公开(公告)号：US09589803B2

公开(公告)日：2017-03-07

申请号：US13572494

申请日：2012-08-10

申请人： Neng-Kuo Chen ,  Clement Hsingjen Wann ,  Yi-An Lin ,  Chun-Wei Chang ,  Sey-Ping Sun

发明人： Neng-Kuo Chen ,  Clement Hsingjen Wann ,  Yi-An Lin ,  Chun-Wei Chang ,  Sey-Ping Sun

IPC分类号： H01L29/94 ,  H01L21/28 ,  H01L21/3105 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/165

CPC分类号： H01L29/66545 ,  H01L21/28123 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/32135 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

摘要： This description relates to a gate electrode of a field effect transistor. An exemplary structure for a field effect transistor includes a substrate; a gate electrode over the substrate including a first top surface and a sidewall; a source/drain (S/D) region at least partially disposed in the substrate on one side of the gate electrode; a spacer on the sidewall distributed between the gate electrode and the S/D region; and a contact etch stop layer (CESL) adjacent to the spacer and further comprising a portion extending over the S/D region, wherein the portion has a second top surface substantially coplanar with the first top surface.

摘要翻译： 该描述涉及场效应晶体管的栅电极。 场效应晶体管的示例性结构包括：衬底; 位于所述基板上方的包括第一顶表面和侧壁的栅电极; 至少部分地设置在所述栅电极的一侧的所述衬底中的源极/漏极（S / D）区域; 在所述侧壁上的间隔物分布在所述栅电极和所述S / D区之间; 以及与所述间隔物相邻的接触蚀刻停止层（CESL），并且还包括在所述S / D区域上延伸的部分，其中所述部分具有与所述第一顶表面基本上共面的第二顶表面。

公开(公告)号：US20140191333A1

公开(公告)日：2014-07-10

申请号：US13735949

申请日：2013-01-07

申请人： Chun-Wei CHANG ,  Yi-An LIN ,  Neng-Kuo CHEN ,  Sey-Ping SUN ,  Clement Hsingjen WANN ,  Yu-Lien HUANG

发明人： Chun-Wei CHANG ,  Yi-An LIN ,  Neng-Kuo CHEN ,  Sey-Ping SUN ,  Clement Hsingjen WANN ,  Yu-Lien HUANG

IPC分类号： H01L29/06 ,  H01L21/02

CPC分类号： H01L21/022 ,  H01L29/66545

摘要： This description relates to a method including forming an interlayer dielectric (ILD) layer and a dummy gate structure over a substrate and forming a cavity in a top portion of the ILD layer. The method further includes forming a protective layer to fill the cavity. The method further includes planarizing the protective layer. A top surface of the planarized protective layer is level with a top surface of the dummy gate structure. This description also relates to a semiconductor device including first and second gate structures and an ILD layer formed on a substrate. The semiconductor device further includes a protective layer formed on the ILD layer, the protective layer having a different etch selectivity than the ILD layer, where a top surface of the protective layer is level with the top surfaces of the first and second gate structures.

摘要翻译： 该描述涉及包括在衬底上形成层间电介质（ILD）层和虚拟栅极结构并在ILD层的顶部形成腔的方法。 该方法还包括形成保护层以填充空腔。 该方法还包括平坦化保护层。 平坦化保护层的顶表面与虚拟栅结构的顶表面平齐。 该描述还涉及包括第一和第二栅极结构以及形成在衬底上的ILD层的半导体器件。 半导体器件还包括形成在ILD层上的保护层，保护层具有与ILD层不同的蚀刻选择性，其中保护层的顶表面与第一和第二栅极结构的顶表面平齐。

公开(公告)号：US20130262430A1

公开(公告)日：2013-10-03

申请号：US13434843

申请日：2012-03-29

申请人： Krishnan Thazhathekalam ,  David D. Ahn ,  Andrea Burbank ,  Taroon Mandhana ,  David Simpson ,  Yi-An Lin

发明人： Krishnan Thazhathekalam ,  David D. Ahn ,  Andrea Burbank ,  Taroon Mandhana ,  David Simpson ,  Yi-An Lin

IPC分类号： G06F17/30

CPC分类号： G06F16/58 ,  G06F16/9535

摘要： Architecture that computes a dominant image from one or more images on a webpage. A dominant image classifier scans webpages in an offline-created index to identify the prominent images in the webpages. In a more specific implementation the image selected is the image associated with a name query. Face detection technology can be utilized to identify which of the images on a given webpage contain faces. A query classifier identifies queries that contain people names. In the context of search engines and search result pages, the web results for name queries can further include prominent people face images as thumbnail images. Additional facts (structured data) can further be included that together with the results elements of caption title, snippet and attribute (uniform resource locator (URL)) provide an improved summary of the person on the page.

