公开(公告)号：US20130106889A1

公开(公告)日：2013-05-02

申请号：US13615395

申请日：2012-09-13

申请人： Hee Jin LEE ,  Young Gwan KIM ,  You Sub JUNG ,  Jong-Hun HAN

发明人： Hee Jin LEE ,  Young Gwan KIM ,  You Sub JUNG ,  Jong-Hun HAN

IPC分类号： G09G5/00

CPC分类号： G06T1/60 ,  G06T15/005 ,  G06T15/04

摘要： A graphics processing method and devices using the same is provided. The method includes receiving a plurality of texels arranged in a tiled format and rearranging, by a graphics processing unit (GPU), texels into a sequential format. In a tiled format, texels may be arranged in tiles, at least one tile including M×N texels. In the sequential format, the texels may be arranged in a scan line order of a display.

摘要翻译： 提供图形处理方法和使用其的装置。 该方法包括接收以平铺格式排列的多个纹素，并由图形处理单元（GPU）重新排列，将其细分为顺序格式。 在平铺格式中，纹理可以被布置在瓦片中，至少一个瓦片包括M×N个纹素。 在顺序格式中，纹理可以以显示器的扫描线顺序排列。

公开(公告)号：US20120073095A1

公开(公告)日：2012-03-29

申请号：US12949547

申请日：2010-11-18

申请人： Young Gwan Kim

发明人： Young Gwan Kim

IPC分类号： F16B45/04

CPC分类号： A01K75/00 ,  F16B45/02 ,  Y10T24/45199 ,  Y10T24/45204 ,  Y10T24/45236 ,  Y10T24/45251 ,  Y10T24/45257 ,  Y10T24/45262 ,  Y10T24/45272 ,  Y10T24/45319 ,  Y10T24/45325 ,  Y10T24/45346 ,  Y10T24/45398

摘要： A snap ring for fishing implements is provided. The snap ring includes a hook-like body having an opening on a portion thereof, a rotary shaft coupled on one side to a portion of the body such that the rotary shaft is rotatable around the opening, a hollow guide into which the rotary shaft is fitted and slides along, and a guide spring provided between the rotary shaft and the guide to elastically support the guide against the rotary shaft.

摘要翻译： 提供钓鱼器具的卡环。 卡环包括在其一部分上具有开口的钩状体，旋转轴，其一侧耦合到主体的一部分，使得旋转轴可围绕开口旋转，中空导向件，旋转轴 以及设置在旋转轴和引导件之间的引导弹簧，以将引导件弹性地支撑在旋转轴上。

公开(公告)号：US06679623B2

公开(公告)日：2004-01-20

申请号：US10091413

申请日：2002-03-05

申请人： Young-Gwan Kim

发明人： Young-Gwan Kim

IPC分类号： B01F722

CPC分类号： E02D3/12 ,  B01F2013/1052

摘要： Disclosed is an apparatus for agitating a liquid hardener used for improving soft ground. The apparatus comprises a storage tank section formed with an introduction part and having storage tanks in which mixing impellers are arranged, and transparent indicator tubes which are communicated with the storage tanks each; an agitation tank section positioned underneath the storage tank section and having agitation tanks, supply valves which are installed on the agitation tanks, and agitation impellers which are respectively arranged in the agitation tanks; a liquid mixture supply section having connection pipes which are connected to the storage tanks, a supply pipe which is connected to the connection pipes, and distribution pipes which are connected to the supply pipe; and a cleaning water tank section positioned in front of the agitation tank section and having a plurality of cleaning water tanks.

摘要翻译： 公开了用于搅拌用于改善软土的液体硬化剂的装置。 该装置包括形成有引入部分并具有其中布置有混合叶轮的储罐的储罐部分和与各储罐连通的透明指示器管; 位于储罐部分下方并具有搅拌槽，安装在搅拌槽上的供应阀和分别布置在搅拌槽中的搅拌叶轮的搅拌槽部分; 具有与储罐连接的连接管的液体混合物供给部，与连接管连接的供给管和与供给管连接的分配管; 以及位于搅拌槽部前方并具有多个清洗水箱的清洗水箱部。

公开(公告)号：US06528371B2

公开(公告)日：2003-03-04

申请号：US09732935

申请日：2000-12-11

申请人： Young Gwan Kim

发明人： Young Gwan Kim

IPC分类号： H01L21336

CPC分类号： H01L21/823842

摘要： A method for fabricating a semiconductor device in which channel resistance is prevented from occurring due to impurity ion diffusion and gate resistance is reduced, thereby improving the speed characteristic of the device. The method for forming a dual gate of a semiconductor device includes the steps of forming a polysilicon layer on a semiconductor substrate; selectively forming an impurity ion layer of a first conductive type and an impurity ion layer of a second conductive type on a lower surface to the polysilicon layer; polishing the polysilicon layer; forming a low resistance metal layer on the polished polysilicon layer; forming a first gate electrode and a second gate electrode by an etching process using a gate mask; and forming source/drain regions of the first conductive type in the substrate at both sides of the first gate electrode and source/drain regions of the second conductive type in the substrate at both sides of the second gate electrode.

