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公开(公告)号:US20230409336A1
公开(公告)日:2023-12-21
申请号:US17843640
申请日:2022-06-17
Applicant: Advanced Micro Devices, Inc.
Inventor: Sriseshan Srikanth , Karthik Ramu Sangaiah , Anthony Thomas Gutierrez , Vedula Venkata Srikant Bharadwaj , John Kalamatianos
CPC classification number: G06F9/3853 , G06F9/3885 , G06F9/321
Abstract: In accordance with described techniques for VLIW Dynamic Communication, an instruction that causes dynamic communication of data to at least one processing element of a very long instruction word (VLIW) machine is dispatched to a plurality of processing elements of the VLIW machine. A first count of data communications issued by the plurality of processing elements and a second count of data communications served by the plurality of processing elements are maintained. At least one additional instruction is determined for dispatch to the plurality of processing elements of the VLIW machine based on the first count and the second count. For example, an instruction that is independent of the instruction is determined for dispatch while the first count and the second count are unequal, and an instruction that is dependent on the instruction is determined for dispatch based on the first count and the second count being equal.
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公开(公告)号:US20250004963A1
公开(公告)日:2025-01-02
申请号:US18217079
申请日:2023-06-30
Applicant: Advanced Micro Devices, Inc.
Inventor: William Peter Ehrett , Anthony Gutierrez , Vedula Venkata Srikant Bharadwaj , Karthik Ramu Sangaiah , Prachi Shukla , Sriseshan Srikanth , Ganesh Dasika , John Kalamatianos
IPC: G06F13/36
Abstract: A semiconductor device, referred to herein as a Globally Interconnected Operations (GIO) layer, provides global operations in the form of global data reduction for one or more PE arrays. The GIO layer includes processing elements that perform global data reduction on processing results from one or more PE arrays. The GIO layer includes connectors that allow it to be arranged in a 3D stack with one or more PE arrays, for example, on top of or beneath a PE array. This allows reduction operations to be implemented across PE arrays using an efficient topology with superior flexibility, scalability, latency and/or power characteristics that is customizable for particular use cases at assembly time, without requiring costly and time-consuming redesign of PE arrays, and without being constrained by particular PE array designs.
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公开(公告)号:US20230420036A1
公开(公告)日:2023-12-28
申请号:US18240770
申请日:2023-08-31
Applicant: Advanced Micro Devices, Inc.
Inventor: Sriseshan Srikanth , Vignesh Adhinarayanan , Jagadish B. Kotra , Sergey Blagodurov
IPC: G11C11/4093 , G11C8/18 , H03K19/17728 , G11C11/4096 , H03K19/173 , G11C11/408
CPC classification number: G11C11/4093 , G11C8/18 , H03K19/17728 , G11C11/4096 , H03K19/1737 , G11C11/4087
Abstract: A fine-grained dynamic random-access memory (DRAM) includes a first memory bank, a second memory bank, and a dual mode I/O circuit. The first memory bank includes a memory array divided into a plurality of grains, each grain including a row buffer and input/output (I/O) circuitry. The dual-mode I/O circuit is coupled to the I/O circuitry of each grain in the first memory bank, and operates in a first mode in which commands having a first data width are routed to and fulfilled individually at each grain, and a second mode in which commands having a second data width different from the first data width are fulfilled by at least two of the grains in parallel.
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公开(公告)号:US20230306256A1
公开(公告)日:2023-09-28
申请号:US17705066
申请日:2022-03-25
Applicant: Advanced Micro Devices, Inc.
Inventor: Sriseshan Srikanth , SeyedMohammad SeyedzadehDelcheh
Abstract: Systems, apparatuses, and methods for scattering floating point values to heterogeneous memory devices are disclosed. An inference engine performs floating point calculations during pre-training and during post-training operations. A scatter unit stores the floating point number values in multiple memories with different error correction capabilities. A first portion of each floating point number value is stored in a first memory having a relatively high error correction capability, and a second portion of each floating point number value is stored in a second memory with a relatively low error correction capability. In one scenario, the first portion includes the sign and exponent fields, while the second portion includes the mantissa field. The resiliency of the inference engine to overcome small errors allows for convergence to the final result in spite of any errors in the retrieved second portion.
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公开(公告)号:US11756606B2
公开(公告)日:2023-09-12
申请号:US17549359
申请日:2021-12-13
Applicant: Advanced Micro Devices, Inc.
