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1.发明授权公开(公告)号：US12093632B2
公开(公告)日：2024-09-17
申请号：US17950502
申请日：2022-09-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Marinus Aart Van Den Brink , Yu Cao , Yi Zou
IPC: G06F30/398 , G06F30/392 , G06F119/18
CPC classification number: G06F30/398 , G06F30/392 , G06F2119/18
Abstract: A method for calibrating a process model and training an inverse process model of a patterning process. The training method includes obtaining a first patterning device pattern from simulation of an inverse lithographic process that predicts a patterning device pattern based on a wafer target layout, receiving wafer data corresponding to a wafer exposed using the first patterning device pattern, and training an inverse process model configured to predict a second patterning device pattern using the wafer data related to the exposed wafer and the first patterning device pattern.
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公开(公告)号：US20240186107A1
公开(公告)日：2024-06-06
申请号：US18411525
申请日：2024-01-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Bernardo KASTRUP , Johannes Catharinus Hubertus Mulkens , Marinus Aart Van Den Brink , Jozef Petrus Henricus Benschop , Erwin Paul Smakman , Tamara Druzhinina , Coen Adrianus Verschuren
CPC classification number: H01J37/263 , H01J37/023 , H01J37/15 , H01J37/22 , H01J37/244 , H01J37/28 , H01J2237/0245 , H01J2237/2817
Abstract: An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.
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公开(公告)号：USRE46933E1
公开(公告)日：2018-07-03
申请号：US14715314
申请日：2015-05-18
Applicant: ASML NETHERLANDS B.V.
CPC classification number: G03F7/70733 , G03F7/70341
Abstract: The invention relates to a dual stage lithographic apparatus, wherein two substrate stages are constructed and arranged for mutual cooperation in order to perform a joint scan movement. The joint scan movement brings the lithographic apparatus from a first configuration, wherein immersion liquid is confined between a first substrate held by the first stage of the stages and a projection system of the apparatus, to a second configuration, wherein the immersion liquid is confined between a second substrate held by the second stage of the two stages and the projection system, such that during the joint scan movement the liquid is essentially confined within the space with respect to the projection system.
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公开(公告)号：US12099306B2
公开(公告)日：2024-09-24
申请号：US17441168
申请日：2020-02-20
Applicant: ASML Netherlands B.V.
Inventor： Oscar Franciscus Jozephus Noordman , Antonius Theodorus Wilhelmus Kempen , Jan Bernard Plechelmus Van Schoot , Marinus Aart Van Den Brink
IPC: G03F7/00
CPC classification number: G03F7/70033 , G03F7/70425 , G03F7/70558
Abstract: A lithographic system comprises a radiation source and a lithographic apparatus. The radiation source provides radiation to the lithographic apparatus. The lithographic apparatus uses the radiation for imaging a pattern onto multiple target areas on a layer of photo-resist on a semiconductor substrate. The imaging requires a pre-determined dose of radiation. The system is controlled so as to set a level of a power of the radiation in dependence on a magnitude of the pre-determined dose.
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公开(公告)号：US11094502B2
公开(公告)日：2021-08-17
申请号：US16064193
申请日：2016-12-09
Applicant: ASML NETHERLANDS B.V.
Inventor： Bernardo Kastrup , Johannes Catharinus Hubertus Mulkens , Marinus Aart Van Den Brink , Jozef Petrus Henricus Benschop , Erwin Paul Smakman , Tamara Druzhinina , Coen Adrianus Verschuren
Abstract: An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns. The actuator system may include a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.
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Patent Agency Ranking
公开(公告)号：US10268128B2
公开(公告)日：2019-04-23
申请号：US15742168
申请日：2016-06-14
Applicant: ASML Netherlands B.V.
