公开(公告)号：US08877425B2

公开(公告)日：2014-11-04

申请号：US13880787

申请日：2011-10-20

申请人： Yuta Kanno ,  Makoto Nakajima ,  Tomoko Misaki ,  Motonobu Matsuyama ,  Masayuki Haraguchi

发明人： Yuta Kanno ,  Makoto Nakajima ,  Tomoko Misaki ,  Motonobu Matsuyama ,  Masayuki Haraguchi

IPC分类号： G03F7/09 ,  G03F7/20 ,  G03F7/30 ,  G03F7/36 ,  G03F7/40

CPC分类号： G03F7/091 ,  C08G77/14 ,  C08G77/26 ,  C09D183/06 ,  G03F7/0752 ,  G03F7/11 ,  H01L21/0271 ,  H01L21/3081 ,  C08L33/16 ,  C09D183/08

摘要： A resist underlayer film forming composition for lithography includes: as a component (I), a fluorine-containing highly branched polymer obtained by polymerizing a monomer A having two or more radical polymerizable double bonds in the molecule thereof, a monomer B having a fluoroalkyl group and at least one radical polymerizable double bond in the molecule thereof, and a monomer D having a silicon atom-containing organic group and at least one radical polymerizable double bond in the molecule thereof, in the presence of a polymerization initiator C in a content of 5% by mole or more and 200% by mole or less, based on the total mole of the monomer A, the monomer B, and the monomer D; and as a component (II), a hydrolyzable silane compound, a hydrolysis product thereof, a hydrolysis-condensation product thereof, or a silicon-containing compound that is a combination of these compounds.

摘要翻译： 用于光刻的抗蚀剂下层膜形成组合物包括：作为组分（I），通过在其分子中聚合具有两个或更多个可自由基聚合的双键的单体A获得的含氟高支化聚合物，具有氟烷基的单体B 和分子中的至少一个自由基聚合性双键，以及分子中具有含硅原子的有机基团和至少一个自由基聚合性双键的单体D，在聚合引发剂C的存在下， 相对于单体A，单体B和单体D的总摩尔数为5摩尔％以上且200摩尔％以下。 作为组分（II），可水解硅烷化合物，其水解产物，其水解缩合产物或这些化合物的组合的含硅化合物。

公开(公告)号：US20130224957A1

公开(公告)日：2013-08-29

申请号：US13880787

申请日：2011-10-20

申请人： Yuta Kanno ,  Makoto Nakajima ,  Tomoko Misaki ,  Motonobu Matsuyama ,  Masayuki Haraguchi

发明人： Yuta Kanno ,  Makoto Nakajima ,  Tomoko Misaki ,  Motonobu Matsuyama ,  Masayuki Haraguchi

IPC分类号： G03F7/09 ,  H01L21/308 ,  H01L21/027

CPC分类号： G03F7/091 ,  C08G77/14 ,  C08G77/26 ,  C09D183/06 ,  G03F7/0752 ,  G03F7/11 ,  H01L21/0271 ,  H01L21/3081 ,  C08L33/16 ,  C09D183/08

摘要： A resist underlayer film forming composition for lithography includes: as a component (I), a fluorine-containing highly branched polymer obtained by polymerizing a monomer A having two or more radical polymerizable double bonds in the molecule thereof, a monomer B having a fluoroalkyl group and at least one radical polymerizable double bond in the molecule thereof, and a monomer D having a silicon atom-containing organic group and at least one radical polymerizable double bond in the molecule thereof, in the presence of a polymerization initiator C in a content of 5% by mole or more and 200% by mole or less, based on the total mole of the monomer A, the monomer B, and the monomer D; and as a component (II), a hydrolyzable silane compound, a hydrolysis product thereof, a hydrolysis-condensation product thereof, or a silicon-containing compound that is a combination of these compounds.