摘要翻译： 从网页上的一个或多个图像计算显性图像的体系结构。 主要图像分类器在离线创建的索引中扫描网页以识别网页中的突出图像。 在更具体的实现中，所选择的图像是与名称查询相关联的图像。 脸部检测技术可用于识别给定网页上的哪些图像包含脸部。 查询分类器识别包含人员名称的查询。 在搜索引擎和搜索结果页面的上下文中，用于名称查询的网页结果可以进一步包括突出人物将图像作为缩略图。 可以进一步包括附加事实（结构化数据），与标题标题，片段和属性（统一资源定位符（URL））的结果元素一起提供页面上人员的改进摘要。

公开(公告)号：US08452752B2

公开(公告)日：2013-05-28

申请号：US13102489

申请日：2011-05-06

申请人： Kevin Haas ,  Yi-An Lin ,  Shankar Kalyanaraman ,  Sameer Indarapu

发明人： Kevin Haas ,  Yi-An Lin ,  Shankar Kalyanaraman ,  Sameer Indarapu

IPC分类号： G06F7/00

CPC分类号： G06F17/30864

摘要： Methods, systems, and computer-storage media having computer-usable instructions embodied thereon, for prioritizing crawl lists based on social networking rankings are provided. Various scores are associated with users based on a variety of factors including activity levels with respect to social networking services, activity levels with respect to search engines, and interactions with other users in a social networking environment. The scores are used to compute a ranking for the users and, based on the rankings, a crawl list is prioritized such that content associated with the social networking environment is crawled at an appropriate time.

摘要翻译： 提供了具有其上体现计算机可用指令的方法，系统和计算机存储介质，用于基于社交网络排名来优先处理爬取列表。 基于各种因素，包括关于社交网络服务的活动水平，关于搜索引擎的活动水平以及与社交网络环境中的其他用户的交互的各种因素，各种分数与用户相关联。 分数用于计算用户的排名，并且基于排名，将抓取列表优先排列，使得在适当的时间爬行与社交网络环境相关联的内容。

公开(公告)号：US08853052B2

公开(公告)日：2014-10-07

申请号：US13204352

申请日：2011-08-05

申请人： Gin-Chen Huang ,  Yi-An Lin ,  Ching-Hong Jiang ,  Neng-Kuo Chen ,  Sey-Ping Sun ,  Clement Hsingjen Wann

发明人： Gin-Chen Huang ,  Yi-An Lin ,  Ching-Hong Jiang ,  Neng-Kuo Chen ,  Sey-Ping Sun ,  Clement Hsingjen Wann

IPC分类号： H01L21/76 ,  H01L29/00 ,  H01L21/308 ,  H01L21/3105 ,  H01L21/762

CPC分类号： H01L21/76224 ,  H01L21/3081 ,  H01L21/31053 ,  H01L21/31055

摘要： A method for fabricating a semiconductor device is disclosed. An exemplary method includes a providing substrate. A dielectric layer is formed over the semiconductor substrate and a stop layer is formed over the dielectric layer. The stop layer and the dielectric layer comprise a different material. The method further includes forming a patterned hard mask layer over the stop layer and etching the semiconductor substrate through the patterned hard mask layer to form a plurality of trenches. The method also includes depositing an isolation material on the semiconductor substrate and substantially filling the plurality of trenches. Thereafter, performing a CMP process on the semiconductor substrate, wherein the CMP process stops on the stop layer.

