公开(公告)号：US20250110411A1

公开(公告)日：2025-04-03

申请号：US18900231

申请日：2024-09-27

Applicant: ASM IP Holding B.V.

Inventor： Kishan Ashokbhai Patel ,  Ikhlas Rahmat ,  Yoann Tomczak ,  David Kurt de Roest

IPC: G03F7/00 ,  C23C16/24 ,  C23C16/455 ,  G03F7/16 ,  H01L21/033

Abstract: A method for forming a pattern on a substrate disclosed. The method comprising, providing an Extreme Ultraviolet (EUV) lithography system having an exposure chamber, providing a substrate to the exposure chamber, the substrate comprising a patternable layer, the patternable layer comprising a photosensitive surface termination; and exposing the substrate to EUV radiation while exposing the patternable layer to a reactive gas, thereby forming a pattern on the patternable layer, comprising exposed areas and unexposed areas, the unexposed areas comprising the photosensitive surface termination and the exposed areas comprising an altered surface termination.

公开(公告)号：US20230333476A1

公开(公告)日：2023-10-19

申请号：US18133728

申请日：2023-04-12

Applicant: ASM IP Holding, B.V.

Inventor： Yoann Tomczak ,  Kishan Ashokbhai Patel ,  Charles Dezelah

IPC: G03F7/16 ,  H01L21/308 ,  H01L21/3065 ,  G03F7/20

CPC classification number: G03F7/16 ,  H01L21/308 ,  H01L21/3065 ,  G03F7/2004

Abstract: Methods and related systems for forming an EUV-sensitive layer. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a first precursor pulse and a second precursor pulse. The first precursor pulse comprises exposing the substrate to a first precursor. The first precursor comprises two or more acyl halide functional groups. The second precursor pulse comprises exposing the substrate to a second precursor. In some embodiments, the second precursor comprises two or more hydroxyl functional groups.

公开(公告)号：US20240339321A1

公开(公告)日：2024-10-10

申请号：US18624866

申请日：2024-04-02

Applicant: ASM IP Holding B.V.

Inventor： Kishan Ashokbhai Patel ,  Ikhlas Rahmat ,  Yoann Tomczak ,  Charles Dezelah ,  David Kurt de Roest

IPC: H01L21/027 ,  G03F7/004

CPC classification number: H01L21/0274 ,  G03F7/0042

Abstract: Structures, related methods, and related systems are disclosed. An embodiment of a structure comprises a resist and an inhibition layer. The EUV resist comprises exposed resist areas and unexposed resist areas. The inhibition layer inhibits the unexposed resist areas versus the exposed resist areas with respect to vapor phase deposition of a hard mask.

公开(公告)号：US20230324803A1

公开(公告)日：2023-10-12

申请号：US18131279

申请日：2023-04-05

Applicant: ASM IP Holding, B.V.

Inventor： Jan Deckers ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  David Kurt de Roest ,  Kishan Ashokbhai Patel ,  Yoann Tomczak

IPC: G03F7/16 ,  G03F7/075 ,  G03F7/40 ,  G03F7/004

CPC classification number: G03F7/167 ,  G03F7/0757 ,  G03F7/40 ,  G03F7/0042

Abstract: Gas-phase methods of forming radiation-sensitive, patternable material and systems for forming the material. Exemplary methods include gas-phase formation of a layer comprising a polymeric material that forms the radiation-sensitive, patternable material on a surface of the substrate. Portions of the layer comprising the polymeric material can be exposed to radiation or active species to form exposed and unexposed regions. Material can be selectively deposed onto the exposed or unexposed portions and/or one of the exposed and unexposed regions can be selectively removed. One or more method steps can be performed within a reaction chamber and/or a reactor system.

公开(公告)号：US20240302748A1

公开(公告)日：2024-09-12

申请号：US18595105

申请日：2024-03-04

Applicant: ASM IP Holding B.V.

Inventor： João Antunes Afonso ,  Steaphan Mark Wallace ,  Paul Chatelain ,  Kishan Ashokbhai Patel ,  Fatemeh Davodi

IPC: G03F7/11 ,  G03F7/00

CPC classification number: G03F7/11 ,  G03F7/0035 ,  G03F7/70033 ,  G03F7/70041 ,  G03F7/70933

Abstract: The disclosure generally relates to the field of semiconductor substrate processing technology, and more particularly to methods for depositing layers of materials on substrates, to structures formed accordingly, and for systems for executing such methods and for forming such structures. Aspects relate to a layer deposition process comprising the steps of forming an extreme ultraviolet (EUV) photoresist underlayer on a surface of a substrate; providing a substrate within a reactor chamber; providing a precursor comprising Sn and/or In to the reactor chamber thereby adsorbing the precursor on the surface of the substrate; and forming an EUV photoresist underlayer on the surface of the substrate within the reactor chamber by exposing the precursor adsorbed on the surface to a plasma, wherein the plasma comprises H2 as reactant and a noble gas as carrier gas.

公开(公告)号：US20240201596A1

公开(公告)日：2024-06-20

申请号：US18528314

申请日：2023-12-04

Applicant: ASM IP Holding B.V.

Inventor： Kishan Ashokbhai Patel ,  Yoann Tomczak ,  Charles Dezelah ,  Ivan Zyulkov ,  David Kurt De Roest ,  Michael Givens ,  Daniele Piumi

IPC: G03F7/16 ,  G03F7/004

CPC classification number: G03F7/167 ,  G03F7/0045 ,  G03F7/165

Abstract: Methods and related systems for forming an EUV sensitive film on a substrate. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a first deposition pulse and a second deposition pulse. The first precursor pulse comprises exposing the substrate to a first precursor. The first precursor comprises a metal precursor. The second precursor pulse comprises exposing the substrate to a second precursor. The second precursor comprises a heterocyclic organic compound.

公开(公告)号：US20230268179A1

公开(公告)日：2023-08-24

申请号：US18166879

申请日：2023-02-09

Applicant: ASM IP Holding, B.V.

Inventor： Yoann Tomczak ,  Kishan Ashokbhai Patel

IPC: H01L21/033

CPC classification number: H01L21/0337

Abstract: Methods for patterning and forming structures, as well as related structures and systems are disclosed. The methods comprise forming a liner on sidewalls of a patterned resist. The patterned resist comprises a first metal, and the liner comprises a second metal.