摘要:
The present invention provides a plasmonic optical transformer to produce a highly focuses optical beam spot, where the transformer includes a first metal layer, a dielectric layer formed on the first metal layer, and a second metal layer formed on the dielectric layer, where the first metal layer, the dielectric layer, and the second layer are patterned to a shape including a first section having a first cross section, a second section following the first section having a cross-section tapering from the first section to a smaller cross-section, and a third section following the second section having a cross-section matching the tapered smaller cross-section of the second section.
摘要:
The present invention provides a plasmonic optical transformer to produce a highly focuses optical beam spot, where the transformer includes a first metal layer, a dielectric layer formed on the first metal layer, and a second metal layer formed on the dielectric layer, where the first metal layer, the dielectric layer, and the second layer are patterned to a shape including a first section having a first cross section, a second section following the first section having a cross-section tapering from the first section to a smaller cross-section, and a third section following the second section having a cross-section matching the tapered smaller cross-section of the second section,
摘要:
This disclosure provides systems, methods, and apparatus related to probes for multidimensional nanospectroscopic imaging. In one aspect, a method includes providing a transparent tip comprising a dielectric material. A four-sided pyramidal-shaped structure is formed at an apex of the transparent tip using a focused ion beam. Metal layers are deposited over two opposing sides of the four-sided pyramidal-shaped structure.
摘要:
This disclosure provides systems, methods, and apparatus related to probes for multidimensional nanospectroscopic imaging. In one aspect, a method includes providing a transparent tip comprising a dielectric material. A four-sided pyramidal-shaped structure is formed at an apex of the transparent tip using a focused ion beam. Metal layers are deposited over two opposing sides of the four-sided pyramidal-shaped structure.
摘要:
An omnidirectional optical reflector structure (41, 52, 61) is made by forming a plurality of holes in a solid body (11) so as to result in a face-centered cubic lattice. Conventiently, the desired structure can be made by three successive steps of microfabrication, e.g., in the presence of a mask layer (12). Preferred reflector structures can be used, e.g., as external mirrors as filters, and as cavity materials of communications lasers with improved signal-to-noise ratio.
摘要:
In a laser pulse generator, short pulses adjustable in the range between about 0.1 and 0.5 nanoseconds are produced by improved spectral filtering of the output of a gas breakdown switch. The spectral filter in one embodiment is a hot, linearly absorbing gas cell that passes both sidebands of the radiation producing the gas breakdown in the switch and that linearly absorbs the center frequency. A second embodiment uses a tandem dual-slit monochromator as the spectral filter in order to pass both sidebands. The hot gas cell is simpler, cheaper and characterized by a higher rejection ratio than any other alternative to date. It yields very clean pulses with a steeper leading edge than prior techniques. The leading edge is highly reproducible, as needed for nuclear fusion work. The advantage over prior pulsed CO.sub.2 lasers for nuclear fusion work is substantial, since those prior lasers have not achieved pulse durations less than one nanosecond.
摘要:
In the fabrication of microelectronic, optoelectronic, and photonic devices, methods are being used which involve selective processing of material in the presence of a patterned mask layer; for example, such processing may involve etching. Typically, mask layer material is chosen on the basis of response to suitable radiation, allowing for patterning by selective irradiation followed by selective removal of mask layer material. However, in so-called epitaxial lift-off processing, material to be processed may be covered with a support layer of a material which is selected in view of desired mechanical and thermal properties, and which is not amenable to patterning by radiation. A method is described which provides for patterning of such layer by heated mechanical means such as a heated stylus or roller.
摘要:
A method for removing an epitaxial film from a single crystal substrate upon which it is grown and adhering the films to second substrate and the resultant structure. The removing method comprises (a) providing a thin release layer (.ltoreq.100 nm) between the film to be grown and the single crystal substrate; (b) growing the epitaxial film; (c) applying a polymeric support layer which is under tension over the film; and (d) selectively etching the release layer, the tension in the support layer causing the edges of the film to curve upwardly as the release layer is etched away. The adhering method uses either adhesives or relies solely on Van der Waals bonding between the epitaxial film and the second substrate.
摘要:
A method for removing epitaxial films from a single crystal substrate upon which it is grown comprising (a) providing a thin release layer (.ltoreq.1000A) between the film to be grown and the substrate; (b) growing the epitaxial film(s); (c) applying a polymeric support layer which is under tension over the film; and (d) selectively etching the release layer, the tension in the support layer causing the edges of the film to curve upwardly as the release layer is etched away.
摘要:
The present invention is a method for producing an optically enhanced thin film photovoltaic device.The method includes the steps of producing an active layer of semiconductor material wherein the surface of at least one side of the active layer is textured such that the surface includes randomly spaced, densely packed microstructures of predetermined dimensions of the order of the wavelength of visible light in the semiconductor material and attaching a reflecting surface directly to one side of the semiconductor material and making an ohmic contact to the material.