公开(公告)号：US20180342395A1

公开(公告)日：2018-11-29

申请号：US15988820

申请日：2018-05-24

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Raymond HUNG ,  Namsung KIM ,  Srinivas NEMANI ,  Ellie YIEH ,  Jong CHOI ,  Christopher AHLES ,  Andrew KUMMEL

IPC: H01L21/285 ,  H01L21/324

CPC classification number: H01L21/28518 ,  H01L21/28562 ,  H01L21/324

Abstract: Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoF6 precursor and a Si2H6 precursor which is followed by an additional Si2H6 overdose exposure to selectively deposit a MoSix material comprising MoSi2 on the silicon containing surface of the substrate.

公开(公告)号：US20210066064A1

公开(公告)日：2021-03-04

申请号：US17004850

申请日：2020-08-27

Applicant: APPLIED MATERIALS, INC.

Inventor： He REN ,  Shi YOU ,  Hao JIANG ,  Raymond HUNG ,  Mehul NAIK ,  Chentsau Chris YING ,  Mang-Mang LING ,  Lin DONG

IPC: H01L21/02

Abstract: Methods and apparatus for cleaning a contaminated metal surface on a substrate, including: exposing a substrate including a dielectric surface and a metal surface including metal nitride residues and metal carbide residues to a process gas including an oxidizing agent to form a substrate including a dielectric surface and a metal surface including metal oxides residues; and exposing a substrate including a dielectric surface and a metal surface including metal oxides residues to a process gas including a reducing agent to form a substrate including a dielectric surface and a substantially pure metal surface.

公开(公告)号：US20250167167A1

公开(公告)日：2025-05-22

申请号：US18408820

申请日：2024-01-10

Applicant: Applied Materials, Inc.

Inventor： Ying WANG ,  Ke ZHENG ,  Raymond HUNG ,  ChangBum YONG ,  Guan Huei SEE ,  Gaurav MEHTA

IPC: H01L23/00 ,  H01L25/00

Abstract: Methods and apparatus for substrate processing are provided. In some embodiments, a substrate processing method includes: sequentially stacking a plurality of dies on a substrate into a stacked assembly; thermally treating the plurality of dies; and stacking at least one additional die atop the thermally treated plurality of dies.

公开(公告)号：US20230034058A1

公开(公告)日：2023-02-02

申请号：US17389772

申请日：2021-07-30

Applicant: Applied Materials, Inc.

Inventor： Raymond HUNG ,  Mehul NAIK ,  Michael HAVERTY

IPC: H01L21/285 ,  H01L29/45 ,  H01L29/40 ,  H01L29/47

Abstract: Methods for reducing interface resistance of semiconductor devices leverage dual work function metal silicide. In some embodiments, a method may comprise selectively depositing a metal silicide layer on an Epi surface and adjusting a metal-to-silicon ratio of the metal silicide layer during deposition to alter a work function of the metal silicide layer based on whether the Epi surface is a P type Epi surface or an N type Epi surface to achieve a Schottky barrier height of less than 0.5 eV. The work function for a P type Epi surface may be adjusted to a value of approximately 5.0 eV and the work function for an N type Epi surface may be adjusted to a value of approximately 3.8 eV. The deposition of the metal silicide layer on the Epi surface may be performed prior to deposition of a contact etch stop layer and an activation anneal.

公开(公告)号：US20200091010A1

公开(公告)日：2020-03-19

申请号：US16559227

申请日：2019-09-03

Applicant: Applied Materials, Inc.

Inventor： Xuebin LI ,  Schubert S. CHU ,  Errol Antonio C. SANCHEZ ,  Patricia M. LIU ,  Gaurav THAREJA ,  Raymond HUNG

IPC: H01L21/8238 ,  H01L21/02 ,  H01L21/321 ,  H01L29/66

Abstract: The systems and methods discussed herein are for a cluster tool that can be used for MOSFET device fabrication, including NMOS and PMOS devices. The cluster tool includes process chambers for pre-cleaning, metal-silicide or metal-germanide film formation, and surface protection operations such as capping and nitridation. The cluster tool can include one or more process chambers configured to form a source and a drain. The devices fabricated in the cluster tool are fabricated to have at least one protective layer formed over the metal-silicide or metal-germanide film to protect the film from contamination during handling and transfer to separate systems.

公开(公告)号：US20190103278A1

公开(公告)日：2019-04-04

申请号：US16189429

申请日：2018-11-13

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Raymond HUNG ,  Namsung KIM ,  Srinivas D. NEMANI ,  Ellie Y. YIEH ,  Jong CHOI ,  Christopher AHLES ,  Andrew KUMMEL

IPC: H01L21/285 ,  H01L21/311 ,  H01L21/324 ,  C23C16/42 ,  C23C16/455 ,  C23C16/46

Abstract: Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoF6 precursor and a Si2H6 precursor which is followed by an additional Si2H6 overdose exposure to selectively deposit a MoSix material comprising MoSi2 on the silicon containing surface of the substrate. Methods described herein also provide for selective native oxide removal which enables removal of native oxide material without etching bulk oxide materials.

公开(公告)号：US20240170443A1

公开(公告)日：2024-05-23

申请号：US17989826

申请日：2022-11-18

Applicant: Applied Materials, Inc.

Inventor： Ruiping WANG ,  Ying WANG ,  Raymond HUNG ,  Guan Huei SEE

IPC: H01L23/00 ,  H01L21/67

CPC classification number: H01L24/80 ,  H01L21/67132 ,  H01L21/67173 ,  H01L2224/80011 ,  H01L2224/80013 ,  H01L2224/80019 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: A process flow for bonding a die to a substrate incorporates defectivity risk management and yield promotion by reducing flow complexity. In some embodiments, the process flow may include a radiation process on a component substrate to weaken an adhesive bonding of dies from a surface of the component substrate, a first wet clean process on the component substrate after the radiation process to clean die bonding surfaces, eject and pick processes after performing the first wet clean process to remove dies from the component substrate for bonding to a substrate, a plasma activation process on the substrate, a second wet clean process after the plasma activation process on the substrate to clean a substrate bonding surface of the substrate, and a hybrid bonding process to bond die bonding surfaces of the dies to the substrate bonding surface of the substrate.

公开(公告)号：US20210320034A1

公开(公告)日：2021-10-14

申请号：US16845749

申请日：2020-04-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Wei LEI ,  Yi XU ,  Yu LEI ,  Tae Hong HA ,  Raymond HUNG ,  Shirish A. PETHE

IPC: H01L21/768 ,  H01L21/285 ,  H01L21/3213

Abstract: Methods and apparatus for selectively depositing a tungsten layer atop a dielectric surface. In embodiments the method includes: depositing a tungsten layer via a physical vapor deposition (PVD) process atop a substrate field and atop a sidewall and a dielectric bottom surface of a feature disposed in a substrate to form a first tungsten portion having a first thickness atop the substrate field, a second tungsten portion having a second thickness atop the sidewall, and a third tungsten portion having a third thickness atop the dielectric bottom surface, wherein the second thickness is less than the first thickness and third thickness; oxidizing a top surface of the tungsten layer to form a first oxidized tungsten portion atop the substrate field, a second oxidized tungsten portion atop the side wall, and a third oxidized tungsten portion atop the dielectric bottom surface; removing the first oxidized tungsten portion, the second oxidized tungsten portion and the third oxidized tungsten portion, wherein the second tungsten portion is completely removed from the sidewall; and passivating or completely removing the first tungsten portion from the substrate field.