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    METHOD AND APPARATUS FOR ELECTRO-CHEMICAL PROCESSING
    2.
    发明申请
    METHOD AND APPARATUS FOR ELECTRO-CHEMICAL PROCESSING 失效
    电化学处理方法与装置

    公开(公告)号：US20040003894A1

    公开(公告)日：2004-01-08

    申请号：US09739139

    申请日：2000-12-18

    Applicant: Applied Materials, Inc.

    Inventor： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel A. Carl ,  Sasson Somekh

    IPC: C23F001/00

    CPC classification number: C25D7/123 ,  C25D5/06 ,  C25D5/22 ,  C25D17/001 ,  C25D17/008 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76877

    Abstract: A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a first distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc and a second thickness is deposited on the substrate. During the deposition, the partial enclosure and the substrate are rotated relative one another.

    Abstract translation: 提供了一种用于沉积和平坦化衬底上的材料层的方法和装置。 在一个实施例中，提供了一种装置，其包括部分外壳，可渗透盘，漫射板和任选的阳极。 衬底载体可定位在部分外壳上方，并且适于将衬底移动到与可渗透盘接触或接近的位置。 部分外壳和基板载体可旋转以提供基板和可渗透盘之间的相对运动。 在另一方面，提供了一种方法，其中将基底定位在其中具有电解质的部分封闭体中，其中离开可渗透盘的第一距离处。 任选地将电流施加到衬底的表面，并且在衬底上沉积第一厚度。 接下来，将基板定位成更靠近可渗透盘，并且在基板上沉积第二厚度。 在沉积期间，部分封闭物和基底相对彼此旋转。

    Method for dishing reduction and feature passivation in polishing processes
    3.
    发明申请
    Method for dishing reduction and feature passivation in polishing processes 失效
    抛光过程中凹陷减少和特征钝化的方法

    公开(公告)号：US20030040188A1

    公开(公告)日：2003-02-27

    申请号：US09939323

    申请日：2001-08-24

    Applicant: Applied Materials, Inc.

    Inventor： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel A. Carl

    IPC: H01L021/311

    CPC classification number: H01L21/7684 ,  H01L21/3212

    Abstract: Methods and apparatus for planarizing a substrate surface are provided. In one aspect, a method is provided for planarizing a substrate surface including polishing a first conductive material to a barrier layer material, depositing a second conductive material on the first conductive material by an electrochemical deposition technique, and polishing the second conductive material and the barrier layer material to a dielectric layer. In another aspect, a processing system is provided for forming a planarized layer on a substrate, the processing system including a computer based controller configured to cause the system to polish a first conductive material to a barrier layer material, deposit a second conductive material on the first conductive material by an electrochemical deposition technique, and polish the second conductive material and the barrier layer material to a dielectric layer.

    Abstract translation: 提供了用于平坦化基板表面的方法和装置。 在一个方面，提供了一种用于平坦化衬底表面的方法，包括将第一导电材料抛光到阻挡层材料，通过电化学沉积技术在第一导电材料上沉积第二导电材料，以及抛光第二导电材料和屏障 层材料到介电层。 在另一方面，提供一种用于在衬底上形成平坦化层的处理系统，所述处理系统包括基于计算机的控制器，所述计算机控制器被配置为使所述系统将第一导电材料抛光至阻挡层材料，将第二导电材料沉积在所述第二导电材料上 通过电化学沉积技术的第一导电材料，并将第二导电材料和阻挡层材料抛光到介电层。

    Process control in electrochemically assisted planarization
    4.
    发明申请
    Process control in electrochemically assisted planarization 失效
    电化学辅助平面化过程控制

    公开(公告)号：US20040053512A1

    公开(公告)日：2004-03-18

    申请号：US10244688

    申请日：2002-09-16

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Antoine P. Manens ,  Liang-Yuh Chen

    IPC: H01L021/31

    CPC classification number: B24B37/046 ,  B23H5/06 ,  B23H5/08 ,  B24B37/042 ,  B24B37/22 ,  B24B49/16

    Abstract: Aspects of the invention generally provide a method for polishing a material layer using electrochemical deposition techniques, electrochemical dissolution techniques, polishing techniques, and/or combinations thereof. In one aspect of the invention, the polishing method comprises applying a separate electrical bias, such as a voltage, to each of a plurality of zones of an electrode. Determining the separate biases comprises determining a time that at least one portion of the material layer is associated with each of the zones of the counter-electrode.

