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    Packing bag structure
    1.
    发明授权
    Packing bag structure 有权
    包装袋结构

    公开(公告)号：US07569263B2

    公开(公告)日：2009-08-04

    申请号：US10944410

    申请日：2004-09-20

    申请人： Takashi Hanaichi ,  Ken Nishizawa ,  Yoshiki Kato

    发明人： Takashi Hanaichi ,  Ken Nishizawa ,  Yoshiki Kato

    IPC分类号： B32B1/08 ,  B32B27/08 ,  B29D22/00 ,  B29D23/00

    CPC分类号： B65B31/04 ,  B32B27/08 ,  B32B27/302 ,  B32B27/32 ,  B32B27/36 ,  B32B2250/02 ,  B32B2250/242 ,  B32B2255/10 ,  B32B2307/724 ,  B32B2307/726 ,  B32B2439/46 ,  B32B2439/70 ,  B65B9/06 ,  B65B2230/02 ,  B65D75/38 ,  B65D75/44 ,  Y10T428/1334 ,  Y10T428/1341 ,  Y10T428/1352 ,  Y10T428/1379

    摘要： A packing bag structure formed of inner and outer bag members made of synthetic resin inner and outer films having different moisture permeabilities enables easy-to-dry moist foods or other perishable products to be packed in a suitable state and stored in a non-soggy and untarnished condition. The inner film has moisture permeability of 9 to 200 g/(m2·24 h), preferably 20 to 30 g/(m2·24 h), and the outer film has moisture permeability of 4 to 15 g/(m2·24 h), preferably 7 to 10 g/(m2·24 h). The packing bag is produced by folding a long film sheet formed of the inner and outer films into two, having an article such as food placed between the twofold film sheet, thermally sealing the film sheet by using an end sealer and cutting off the packed and sealed portion.

    摘要翻译： 由具有不同水分渗透性的合成树脂内外膜制成的内袋和外袋构成的包装袋结构使得易于干燥的潮湿食品或其它易腐食品以适合的状态包装并储存在非潮湿和 无病条件 内膜的透气度为9〜200g /（m2·24h），优选为20〜30g /（m2·24h），外膜的透湿度为4〜15g /（m2·24h） ），优选为7〜10g /（m2·24h）。 包装袋通过将由内膜和外膜形成的长膜片折叠成两个而制成，其具有放置在双层膜片之间的食品，通过使用端部密封剂热封膜膜并切断包装物 密封部分。

    Brushless motor
    2.
    发明授权
    Brushless motor 有权
    无刷电机

    公开(公告)号：US06853106B2

    公开(公告)日：2005-02-08

    申请号：US10030171

    申请日：2001-05-31

    申请人： Kenji Fujiwara ,  Akira Nishio ,  Yoshiki Kato ,  Masahiro Hirano ,  Takatoshi Kogure ,  Tsutomu Baba

    发明人： Kenji Fujiwara ,  Akira Nishio ,  Yoshiki Kato ,  Masahiro Hirano ,  Takatoshi Kogure ,  Tsutomu Baba

    IPC分类号： H02K1/27 ,  H02K21/16 ,  H02K1/00

    CPC分类号： H02K1/2713 ,  B60L2220/14 ,  H02K1/276 ,  H02K21/16 ,  Y02T10/641

    摘要： A brushless motor capable of increasing energy density by effective utilization of reluctance torque. The brushless motor comprises a stator (5) and a rotor (1) having a lateral surface opposed to the stator (5). The stator (5) comprises a plurality of radially extending iron cores (10) and a plurality of windings (11) for generating a magnetic field in each iron core (10). The rotor (1) comprises a plurality of permanent magnets (2) and a magnetic field line inducing body disposed between each permanent magnet (2) and the lateral surface.

