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公开(公告)号:US11380839B2
公开(公告)日:2022-07-05
申请号:US16865348
申请日:2020-05-02
申请人: ANTAIOS , Centre National de la Recherche Scientifique , Commissariat à l'Energie Atomique et aux Energies Alternatives
发明人: Witold Kula , Marc Drouard , Gilles Gaudin , Jean-Pierre Nozieres
摘要: A magnetic memory (MRAM) cell, comprising: a first layer formed from a substantially electrically conductive material; and a magnetic tunnel junction (MTJ) stack formed over the first layer, wherein the MTJ stack comprises: a ferromagnetic reference layer having an in-plane reference magnetization; a tunnel barrier layer; and a ferromagnetic storage layer between the tunnel barrier layer and the first layer, the storage layer having an in-plane storage magnetization; wherein the MTJ stack comprises an arrangement for providing an in-plane uniaxial anisotropy in the storage layer; wherein said in-plane uniaxial anisotropy makes an angle with the direction of the write current that is between 5° and 90°, and wherein said in-plane uniaxial anisotropy has an energy between 40 and 200 kBT and wherein coercivity is larger than 200 Oe.
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公开(公告)号:US10224085B2
公开(公告)日:2019-03-05
申请号:US15540159
申请日:2016-01-13
申请人: Centre National de la Recherche Scientifique , Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人: Gilles Gaudin , Ioan Mihai Miron , Olivier Boulle , Safeer Chenattukuz Hiyil , Jean-Pierre Nozieres
摘要: A memory slot including a pad formed of a stack of regions made of thin layers, including a first region made of a nonmagnetic conducting material; a second region made of a magnetic material exhibiting a magnetization in a direction perpendicular to the principal plane of the pad; a third region made of a nonmagnetic conducting material of different characteristics to those of the first region; the pad resting on a conducting track adapted to cause the flow of a programming current of chosen sense, in which the pad has an asymmetric shape with respect to any plane perpendicular to the plane of the layers and parallel to the central axis of the track, and with respect to its barycenter.
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公开(公告)号:US20170131910A1
公开(公告)日:2017-05-11
申请号:US15319453
申请日:2015-06-08
申请人: Commissariat à I'Énergie Atomique et aux Énergies Alternatives , Centre National de la Recherche Scientifique
CPC分类号: G06F3/065 , G06F3/0619 , G06F3/0685 , G06F13/4068 , G06F13/4282 , G11C7/065 , G11C7/12 , G11C13/004 , G11C13/0069 , G11C14/0054 , G11C14/0081 , G11C14/009 , G11C19/28 , Y02D10/14 , Y02D10/151
摘要: A register including: a plurality of volatile memory cells each having a first input and an output, the volatile memory cells being coupled in series with each other via their first inputs and outputs; a non-volatile memory comprising a plurality of non-volatile memory cells; and one or more serial connections adapted to perform at least one of: serially supply data to be written to the non-volatile memory from a last or another of the volatile memory cells to the non-volatile memory during a back-up operation of data stored by the volatile memory cells; and serially supply data read from the non-volatile memory to a first of the volatile memory cells during a restoration operation of the data stored by the volatile memory cells.
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公开(公告)号:US20180005677A1
公开(公告)日:2018-01-04
申请号:US15540159
申请日:2016-01-13
申请人: Centre National de la Recherche Scientifique , Commissariat à I'Énergie Atomique et aux Énergies Alternatives
发明人: Gilles Gaudin , Ioan Mihai Miron , Olivier Boulle , Safeer Chenattukuz Hiyil , Jean-Pierre Nozieres
CPC分类号: G11C11/161 , G11C11/16 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01L27/222 , H01L43/02 , H01L43/08 , H01L43/10
摘要: A memory slot including a pad formed of a stack of regions made of thin layers, including a first region made of a nonmagnetic conducting material; a second region made of a magnetic material exhibiting a magnetization in a direction perpendicular to the principal plane of the pad; a third region made of a nonmagnetic conducting material of different characteristics to those of the first region; the pad resting on a conducting track adapted to cause the flow of a programming current of chosen sense, in which the pad has an asymmetric shape with respect to any plane perpendicular to the plane of the layers and parallel to the central axis of the track, and with respect to its barycenter.
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