section having a cross-section matching the tapered smaller cross-section of the second section.

    摘要翻译： 本发明提供了一种等离子体激元光变换器，用于产生高度聚焦的光束点，其中变压器包括第一金属层，形成在第一金属层上的电介质层和形成在电介质层上的第二金属层，其中第一 金属层，电介质层和第二层被图案化为包括具有第一横截面的第一部分的形状，第一部分之后的第二部分具有从第一部分渐缩到较小横截面的横截面， 以及第二部分之后的第三部分具有匹配第二部分的锥形较小横截面的横截面。

    Method and apparatus of electrical field assisted imprinting
    5.
    发明授权
    Method and apparatus of electrical field assisted imprinting 有权
    电场辅助印迹的方法和装置

    公开(公告)号：US08852494B2

    公开(公告)日：2014-10-07

    申请号：US11933170

    申请日：2007-10-31

    申请人： Stephen Y. Chou ,  Xiaogan Liang

    发明人： Stephen Y. Chou ,  Xiaogan Liang

    IPC分类号： B29C35/00

    CPC分类号： B29C43/021 ,  B29C43/003 ,  B29C43/36 ,  B29C2043/025 ,  B29C2043/3211 ,  B29C2043/3488 ,  B29C2043/568 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

    摘要： A method and apparatus for performing nanoimprint lithography. When an electric field is applied between the mold and the substrate, various forces can be generated among molds, substrates, and resists. The electrostatic force between the mold and the substrate can serve as an imprinting pressure to press the structured mold into the conformable resist. In addition, the electric field induces additional wetting forces (electrowetting or dielectrophoresis) in a liquid resist, which can assist the flow and filling of the liquid resist into fine structures.

    摘要翻译： 一种用于进行纳米压印光刻的方法和装置。 当在模具和基板之间施加电场时，可以在模具，基板和抗蚀剂之间产生各种力。 模具和基板之间的静电力可以用作将结构化模具压入适形抗蚀剂的压印压力。 此外，电场在液体抗蚀剂中引起额外的润湿力（电润湿或介电电泳），这可以帮助将液体抗蚀剂流动和填充到精细结构中。

    METHOD AND APPARATUS OF ELECTRICAL FIELD ASSISTED IMPRINTING
    6.
    发明申请
    METHOD AND APPARATUS OF ELECTRICAL FIELD ASSISTED IMPRINTING 有权
    电场辅助印刷的方法和装置

    公开(公告)号：US20080217822A1

    公开(公告)日：2008-09-11

    申请号：US11933170

    申请日：2007-10-31

    申请人： Stephen Y. Chou ,  Xiaogan Liang

    发明人： Stephen Y. Chou ,  Xiaogan Liang

    IPC分类号： B29C35/08

    CPC分类号： B29C43/021 ,  B29C43/003 ,  B29C43/36 ,  B29C2043/025 ,  B29C2043/3211 ,  B29C2043/3488 ,  B29C2043/568 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

    摘要： A method and apparatus for performing nanoimprint lithography. When an electric field is applied between the mold and the substrate, various forces can be generated among molds, substrates, and resists. The electrostatic force between the mold and the substrate can serve as an imprinting pressure to press the structured mold into the conformable resist. In addition, the electric field induces additional wetting forces (electrowetting or dielectrophoresis) in a liquid resist, which can assist the flow and filling of the liquid resist into fine structures.