    摘要翻译： 一种能够有效利用磁阻转矩来提高能量密度的无刷电动机。 无刷电动机包括定子（5）和具有与定子（5）相对的侧面的转子（1）。 定子（5）包括多个径向延伸的铁芯（10）和用于在每个铁芯（10）中产生磁场的多个绕组（11）。 转子（1）包括多个永磁体（2）和设置在每个永磁体（2）和侧表面之间的磁场线诱导体。

    Magnetic disk including protective layer having surface with protrusions, and substrate therefor
    3.
    发明授权
    Magnetic disk including protective layer having surface with protrusions, and substrate therefor 失效
    磁盘包括具有突起表面的保护层及其基板

    公开(公告)号：US06303205B1

    公开(公告)日：2001-10-16

    申请号：US09313283

    申请日：1999-05-18

    申请人： Hideaki Tanaka ,  Kenichi Gomi ,  Yoshihiko Miyake ,  Sigeru Sano ,  Youichi Inomata ,  Hiroshi Yashiki ,  Yoshiki Kato ,  Masaki Ohura

    发明人： Hideaki Tanaka ,  Kenichi Gomi ,  Yoshihiko Miyake ,  Sigeru Sano ,  Youichi Inomata ,  Hiroshi Yashiki ,  Yoshiki Kato ,  Masaki Ohura

    IPC分类号： B32B302

    CPC分类号： G11B5/6005 ,  G11B5/41 ,  G11B5/581 ,  G11B5/72 ,  G11B5/82 ,  G11B5/8408 ,  G11B23/505 ,  Y10S428/90 ,  Y10T428/24355 ,  Y10T428/24537 ,  Y10T428/2457

    摘要： A magnetic disk includes a substrate, a magnetic layer, and a protective layer. At least one region of a surface of the magnetic disk has protrusions. A height of each of the protrusions is not less than 5 nm and not greater than 40 nm, and is within ±30% of an average height of the protrusions. A density of the protrusions is not less than 200/mm2 and is not greater than 250,000/mm2. A width of a surface of each of the protrusions in a radial direction of the magnetic disk is not less than 0.1 &mgr;m and is not greater than 10 &mgr;m. The protrusions are discrete protrusions aligned in a spiral direction of the magnetic disk at a predetermined spacing in the radial direction of the magnetic disk. The at least one region of the surface of the magnetic disk includes flat areas between the protrusions. At least some of the flat areas extend continuously from an inner redius of the at least one region of the surface of the magnetic disk to an outer radius of t he at least one region of the surface of the magnetic disk.

    摘要翻译： 磁盘包括基板，磁性层和保护层。 磁盘表面的至少一个区域具有突起。 每个突起的高度不小于5nm且不大于40nm，并且在突起的平均高度的±30％以内。 突起的密度不小于200 / mm 2，不大于250,000 / mm2。 每个突起在磁盘的径向方向上的宽度不小于0.1μm并且不大于10μm。 突起是在磁盘的径向方向上以预定间隔在磁盘的螺旋方向上对齐的离散突起。 磁盘表面的至少一个区域包括突起之间的平坦区域。 至少一些平坦区域从磁盘表面的至少一个区域的内部重新连续延伸到磁盘表面的至少一个区域的外半径。

    Magnetic disk manufacturing method
    5.
    发明授权
    Magnetic disk manufacturing method 失效
    磁盘制造方法

    公开(公告)号：US5411630A

    公开(公告)日：1995-05-02

    申请号：US149770

    申请日：1993-11-10

    申请人： Norikazu Nagase ,  Yoshihiro Moriguchi ,  Youichi Inomata ,  Hiroshi Yashiki ,  Masaki Ohura ,  Yoshiki Kato

    发明人： Norikazu Nagase ,  Yoshihiro Moriguchi ,  Youichi Inomata ,  Hiroshi Yashiki ,  Masaki Ohura ,  Yoshiki Kato

    IPC分类号： G11B5/72 ,  G11B5/82 ,  G11B5/84 ,  B44C1/22

    CPC分类号： G11B5/8408 ,  G11B5/72 ,  G11B5/82

    摘要： A method of forming projections on major surfaces of a disk comprises the steps of supporting the disk in a space, spraying a multiplicity of fine solid particles into the space, charging the sprayed fine solid particles with electricity of the same polarity so that the fine solid particles are floating in the space in a mutually separated state due to electric repellent forces acting between the fine solid particles, electrostatically depositing the fine solid particles charged with electricity on the surfaces of the disk, and etching the disk surfaces by using the deposited fine solid particles as masks, thereby forming a multiplicity of projections on the disk surfaces.