摘要翻译： 公开了一种制造半导体器件的方法。 一种示例性方法包括提供衬底。 在半导体衬底上形成电介质层，并在电介质层上形成阻挡层。 阻挡层和电介质层包括不同的材料。 该方法还包括在停止层上形成图案化的硬掩模层，并通过图案化的硬掩模层蚀刻半导体衬底以形成多个沟槽。 该方法还包括在半导体衬底上沉积隔离材料并基本上填充多个沟槽。 此后，在半导体衬底上执行CMP处理，其中CMP处理在停止层上停止。

公开(公告)号：US08425818B2

公开(公告)日：2013-04-23

申请号：US12129312

申请日：2008-05-29

申请人： Yi An Lin ,  Ming-Tsai Liang

发明人： Yi An Lin ,  Ming-Tsai Liang

IPC分类号： B29B9/02

CPC分类号： B29B9/065 ,  B29C47/0011 ,  B29C47/88 ,  Y10T83/647 ,  Y10T83/8847 ,  Y10T408/6757

摘要： A pelletizing machine for forming pellets from extruded material includes an extruder having at least one exit port and a body defining a cutting chamber through which high-temperature liquid flows, flooding the cutting chamber. The exit port of the extruder opens into the cutting chamber, which includes a cutting section defining a flow path for liquid through the cutting section. A cutter in the cutting section of the cutting chamber is mounted for rotation about an axis generally perpendicular to the first direction and disposed for cutting the extruded material exiting the exit port into the pellets. The axis of rotation of the cutter is parallel to or coincident with the flow path of the cutting section. A method for forming pellets of thermoplastic material with a foaming agent is also disclosed.

摘要翻译： 用于从挤出材料形成颗粒的造粒机包括具有至少一个出口和限定切割室的主体的挤出机，高温液体通过该切割室流动，溢流切割室。 挤出机的出口通向切割室，该切割室包括限定通过切割部分的液体流动路径的切割部分。 切割室的切割部分中的切割器被安装成围绕大致垂直于第一方向的轴线旋转，并被设置用于将离开出口的挤出材料切割成颗粒。 切割器的旋转轴线与切割部分的流动路径平行或重合。 还公开了一种用发泡剂形成热塑性材料颗粒的方法。

公开(公告)号：US20110072000A1

公开(公告)日：2011-03-24

申请号：US12563151

申请日：2009-09-20

申请人： Kevin Haas ,  Yi-An Lin ,  Christopher C. LuVogt

发明人： Kevin Haas ,  Yi-An Lin ,  Christopher C. LuVogt

IPC分类号： G06F17/30

CPC分类号： G06F17/30991 ,  G06F17/30643 ,  G06F17/30864 ,  G06F17/30867

摘要： The present invention provides a method and system for generating search results including receiving a search request and accessing a corpus of data relating to web content to determine relevant content. The method and system includes determining at least one semantic object in the search results set and generating an object filter on the basis of the at least one semantic object. The method and system further includes generating a search result output display for the presentation of at least a portion of the search result set and active data links for one or more of the semantic objects and toggling the search result output display to present at least a portion of a subset of the search results set in response to selection of a given active data link, the subset including content having semantic object associated therewith.

摘要翻译： 本发明提供一种用于生成搜索结果的方法和系统，包括接收搜索请求并访问与web内容有关的数据的语料库以确定相关内容。 该方法和系统包括确定搜索结果集中的至少一个语义对象，并且基于至少一个语义对象生成对象过滤器。 该方法和系统还包括生成用于呈现搜索结果集的至少一部分的搜索结果输出显示和用于一个或多个语义对象的活动数据链接，并且切换搜索结果输出显示以呈现至少一部分 响应于给定活动数据链路的选择而设置的搜索结果的子集，该子集包括具有与之相关联的语义对象的内容。

公开(公告)号：US09263252B2

公开(公告)日：2016-02-16

申请号：US13735949

申请日：2013-01-07

申请人： Chun-Wei Chang ,  Yi-An Lin ,  Neng-Kuo Chen ,  Sey-Ping Sun ,  Clement Hsingjen Wann ,  Yu-Lien Huang

发明人： Chun-Wei Chang ,  Yi-An Lin ,  Neng-Kuo Chen ,  Sey-Ping Sun ,  Clement Hsingjen Wann ,  Yu-Lien Huang

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L21/022 ,  H01L29/66545

摘要： This description relates to a method including forming an interlayer dielectric (ILD) layer and a dummy gate structure over a substrate and forming a cavity in a top portion of the ILD layer. The method further includes forming a protective layer to fill the cavity. The method further includes planarizing the protective layer. A top surface of the planarized protective layer is level with a top surface of the dummy gate structure. This description also relates to a semiconductor device including first and second gate structures and an ILD layer formed on a substrate. The semiconductor device further includes a protective layer formed on the ILD layer, the protective layer having a different etch selectivity than the ILD layer, where a top surface of the protective layer is level with the top surfaces of the first and second gate structures.