摘要翻译： 用于光刻的抗蚀剂下层膜形成组合物包括：作为组分（I），通过在其分子中聚合具有两个或更多个可自由基聚合的双键的单体A获得的含氟高支化聚合物，具有氟烷基的单体B 和分子中的至少一个自由基聚合性双键，以及分子中具有含硅原子的有机基团和至少一个自由基聚合性双键的单体D，在聚合引发剂C的存在下， 相对于单体A，单体B和单体D的总摩尔数为5摩尔％以上且200摩尔％以下。 作为组分（II），可水解硅烷化合物，其水解产物，其水解缩合产物或这些化合物的组合的含硅化合物。

公开(公告)号：US09196484B2

公开(公告)日：2015-11-24

申请号：US13825158

申请日：2011-09-14

申请人： Satoshi Takeda ,  Makoto Nakajima ,  Yuta Kanno

发明人： Satoshi Takeda ,  Makoto Nakajima ,  Yuta Kanno

IPC分类号： H01L21/311 ,  H01L21/033 ,  G03F7/075 ,  G03F7/09 ,  C09D183/04 ,  C08G77/14 ,  C08G77/16

CPC分类号： H01L21/0332 ,  C08G77/14 ,  C08G77/16 ,  C09D183/04 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094

摘要： Described herein are compositions for forming an underlayer film for a solvent-developable resist. These compositions can include a hydrolyzable organosilane having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof and a solvent. The composition can form a resist underlayer film including, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof, the silicon atom in the silane compound having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group in a ratio of 0.1 to 40% by mol based on the total amount of silicon atoms. Also described is a method for applying the composition onto a semiconductor substrate and baking the composition to form a resist underlayer film.

摘要翻译： 本文描述了用于形成用于溶剂可显影抗蚀剂的下层膜的组合物。 这些组合物可以包括具有与含有保护的脂族醇基的有机基团键合的硅原子的水解性有机硅烷，可水解的有机硅烷的水解产物，可水解的有机硅烷的水解缩合产物，或其组合和溶剂。 该组合物可以形成抗蚀剂下层膜，该抗蚀剂下层膜包括可水解的有机硅烷，可水解的有机硅烷的水解产物，可水解的有机硅烷的水解缩合产物或其组合，硅烷化合物中硅原子与硅原子键合的硅原子 相对于硅原子总量，含有保护的脂族醇基的有机基团的比例为0.1〜40摩尔％。 还描述了将组合物施加到半导体衬底上并烘烤该组合物以形成抗蚀剂下层膜的方法。

公开(公告)号：US20120070994A1

公开(公告)日：2012-03-22

申请号：US13375517

申请日：2010-05-28

申请人： Yuta Kanno ,  Makoto Nakajima ,  Wataru Shibayama

发明人： Yuta Kanno ,  Makoto Nakajima ,  Wataru Shibayama

IPC分类号： H01L21/312 ,  C07F7/18 ,  B32B9/00 ,  C08K5/548

CPC分类号： G03F7/11 ,  G03F7/0752 ,  G03F7/091 ,  Y10T428/31663

摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask; and a forming method of a resist pattern using the underlayer film forming composition for lithography. A resist underlayer film forming composition for lithography comprising: as a silicon atom-containing compound, a hydrolyzable organosilane containing a sulfur atom-containing group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein in the whole silicon atom-containing compound, the ratio of a sulfur atom to a silicon atom is less than 5% by mole. The hydrolyzable organosilane is preferably a compound of Formula (1): [R1aSi(R2)3-a]bR3 wherein R3 has a partial structure of Formula (2): R4—S—R5.

摘要翻译： 提供了用于形成能够用作硬掩模的抗蚀剂下层膜的光刻用抗蚀剂下层膜形成组合物; 以及使用用于光刻的下层膜形成组合物的抗蚀剂图案的形成方法。 一种用于光刻的抗蚀剂下层膜形成组合物，包括：含硅原子的化合物，含有含硫原子的基团的可水解的有机硅烷，其水解产物或其水解缩合产物，其中在整个含硅原子的 化合物，硫原子与硅原子的比例小于5摩尔％。 可水解的有机硅烷优选为式（1）的化合物：[R a Si（R 2）3-a] b R 3，其中R 3具有式（2）的部分结构：R4-S-R5。

