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1.发明授权公开(公告)号：US11747738B2
公开(公告)日：2023-09-05
申请号：US16314805
申请日：2017-06-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Coen Adrianus Verschuren , Erwin Paul Smakman
CPC classification number: G03F7/70291 , G03F7/70383 , G03F7/70433 , G03F7/70508
Abstract: A direct write exposure apparatus configured to process a plurality of substrates, the apparatus including: a substrate holder configured to hold a substrate having a usable patterning area; a patterning system configured to project different patterns onto the substrate; a processing system configured to: determine a first combination of one or more patterns that are to be applied on a first substrate of the plurality of substrates; and determine a second, different combination of one or more patterns that are to be applied on a second, subsequent, substrate of the plurality of substrates.
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公开(公告)号：US11875966B2
公开(公告)日：2024-01-16
申请号：US17403006
申请日：2021-08-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Bernardo Kastrup , Johannes Catharinus Hubertus Mulkens , Marinus Aart Van Den Brink , Jozef Petrus Henricus Benschop , Erwin Paul Smakman , Tamara Druzhinina , Coen Adrianus Verschuren
CPC classification number: H01J37/263 , H01J37/023 , H01J37/15 , H01J37/22 , H01J37/244 , H01J37/28 , H01J2237/0245 , H01J2237/2817
Abstract: An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.
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公开(公告)号：US10527950B2
公开(公告)日：2020-01-07
申请号：US16314740
申请日：2017-06-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Erwin Paul Smakman , Coen Adrianus Verschuren
Abstract: An exposure apparatus including: a substrate holder constructed to support a substrate; a patterning device configured to provide radiation modulated according to a desired pattern, the patterning device including an array of radiation source modules configured to project the modulated radiation onto a respective array of exposure regions on the substrate; and a distributed processing system configured to process projection related data to enable the projection of the desired pattern onto the substrate, the distributed processing system including at least one central processing unit and a plurality of module processing units each associated with a respective radiation source module.
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公开(公告)号：US12165836B2
公开(公告)日：2024-12-10
申请号：US17770043
申请日：2020-10-15
Applicant: ASML NETHERLANDS B.V.
Inventor： Maikel Robert Goosen , Erwin Paul Smakman
IPC: H01J37/22 , H01J37/244 , H01J37/26 , H01J37/28
Abstract: Systems and methods of profiling a charged-particle beam are disclosed. The method of profiling a charged-particle beam may comprise activating a charged-particle source to generate the charged-particle beam along a primary optical axis, modifying the charged-particle beam by adjusting an interaction between the charged-particle beam and a standing optical wave, detecting charged particles from the modified charged-particle beam after the interaction with the standing optical wave, and determining a profile of the charged-particle beam based on the detected charged particles. Alternatively, the method may include activating an optical source, modifying the optical beam by adjusting an interaction between the optical beam and a charged-particle beam, detecting an optical signal from the modified optical beam, and determining a characteristic of the charged-particle beam based on the detected optical signal.
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公开(公告)号：US20240186107A1
公开(公告)日：2024-06-06
申请号：US18411525
申请日：2024-01-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Bernardo KASTRUP , Johannes Catharinus Hubertus Mulkens , Marinus Aart Van Den Brink , Jozef Petrus Henricus Benschop , Erwin Paul Smakman , Tamara Druzhinina , Coen Adrianus Verschuren
CPC classification number: H01J37/263 , H01J37/023 , H01J37/15 , H01J37/22 , H01J37/244 , H01J37/28 , H01J2237/0245 , H01J2237/2817
Abstract: An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.
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Patent Agency Ranking
公开(公告)号：US11881374B2
公开(公告)日：2024-01-23
申请号：US17430307
申请日：2020-02-04
Applicant: ASML Netherlands B.V.
Inventor： Shakeeb Bin Hasan , Yan Ren , Maikel Robert Goosen , Albertus Victor Gerardus Mangnus , Erwin Paul Smakman
CPC classification number: H01J37/04 , H01J37/28 , H01J2237/028
Abstract: Disclosed among other aspects is a charged particle inspection system including an absorbing component and a programmable charged-particle mirror plate arranged to modify the energy distribution of electrons in a beam and shape the beam to reduce the energy spread of the electrons and aberrations of the beam, with the absorbing component including a set of absorbing structures configured as absorbing structures provided on a transparent conductive layer and a method using such an absorbing component and with the programmable charged-particle mirror plate including a set of pixels configured to generate a customized electric field to shape the beam and using such a programmable charged-particle mirror plate.