摘要翻译： 制造半导体器件的方法，其中防止由杂质离子扩散和栅极电阻引起的沟道电阻发生，从而提高器件的速度特性。 形成半导体器件的双栅极的方法包括以下步骤：在半导体衬底上形成多晶硅层; 在下表面上选择性地形成第一导电类型的杂质离子层和第二导电类型的杂质离子层到多晶硅层; 抛光多晶硅层; 在抛光的多晶硅层上形成低电阻金属层; 通过使用栅极掩模的蚀刻工艺形成第一栅电极和第二栅电极; 以及在所述第二栅电极的两侧的所述基板中的所述第一栅极电极和所述第二导电型源极/漏极区域的两侧，在所述基板中形成所述第一导电类型的源极/漏极区域。

公开(公告)号：US20140068878A1

公开(公告)日：2014-03-13

申请号：US13610207

申请日：2012-09-11

申请人： Yong-Joo Chon ,  Doo Young Kim ,  Young Gwan Kim

发明人： Yong-Joo Chon ,  Doo Young Kim ,  Young Gwan Kim

IPC分类号： A43D1/00

CPC分类号： A43D8/26 ,  A43B13/38 ,  A43D1/00 ,  A43D8/22 ,  A43D111/00 ,  A43D111/006 ,  A43D2200/50 ,  A43D2200/60

摘要： A machine moves shoe strobels to a camera or scanner where images of the strobels are captured. Using the images, a computing device instructs a printer how to mark guidelines on the strobels that signify one or more strobel sewing lines for different shoes models and shoe sizes. Cross-sectional lines may also be printed on the strobels to aid in error-checking guideline marking. Unmarked strobels are stacked in a loading compartment, sometimes in pairs—e.g., right and left shoe strobels. The unmarked strobels are transferred to a conveyor that brings the strobels to the camera or scanner and the printer. After guidelines and/or cross-sectional lines are added to the strobels, the marked strobels are stacked in a compartments housing other marked strobels.

摘要翻译： 机器将鞋带移动到摄像机或扫描仪，其中捕获闪光灯的图像。 使用图像，计算设备指示打印机如何标记针对不同鞋子模型和鞋子尺寸的一条或多条频道缝合线条的条纹。 横截面线也可以打印在偏光片上，以帮助错误检查指南标记。 未标记的频闪器件有时成对地堆叠在加载隔间中，例如左右滑靴。 未标记的闪光灯被转移到将闪光灯带到相机或扫描仪和打印机的传送带上。 在将指南和/或横截面线添加到闪光灯之后，标记的闪光灯被堆叠在容纳其它标记的闪光灯的隔间中。

公开(公告)号：US5994200A

公开(公告)日：1999-11-30

申请号：US898574

申请日：1997-07-22

申请人： Young-Gwan Kim

发明人： Young-Gwan Kim

IPC分类号： H01L21/76 ,  H01L21/316 ,  H01L21/318 ,  H01L21/762

CPC分类号： H01L21/76224 ,  H01L21/76205 ,  H01L21/76213 ,  Y10S148/05

摘要： A semiconductor device isolation structure includes a trench formed in a substrate vertically from the major surface of the substrate, a trench plug for filling the trench, and a buried insulation region formed under the trench adjacent thereto, and a method of the same includes the steps of forming a trench in a substrate and vertically from the major surface of the substrate, selectively implanting oxide ions under the trench of the substrate, and forming a trench plug so as to fill the trench.

摘要翻译： 半导体器件隔离结构包括：从衬底的主表面垂直地形成在衬底中的沟槽，用于填充沟槽的沟槽塞，以及形成在与其相邻的沟槽下方的掩埋绝缘区域，并且其方法包括步骤 在衬底中形成沟槽并从衬底的主表面垂直地选择性地将氧化物离子注入到衬底的沟槽之下，并形成沟槽以填充沟槽。

公开(公告)号：US08849549B2

公开(公告)日：2014-09-30

申请号：US13542503

申请日：2012-07-05

申请人： Jaemin Jin ,  Kootae Kang ,  Insoo Jung ,  Seungeun Yu ,  Young Gwan Kim ,  Jin Woo Lee

发明人： Jaemin Jin ,  Kootae Kang ,  Insoo Jung ,  Seungeun Yu ,  Young Gwan Kim ,  Jin Woo Lee

IPC分类号： F02D35/02 ,  G01M15/12

CPC分类号： F02D35/028 ,  F02D35/026 ,  F02D41/1498 ,  F02D2041/286 ,  F02D2041/288 ,  F02D2200/025 ,  G01M15/12

摘要： A method of controlling combustion of a diesel engine may include a vibration measuring step of measuring engine vibrations, a measurement region setting step of setting a range where an LPP (location of peak pressure) is predicted from measured vibration data, a frequency transforming step of transforming a vibration signal to a frequency response function, a frequency integrating step of integrating the transformed frequency response function, an LPP detecting step of selecting a location of peak pressure from integrated frequency response function, an estimated value determining step of selecting LPP offset and SOC (start of combustion) offset by using the detected LPP, an error determining step of determining LPP value error and SOC value error by comparing the estimated LPP value and the estimated SOC value with a target LPP value and a target SOC value, and a combustion correcting step of correcting and controlling combustion by the determined errors.

