公开(公告)号：US10395921B2

公开(公告)日：2019-08-27

申请号：US15080004

申请日：2016-03-24

Applicant: ASM IP Holding B.V.

Inventor： Young Hoon Kim ,  Dae Youn Kim ,  Seung Woo Choi ,  Hyung Wook Noh ,  Yong Min Yoo ,  Hak Joo Lee

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/52 ,  C23C16/458

Abstract: Provided is a method of forming a thin film having a target thickness T on a substrate by an atomic layer deposition (ALD) method. The method includes n processing conditions each having a film growth rate that is different from the others, and determining a1 to an that are cycles of a first processing condition to an n-th processing condition so that a value of |T−(a1×G1+a2×G2+ . . . +an×Gn)| is less than a minimum value among G1, G2, . . . , and Gn, where n is 2 or greater integer, G1, . . . , and Gn respectively denote a first film growth rate that is a film growth rate of the first processing condition, . . . and an n-th film growth rate that is a film growth rate of the n-th processing condition, and the film growth rate denotes a thickness of a film formed per a unit cycle in each of the processing conditions. The film forming method may precisely and uniformly control a thickness of the thin film when an ALD is performed.

公开(公告)号：US10364493B2

公开(公告)日：2019-07-30

申请号：US15672063

申请日：2017-08-08

Applicant: ASM IP Holding B.V.

Inventor： Hak Joo Lee ,  Dae Youn Kim ,  Seung Wook Kim ,  Jin Seok Park ,  Jae Hyun Kim

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/34 ,  H01J37/32

Abstract: An exhaust apparatus using a gas curtain instead of a mechanical opening/closing structure is provided. The exhaust apparatus includes: a first region; a second region connected to the first region; a third region connected to the first region; and a first gas line connected to the second region, wherein when gas is supplied to the first gas line, the first region does not communicate with the second region but communicates with the third region.

公开(公告)号：USD913980S1

公开(公告)日：2021-03-23

申请号：US29726623

申请日：2020-03-04

Applicant: ASM IP Holding B.V.

Designer： Hak Joo Lee ,  Jeong Jun Woo ,  Jong Hyun Ahn ,  Yoon Ki Min

公开(公告)号：US20180057937A1

公开(公告)日：2018-03-01

申请号：US15672063

申请日：2017-08-08

Applicant: ASM IP Holding B.V.

Inventor： Hak Joo Lee ,  Dae Youn Kim ,  Seung Wook Kim ,  Jin Seok Park ,  Jae Hyun Kim

IPC: C23C16/44 ,  C23C16/455

CPC classification number: C23C16/4412 ,  C23C16/345 ,  C23C16/455 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/45561 ,  H01J37/32449 ,  H01J37/32513 ,  H01J37/32834

Abstract: An exhaust apparatus using a gas curtain instead of a mechanical opening/closing structure is provided. The exhaust apparatus includes: a first region; a second region connected to the first region; a third region connected to the first region; and a first gas line connected to the second region, wherein when gas is supplied to the first gas line, the first region does not communicate with the second region but communicates with the third region.

公开(公告)号：US20160284534A1

公开(公告)日：2016-09-29

申请号：US15080004

申请日：2016-03-24

Applicant: ASM IP Holding B.V.

Inventor： Young Hoon Kim ,  Dae Youn Kim ,  Seung Woo Choi ,  Hyung Wook Noh ,  Yong Min Yoo ,  Hak Joo Lee

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/4584 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274

Abstract: Provided is a method of forming a thin film having a target thickness T on a substrate by an atomic layer deposition (ALD) method. The method includes n processing conditions each having a film growth rate that is different from the others, and determining a1 to an that are cycles of a first processing condition to an n-th processing condition so that a value of |T−(a1×G1+a2×G2+ . . . +an×Gn)| is less than a minimum value among G1, G2, . . . , and Gn, where n is 2 or greater integer, G1, . . . , and Gn respectively denote a first film growth rate that is a film growth rate of the first processing condition, . . . and an n-th film growth rate that is a film growth rate of the n-th processing condition, and the film growth rate denotes a thickness of a film formed per a unit cycle in each of the processing conditions. The film forming method may precisely and uniformly control a thickness of the thin film when an ALD is performed.

Abstract translation: 提供了通过原子层沉积（ALD）方法在基板上形成具有目标厚度T的薄膜的方法。 该方法包括n个处理条件，每个处理条件各自具有不同于其的成长速率，并将a1确定为第一处理条件到第n处理条件的循环，使得| T（a1× G1 + a2×G2 + ... + an×Gn）| 小于G1，G2中的最小值。 。 。 和Gn，其中n是2或更大的整数，G1，...。 。 。 ，Gn分别表示作为第一处理条件的膜生长速度的第一膜生长速度。 。 。 以及作为第n处理条件的膜生长速度的第n膜生长速度，膜生长率表示在每个处理条件下每单位周期形成的膜的厚度。 当执行ALD时，成膜方法可以精确且均匀地控制薄膜的厚度。