摘要翻译： 该描述涉及包括在衬底上形成层间电介质（ILD）层和虚拟栅极结构并在ILD层的顶部形成腔的方法。 该方法还包括形成保护层以填充空腔。 该方法还包括平坦化保护层。 平坦化保护层的顶表面与虚拟栅结构的顶表面平齐。 该描述还涉及包括第一和第二栅极结构以及形成在衬底上的ILD层的半导体器件。 半导体器件还包括形成在ILD层上的保护层，保护层具有与ILD层不同的蚀刻选择性，其中保护层的顶表面与第一和第二栅极结构的顶表面平齐。

公开(公告)号：US20140042491A1

公开(公告)日：2014-02-13

申请号：US13572494

申请日：2012-08-10

申请人： Neng-Kuo CHEN ,  Clement Hsingjen WANN ,  Yi-An LIN ,  Chun-Wei CHANG ,  Sey-Ping SUN

发明人： Neng-Kuo CHEN ,  Clement Hsingjen WANN ,  Yi-An LIN ,  Chun-Wei CHANG ,  Sey-Ping SUN

IPC分类号： H01L29/38 ,  H01L21/306

CPC分类号： H01L29/66545 ,  H01L21/28123 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/32135 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

摘要： This description relates to a gate electrode of a field effect transistor. An exemplary structure for a field effect transistor includes a substrate; a gate electrode over the substrate including a first top surface and a sidewall; a source/drain (S/D) region at least partially disposed in the substrate on one side of the gate electrode; a spacer on the sidewall distributed between the gate electrode and the S/D region; and a contact etch stop layer (CESL) adjacent to the spacer and further comprising a portion extending over the S/D region, wherein the portion has a second top surface substantially coplanar with the first top surface.

摘要翻译： 该描述涉及场效应晶体管的栅电极。 场效应晶体管的示例性结构包括：衬底; 位于所述基板上方的包括第一顶表面和侧壁的栅电极; 至少部分地设置在所述栅电极的一侧的所述衬底中的源极/漏极（S / D）区域; 在所述侧壁上的间隔物分布在所述栅电极和所述S / D区之间; 以及与所述间隔物相邻的接触蚀刻停止层（CESL），并且还包括在所述S / D区域上延伸的部分，其中所述部分具有与所述第一顶表面基本上共面的第二顶表面。

公开(公告)号：US20130110802A1

公开(公告)日：2013-05-02

申请号：US13282001

申请日：2011-10-26

申请人： RAJESH KRISHNA SHENOY ,  CHARLES C. CARSON, JR. ,  YI-AN LIN ,  TIMOTHY ANDREW HARRINGTON ,  SAMEER INDARAPU

发明人： RAJESH KRISHNA SHENOY ,  CHARLES C. CARSON, JR. ,  YI-AN LIN ,  TIMOTHY ANDREW HARRINGTON ,  SAMEER INDARAPU

IPC分类号： G06F17/30

CPC分类号： G06F16/955

摘要： Systems, methods, and computer-readable storage media for tagging uniform resource locators (URLs) included in a search engine results page are provided. Upon receipt of a search query that includes a name of an entity, the server device provides search results and entry fields to tag one or more URLs that correspond to the entity. The server device obtains a social network of the user that provided the query. The server device processes the social network to locate entities that match the query and that are within a threshold number of hops. The user may tag one or more URLs with social network account information for the entities based on authorization information received from an owner that manages the social network account.

摘要翻译： 提供了用于标记包括在搜索引擎结果页面中的统一资源定位符（URL）的系统，方法和计算机可读存储介质。 在接收到包括实体的名称的搜索查询时，服务器设备提供搜索结果和输入字段以标记对应于该实体的一个或多个URL。 服务器设备获得提供查询的用户的社交网络。 服务器设备处理社交网络以定位与查询匹配并且在阈值跳数内的实体。 用户可以基于从管理社交网络帐户的所有者接收到的授权信息来标记一个或多个具有针对实体的社交网络帐户信息的URL。