    摘要翻译： 在盘的主表面上形成突起的方法包括以下步骤：将盘支撑在空间中，将多个细小固体颗粒喷射到该空间中，用相同极性的电为喷射的细固体颗粒充电，使得细固体 颗粒在相互分离的状态下漂浮在空间中，这是由于在微细固体颗粒之间作用的疏斥力，在盘的表面上静电沉积带电的细小固体颗粒，并通过使用沉积的细固体蚀刻盘表面 颗粒作为掩模，从而在盘表面上形成多个突起。

    Semiconductor device with a depletion channel and method of manufacturing the same
    8.
    发明授权
    Semiconductor device with a depletion channel and method of manufacturing the same 有权
    具有耗尽通道的半导体器件及其制造方法

    公开(公告)号：US09070769B2

    公开(公告)日：2015-06-30

    申请号：US13184654

    申请日：2011-07-18

    申请人： Yoshiki Kato

    发明人： Yoshiki Kato

    IPC分类号： H01L27/12 ,  H01L29/78 ,  H01L21/033 ,  H01L21/762 ,  H01L29/10

    CPC分类号： H01L29/7833 ,  H01L21/0332 ,  H01L21/76224 ,  H01L21/76237 ,  H01L29/1079

    摘要： According to embodiments, a semiconductor device includes a semiconductor substrate and an element isolation insulating film which isolates a element formation region in a surface portion of the semiconductor substrate. A depletion-type channel region of a first conductivity type is formed in an inner region which is in the element formation region of the semiconductor substrate and is a predetermined distance or more away from the element isolation insulating film. A gate electrode is formed above the element formation region with a gate insulating film located in between in such a manner as to traverse over the channel region and to overlap with portions of the element isolation insulating film which are located on both sides of the element formation region. Source/drain regions of the first conductivity type are formed in the channel region respectively on both sides of the gate electrode.

    摘要翻译： 根据实施例，半导体器件包括半导体衬底和隔离半导体衬底的表面部分中的元件形成区域的元件隔离绝缘膜。 第一导电类型的耗尽型沟道区形成在位于半导体衬底的元件形成区域中的与元件隔离绝缘膜相距预定距离或更远的内部区域中。 栅极电极形成在元件形成区域的上方，栅极绝缘膜位于其间，以便穿过沟道区域并与位于元件形成两侧的元件隔离绝缘膜的部分重叠 地区。 第一导电类型的源/漏区分别形成在栅极两侧的沟道区中。

    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
    9.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
    半导体存储器件及其制造方法

    公开(公告)号：US20120068244A1

    公开(公告)日：2012-03-22

    申请号：US13236771

    申请日：2011-09-20

    申请人： Yoshiki KATO

    发明人： Yoshiki KATO

    IPC分类号： H01L29/788 ,  H01L21/266

    CPC分类号： H01L27/11521 ,  H01L29/40114

    摘要： According to an embodiment, a semiconductor memory device includes a plurality of multi-level memory cells provided on a major surface of a semiconductor substrate of a first conductivity type. A first semiconductor region of a second conductivity type is selectively provided in the surface of the semiconductor substrate between the multi-level memory cells. A second semiconductor region is provided deeper than the first semiconductor region and includes a first conductivity type impurity. A plurality of binary memory cells are provided on the major surface of the semiconductor substrate, and a third semiconductor region of the second conductivity type is selectively provided in the surface of the semiconductor substrate between the binary memory cells. Amount of the first conductivity type impurity compensating a second conductivity type impurity of the first semiconductor region is larger than that of the third semiconductor region.