    摘要翻译： 一种用于进行纳米压印光刻的方法和装置。 当在模具和基板之间施加电场时，可以在模具，基板和抗蚀剂之间产生各种力。 模具和基板之间的静电力可以用作将结构化模具压入适形抗蚀剂的压印压力。 此外，电场在液体抗蚀剂中引起额外的润湿力（电润湿或介电电泳），这可以帮助将液体抗蚀剂流动和填充到精细结构中。

    Process for adjusting the size and shape of nanostructures
    7.
    发明授权
    Process for adjusting the size and shape of nanostructures 有权
    调整纳米结构尺寸和形状的工艺

    公开(公告)号：US08163656B2

    公开(公告)日：2012-04-24

    申请号：US12419881

    申请日：2009-04-07

    申请人： Stephen Y. Chou ,  Ying Wang ,  Xiaogan Liang ,  Yixing Liang

    发明人： Stephen Y. Chou ,  Ying Wang ,  Xiaogan Liang ,  Yixing Liang

    IPC分类号： H01L21/477

    CPC分类号： H01L21/0272 ,  B81C1/00031 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/40 ,  H01L21/0273 ,  Y10S977/888 ,  Y10S977/90

    摘要： In accordance with the invention, a lateral dimension of a microscale device on a substrate is reduced or adjusted by the steps of providing the device with a soft or softened exposed surface; placing a guiding plate adjacent the soft or softened exposed surface; and pressing the guiding plate onto the exposed surface. Under pressure, the soft material flows laterally between the guiding plate and the substrate. Such pressure induced flow can reduce the lateral dimension of line spacing or the size of holes and increase the size of mesas. The same process also can repair defects such as line edge roughness and sloped sidewalls. This process will be referred to herein as pressed self-perfection by liquefaction or P-SPEL.

    摘要翻译： 根据本发明，通过为装置提供软或软化的暴露表面的步骤来减小或调节微量元件在基片上的横向尺寸; 将引导板放置在软或软化的暴露表面附近; 并将引导板压在暴露的表面上。 在压力下，软材料在导向板和基板之间横向流动。 这种压力诱导的流动可以减小线间距的横向尺寸或孔的尺寸并增加台面的尺寸。 相同的过程也可以修复诸如线边缘粗糙度和倾斜侧壁的缺陷。 该方法在本文中将被称为通过液化或P-SPEL的压制自我完善。

    Process for Adjusting the Size and Shape of Nanostructures
    9.
    发明申请
    Process for Adjusting the Size and Shape of Nanostructures 有权
    调整纳米结构尺寸和形状的工艺

    公开(公告)号：US20100009541A1

    公开(公告)日：2010-01-14

    申请号：US12419881

    申请日：2009-04-07

    申请人： Stephen Y. Chou ,  Ying Wang ,  Xiaogan Liang ,  Yixing Liang

    发明人： Stephen Y. Chou ,  Ying Wang ,  Xiaogan Liang ,  Yixing Liang

    IPC分类号： H01L21/306 ,  B29C59/02 ,  B44C1/22 ,  G03F1/00 ,  H01L21/312

    CPC分类号： H01L21/0272 ,  B81C1/00031 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/40 ,  H01L21/0273 ,  Y10S977/888 ,  Y10S977/90

    摘要： In accordance with the invention, a lateral dimension of a microscale device on a substrate is reduced or adjusted by the steps of providing the device with a soft or softened exposed surface; placing a guiding plate adjacent the soft or softened exposed surface; and pressing the guiding plate onto the exposed surface. Under pressure, the soft material flows laterally between the guiding plate and the substrate. Such pressure induced flow can reduce the lateral dimension of line spacing or the size of holes and increase the size of mesas. The same process also can repair defects such as line edge roughness and sloped sidewalls. This process will be referred to herein as pressed self-perfection by liquefaction or P-SPEL.

    摘要翻译： 根据本发明，通过为装置提供软或软化的暴露表面的步骤来减小或调节微量元件在基片上的横向尺寸; 将引导板放置在软或软化的暴露表面附近; 并将引导板压在暴露的表面上。 在压力下，软材料在导向板和基板之间横向流动。 这种压力诱导的流动可以减小线间距的横向尺寸或孔的尺寸并增加台面的尺寸。 相同的过程也可以修复诸如线边缘粗糙度和倾斜侧壁的缺陷。 该方法在本文中将被称为通过液化或P-SPEL的压制自我完善。