APPARATUS FOR PROVIDING PLASMA TO A PROCESS CHAMBER
    1.
    发明申请
    APPARATUS FOR PROVIDING PLASMA TO A PROCESS CHAMBER 审中-公开
    用于向流程室提供等离子体的装置

    公开(公告)号:US20140165911A1

    公开(公告)日:2014-06-19

    申请号:US13715281

    申请日:2012-12-14

    CPC classification number: H01J37/32009 H01J37/32091 H01J37/32532

    Abstract: Embodiments of apparatus for providing plasma to a process chamber are provided. In some embodiments, an apparatus may include a first ground plate; an electrode disposed beneath and spaced apart from the first ground plate by a first electrical insulator to define a first gap between the first ground plate and the electrode; a second ground plate disposed beneath and spaced apart from the electrode by a second electrical insulator to define a second gap between the electrode and the second ground plate; a gas inlet to provide a process gas to the first gap; a plurality of through holes disposed through the electrode coupling the first gap to the second gap; and a plurality of first gas outlet holes disposed through the second ground plate to fluidly couple the second gap to an area beneath the second plate.

    Abstract translation: 提供了用于向处理室提供等离子体的设备的实施例。 在一些实施例中,设备可以包括第一接地板; 通过第一电绝缘体设置在第一接地板下方并与第一接地板间隔开的电极,以限定第一接地板和电极之间的第一间隙; 第二接地板,其通过第二电绝缘体设置在电极下方并与电极间隔开,以限定电极和第二接地板之间的第二间隙; 气体入口,用于向第一间隙提供工艺气体; 多个通孔,穿过所述电极,所述电极将所述第一间隙耦合到所述第二间隙; 以及多个第一气体出口孔,其布置成穿过第二接地板,以将第二间隙流体耦合到第二板下方的区域。

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