公开(公告)号：US20220157574A1

公开(公告)日：2022-05-19

申请号：US17455197

申请日：2021-11-16

Applicant: Applied Materials, Inc.

Inventor： Benjamin SCHWARZ ,  Michael D. WILLWERTH ,  Aditi MITHUN ,  Prabhat KUMAR ,  Grace MATHEW ,  Andreas SCHMID

IPC: H01J37/32

Abstract: Embodiments of the present disclosure provide a method and an apparatus for processing a substrate. The apparatus has a ring assembly. The ring assembly has an edge ring and a shadow ring. The edge ring has a ring shaped body. The edge ring body has a top surface and a bottom surface. Pin holes extend through the edge ring body from the top surface to the bottom surface. The shadow ring has a ring shaped body. The shadow ring body has an upper surface and a lower surface. Sockets are formed on the lower surface, wherein the sockets in the shadow ring body align with the pin holes in the edge ring body.

公开(公告)号：US20220262600A1

公开(公告)日：2022-08-18

申请号：US17175216

申请日：2021-02-12

Applicant: Applied Materials, Inc.

Inventor： Ming XU ,  Ashley Mutsuo OKADA ,  Michael D. WILLWERTH ,  Duc Dang BUCKIUS ,  Jeffrey LUDWIG ,  Aditi MITHUN ,  Benjamin SCHWARZ

IPC: H01J37/32 ,  H01L21/3065

Abstract: A gas distribution apparatus is provided having a first reservoir with a first upstream end and a first downstream end and a second reservoir with a second upstream end and a second downstream end. A reservoir switch valve is in fluid communication with the first downstream end of the first reservoir and the second downstream end of the second reservoir. The reservoir switch valve operable to selectively couple the first reservoir to an outlet of the reservoir switch valve when in a first state, and couple the second reservoir to the outlet of the reservoir switch valve when in a second state. A plurality of proportional flow control valves are provided having inlets coupled in parallel to the outlet of the reservoir switch valve The plurality of proportional flow control valves have outlets configured to provide gas to a processing chamber.

公开(公告)号：US20160293420A1

公开(公告)日：2016-10-06

申请号：US15043183

申请日：2016-02-12

Applicant: Applied Materials, Inc.

Inventor： Dai-Wen TANG ,  Hui SUN ,  Chung LIU ,  Benjamin SCHWARZ

IPC: H01L21/033 ,  H01L21/32 ,  H01L21/311

CPC classification number: H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31122 ,  H01L21/32137 ,  Y10S438/947

Abstract: Embodiments herein provide apparatus and methods for performing an etching process on a spacer layer with good profile control in multiple patterning processes. In one embodiment, a method for patterning a spacer layer during a multiple patterning process includes conformally forming a spacer layer on an outer surface of a patterned structure disposed on a substrate, wherein the patterned structure has having a first group of openings defined therebetween and etching the spacer layer disposed on the substrate while forming an oxidation layer on the spacer layer.

Abstract translation: 本文的实施例提供了用于在多个图案化工艺中对具有良好轮廓控制的间隔层进行蚀刻工艺的装置和方法。 在一个实施例中，用于在多次图案化工艺期间图案化间隔层的方法包括在设置在衬底上的图案化结构的外表面上共形形成间隔层，其中图案化结构具有限定在其间的第一组开口和蚀刻 所述间隔层设置在所述衬底上，同时在所述间隔层上形成氧化层。

公开(公告)号：US20180294200A1

公开(公告)日：2018-10-11

申请号：US15480337

申请日：2017-04-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonard TEDESCHI ,  Benjamin SCHWARZ ,  Changhun LEE ,  Ping Han Hsieh ,  Adauto DIAZ ,  Daniel T. McCormick

IPC: H01L21/66

Abstract: Embodiments may also include a residual chemical reaction diagnostic device. The residual chemical reaction diagnostic device may include a substrate and a residual chemical reaction sensor formed on the substrate. In an embodiment, the residual chemical reaction sensor provides electrical outputs in response to the presence of residual chemical reactions. In an embodiment, the substrate is a device substrate, and the sensor is formed in a scribe line of the device substrate. In an alternative embodiment, the substrate is a process development substrate. In some embodiments, the residual chemical reaction sensor includes, a first probe pad, wherein a plurality of first arms extend out from the first probe pad, and a second probe pad, wherein a plurality of second arms extend out from the second probe pad and are interdigitated with the first arms.

公开(公告)号：US20150294843A1

公开(公告)日：2015-10-15

申请号：US14249042

申请日：2014-04-09

Applicant: Applied Materials, Inc.

Inventor： Feng CHEN ,  Benjamin SCHWARZ ,  Valentin N. TODOROW ,  Li ZHANG ,  Tza-Jing GUNG ,  Lu LIU

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/32862 ,  H01J37/32853

Abstract: Embodiments of the present invention generally provide chamber cleaning methods for cleaning a plasma processing chamber with minimum likelihood of erosion occurred on the chamber components so as to extend service life of chamber components for semiconductor plasma applications. In one embodiment, a method of extending chamber component life in a processing chamber includes supplying a cleaning gas mixture into a plasma processing chamber, applying a RF source power to the plasma processing chamber, and applying a voltage to a substrate support assembly disposed in the processing chamber during cleaning.

Abstract translation: 本发明的实施例通常提供用于清洁等离子体处理室的室清洁方法，其中在室部件上发生最小的侵蚀可能性，以延长半导体等离子体应用的室部件的使用寿命。 在一个实施例中，一种在处理室中延长腔室部件寿命的方法包括将清洁气体混合物供应到等离子体处理室中，将RF源功率施加到等离子体处理室，以及向设置在等离子体处理室中的衬底支撑组件施加电压 处理室清洁。