PHOTOVOLTAIC DEVICE WITH BACK SIDE CONTACTS
    1.
    发明申请
    PHOTOVOLTAIC DEVICE WITH BACK SIDE CONTACTS 审中-公开
    具有背面接触的光电器件

    公开(公告)号:US20150243815A1

    公开(公告)日:2015-08-27

    申请号:US14706704

    申请日:2015-05-07

    摘要: Methods and apparatus for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells are provided. A photovoltaic (PV) device generally includes a window layer; an absorber layer disposed below the window layer such that electrons are generated when photons travel through the window layer and are absorbed by the absorber layer; and a plurality of contacts for external connection coupled to the absorber layer, such that all of the contacts for external connection are disposed below the absorber layer and do not block any of the photons from reaching the absorber layer through the window layer. Locating all the contacts on the back side of the PV device avoids solar shadows caused by front side contacts, typically found in conventional solar cells. Therefore, PV devices described herein with back side contacts may allow for increased efficiency when compared to conventional solar cells.

    摘要翻译: 提供了与常规太阳能电池相比,用于将电磁辐射如太阳能转换成电能的方法和装置,其效率提高。 光伏(PV)装置通常包括窗口层; 设置在窗口层下方的吸收层,使得当光子穿过窗口层并被吸收层吸收时,产生电子; 以及多个用于连接到吸收层的外部连接的触点,使得用于外部连接的所有触点都设置在吸收层下方,并且不阻挡任何光子通过窗口层到达吸收层。 定位PV装置背面的所有触点避免了由常规太阳能电池中常见的前侧触点造成的太阳阴影。 因此,与传统的太阳能电池相比,具有背面接触的本文描述的PV器件可以提高效率。

    PHOTOVOLTAIC DEVICE
    2.
    发明申请
    PHOTOVOLTAIC DEVICE 审中-公开
    光电器件

    公开(公告)号:US20130153013A1

    公开(公告)日:2013-06-20

    申请号:US13772043

    申请日:2013-02-20

    IPC分类号: H01L31/0304

    摘要: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. One embodiment of the present invention provides a photovoltaic (PV) device. The PV device comprises an absorber layer made of a compound semiconductor; and an emitter layer located closer than the absorber layer to a first side of the device. The PV device includes a p-n junction formed between the emitter layer and the absorber layer, the p-n junction causing a voltage to be generated in the device in response to the device being exposed to light at a second side of the device. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

    摘要翻译: 提供了与常规太阳能电池相比,用于将诸如太阳能的电磁辐射转换成电能的方法和装置,其效率提高。 本发明的一个实施例提供一种光伏(PV)装置。 PV器件包括由化合物半导体制成的吸收层; 以及位于比该吸收层更靠近器件第一侧的发射极层。 PV器件包括形成在发射极层和吸收层之间的p-n结,p-n结响应于器件在器件的第二侧被曝光而在器件中产生电压。 与常规太阳能电池相比,这样的创新可以允许PV装置的更高的效率和灵活性。

    PHOTOVOLTAIC DEVICE
    3.
    发明申请
    PHOTOVOLTAIC DEVICE 审中-公开

    公开(公告)号:US20190259888A1

    公开(公告)日:2019-08-22

    申请号:US16404602

    申请日:2019-05-06

    摘要: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. One embodiment of the present invention provides a photovoltaic (PV) device. The PV device comprises an absorber layer made of a compound semiconductor; and an emitter layer located closer than the absorber layer to a first side of the device. The PV device includes a p-n junction formed between the emitter layer and the absorber layer, the p-n junction causing a voltage to be generated in the device in response to the device being exposed to light at a second side of the device. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

    OPTOELECTRONIC DEVICE WITH DIELECTRIC LAYER AND METHOD OF MANUFACTURE
    4.
    发明申请
    OPTOELECTRONIC DEVICE WITH DIELECTRIC LAYER AND METHOD OF MANUFACTURE 审中-公开
    具有介质层的光电装置及其制造方法

    公开(公告)号:US20150380576A1

    公开(公告)日:2015-12-31

    申请号:US14846675

    申请日:2015-09-04

    摘要: An optoelectronic device and a method for fabricating the optoelectronic device are disclosed. The optoelectronic device comprises a p-n structure, a patterned dielectric layer comprising a dielectric material and a metal layer disposed on the dielectric layer. The metal layer makes one or more contact to the p-n structure through the patterned dielectric layer. The dielectric material may be chemically resistant to acids and may provide adhesion to the p-n structure and the metal layer. The method for fabricating an optoelectronic device comprises providing a p-n structure, providing a dielectric layer on the p-n structure and providing a metal layer on the dielectric layer and then lifting the device off the substrate, such that after the lift off the p-n structure is closer than the patterned dielectric layer to a front side of the device; wherein the device comprises the p-n structure, the patterned dielectric layer, and the metal layer.

    摘要翻译: 公开了一种光电器件及其制造方法。 光电子器件包括p-n结构,包含电介质材料的图案化电介质层和设置在电介质层上的金属层。 金属层通过图案化的介电层与p-n结构形成一个或多个接触。 电介质材料可以对酸具有化学抗性,并且可以提供对p-n结构和金属层的粘附。 制造光电器件的方法包括提供pn结构,在pn结构上提供电介质层,并在电介质层上提供金属层,然后将器件从衬底上提起,使得在pn结构的剥离更接近 比图案化的电介质层到器件的前侧; 其中该器件包括p-n结构,图案化电介质层和金属层。

    EPITAXIAL LIFT OFF SYSTEMS AND METHODS
    5.
    发明申请
    EPITAXIAL LIFT OFF SYSTEMS AND METHODS 有权
    外延提升系统和方法

    公开(公告)号:US20140251547A1

    公开(公告)日:2014-09-11

    申请号:US14281386

    申请日:2014-05-19

    IPC分类号: B32B43/00

    摘要: Epitaxial lift off systems and methods are presented. In one embodiment a tape is disposed on the opposite side of the epitaxial material than the substrate is used to hold the epitaxial material during the etching and removal steps of the ELO process. In various embodiments, the apparatus for removing the ELO film from the substrates without damaging the ELO film may include an etchant reservoir, substrate handling and tape handling mechanisms, including mechanisms to manipulate (e.g., cause tension, peel, widen the etch gap, etc.) the lift off component during the lift off process.

    摘要翻译: 提出了外延提升系统和方法。 在一个实施例中,在ELO工艺的蚀刻和去除步骤期间,将带设置在外延材料的相对侧上,而不是衬底用于保持外延材料。 在各种实施例中,用于从衬底上移除ELO膜而不损坏ELO膜的设备可以包括蚀刻剂储存器,衬底处理和带处理机构,包括操作机构(例如引起张力,剥离,加宽蚀刻间隙等) )在剥离过程中脱离组件。