摘要翻译： 控制柴油发动机的燃烧的方法可以包括测量发动机振动的振动测量步骤，测量区域设定步骤，其设定从测量的振动数据预测LPP（峰值压力的位置）的范围，频率变换步骤 将振动信号变换为频率响应函数，对变换后的频率响应函数进行积分的频率积分步骤，从积分频率响应函数中选择峰值压力位置的LPP检测步骤，选择LPP偏移和SOC的估计值确定步骤 （开始燃烧）通过使用检测到的LPP而偏移;误差确定步骤，通过将估计的LPP值和估计的SOC值与目标LPP值和目标SOC值进行比较来确定LPP值误差和SOC值误差，以及燃烧 通过确定的误差校正和控制燃烧的校正步骤。

公开(公告)号：USD478096S1

公开(公告)日：2003-08-05

申请号：US29156684

申请日：2002-03-05

申请人： Young-Gwan Kim

设计人： Young-Gwan Kim

公开(公告)号：US6127248A

公开(公告)日：2000-10-03

申请号：US114154

申请日：1998-07-13

申请人： Young-Gwan Kim

发明人： Young-Gwan Kim

IPC分类号： H01L29/78 ,  H01L21/265 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/423 ,  H01L21/425

CPC分类号： H01L21/28167 ,  H01L21/823462 ,  H01L29/42368 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/28176 ,  Y10S438/981

摘要： A fabrication method for a semiconductor device capable of adjusting a thickness of each portion of gate insulating film at both sides of a gate, which includes the steps of: providing a semiconductor substrate having a first region and a second region; forming a gate insulating film on the substrate; forming a conductive layer on the gate insulating film and patterning the conductive layer, for thereby forming a first gate and a second gate on the first and second regions, respectively; forming impurity areas in the first region at both sides of the first gate in order to reduce the velocity of oxidation; applying a re-oxidation process to the gate insulating film, for thereby forming each portion of the gate insulating film at both sides of the first gate thinner than each portion of the gate insulating film at both sides of the second gate; and respectively forming a source/drain region at both sides of the first and second gates.

摘要翻译： 一种半导体器件的制造方法，其能够调整栅极两侧的栅极绝缘膜的每个部分的厚度，其包括以下步骤：提供具有第一区域和第二区域的半导体衬底; 在基板上形成栅极绝缘膜; 在所述栅极绝缘膜上形成导电层并图案化所述导电层，从而分别在所述第一和第二区域上形成第一栅极和第二栅极; 在第一栅极两侧的第一区域形成杂质区域，以便降低氧化速度; 对所述栅极绝缘膜施加再氧化处理，从而在所述第一栅极的两侧形成所述栅极绝缘膜的每一部分比所述第二栅极两侧的所述栅极绝缘膜的每个部分薄; 并且分别在第一和第二栅极的两侧形成源极/漏极区域。

公开(公告)号：US6103562A

公开(公告)日：2000-08-15

申请号：US225314

申请日：1999-01-05

申请人： Jeong Hwan Son ,  Young Gwan Kim

发明人： Jeong Hwan Son ,  Young Gwan Kim

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092

CPC分类号： H01L21/823842 ,  Y10S438/919

摘要： Semiconductor device and method for fabricating the same, is disclosed, which can maintain a threshold voltage constant despite of decreased channel width, the device including a first, and a second conductive type wells in a substrate, a first, and a second gate insulating films on the first, and the second conductive type wells, a first gate electrode on the first gate insulating film, the first gate electrode being doped with a second conductive type except for edges of the first gate electrode in a channel width direction counter doped with a first conductive type, a second gate electrode on the second gate insulating film, the second gate electrode being doped with a first conductive type except for edges of the second gate electrode in a channel width direction counter doped with a second conductive type, and isolating regions formed between the first, and second conductive type wells, the first, and second gate insulating films, and the first, and second gate electrodes.

摘要翻译： 公开了半导体器件及其制造方法，即使沟道宽度减小，也可以保持阈值电压恒定，该器件包括衬底中的第一和第二导电型阱，第一栅极绝缘膜和第二栅极绝缘膜 在第一栅极绝缘膜上的第一栅电极和第二导电类型阱中的第一栅电极，第一栅电极掺杂有第二导电类型，除了第一栅电极的边缘在沟道宽度方向上掺杂有 第一导电类型，第二栅极绝缘膜上的第二栅电极，在掺杂有第二导电类型的沟道宽度方向上的第二栅电极的边缘以外掺杂第一导电类型的第二栅电极，以及隔离区 形成在第一和第二导电类型的阱，第一和第二栅极绝缘膜以及第一和第二栅电极之间。