公开(公告)号：US09291900B2

公开(公告)日：2016-03-22

申请号：US13981142

申请日：2012-01-24

申请人： Yuta Kanno ,  Daisuke Sakuma ,  Makoto Nakajima

发明人： Yuta Kanno ,  Daisuke Sakuma ,  Makoto Nakajima

IPC分类号： G03F7/075 ,  G03F7/09 ,  G03F7/20 ,  G03F7/30 ,  G03F7/36 ,  G03F7/11 ,  C09D183/06 ,  C08L83/06 ,  H01L21/308 ,  C09D4/00 ,  C08G77/14

CPC分类号： G03F7/0752 ,  C08G77/14 ,  C08L83/06 ,  C09D4/00 ,  C09D183/06 ,  G03F7/0755 ,  G03F7/0757 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/36 ,  H01L21/3081 ,  H01L21/3088 ,  Y10T428/31663

摘要： A composition for forming a lithographic resist underlayer film, including, as a silane, a hydrolyzable organosilane, a hydrolysate thereof, or a hydrolytic condensate thereof, wherein the silane includes a hydrolyzable organosilane of Formula (1) below: [(R1)aSi(R2)(3-a)]b(R3)  Formula (1) [where R3 is a group of Formula (2), (3), or (4): (in Formulae (2), (3), and (4), at least one from among R4, R5, and R6 is a group bonded to a silicon atom directly or through a linking group.), R1 is an alkyl group, an aryl group, an aralkyl group, an alkyl halide group, an aryl halide group, an aralkyl halide group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, or a cyano group, or a combination thereof, R2 is an alkoxy group, an acyloxy group, or a halogen atom].

摘要翻译： 一种用于形成光刻抗蚀剂下层膜的组合物，其包含作为硅烷的可水解的有机硅烷，其水解物或其水解缩合物，其中所述硅烷包括下述式（1）的可水解的有机硅烷：[（R1）aSi（ R2）（3-a）] b（R3）式（1）[其中R3是式（2），（3）或（4）的基团：（在式（2），（3） 4）中，R4，R5和R6中的至少一个是直接或通过连接基与硅原子键合的基团。），R1是烷基，芳基，芳烷基，烷基卤基， 芳基卤基，芳烷基卤基，烯基或具有环氧基，丙烯酰基，甲基丙烯酰基，巯基，氨基或氰基的有机基团，或其组合，R 2 是烷氧基，酰氧基或卤素原子]。

公开(公告)号：US08835093B2

公开(公告)日：2014-09-16

申请号：US13133751

申请日：2009-12-16

申请人： Wataru Shibayama ,  Makoto Nakajima ,  Yuta Kanno

发明人： Wataru Shibayama ,  Makoto Nakajima ,  Yuta Kanno

IPC分类号： G03F7/004 ,  G03F7/11 ,  G03F7/075 ,  G03F7/09 ,  C08L83/04 ,  H01L21/308 ,  C09D183/04

CPC分类号： H01L21/3086 ,  C08L83/04 ,  C09D183/04 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/11

摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising a silane compound containing an anion group, wherein the silane compound containing an anion group is a hydrolyzable organosilane in which an organic group containing an anion group is bonded to a silicon atom and the anion group forms a salt structure, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The anion group may be a carboxylic acid anion, a phenolate anion, a sulfonic acid anion, or a phosphonic acid anion. The hydrolyzable organosilane may be a compound of Formula (1): R1aR2bSi(R3)4−(a+b) (1). A composition comprising a mixture of a hydrolyzable organosilane of Formula (1), and at least one organic silicon compound selected from the group consisting of a compound of Formula (2): R4aSi(R5)4−a (2) and a compound of Formula (3): [R6cSi(R7)3−c]2Yb (3); a hydrolysis product of the mixture; or a hydrolysis-condensation product of the mixture.

摘要翻译： 提供了用于形成能够用作硬掩模的抗蚀剂下层膜的光刻用抗蚀剂下层膜形成用组合物。 一种用于光刻的抗蚀剂下层膜形成组合物，其包含含有阴离子基团的硅烷化合物，其中含有阴离子基团的硅烷化合物是其中含有阴离子基团的有机基团与硅原子键合的可水解的有机硅烷，并且阴离子基团形成 盐结构，其水解产物或其水解缩合产物。 阴离子基团可以是羧酸阴离子，酚盐阴离子，磺酸阴离子或膦酸阴离子。 可水解的有机硅烷可以是式（1）的化合物：R1aR2bSi（R3）4-（a + b）（1）。 一种组合物，其包含式（1）的可水解有机硅烷和至少一种选自式（2）的化合物：R4aSi（R5）4-a（2）的化合物和 式（3）：[R6cSi（R7）3-c] 2Yb（3）; 该混合物的水解产物; 或该混合物的水解缩合产物。

