公开(公告)号：US20230059464A1

公开(公告)日：2023-02-23

申请号：US17818062

申请日：2022-08-08

Applicant: ASM IP Holding, B.V.

Inventor： Yoann Tomczak ,  Ivan Zyulkov ,  David Kurt de Roest ,  Michael Eugence Givens ,  Daniele Piumi ,  Charles Dezelah

IPC: H01L21/768 ,  H01L21/027 ,  G03F7/004 ,  G03F7/20

Abstract: Methods of forming patterned features on a surface of a substrate are disclosed. Exemplary methods include gas-phase formation of a layer comprising an oxalate compound on a surface of the substrate. Portions of the layer comprising the oxalate compound can be exposed to radiation or active species that form exposed and unexposed portions. Material can be selectively deposed onto the exposed or the unexposed portions.

公开(公告)号：US20230333476A1

公开(公告)日：2023-10-19

申请号：US18133728

申请日：2023-04-12

Applicant: ASM IP Holding, B.V.

Inventor： Yoann Tomczak ,  Kishan Ashokbhai Patel ,  Charles Dezelah

IPC: G03F7/16 ,  H01L21/308 ,  H01L21/3065 ,  G03F7/20

CPC classification number: G03F7/16 ,  H01L21/308 ,  H01L21/3065 ,  G03F7/2004

Abstract: Methods and related systems for forming an EUV-sensitive layer. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a first precursor pulse and a second precursor pulse. The first precursor pulse comprises exposing the substrate to a first precursor. The first precursor comprises two or more acyl halide functional groups. The second precursor pulse comprises exposing the substrate to a second precursor. In some embodiments, the second precursor comprises two or more hydroxyl functional groups.

公开(公告)号：US20210111025A1

公开(公告)日：2021-04-15

申请号：US17065925

申请日：2020-10-08

Applicant: ASM IP Holding B.V.

Inventor： Ivan Zyulkov ,  David Kurt de Roest ,  Yoann Tomczak ,  Michael Eugene Givens ,  Perttu Sippola ,  Tatiana Ivanova ,  Zecheng Liu ,  Bokheon Kim ,  Daniele Piumi

IPC: H01L21/033 ,  H01L21/027

Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

公开(公告)号：US20250110411A1

公开(公告)日：2025-04-03

申请号：US18900231

申请日：2024-09-27

Applicant: ASM IP Holding B.V.

Inventor： Kishan Ashokbhai Patel ,  Ikhlas Rahmat ,  Yoann Tomczak ,  David Kurt de Roest

IPC: G03F7/00 ,  C23C16/24 ,  C23C16/455 ,  G03F7/16 ,  H01L21/033

Abstract: A method for forming a pattern on a substrate disclosed. The method comprising, providing an Extreme Ultraviolet (EUV) lithography system having an exposure chamber, providing a substrate to the exposure chamber, the substrate comprising a patternable layer, the patternable layer comprising a photosensitive surface termination; and exposing the substrate to EUV radiation while exposing the patternable layer to a reactive gas, thereby forming a pattern on the patternable layer, comprising exposed areas and unexposed areas, the unexposed areas comprising the photosensitive surface termination and the exposed areas comprising an altered surface termination.

公开(公告)号：US20240419068A1

公开(公告)日：2024-12-19

申请号：US18740139

申请日：2024-06-11

Applicant: ASM IP Holding B.V.

Inventor： Daniele Piumi ,  David Kurt de Roest ,  Joäo Antunes Afonso ,  Steaphan Mark Wallace ,  Yoann Tomczak ,  Renè Henricus Jozef Vervuurt

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/11 ,  G03F7/16

Abstract: Structures and related systems and methods for dose reduction in extreme ultraviolet (EUV) lithography. The structures can comprise a dose reducing layer, an adhesion layer, and a resist.

公开(公告)号：US20240339321A1

公开(公告)日：2024-10-10

申请号：US18624866

申请日：2024-04-02

Applicant: ASM IP Holding B.V.