    摘要翻译： 根据实施例，半导体存储器件包括设置在第一导电类型的半导体衬底的主表面上的多个多电平存储单元。 在多层存储单元之间的半导体衬底的表面中选择性地提供第二导电类型的第一半导体区域。 第二半导体区域被设置为比第一半导体区域更深，并且包括第一导电型杂质。 在半导体衬底的主表面上提供多个二进制存储单元，并且在二进制存储单元之间的半导体衬底的表面中选择性地提供第二导电类型的第三半导体区域。 补偿第一半导体区域的第二导电类型杂质的第一导电类型杂质的量大于第三半导体区域的量。

    Magnetic recording medium, process for producing the same and magnetic recording system
    10.
    发明授权
    Magnetic recording medium, process for producing the same and magnetic recording system 失效
    磁记录介质，制造过程及磁记录系统

    公开(公告)号：US5815343A

    公开(公告)日：1998-09-29

    申请号：US967346

    申请日：1997-10-27

    申请人： Akira Ishikawa ,  Yoshihiro Shiroishi ,  Yuzuru Hosoe ,  Yotsuo Yahisa ,  Tomoo Yamamoto ,  Masukazu Igarashi ,  Akira Osaki ,  Yoshiki Kato ,  Jun Fumioka

    发明人： Akira Ishikawa ,  Yoshihiro Shiroishi ,  Yuzuru Hosoe ,  Yotsuo Yahisa ,  Tomoo Yamamoto ,  Masukazu Igarashi ,  Akira Osaki ,  Yoshiki Kato ,  Jun Fumioka

    IPC分类号： G11B5/012 ,  G11B5/39 ,  G11B5/62 ,  G11B5/64 ,  G11B5/66 ,  G11B5/73 ,  G11B5/84 ,  G11B5/78 ,  G11B5/82 ,  G11B17/00

    CPC分类号： G11B5/012 ,  G11B5/39 ,  G11B5/64 ,  G11B5/656 ,  G11B5/66 ,  G11B5/7315 ,  G11B5/7325 ,  G11B5/8404

    摘要： A magnetic recording medium includes a non-magnetic substrate, and a magnetic layer provided on the non-magnetic substrate. The value of the product Br.sub.1 .delta. of the residual flux density Br.sub.1 of the magnetic layer determined in a recording direction and the thickness .delta. of the magnetic layer is not less than 5 G.mu.m and not more than 180 G.mu.m; the value of the ratio of Br.sub.1 to the residual flux density Br.sub.2 determined in a direction parallel to the substrate plane and perpendicular to the recording direction, Br.sub.1 /Br.sub.2, is not less than 1.3 and not more than 3; the surface of the non-magnetic substrate has texture grooves therein extending predominantly in the recording direction; and the average roughness factor Ra of the surface of the magnetic layer determined in a direction perpendicular to the substrate plane and perpendicular to the recording direction is not less than 0.3 nm and not more than 1.9 nm. Alternatively, the value of the product Br.delta. of the residual flux density Br of the magnetic layer determined in the recording direction and the thickness .delta. of the magnetic layer is not less than 5 G.mu.m and not more than 80 G.mu.m; and the value of the anisotropic magnetic field H.sub.k of the magnetic recording medium is not less than 7 kOe and not more than 20 kOe.

    摘要翻译： 磁记录介质包括非磁性衬底和设置在非磁性衬底上的磁性层。 在记录方向上确定的磁性层的剩余磁通密度Br1和磁性层的厚度δ的乘积Br1δ的值不小于5Gm且不大于180Gm; 在平行于基板平面并垂直于记录方向Br1 / Br2的方向上确定的Br1与剩余通量密度Br2的比值不小于1.3且不大于3; 非磁性基板的表面具有主要在记录方向上延伸的织构槽; 并且在垂直于基板平面并垂直于记录方向的方向上确定的磁性层的表面的平均粗糙度Ra不小于0.3nm且不大于1.9nm。 或者，在记录方向上确定的磁性层的剩余磁通密度Br和磁性层的厚度δ的乘积Br delta的值不小于5Gm且不大于80Gm; 并且磁记录介质的各向异性磁场Hk的值不小于7kOe且不大于20kOe。