METHOD AND APPARATUS TO ENABLE DROPLET JET CLEANING AT ELEVATED TEMPERATURE

    公开(公告)号:US20240399425A1

    公开(公告)日:2024-12-05

    申请号:US18205067

    申请日:2023-06-02

    Abstract: Embodiments of the disclosure include an apparatus and method of cleaning a substrate. The disclosure describes a method of cleaning a substrate includes supplying a gas at a gas temperature and a gas mass flow rate to a nozzle. The method also includes supplying a liquid at a liquid temperature and a liquid mass flow rate to the nozzle. The method also includes mixing the gas with the liquid in the nozzle to form a fluid mixture having a mixture temperature of not more than about 10° C. below the liquid temperature. The method also includes spraying the fluid mixture onto a surface of the substrate through an orifice in the nozzle.

    METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE

    公开(公告)号:US20230129590A1

    公开(公告)日:2023-04-27

    申请号:US17508489

    申请日:2021-10-22

    Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for hybrid bonding a wafer comprises performing a first vacuum processing procedure on the wafer disposed within a first processing chamber, obtaining at least one of moisture measurements or organic species measurements within the first processing chamber, comparing the obtained at least one of moisture measurements or organic species measurements with a predetermined threshold, and one of when a comparison of the obtained at least one of moisture measurements or organic species measurements is equal to or less than the predetermined threshold automatically performing a second vacuum processing procedure in a second processing chamber different from the first processing chamber on the wafer, or when the comparison of the obtained at least one of moisture measurements or organic species measurements is greater than the predetermined threshold automatically continuing performing the first vacuum processing procedure on the wafer.

    METHODS AND APPARATUS FOR MINIMIZING VOIDS FOR CHIP ON WAFER COMPONENTS

    公开(公告)号:US20230045597A1

    公开(公告)日:2023-02-09

    申请号:US17873284

    申请日:2022-07-26

    Abstract: Methods and apparatus for increasing a bonded area between an ultrathin die and a substrate. In some embodiments, the method may include cleaning the die and the substrate, placing the die on an upper surface of the substrate, compacting the die to the substrate using a downward force of at least one compacting roller on the die and the upper surface of the substrate to increase a bonded area between the die and the upper surface of the substrate, and annealing the die and the substrate. The compacting roller has a soft surface layer that engages with the die and the upper surface of the substrate. The soft surface layer has a Shore hardness of greater than approximately 30 and less than approximately 80. In some embodiments, the substrate and/or the compacting roller may rotate during contact with each other.

    INTEGRATED PROCESS FLOWS FOR HYBRID BONDING
    5.
    发明公开

    公开(公告)号:US20240170443A1

    公开(公告)日:2024-05-23

    申请号:US17989826

    申请日:2022-11-18

    Abstract: A process flow for bonding a die to a substrate incorporates defectivity risk management and yield promotion by reducing flow complexity. In some embodiments, the process flow may include a radiation process on a component substrate to weaken an adhesive bonding of dies from a surface of the component substrate, a first wet clean process on the component substrate after the radiation process to clean die bonding surfaces, eject and pick processes after performing the first wet clean process to remove dies from the component substrate for bonding to a substrate, a plasma activation process on the substrate, a second wet clean process after the plasma activation process on the substrate to clean a substrate bonding surface of the substrate, and a hybrid bonding process to bond die bonding surfaces of the dies to the substrate bonding surface of the substrate.

    METHODS, SYSTEMS, AND APPARATUS FOR TAPE-FRAME SUBSTRATE CLEANING AND DRYING

    公开(公告)号:US20240071745A1

    公开(公告)日:2024-02-29

    申请号:US18383617

    申请日:2023-10-25

    CPC classification number: H01L21/02076 B08B3/02 H01L21/67051 H01L21/6836

    Abstract: Methods, systems, and apparatus for cleaning and drying a tape-frame substrate are provided. In embodiments, an apparatus for supporting a tape-frame substrate includes a chuck having a first side and a second side opposite the first side, the first side having a convex surface configured to support the tape-frame substrate; and a plurality of channels extending through the chuck and having outlets along the first side, wherein the plurality of channels are configured to dispense fluid from the outlets along the convex surface of the first side. In embodiments, a support system includes the chuck and a holder configured to mount a tape-frame substrate to the chuck. The plurality of channels are configured to dispense fluid from the outlets and between the tape-frame substrate and the convex surface of the chuck when the tape-frame substrate is mounted to the chuck.

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