Abstract:
A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.
Abstract:
A substrate support assembly includes a shaft assembly, a pedestal coupled to a portion of the shaft assembly, and a first rotary connector coupled to the shaft assembly, wherein the first rotary connector comprises a first coil member surrounding a rotatable shaft member that is electrically coupled to the shaft assembly, the first coil member being rotatable with the rotatable shaft, and a second coil member surrounding the first coil member, the second coil member being stationary relative to the first coil member, wherein the first coil member electrically couples with the second coil member when the rotating radio frequency applicator is energized and provides a radio frequency signal/power to the pedestal through the shaft assembly.
Abstract:
Techniques are disclosed for methods and apparatuses of an electrostatic chuck suitable for operating at high operating temperatures. In one example, a substrate support assembly is provided. The substrate support assembly includes a substantially disk-shaped ceramic body having an upper surface, a cylindrical sidewall, and a lower surface. The upper surface is configured to support a substrate thereon for processing the substrate in a vacuum processing chamber. The cylindrical sidewall defines an outer diameter of the ceramic body. The lower surface is disposed opposite the upper surface. An electrode is disposed in the ceramic body. A circuit is electrically connected to the electrode. The circuit includes a DC chucking circuit, a first RF drive circuit, and a second RF dive circuit. The DC chucking circuit, the first RF drive circuit and the second RF drive circuit are electrically coupled with the electrode.
Abstract:
Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×107 ohm-cm to about 1×1015 ohm-cm in a temperature of about 250° C. to about 700° C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600° C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.
Abstract:
A substrate support assembly includes a shaft assembly, a pedestal coupled to a portion of the shaft assembly, and a first rotary connector coupled to the shaft assembly, wherein the first rotary connector comprises a first coil member surrounding a rotatable shaft member that is electrically coupled to the shaft assembly, the first coil member being rotatable with the rotatable shaft, and a second coil member surrounding the first coil member, the second coil member being stationary relative to the first coil member, wherein the first coil member electrically couples with the second coil member when the rotating radio frequency applicator is energized and provides a radio frequency signal/power to the pedestal through the shaft assembly.