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公开(公告)号：US10712669B2
公开(公告)日：2020-07-14
申请号：US16064366
申请日：2016-12-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Erwin Paul Smakman , Coen Adrianus Verschuren
Abstract: A method and apparatus to provide a plurality of radiation beams modulated according to at least two sub patterns of a pattern using radiation sources, the radiation sources producing radiation beams of at least two spot sizes such that each of the radiation beams having a same spot size of the at least two spot sizes is used to produce one of the at least two sub patterns, project the plurality of beams onto a substrate, and provide relative motion between the substrate and the plurality of radiation sources, in a scanning direction to expose the substrate. A method and apparatus to provide radiation modulated according to a desired pattern using a plurality of rows of two-dimensional arrays of radiation sources, project the modulated radiation onto a substrate using a projection system, and remove fluid from between the projection system and the substrate using one or more fluid removal units.
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公开(公告)号：US11942302B2
公开(公告)日：2024-03-26
申请号：US17361119
申请日：2019-12-17
Applicant: ASML Netherlands B.V.
Inventor： Arno Jan Bleeker , Pieter Willem Herman De Jager , Maikel Robert Goosen , Erwin Paul Smakman , Albertus Victor Gerardus Mangnus , Yan Ren , Adam Lassise
IPC: H01J37/09 , H01J37/147 , H01J37/244 , H01J37/26 , H01J37/28
CPC classification number: H01J37/1474 , H01J37/244 , H01J37/265 , H01J37/28 , H01J2237/24475 , H01J2237/2448 , H01J2237/2817
Abstract: Apparatuses and methods for charged-particle detection may include a deflector system configured to direct charged-particle pulses, a detector having a detection element configured to detect the charged-particle pulses, and a controller having a circuitry configured to control the deflector system to direct a first and second charged-particle pulses to the detection element; obtain first and second timestamps associated with when the first charged-particle pulse is directed by the deflector system and detected by the detection element, respectively, and third and fourth timestamps associated with when the second charged-particle pulse is directed by the deflector system and detected by the detection element, respectively; and identify a first and second exiting beams based on the first and second timestamps, and the third and fourth timestamps, respectively.
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公开(公告)号：US11791132B2
公开(公告)日：2023-10-17
申请号：US16830204
申请日：2020-03-25
Applicant: ASML Netherlands B.V.
IPC: H01J37/317 , H01J37/24 , H01J37/244 , H01J37/304
CPC classification number: H01J37/3177 , H01J37/243 , H01J37/244 , H01J37/3045 , H01J2237/0435
Abstract: Systems and methods of measuring beam current in a multi-beam apparatus are disclosed. The multi-beam apparatus may include a charged-particle source configured to generate a primary charged-particle beam, and an aperture array. The aperture array may comprise a plurality of apertures configured to form a plurality of beamlets from the primary charged-particle beam, and a detector including circuitry to detect a current of at least a portion of the primary charged-particle beam irradiating the aperture array. The method of measuring beam current may include irradiating the primary charged-particle beam on the aperture array and detecting an electric current of at least a portion of the primary charged-particle beam.
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公开(公告)号：US11243179B2
公开(公告)日：2022-02-08
申请号：US16652231
申请日：2018-10-01
Applicant: ASML NETHERLANDS B.V.
IPC: G01N23/2251 , G01B15/00 , G03F7/20 , H01J37/065 , H01J37/073 , H01J37/22 , H01J37/28
Abstract: An inspection method for a substrate, the inspection method including: providing an electron beam having a first polarization state to a sample of the semiconductor substrate; detecting a first response signal of the sample caused by interaction of the electron beam having the first polarization state with the sample; providing an electron beam having a second polarization state to the sample of the semiconductor substrate; detecting a second response signal of the sample caused by interaction of the electron beam having the second polarization state with the sample; and determining a geometric or material property of the sample, based on the first response signal and the second response signal.
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