公开(公告)号：US20130302991A1

公开(公告)日：2013-11-14

申请号：US13981142

申请日：2012-01-24

申请人： Yuta Kanno ,  Daisuke Sakuma ,  Makoto Nakajima

发明人： Yuta Kanno ,  Daisuke Sakuma ,  Makoto Nakajima

IPC分类号： H01L21/308

CPC分类号： G03F7/0752 ,  C08G77/14 ,  C08L83/06 ,  C09D4/00 ,  C09D183/06 ,  G03F7/0755 ,  G03F7/0757 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/36 ,  H01L21/3081 ,  H01L21/3088 ,  Y10T428/31663

摘要： A composition for forming a lithographic resist underlayer film, including, as a silane, a hydrolyzable organosilane, a hydrolysate thereof, or a hydrolytic condensate thereof, wherein the silane includes a hydrolyzable organosilane of Formula (1) below: [(R1)aSi(R2)(3-a)]b(R3)  Formula (1) [where R3 is a group of Formula (2), (3), or (4): (in Formulae (2), (3), and (4), at least one from among R4, R5, and R6 is a group bonded to a silicon atom directly or through a linking group.), R1 is an alkyl group, an aryl group, an aralkyl group, an alkyl halide group, an aryl halide group, an aralkyl halide group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, or a cyano group, or a combination thereof, R2 is an alkoxy group, an acyloxy group, or a halogen atom].

摘要翻译： 一种用于形成光刻抗蚀剂下层膜的组合物，其包含作为硅烷的可水解的有机硅烷，其水解物或其水解缩合物，其中所述硅烷包括下述式（1）的可水解的有机硅烷：[（R1）aSi（ R2）（3-a）] b（R3）式（1）[其中R3是式（2），（3）或（4）的基团：（在式（2），（3） 4）中，R4，R5和R6中的至少一个是直接或通过连接基与硅原子键合的基团。），R1是烷基，芳基，芳烷基，烷基卤基， 芳基卤基，芳烷基卤基，烯基或具有环氧基，丙烯酰基，甲基丙烯酰基，巯基，氨基或氰基的有机基团，或其组合，R 2 是烷氧基，酰氧基或卤素原子]。

公开(公告)号：US20110143149A1

公开(公告)日：2011-06-16

申请号：US13058109

申请日：2009-08-13

申请人： Wataru Shibayama ,  Makoto Nakajima ,  Yuta Kanno

发明人： Wataru Shibayama ,  Makoto Nakajima ,  Yuta Kanno

IPC分类号： B32B9/04 ,  C07F7/02 ,  C09D7/12 ,  H01L21/311

CPC分类号： G03F7/0755 ,  C08G77/26 ,  C09D5/006 ,  C09D183/08 ,  G03F7/0045 ,  G03F7/0757 ,  G03F7/095 ,  Y10T428/31663

摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask or a bottom anti-reflective coating, or a resist underlayer film causing no intermixing with a resist and having a dry etching rate higher than that of the resist. A film forming composition comprising a silane compound having an onium group, wherein the silane compound having an onium group is a hydrolyzable organosilane having, in a molecule thereof, an onium group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The composition uses as a resist underlayer film forming composition for lithography. A composition comprising a silane compound having an onium group, and a silane compound having no onium group, wherein the silane compound having an onium group exists in the whole silane compound at a ratio of less than 1% by mol, for example 0.01 to 0.95% by mol. The hydrolyzable organosilane may be a compound of Formula: R1aR2bSi(R3)4-(a+b). A resist underlayer film obtained by applying the composition as claimed in any one of claims 1 to 14 onto a semiconductor substrate and by baking the composition.