Inventor： Franciscus Johannes Joseph Janssen , Johannes Paul Marie De La Rosette , Edwin Cornelis Kadijk , Nicolas Alban Lallemant , Jan Liefooghe , Markus Rolf Werner Matthes , Marcel Johannus Elisabeth Hubertus Muitjens , Hubert Matthieu Richard Steijns , André Gillis Van De Velde , Marinus Aart Van Den Brink
IPC: G03F7/20 , H01S3/036 , H01S3/04 , H01S3/041 , H01S3/23 , H05G2/00 , F28C1/08 , H01S3/038 , H01S3/223
Abstract: A lithographic apparatus comprising an illumination system configured to condition a radiation beam, a support structure constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, a substrate table constructed to hold a substrate, and a projection system configured to project the patterned radiation beam onto the substrate, the lithographic apparatus being provided with a first cooling fluid circuit which is configured to cool components to a first temperature, and provided with a second cooling fluid circuit which is configured to cool components to a second temperature that is lower than the first temperature.
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公开(公告)号：US11875966B2
公开(公告)日：2024-01-16
申请号：US17403006
申请日：2021-08-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Bernardo Kastrup , Johannes Catharinus Hubertus Mulkens , Marinus Aart Van Den Brink , Jozef Petrus Henricus Benschop , Erwin Paul Smakman , Tamara Druzhinina , Coen Adrianus Verschuren
CPC classification number: H01J37/263 , H01J37/023 , H01J37/15 , H01J37/22 , H01J37/244 , H01J37/28 , H01J2237/0245 , H01J2237/2817
Abstract: An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.
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8.发明申请公开(公告)号：US20230013919A1
公开(公告)日：2023-01-19
申请号：US17950502
申请日：2022-09-22
Applicant: ASML Netherlands B.V.
Inventor： Marinus Aart Van Den Brink , Yu Cao , Yi Zou
IPC: G06F30/398 , G06F30/392
Abstract: A method for calibrating a process model and training an inverse process model of a patterning process. The training method includes obtaining a first patterning device pattern from simulation of an inverse lithographic process that predicts a patterning device pattern based on a wafer target layout, receiving wafer data corresponding to a wafer exposed using the first patterning device pattern, and training an inverse process model configured to predict a second patterning device pattern using the wafer data related to the exposed wafer and the first patterning device pattern.
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公开(公告)号：USRE45576E1
公开(公告)日：2015-06-23
申请号：US13970429
申请日：2013-08-19
Applicant: ASML NETHERLANDS B.V.
CPC classification number: G03F7/70733 , G03F7/70341
Abstract: The invention relates to a dual stage lithographic apparatus, wherein two substrate stages are constructed and arranged for mutual cooperation in order to perform a joint scan movement. The joint scan movement brings the lithographic apparatus from a first configuration, wherein immersion liquid is confined between a first substrate held by the first stage of the stages and a projection system of the apparatus, to a second configuration, wherein the immersion liquid is confined between a second substrate held by the second stage of the two stages and the projection system, such that during the joint scan movement the liquid is essentially confined within the space with respect to the projection system.
Abstract translation: 本发明涉及一种双级光刻设备，其中构造和布置两个基板台以进行相互配合以进行联合扫描运动。 联合扫描运动使平版印刷设备从第一配置中获得，其中将浸没液体限制在由第一级保持的第一基板和设备的投影系统之间，其中浸没液体被限制在第二配置之间 由两级的第二级保持的第二衬底和投影系统，使得在联合扫描运动期间，液体基本上被限制在相对于投影系统的空间内。
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10.发明授权公开(公告)号：US11544440B2
公开(公告)日：2023-01-03
申请号：US15734141
申请日：2019-05-23
Applicant: ASML NETHERLANDS B.V.
Inventor： Marinus Aart Van Den Brink , Yu Cao , Yi Zou
IPC: G06F30/398 , G06F30/392 , G06F119/18
Abstract: A method for calibrating a process model and training an inverse process model of a patterning process. The training method includes obtaining a first patterning device pattern from simulation of an inverse lithographic process that predicts a patterning device pattern based on a wafer target layout, receiving wafer data corresponding to a wafer exposed using the first patterning device pattern, and training an inverse process model configured to predict a second patterning device pattern using the wafer data related to the exposed wafer and the first patterning device pattern.
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