公开(公告)号：US10553440B2

公开(公告)日：2020-02-04

申请号：US15186950

申请日：2016-06-20

Applicant: ASM International N.V.

Inventor： Viljami J. Pore ,  Suvi P. Haukka ,  Tom E. Blomberg ,  Eva E. Tois

IPC: H01L21/28 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78 ,  H01L21/285 ,  H01L21/321 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/3215

Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. Nickel thin films can be used directly in silicidation and germanidation processes.

公开(公告)号：US09634106B2

公开(公告)日：2017-04-25

申请号：US14815633

申请日：2015-07-31

Applicant: ASM INTERNATIONAL N.V.

Inventor： Viljami J. Pore ,  Suvi P. Haukka ,  Tom E. Blomberg ,  Eva E. Tois

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/285 ,  H01L21/324 ,  C23C16/40 ,  C23C16/06 ,  H01L29/45 ,  C23C16/455 ,  H01L21/3215 ,  H01L29/49

CPC classification number: H01L29/45 ,  C23C16/06 ,  C23C16/406 ,  C23C16/45527 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3215 ,  H01L21/324 ,  H01L21/76843 ,  H01L21/76855 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66666 ,  H01L29/7827

Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.

公开(公告)号：US20190081149A1

公开(公告)日：2019-03-14

申请号：US16040863

申请日：2018-07-20

Applicant: ASM INTERNATIONAL N.V.

Inventor： Viljami J. Pore ,  Suvi P. Haukka ,  Tom E. Blomberg ,  Eva E. Tois

IPC: H01L29/45 ,  H01L21/285 ,  H01L21/3215 ,  H01L29/78 ,  H01L29/66

Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.

公开(公告)号：US20200335342A1

公开(公告)日：2020-10-22

申请号：US16908241

申请日：2020-06-22

Applicant: ASM International N.V.

Inventor： Suvi Haukka ,  Viljami J. Pore ,  Antti Niskanen

IPC: H01L21/205 ,  H01L21/02 ,  C23C16/30 ,  C23C16/455 ,  C30B25/14 ,  C30B29/40

Abstract: Atomic layer deposition (ALD) processes for forming thin films comprising InN are provided. The thin films may find use, for example, in light-emitting diodes.

公开(公告)号：US10043880B2

公开(公告)日：2018-08-07

申请号：US15492892

申请日：2017-04-20

Applicant: ASM INTERNATIONAL N.V.

Inventor： Viljami J. Pore ,  Suvi P. Haukka ,  Tom E. Blomberg ,  Eva E. Tois

IPC: H01L29/45 ,  C23C16/06 ,  C23C16/455 ,  C23C16/40 ,  H01L21/285 ,  H01L21/324 ,  H01L21/3215 ,  H01L29/78 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/45 ,  C23C16/06 ,  C23C16/406 ,  C23C16/45527 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3215 ,  H01L21/324 ,  H01L21/76843 ,  H01L21/76855 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66666 ,  H01L29/7827

Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.

公开(公告)号：US20170352737A1

公开(公告)日：2017-12-07

申请号：US15492892

申请日：2017-04-20

Applicant: ASM INTERNATIONAL N.V.

Inventor： Viljami J. Pore ,  Suvi P. Haukka ,  Tom E. Blomberg ,  Eva E. Tois

IPC: H01L29/45 ,  H01L29/66 ,  H01L21/3215 ,  H01L21/324 ,  C23C16/06 ,  H01L21/285 ,  C23C16/455 ,  H01L29/78 ,  C23C16/40 ,  H01L29/49

CPC classification number: H01L29/45 ,  C23C16/06 ,  C23C16/406 ,  C23C16/45527 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3215 ,  H01L21/324 ,  H01L21/76843 ,  H01L21/76855 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66666 ,  H01L29/7827

Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.

公开(公告)号：US20170018433A1

公开(公告)日：2017-01-19

申请号：US15186950

申请日：2016-06-20

Applicant: ASM International N.V.

Inventor： Viljami J. Pore ,  Suvi P. Haukka ,  Tom E. Blomberg ,  Eva E. Tois

IPC: H01L21/285 ,  H01L29/45 ,  H01L21/3213 ,  H01L29/66 ,  H01L21/321 ,  H01L21/3215

CPC classification number: H01L21/28518 ,  H01L21/28052 ,  H01L21/28568 ,  H01L21/321 ,  H01L21/32133 ,  H01L21/3215 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76886 ,  H01L29/456 ,  H01L29/665 ,  H01L29/78

Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. Nickel thin films can be used directly in silicidation and germanidation processes.

Abstract translation: 一方面，提供了硅化和锗化的方法。 在一些实施例中，用于形成金属硅化物的方法可包括在衬底的暴露的硅区上形成非氧化物界面，例如锗或固体锑。 在界面层上形成金属氧化物。 退火和还原使得来自金属氧化物的金属与下面的硅反应并形成金属硅化物。 另外，可以通过在锗上还原金属氧化物来形成金属锗化物，无论底层的硅是否也被硅化。 在其它实施例中，直接沉积镍，并且不使用界面层。 另一方面，提供了通过气相沉积工艺沉积镍薄膜的方法。 在一些实施例中，镍薄膜通过ALD沉积。 镍薄膜可以直接用于硅化和锗化工艺。