摘要翻译： 提供了用于形成抗蚀剂下层膜的光刻用抗蚀剂下层膜形成用组合物，能够用作硬掩模或底部抗反射涂层，或者不与抗蚀剂混合并具有干蚀刻速率的抗蚀剂下层膜 高于抗蚀剂。 一种包含具有鎓基的硅烷化合物的成膜组合物，其中具有鎓基的硅烷化合物是其分子中具有鎓基，其水解产物或其水解缩合产物的可水解的有机硅烷。 该组合物用作光刻的抗蚀剂下层膜形成组合物。 包含具有鎓基的硅烷化合物和不具有鎓基的硅烷化合物的组合物，其中具有鎓基的硅烷化合物以小于1摩尔％的比例存在于全部硅烷化合物中，例如0.01至0.95 ％摩尔。 可水解的有机硅烷可以是式：R1aR2bSi（R3）4-（a + b）的化合物。 14.一种抗蚀剂下层膜，其通过将权利要求1〜14中任一项所述的组合物涂布在半导体基板上，并烘烤该组合物而得到。

公开(公告)号：US09524871B2

公开(公告)日：2016-12-20

申请号：US14236136

申请日：2012-08-10

申请人： Makoto Nakajima ,  Daisuke Sakuma ,  Yuta Kanno ,  Takahiro Kishioka

发明人： Makoto Nakajima ,  Daisuke Sakuma ,  Yuta Kanno ,  Takahiro Kishioka

IPC分类号： H01L21/027 ,  G03F7/11 ,  C07F7/18 ,  G03F7/075 ,  G03F7/09 ,  H01L21/311

CPC分类号： H01L21/0274 ,  C07F7/1804 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0276 ,  H01L21/31133

摘要： A composition for forming a resist underlayer film for lithography, including: as a silane, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, or a hydrolysis-condensation product of the hydrolyzable organosilane, wherein the hydrolyzable organosilane is a compound of Formula (1): [(R1)aSi(R2)(3−a)]b(R3)  Formula (1) [in Formula (1), R3 is an organic group having a sulfonyl group and a light-absorbing group and is bonded to a Si atom through a Si—C bond; R1 is an alkyl, aryl, aralkyl, halogenated alkyl, halogenated aryl, halogenated aralkyl, alkenyl, an organic group having an epoxy, acryloyl, methacryloyl, mercapto, alkoxyaryl, acyloxyaryl, isocyanurate, hydroxy, cyclic amino, or a cyano group, or a combination of any of these groups and is bonded to a Si atom through a Si—C bond; R2 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 0 to 2; and b is an integer of 1 to 3].

公开(公告)号：US09023588B2

公开(公告)日：2015-05-05

申请号：US13580066

申请日：2011-02-18

申请人： Makoto Nakajima ,  Yuta Kanno ,  Wataru Shibayama

发明人： Makoto Nakajima ,  Yuta Kanno ,  Wataru Shibayama

IPC分类号： G03F7/075 ,  G03F7/09 ,  G03F7/26 ,  C07F7/18 ,  C09D183/08 ,  C08G77/388

CPC分类号： C07F7/1804 ,  C08G77/388 ,  C09D183/08 ,  G03F7/0751 ,  G03F7/094 ,  Y10T428/31663

摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography, includes as a silane compound, a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable organosilane is a hydrolyzable organosilane of Formula (1): R1aR2bSi(R3)4−(a+b)  Formula (1) wherein R1 is Formula (2): in which R4 is an organic group, and R5 is a C1-10 alkylene group, a hydroxyalkylene group, a sulfide bond, an ether bond, an ester bond, or a combination thereof, X1 is Formula (3), Formula (4), or Formula (5): R2 is an organic group, and R3 is a hydrolysable group.

摘要翻译： 提供了用于形成能够用作硬掩模的抗蚀剂下层膜的光刻用抗蚀剂下层膜形成用组合物。 用于光刻的抗蚀剂下层膜形成组合物包括硅烷化合物，可水解的有机硅烷，其水解产物或其水解缩合产物，其中可水解的有机硅烷是式（1）的可水解的有机硅烷：R1aR2bSi（R3） 4-（a + b）式（1）其中R1是式（2）：其中R4是有机基团，R5是C1-10亚烷基，羟基亚烷基，硫醚键，醚键， 酯键或其组合，X 1为式（3），式（4）或式（5）：R 2为有机基团，R 3为可水解基团。