公开(公告)号：US20160049323A1

公开(公告)日：2016-02-18

申请号：US14824229

申请日：2015-08-12

Applicant: Applied Materials, Inc.

Inventor： Zheng John YE ,  Jay D. PINSON, II ,  Hiroji HANAWA ,  Jianhua ZHOU ,  Xing LIN ,  Ren-Guan DUAN ,  Kwangduk Douglas LEE ,  Bok Hoen KIM ,  Swayambhu P. BEHERA ,  Sungwon HA ,  Ganesh BALASUBRAMANIAN ,  Juan Carlos ROCHA- ALVAREZ ,  Prashant Kumar KULSHRESHTHA ,  Jason K. FOSTER ,  Mukund SRINIVASAN ,  Uwe P. HALLER ,  Hari K. PONNEKANTI

IPC: H01L21/683 ,  H02N13/00

CPC classification number: H01L21/6833 ,  H01L21/68757 ,  H02N13/00

Abstract: Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×107 ohm-cm to about 1×1015 ohm-cm in a temperature of about 250° C. to about 700° C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600° C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.

Abstract translation: 本公开的实施例提供了一种静电卡盘，用于在高温下维持在等离子体反应器中正在加工的基板的平坦度。 在一个实施例中，静电卡盘包括联接到支撑杆的卡盘体，卡盘主体具有基底支撑表面，卡盘体的体积电阻率值约为1×107ohm-cm至约1×1015ohm- 在约250℃至约700℃的温度下，以及嵌入在本体中的电极，电极耦合到电源。 在一个实例中，卡盘主体由氮化铝材料组成，已经被观察到能够在沉积或蚀刻过程期间优化约600℃或更高的夹持性能，或任何其他使用高工作温度和 基板夹紧功能。

公开(公告)号：US20170301537A1

公开(公告)日：2017-10-19

申请号：US15636239

申请日：2017-06-28

Applicant: Applied Materials, Inc.

Inventor： Swayambhu P. BEHERA ,  Shahid SHAIKH ,  Pramit MANNA ,  Mandar B. PANDIT ,  Tersem SUMMAN ,  Patrick REILLY ,  Deenesh PADHI ,  Bok Hoen KIM ,  Heung Lak PARK ,  Derek R. WITTY

IPC: H01L21/02 ,  C23C16/26 ,  C23C16/50 ,  H01L21/311 ,  H01L21/033

CPC classification number: H01L21/02115 ,  C23C16/26 ,  C23C16/50 ,  H01L21/02274 ,  H01L21/0337 ,  H01L21/31116

Abstract: Embodiments of the disclosure relate to deposition of a conformal carbon-based material. In one embodiment, the method comprises depositing a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, introducing a hydrocarbon source, a plasma-initiating gas, and a dilution gas into the processing chamber, generating a plasma in the processing chamber at a deposition temperature of about 80° C. to about 550° C. to deposit a conformal amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers, and removing the patterned features formed from the sacrificial dielectric layer.

公开(公告)号：US20160005596A1

公开(公告)日：2016-01-07

申请号：US14770412

申请日：2014-02-14

Applicant: APPLIED MATERIALS, INC.

Inventor： Swayambhu P. BEHERA ,  Shahid SHAIKH ,  Pramit MANNA ,  Mandar B. PANDIT ,  Tersem SUMMAN ,  Patrick REILLY ,  Deenesh PADHI ,  Bok Hoen KIM ,  Heung Lak PARK ,  Derek R. WITTY

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/02115 ,  C23C16/26 ,  C23C16/50 ,  H01L21/02274 ,  H01L21/0337 ,  H01L21/31116

Abstract: Embodiments of the invention relate to deposition of a conformal carbon-based material. In one embodiment, the method comprises depositing a sacrificial dielectric layer with a predetermined thickness over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, introducing a hydrocarbon source, a plasma-initiating gas, and a dilution gas into the processing chamber, wherein a volumetric flow rate of hydrocarbon source: plasma-initiating gas: dilution gas is in a ratio of 1:0.5:20, generating a plasma at a deposition temperature of about 300 C to about 500 C to deposit a conformal amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate, and removing the patterned features.

Abstract translation: 本发明的实施方案涉及保形碳基材料的沉积。 在一个实施例中，该方法包括在衬底上沉积具有预定厚度的牺牲电介质层，通过去除牺牲电介质层的部分以暴露衬底的上表面，引入烃源，等离子体 - 引发气体和稀释气体进入处理室，其中烃源的体积流量：等离子体起始气体：稀释气体的比例为1:0.5:20，在约300℃的沉积温度下产生等离子体 C至约500℃以在图案化特征和暴露的基底的上表面上沉积共形无定形碳层，从图案化特征的上表面和基底的上表面选择性地除去无定形碳层， 图案特征。