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    Semiconductor device package and method of manufacturing the same
    2.
    发明授权
    Semiconductor device package and method of manufacturing the same 有权

    公开(公告)号：US11329017B2

    公开(公告)日：2022-05-10

    申请号：US16862455

    申请日：2020-04-29

    Applicant: Advanced Semiconductor Engineering, Inc.

    Inventor： Wei-Tung Chang ,  Cheng-Nan Lin

    IPC: H01L23/66 ,  H01Q1/22 ,  H01L23/48

    Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes a first electronic component having an active surface and a backside surface opposite to the active surface and a first antenna layer disposed on the backside surface of the first electronic component. The semiconductor device package further includes a first dielectric layer covering the first antenna layer and a second antenna layer disposed over the first antenna layer. The second antenna layer is spaced apart from the first antenna layer by the first dielectric layer. A method of manufacturing a semiconductor device package is also disclosed.

    Electronic device package and method for manufacturing the same
    4.
    发明授权
    Electronic device package and method for manufacturing the same 有权

    公开(公告)号：US11152315B2

    公开(公告)日：2021-10-19

    申请号：US16653644

    申请日：2019-10-15

    Applicant: Advanced Semiconductor Engineering, Inc.

    Inventor： Wei-Tung Chang ,  Cheng-Nan Lin

    IPC: H01L23/66 ,  H01L23/31 ,  H01L23/29 ,  H01L23/498

    Abstract: An electronic device package includes a first conductive substrate, a second conductive substrate and a dielectric layer. The first conductive substrate has a first coefficient of thermal expansion (CTE). The second conductive substrate is disposed on an upper surface of the first conductive substrate and electrically connected to the first conductive substrate. The second conductive substrate has a second CTE. The dielectric layer is disposed on the upper surface of the first conductive substrate and disposed on at least one sidewall of the second conductive substrate. The dielectric layer has a third CTE. A difference between the first CTE and the second CTE is larger than a difference between the first CTE and the third CTE.

    Semiconductor device package and method of manufacturing the same
    5.
    发明授权
    Semiconductor device package and method of manufacturing the same 有权

    公开(公告)号：US10431554B2

    公开(公告)日：2019-10-01

    申请号：US15871805

    申请日：2018-01-15

    Applicant: Advanced Semiconductor Engineering, Inc.

    Inventor： I-Chia Lin ,  Chieh-Chen Fu ,  Kuo Hsien Liao ,  Cheng-Nan Lin

    IPC: H01L23/552 ,  H01L23/00 ,  H01L21/56

    Abstract: A semiconductor device package includes: (1) a carrier; (2) an electronic component disposed over a top surface of the carrier; (3) a package body disposed over the top surface of the carrier and covering the electronic component; and (4) a shield layer, including a first magnetically permeable layer disposed over the package body, a first electrically conductive layer disposed over the first magnetically permeable layer, and a second magnetically permeable layer disposed over the first electrically conductive layer. The first electrically conductive layer is interposed between the first magnetically permeable layer and the second magnetically permeable layer. A permeability of the first electrically conductive layer is different from a permeability of the first magnetically permeable layer and a permeability of the second magnetically permeable layer.

    SEMICONDUCTOR PACKAGE DEVICE AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    SEMICONDUCTOR PACKAGE DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体封装器件及其制造方法

    公开(公告)号：US20170077039A1

    公开(公告)日：2017-03-16

    申请号：US15175992

    申请日：2016-06-07

    Applicant: Advanced Semiconductor Engineering, Inc.

    Inventor： Kuo-Hsien Liao ,  Cheng-Nan Lin ,  Chieh-Chen Fu

    IPC: H01L23/552 ,  H01L21/56 ,  H01L23/31 ,  H01L21/48 ,  H01L23/498 ,  H01L23/66

    Abstract: The present disclosure provides a semiconductor package device and a method for manufacturing the same. In embodiments of the present disclosure, a semiconductor package device includes a carrier, a first antenna, a second antenna, a package body and a first shield. The carrier includes an antenna area and a component area. The first antenna is formed on the antenna area. The second antenna extends from the antenna area and over the first antenna. The second antenna is electrically connected to the first antenna. The package body includes a first portion covering the component area and a second portion covering the antenna area. The first shield is conformally formed on the first portion of the package body and exposes the second portion of package body.

    Abstract translation: 本公开提供一种半导体封装器件及其制造方法。 在本公开的实施例中，半导体封装器件包括载体，第一天线，第二天线，封装主体和第一屏蔽。 载体包括天线区域和组件区域。 第一天线形成在天线区域上。 第二天线从天线区域和第一天线延伸。 第二天线电连接到第一天线。 封装主体包括覆盖部件区域的第一部分和覆盖天线区域的第二部分。 第一屏蔽保形地形成在封装主体的第一部分上并使封装体的第二部分露出。

    Semiconductor device package and method of manufacturing the same
    9.
    发明授权
    Semiconductor device package and method of manufacturing the same 有权

    公开(公告)号：US10950530B2

    公开(公告)日：2021-03-16

    申请号：US16416043

    申请日：2019-05-17

    Applicant: Advanced Semiconductor Engineering, Inc.

    Inventor： Cheng-Nan Lin ,  Jen-Chieh Kao

    IPC: H01L21/48 ,  H01L23/498 ,  H01L23/66 ,  H01Q1/22

    Abstract: A semiconductor device package includes a first substrate, a second substrate, a first support element, a second support element and an electronic component. The first substrate has a first surface and a second surface opposite to the first surface. The first substrate has a conductive pad adjacent to the first surface of the first substrate. The second substrate is disposed over the first surface of the first substrate. The first support element is disposed between the first substrate and the second substrate. The first support element is disposed adjacent to an edge of the first surface of the first substrate. The second support element is disposed between the first substrate and the second substrate. The second support element is disposed far away from the edge of the first surface of the first substrate. The electronic component is disposed on the second surface of the first substrate. A projection line of a contact point between the second support element and the conductive pad on the second surface of the first substrate is physically spaced apart from a projection line of a lateral surface of the electronic component on the second surface of the first substrate.

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