公开(公告)号：US20030127043A1

公开(公告)日：2003-07-10

申请号：US10194629

申请日：2002-07-12

Applicant: Applied Materials, Inc.

Inventor： Xinliang Lu ,  Ping Jian ,  John Hyun Yoo ,  Ken Kaung Lai ,  Alfred W. Mak ,  Robert L. Jackson ,  Ming Xi

IPC: C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC classification number: H01L21/28562 ,  C23C16/14 ,  C23C16/45523 ,  C23C16/45525 ,  C30B25/02 ,  C30B29/02

Abstract: A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereafter, reaction by-products generated from the tungsten deposition are removed from the process chamber. After the reaction by-products are removed from the process chamber, a flow of the reducing gas is provided to the process chamber to react with residual tungsten-containing precursor remaining therein. Such a deposition process forms tungsten nucleation layers having good step coverage. The sequential deposition process of reacting pulses of the tungsten-containing precursor and the reducing gas, removing reaction by-products, and than providing a flow of the reducing gas to the process chamber may be repeated until a desired thickness for the tungsten nucleation layer is formed.

Abstract translation: 使用顺序沉积工艺形成钨成核层的方法。 钨成核层通过在处理室中使含钨前体和还原气体的脉冲反应而在基底上沉积钨而形成。 此后，从处理室除去从钨沉积产生的反应副产物。 在从处理室中除去反应副产物之后，将还原气体的流动提供给处理室以与其中剩余的含钨前体反应。 这种沉积工艺形成具有良好阶梯覆盖的钨成核层。 可以重复将含钨前体和还原气体的脉冲反应，除去反应副产物以及向处理室提供还原气体流的顺序沉积过程，直到钨成核层的期望厚度为 形成。

公开(公告)号：US20040209465A1

公开(公告)日：2004-10-21

申请号：US10762764

申请日：2004-01-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Ming Xi ,  Ashok Sinha ,  Moris Kori ,  Alfred W. Mak ,  Xinliang Lu ,  Ken Kaung Lai ,  Karl A. Littau

IPC: H01L021/44

CPC classification number: C23C16/0272 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876

Abstract: A method and apparatus to form a refractory metal layer on a substrate features nucleating a substrate using sequential deposition techniques in which the substrate is serially exposed to first and second reactive gases followed by forming a layer, employing vapor deposition, to subject the nucleation layer to a bulk deposition of a compound contained in one of the first and second reactive gases.

Abstract translation: 在衬底上形成难熔金属层的方法和装置，其特征是使用顺序沉积技术使衬底成核，其中衬底连续地暴露于第一和第二反应气体，然后使用气相沉积形成层，使成核层 包含在第一和第二反应气体之一中的化合物的大量沉积。

公开(公告)号：US20040013803A1

公开(公告)日：2004-01-22

申请号：US10321033

申请日：2002-12-16

Applicant: Applied Materials, Inc.

Inventor： Hua Chung ,  Hongbin Fang ,  Ken K. Lai ,  Jeong Soo Byun ,  Alfred W. Mak ,  Michael X. Yang ,  Ming Xi ,  Moris Kori ,  Xinliang Lu ,  Ping Jian

IPC: C23C016/34 ,  B32B009/00

CPC classification number: C23C16/34 ,  C23C16/45525

Abstract: Methods of depositing titanium nitride (TiN) films on a substrate are disclosed. The titanium nitride (TiN) films may be formed using a cyclical deposition process by alternately adsorbing a titanium-containing precursor and a NH3 gas on the substrate. The titanium-containing precursor and the NH3 gas react to form the titanium nitride (TiN) layer on the substrate. The titanium nitride (TiN) films are compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, an interconnect structure is fabricated. The titanium nitride films may also be used as an electrode of a three-dimensional capacitor structure such as for example, trench capacitors and crown capacitors.

Abstract translation: 公开了在衬底上沉积氮化钛（TiN）膜的方法。 氮化钛（TiN）膜可以通过在衬底上交替吸附含钛前体和NH 3气体的循环沉积工艺来形成。 含钛前体和NH 3气体反应以在衬底上形成氮化钛（TiN）层。 氮化钛（TiN）膜与集成电路制造工艺兼容。 在一个集成电路制造工艺中，制造互连结构。 氮化钛膜也可以用作三维电容器结构的电极，例如沟槽电容器和冠状电容器。