Inventor： Kishan Ashokbhai Patel ,  Ikhlas Rahmat ,  Yoann Tomczak ,  Charles Dezelah ,  David Kurt de Roest

IPC: H01L21/027 ,  G03F7/004

CPC classification number: H01L21/0274 ,  G03F7/0042

Abstract: Structures, related methods, and related systems are disclosed. An embodiment of a structure comprises a resist and an inhibition layer. The EUV resist comprises exposed resist areas and unexposed resist areas. The inhibition layer inhibits the unexposed resist areas versus the exposed resist areas with respect to vapor phase deposition of a hard mask.

公开(公告)号：US20240274313A1

公开(公告)日：2024-08-15

申请号：US18431164

申请日：2024-02-02

Applicant: ASM IP Holding B.V.

Inventor： Fatemeh Davodi ,  Steaphan Wallace ,  Yoann Tomczak ,  David Kurt de Roest

IPC: G21K1/06 ,  G03F7/00 ,  G03F7/11 ,  H01J37/32

CPC classification number: G21K1/06 ,  G03F7/0035 ,  G03F7/11 ,  G03F7/70033 ,  G03F7/7075 ,  H01J37/32146 ,  H01J2237/332

Abstract: Structures, related methods, and related systems for reducing EUV dose. A structure as described herein can comprise a substrate; an electron reflector layer overlying the substrate; and, an extreme ultraviolet (EUV) resist overlying an electron generation layer. The EUV resist is constructed and arranged for absorbing EUV radiation and generating secondary electrons. The electron reflector layer is constructed and arranged for reflecting secondary electrons generated by the EUV resist back towards the EUV resist.

公开(公告)号：US20230420256A1

公开(公告)日：2023-12-28

申请号：US18236051

申请日：2023-08-21

Applicant: ASM IP Holding B.V.

Inventor： Ivan Zyulkov ,  David Kurt de Roest ,  Yoann Tomczak ,  Michael Eugene Givens ,  Perttu Sippola ,  Tatiana Ivanova ,  Zecheng Liu ,  Bokheon Kim ,  Daniele Piumi

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/02 ,  H01L21/3105

CPC classification number: H01L21/0337 ,  H01L21/0332 ,  H01L21/0273 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/0228 ,  H01L21/02172 ,  H01L21/02205

Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

公开(公告)号：US20230324803A1

公开(公告)日：2023-10-12

申请号：US18131279

申请日：2023-04-05

Applicant: ASM IP Holding, B.V.

Inventor： Jan Deckers ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  David Kurt de Roest ,  Kishan Ashokbhai Patel ,  Yoann Tomczak

IPC: G03F7/16 ,  G03F7/075 ,  G03F7/40 ,  G03F7/004

CPC classification number: G03F7/167 ,  G03F7/0757 ,  G03F7/40 ,  G03F7/0042

Abstract: Gas-phase methods of forming radiation-sensitive, patternable material and systems for forming the material. Exemplary methods include gas-phase formation of a layer comprising a polymeric material that forms the radiation-sensitive, patternable material on a surface of the substrate. Portions of the layer comprising the polymeric material can be exposed to radiation or active species to form exposed and unexposed regions. Material can be selectively deposed onto the exposed or unexposed portions and/or one of the exposed and unexposed regions can be selectively removed. One or more method steps can be performed within a reaction chamber and/or a reactor system.

公开(公告)号：US20230091094A1

公开(公告)日：2023-03-23

申请号：US17900578

申请日：2022-08-31

Applicant: ASM IP Holding B.V.

Inventor： Hannu Huotari ,  Daniele Piumi ,  Yoann Tomczak ,  Ivan Zyulkov ,  Charles Dezelah ,  Arpita Saha ,  David de Roest ,  Jerome Innocent ,  Michael Givens ,  Monica Thukkaram

IPC: G03F7/11 ,  G03F7/16

Abstract: Methods of forming structures including a photoresist absorber layer and structures including the photoresist absorber layer are disclosed. Exemplary methods include forming the photoresist absorber layer that includes at least two elements having an EUV cross section (σα) of greater than 2×106 cm2/mol.