    Abstract translation: 本发明的方面通常提供使用电化学沉积技术，电化学溶解技术，抛光技术和/或其组合来抛光材料层的方法。 在本发明的一个方面，抛光方法包括向电极的多个区域中的每一个施加单独的电偏压，例如电压。 确定单独的偏差包括确定材料层的至少一部分与对电极的每个区域相关联的时间。

    Hydrogen bubble reduction on the cathode using double-cell designs
    6.
    发明申请
    Hydrogen bubble reduction on the cathode using double-cell designs 失效
    使用双电池设计在阴极上进行氢气还原

    公开(公告)号：US20030216045A1

    公开(公告)日：2003-11-20

    申请号：US10455861

    申请日：2003-06-06

    Applicant: Applied Materials, Inc.

    Inventor： Yan Wang ,  Feng Q. Liu ,  Alain Duboust ,  Siew S. Neo ,  Liang-Yuh Chen ,  Yongqi Hu

    IPC: H01L021/302 ,  H01L021/461

    CPC classification number: B23H3/08 ,  B23H5/08 ,  B24B37/0056 ,  B24B37/044 ,  B24B37/046 ,  C09G1/04 ,  C25F3/02 ,  H01L21/32125 ,  H01L21/32134

    Abstract: An apparatus and method for planarizing a surface of a substrate using a chamber separated into two parts by a membrane, and two separate electrolytes is provided. The embodiments of the present invention generally provide an electrochemical mechanical polishing system that reduces the number of defects found on the substrate surface after polishing. An exemplary electrochemical apparatus includes a physical barrier that prevents any trapped gas or gas generated during processing from residing in areas that can cause defects on the substrate. The process can be aided by the addition of various chemical components to the electrolyte that tend to reduce the gas generation at the cathode surface during the ECMP anodic dissolution process.

    Abstract translation: 使用通过膜分离成两部分的室来平坦化基板的表面的装置和方法，以及两个单独的电解质。 本发明的实施方案通常提供一种电化学机械抛光系统，其减少抛光后在基底表面上发现的缺陷数量。 示例性电化学装置包括物理屏障，其防止在处理期间产生的任何捕获的气体或气体驻留在可能导致基板上的缺陷的区域中。 该方法可以通过在电解质中添加各种化学成分来辅助，该电解质在ECMP阳极溶解过程期间倾向于减少阴极表面的气体产生。

    Reliability barrier integration for Cu application
    7.
    发明申请
    Reliability barrier integration for Cu application 审中-公开
    Cu应用的可靠性屏障整合

    公开(公告)号：US20030013297A1

    公开(公告)日：2003-01-16

    申请号：US10245104

    申请日：2002-09-16

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Fusen Chen ,  Liang-Yuh Chen ,  Roderick Craig Mosely ,  Moshe Eizenberg

    IPC: H01L021/4763

    CPC classification number: H01L21/76804 ,  C25D5/02 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The present invention provides a process sequence and related hardware for filling a hole with copper. The sequence comprises first forming a reliable barrier layer in the hole to prevent diffusion of the copper into the dielectric layer through which the hole is formed. One sequence comprises forming a generally conformal barrier layer over a patterned dielectric, etching the bottom of the hole, depositing a second barrier, and then filling the hole with copper. An alternative sequence comprises depositing a first barrier layer over a blanket dielectric layer, forming a hole through both the barrier layer and the dielectric layer, depositing a generally conformal second barrier layer in the hole, removing the barrier layer from the bottom of the hole, and selectively filling the hole with copper.

