公开(公告)号：US20040079633A1

公开(公告)日：2004-04-29

申请号：US10686486

申请日：2003-10-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Robin Cheung ,  Ashok Sinha ,  Avi Tepman ,  Dan Carl

IPC: C25D017/00

CPC classification number: H01L21/67184 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/6708 ,  H01L21/67126 ,  H01L21/6723 ,  H01L21/67745 ,  H01L21/67766 ,  H01L21/68707 ,  H01L21/68721 ,  H01L21/68728

Abstract: The present invention generally provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, a rapid thermal anneal chamber disposed adjacent the loading station, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. One aspect of the invention provides a post electrochemical deposition treatment, such as a rapid thermal anneal treatment, for enhancing deposition results. Preferably, the electro-chemical deposition system includes a system controller adapted to control the electro-chemical deposition process and the components of the electro-chemical deposition system, including the rapid thermal anneal chamber disposed adjacent the loading station.

Abstract translation: 本发明通常提供一种电化学沉积系统，其被设计成具有可扩展以适应未来设计规则和间隙填充要求的柔性结构，并提供令人满意的吞吐量以满足其它处理系统的需求。 电化学沉积系统通常包括具有主机晶片传送机器人的主机，与主机连接设置的加载站，与加载站相邻设置的快速热退火室，与主机连接设置的一个或多个处理单元， 以及流体连接到所述一个或多个电处理单元的电解质供应。 本发明的一个方面提供了用于增强沉积结果的后电化学沉积处理，例如快速热退火处理。 优选地，电化学沉积系统包括适于控制电化学沉积过程和电化学沉积系统的部件的系统控制器，包括邻近加载站设置的快速热退火室。

公开(公告)号：US20040209465A1

公开(公告)日：2004-10-21

申请号：US10762764

申请日：2004-01-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Ming Xi ,  Ashok Sinha ,  Moris Kori ,  Alfred W. Mak ,  Xinliang Lu ,  Ken Kaung Lai ,  Karl A. Littau

IPC: H01L021/44

CPC classification number: C23C16/0272 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876

Abstract: A method and apparatus to form a refractory metal layer on a substrate features nucleating a substrate using sequential deposition techniques in which the substrate is serially exposed to first and second reactive gases followed by forming a layer, employing vapor deposition, to subject the nucleation layer to a bulk deposition of a compound contained in one of the first and second reactive gases.

Abstract translation: 在衬底上形成难熔金属层的方法和装置，其特征是使用顺序沉积技术使衬底成核，其中衬底连续地暴露于第一和第二反应气体，然后使用气相沉积形成层，使成核层 包含在第一和第二反应气体之一中的化合物的大量沉积。