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公开(公告)号:US12011731B2
公开(公告)日:2024-06-18
申请号:US17365727
申请日:2021-07-01
Applicant: APPLIED MATERIALS, INC.
Inventor: Yao-Hung Yang , Shantanu Rajiv Gadgil , Tanmay Pramod Gurjar , Sudhir R. Gondhalekar
IPC: B05B15/18 , B05B1/18 , C23C16/455
CPC classification number: B05B15/18 , B05B1/18 , C23C16/45565
Abstract: Embodiments of showerheads for use in a process chamber and methods of reducing drooping of a showerhead faceplate are provided herein. In some embodiments, a showerhead for use in a process chamber includes: a faceplate having a plurality of gas distribution holes disposed therethrough; and one or more cables that engage with the faceplate and configured to prestress the faceplate.
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公开(公告)号:US11694879B2
公开(公告)日:2023-07-04
申请号:US16664620
申请日:2019-10-25
Applicant: Applied Materials, Inc.
Inventor: Ian Widlow , Govinda Raj , Gary U. Keppers , Aravind Dugganna Naik , Francisco Rodarte , Sudhir R. Gondhalekar , Ravikumara Kodinaganhalli
CPC classification number: H01J37/32642 , C23C16/4404 , C23C16/4405 , C23C16/4407 , C23C16/4409 , H01J37/32449 , H01J37/32477 , H01J37/32862
Abstract: A component, a method of manufacturing a component, and a method of cleaning a component is provided. The component includes a gas flow system within the component, wherein the gas flow system fluidly couples one or more inlet holes and one or more outlet holes. The manufacturing of the component results in an arc shaped groove and a circumferential groove created in the body of the ring. The component undergoes one or more cleaning operations, including rinsing, baking, or purging operations. The cleaning operations remove debris or particles in or on the component, where the debris or particles can be caused during manufacturing of the component, or during use of the component in a semiconductor processing system.
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公开(公告)号:US20210335603A1
公开(公告)日:2021-10-28
申请号:US16856282
申请日:2020-04-23
Applicant: Applied Materials, Inc.
Inventor: Tanmay P. Gurjar , Sumit S. Patankar , Sudhir R. Gondhalekar
IPC: H01L21/02 , H01J37/305
Abstract: Exemplary semiconductor processing systems may include a remote plasma source. The remote plasma source may include a first plasma block segment defining an inlet to an internal channel of the first plasma block segment. The first plasma block segment may also define a cooling channel between the internal channel of the first plasma block segment and a first exterior surface of the first plasma block segment. The remote plasma source may include a second plasma block segment defining an outlet from an internal channel of the second plasma block segment. The second plasma block segment may also define a cooling channel between the internal channel of the second plasma block segment and a first exterior surface of the second plasma block segment. The systems may include a semiconductor processing chamber defining an inlet fluidly coupled with the outlet from the remote plasma source.
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公开(公告)号:USD1027120S1
公开(公告)日:2024-05-14
申请号:US29762536
申请日:2020-12-17
Applicant: Applied Materials, Inc.
Designer: Yao-Hung Yang , Eric Ruhland , Saurabh M. Chaudhari , Dien-Yeh Wu , Philip Wayne Nagle , Aniruddha Pal , Sudhir R. Gondhalekar , Siamak Salimian , Scott Lin , Boon Sen Chan
Abstract: FIG. 1 is top perspective view of a seal for an assembly in a vapor deposition chamber.
FIG. 2 is a bottom perspective view of the seal for an assembly in a vapor deposition chamber illustrated in FIG. 1.
FIG. 3 is a top plan view of the seal for an assembly in a vapor deposition chamber illustrated in FIG. 1.
FIG. 4 is a bottom plan view of the seal for an assembly in a vapor deposition chamber illustrated in FIG. 1.
FIG. 5 is a front view of the seal for an assembly in a vapor deposition chamber illustrated in FIG. 1.
FIG. 6 is a rear view of the seal for an assembly in a vapor deposition chamber illustrated in FIG. 1.
FIG. 7 is a right side view of the seal for an assembly in a vapor deposition chamber illustrated in FIG. 1.
FIG. 8 is a left side view of the seal for an assembly in a vapor deposition chamber illustrated in FIG. 1.
FIG. 9 is an enlarged sectional view of a portion of the seal for an assembly in a vapor deposition chamber illustrated in FIG. 1 showing details of an outer segment of the seal.
FIG. 10 is an enlarged sectional view of a portion of the seal for an assembly in a vapor deposition chamber illustrated in FIG. 1 showing details of a central segment of the seal.