Inventor: Sriseshan Srikanth , Vignesh Adhinarayanan , Jagadish B. Kotra , Sergey Blagodurov
IPC: G11C11/4093 , G11C11/4096 , H03K19/17728 , G11C8/18 , H03K19/173 , G11C11/408
CPC classification number: G11C11/4093 , G11C8/18 , G11C11/4087 , G11C11/4096 , H03K19/1737 , H03K19/17728
Abstract: A fine-grained dynamic random-access memory (DRAM) includes a first memory bank, a second memory bank, and a dual mode I/O circuit. The first memory bank includes a memory array divided into a plurality of grains, each grain including a row buffer and input/output (I/O) circuitry. The dual-mode I/O circuit is coupled to the I/O circuitry of each grain in the first memory bank, and operates in a first mode in which commands having a first data width are routed to and fulfilled individually at each grain, and a second mode in which commands having a second data width different from the first data width are fulfilled by at least two of the grains in parallel.
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公开(公告)号:US20230186976A1
公开(公告)日:2023-06-15
申请号:US17549359
申请日:2021-12-13
Applicant: Advanced Micro Devices, Inc.
Inventor: Sriseshan Srikanth , Vignesh Adhinarayanan , Jagadish B. Kotra , Sergey Blagodurov
IPC: G11C11/4093 , G11C11/4096 , G11C11/408 , G11C8/18 , H03K19/173 , H03K19/17728
CPC classification number: G11C11/4093 , G11C11/4096 , G11C11/4087 , G11C8/18 , H03K19/1737 , H03K19/17728
Abstract: A fine-grained dynamic random-access memory (DRAM) includes a first memory bank, a second memory bank, and a dual mode I/O circuit. The first memory bank includes a memory array divided into a plurality of grains, each grain including a row buffer and input/output (I/O) circuitry. The dual-mode I/O circuit is coupled to the I/O circuitry of each grain in the first memory bank, and operates in a first mode in which commands having a first data width are routed to and fulfilled individually at each grain, and a second mode in which commands having a second data width different from the first data width are fulfilled by at least two of the grains in parallel.
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公开(公告)号:US20230128916A1
公开(公告)日:2023-04-27
申请号:US17511777
申请日:2021-10-27
Applicant: ADVANCED MICRO DEVICES, INC.
Inventor: Sriseshan Srikanth , SeyedMohammad SeyedzadehDelcheh
Abstract: A processing system performs error detection at each of a plurality of layers of a neural network, such as a neural network implemented at a computational analog memory. By performing error detection at the layer level, the processing system is able to account for write errors when updating neural network weights, without waiting for backpropagation based on an output of the neural network. The processing system thereby reduces the amount of time needed to train the network, both by reducing the number of training epochs, and by reducing the length of the individual training epochs.
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公开(公告)号:US12026387B2
公开(公告)日:2024-07-02
申请号:US17703491
申请日:2022-03-24
Applicant: Advanced Micro Devices, Inc.
Inventor: Seyedmohammad SeyedzadehDelcheh , Sriseshan Srikanth
IPC: G06F3/06
CPC classification number: G06F3/0644 , G06F3/0604 , G06F3/0673
Abstract: A page swapping memory protection system tracks accesses to physical memory pages, such as in a table with each row storing a physical memory page address and a counter value. This counter value records the number of accesses (e.g., read access or write accesses) to the corresponding physical memory page. In response to one of the counters exceeding a threshold value, the corresponding physical memory page is swapped with another page in physical memory (e.g., a page the table indicates has a smallest number of accesses). According, unreliability in the physical memory introduced due to frequent accesses to a particular physical memory page is mitigated.
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公开(公告)号:US20230315320A1
公开(公告)日:2023-10-05
申请号:US17703491
申请日:2022-03-24
Applicant: Advanced Micro Devices, Inc.
Inventor: SeyedMohammad SeyedzadehDelcheh , Sriseshan Srikanth
IPC: G06F3/06
CPC classification number: G06F3/0644 , G06F3/0604 , G06F3/0673
Abstract: A page swapping memory protection system tracks accesses to physical memory pages, such as in a table with each row storing a physical memory page address and a counter value. This counter value records the number of accesses (e.g., read access or write accesses) to the corresponding physical memory page. In response to one of the counters exceeding a threshold value, the corresponding physical memory page is swapped with another page in physical memory (e.g., a page the table indicates has a smallest number of accesses). According, unreliability in the physical memory introduced due to frequent accesses to a particular physical memory page is mitigated.
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公开(公告)号:US20230102690A1
公开(公告)日:2023-03-30
申请号:US17490909
申请日:2021-09-30
Applicant: Advanced Micro Devices, Inc.
Inventor: Sriseshan Srikanth , Vignesh Adhinarayanan
IPC: G06F3/06
Abstract: A method includes, in response to receiving a command from a processing device, reading original data from a set of one or more memory devices based on an address range specified in the command, and transmitting a subset of the original data to the processing device, where the subset includes fewer zero values than the original data.
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