公开(公告)号：US12094853B2

公开(公告)日：2024-09-17

申请号：US17963729

申请日：2022-10-11

申请人： ADVANCED MICRO DEVICES, INC. ,  ATI TECHNOLOGIES ULC

发明人： Bryan Black ,  Michael Z. Su ,  Gamal Refai-Ahmed ,  Joe Siegel ,  Seth Prejean

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L25/065

CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/03 ,  H01L24/11 ,  H01L2224/0233 ,  H01L2224/02331 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05095 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05169 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/17181 ,  H01L2225/06548 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/14 ,  H01L2924/00

摘要： A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.

公开(公告)号：US11469212B2

公开(公告)日：2022-10-11

申请号：US15247259

申请日：2016-08-25

申请人： ADVANCED MICRO DEVICES, INC. ,  ATI TECHNOLOGIES ULC

发明人： Bryan Black ,  Michael Z. Su ,  Gamal Refai-Ahmed ,  Joe Siegel ,  Seth Prejean

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L25/065 ,  H01L23/00

摘要： A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.