    Abstract translation: 本发明提供了用铜填充孔的工艺顺序和相关硬件。 该顺序包括首先在孔中形成可靠的阻挡层，以防止铜扩散到形成孔的电介质层中。 一个序列包括在图案化电介质上形成大致保形的阻挡层，蚀刻孔的底部，沉积第二屏障，然后用铜填充孔。 替代的顺序包括在覆盖的介电层上沉积第一阻挡层，通过阻挡层和电介质层两者形成孔，在孔中沉积大致保形的第二阻挡层，从孔的底部去除阻挡层， 并用铜选择性地填充孔。

    Articles for polishing semiconductor substrates
    9.
    发明申请
    Articles for polishing semiconductor substrates 失效
    用于抛光半导体衬底的物品

    公开(公告)号：US20020102853A1

    公开(公告)日：2002-08-01

    申请号：US10026854

    申请日：2001-12-20

    Applicant: Applied Materials, Inc.

    Inventor： Shijian Li ,  Liang-Yuh Chen ,  Alain Duboust

    IPC: H01L021/302 ,  H01L021/461

    CPC classification number: B24B37/24 ,  B23H5/08 ,  B24B57/02

    Abstract: Methods, articles of manufacture, and apparatus are provided for depositing a layer, planarizing a layer, or combinations thereof, a material layer on a substrate. In one embodiment, an article of manufacture is provided for polishing a substrate, comprising a polishing article having a polishing surface, a plurality of passages formed through the polishing article for flow of material therethrough, and a plurality of grooves disposed in the polishing surface. The article of manufacture may be used in a processing system. The article of manufacture may be used in a method for processing a substrate, comprising positioning the substrate in an electrolyte solution containing a polishing article, optionally depositing a material on the substrate by an electrochemical deposition method, and polishing the substrate with the polishing article.

    Abstract translation: 提供了方法，制品和装置，用于在衬底上沉积层，平坦化层或其组合材料层。 在一个实施例中，提供了一种用于抛光衬底的制品，其包括具有研磨表面的抛光制品，通过抛光制品形成的用于材料流动的多个通道，以及设置在抛光表面中的多个凹槽。 制品可以用在处理系统中。 制造物品可以用于处理基材的方法，包括将基底定位在含有抛光制品的电解质溶液中，任选地通过电化学沉积方法将材料沉积在基底上，并用抛光制品抛光基底。

    Method and apparatus for substrate polishing
    10.
    发明申请
    Method and apparatus for substrate polishing 审中-公开
    用于基板抛光的方法和装置

    公开(公告)号：US20030213703A1

    公开(公告)日：2003-11-20

    申请号：US10151538

    申请日：2002-05-16

    Applicant: Applied Materials, Inc.

    Inventor： Yan Wang ,  Feng Q. Liu ,  Yongqi Hu ,  Alain Duboust ,  Liang-Yuh Chen ,  Paul D. Butterfield ,  Ralph M. Wadensweiler

    IPC: B23H003/00

    CPC classification number: B24B37/24 ,  B23H5/08 ,  B23H5/10 ,  B24B37/042

    Abstract: A method and apparatus are provided for polishing a substrate surface. In one aspect, an apparatus for polishing a substrate includes a pad assembly having a conductive pad, a backing and a conductive layer adapted to be biased by a power source. In another embodiment, an apparatus for polishing a substrate includes a pad assembly disposed in a basin. The basin has two electrodes coupled to opposite poles of a power source. Each electrode extends partially through a respective aperture formed in the pad assembly. The apparatus may be part of an electro-chemical polishing station that may optionally be part of a system that includes chemical mechanical polishing stations.

    Abstract translation: 提供了一种用于抛光衬底表面的方法和装置。 一方面，一种用于抛光衬底的装置包括具有导电垫，背衬和适于被电源偏置的导电层的焊盘组件。 在另一个实施例中，用于抛光衬底的装置包括设置在盆中的衬垫组件。 盆地具有耦合到电源的相对极的两个电极。 每个电极部分地延伸穿过形成在垫组件中的相应孔。 该设备可以是电化学抛光站的一部分，其可以可选地是包括化学机械抛光站的系统的一部分。

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