FIG. 11 is an enlarged sectional view of a portion of the seal for an assembly in a vapor deposition chamber illustrated in FIG. 1 showing details of an outer segment of the seal.
FIG. 12 is an enlarged sectional view of a portion of the seal for an assembly in a vapor deposition chamber illustrated in FIG. 2 showing details of an outer segment of the seal.
FIG. 13 is an enlarged sectional view of a portion of the seal for an assembly in a vapor deposition chamber illustrated in FIG. 3 showing details of a central segment of the seal.
FIG. 14 is an enlarged sectional view of a portion of the seal for an assembly in a vapor deposition chamber illustrated in FIG. 4 showing details of a central segment of the seal.
FIG. 15 is an enlarged sectional view of a portion of the seal for an assembly in a vapor deposition chamber illustrated in FIG. 6 showing details of an outer segment of the seal.
FIG. 16 is an enlarged sectional view of a portion of the seal for an assembly in a vapor deposition chamber illustrated in FIG. 7 showing details of an outer segment of the seal; and,
FIG. 17 is a top plan view of the seal for an assembly in a vapor deposition chamber illustrated in FIG. 3 shown in a portion of an assembly (in phantom).
The broken and phantom lines in the Figures illustrate unclaimed parts of the seal for an assembly in a vapor deposition chamber and form no part of the claimed design.-
公开(公告)号:US11710630B2
公开(公告)日:2023-07-25
申请号:US16856282
申请日:2020-04-23
Applicant: Applied Materials, Inc.
Inventor: Tanmay P. Gurjar , Sumit S. Patankar , Sudhir R. Gondhalekar
IPC: H01L21/02 , H01J37/305 , C23F1/08 , C23C14/56 , H01J37/32
CPC classification number: H01L21/02252 , C23C14/56 , C23F1/08 , H01J37/3053 , H01J37/32357 , H01J37/32522 , H01J2237/0437
Abstract: Exemplary semiconductor processing systems may include a remote plasma source. The remote plasma source may include a first plasma block segment defining an inlet to an internal channel of the first plasma block segment. The first plasma block segment may also define a cooling channel between the internal channel of the first plasma block segment and a first exterior surface of the first plasma block segment. The remote plasma source may include a second plasma block segment defining an outlet from an internal channel of the second plasma block segment. The second plasma block segment may also define a cooling channel between the internal channel of the second plasma block segment and a first exterior surface of the second plasma block segment. The systems may include a semiconductor processing chamber defining an inlet fluidly coupled with the outlet from the remote plasma source.
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公开(公告)号:US20220005723A1
公开(公告)日:2022-01-06
申请号:US17368134
申请日:2021-07-06
Applicant: Applied Materials, Inc.
Inventor: Hanish Kumar Panavalappil Kumarankutty , Sean M. Seutter , Sudhir R. Gondhalekar , Wendell Glenn Boyd, JR. , Badri Ramamurthi , Shekhar Athani , Anil Kumar Kalal , Jay Dee Pinson, II
IPC: H01L21/683 , H01J37/32
Abstract: Embodiments of the disclosure provide electrostatic chucks for securing substrates during processing. Some embodiments of this disclosure provide methods and apparatus for increased temperature control across the radial profile of the substrate. Some embodiments of the disclosure provide methods and apparatus for providing control of hydrogen concentration in processed films during a high-density plasma (HDP) process.
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公开(公告)号:US09384950B2
公开(公告)日:2016-07-05
申请号:US14601274
申请日:2015-01-21
Applicant: Applied Materials, Inc.
Inventor: Ren-Guan Duan , Juan Carlos Rocha-Alvarez , Jianhua Zhou , Ningli Liu , Yihong Chen , Abhijit Basu Mallick , Sudhir R. Gondhalekar
CPC classification number: H01J37/32477 , C09D1/00 , C09D7/61 , H01J37/32467
Abstract: In one embodiment, a processing chamber is disclosed wherein at least one surface of the processing chamber has a coating comprising SivYwMgxAlyOz, wherein v ranges from about 0.0196 to 0.2951, w ranges from about 0.0131 to 0.1569, x ranges from about 0.0164 to 0.0784, y ranges from about 0.0197 to 0.1569, z ranges from about 0.5882 to 0.6557, and v+w+x+y+z=1.
Abstract translation: 在一个实施方案中,公开了一种处理室,其中处理室的至少一个表面具有包含SivYwMg x AlyO z的涂层,其中v为约0.0196至0.2951,w为约0.0131至0.1569,x为约0.0164至0.0784,y为 范围为约0.0197至0.1569,z范围为约0.5882至0.6557,v + w + x + y + z = 1。
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