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    Method of simulating formation of lithography features by self-assembly of block copolymers
    1.
    发明授权
    Method of simulating formation of lithography features by self-assembly of block copolymers 有权

    公开(公告)号：US10127336B2

    公开(公告)日：2018-11-13

    申请号：US14890867

    申请日：2014-05-05

    Applicant: ASML Netherlands B.V.

    Inventor： Sander Frederik Wuister ,  Tamara Druzhinina ,  Jan Van Male ,  Joanne Klein-Wolterink ,  Davide Ambesi

    IPC: G06F17/50 ,  G06F7/00 ,  G03F7/00

    Abstract: A method of determining an uncertainty in the position of a domain within a self-assembly block copolymer (BCP) feature. The method includes simulating a BCP feature, calculating a minimum energy position of a first domain within the simulated BCP feature, simulating the application of a potential that causes the position of the first domain to be displaced from the minimum energy position, simulating release of the potential back toward the minimum energy, recording a plurality of energies of the BCP feature during the release and recording at each of the plurality of energies a displacement of the first domain from the minimum energy position, calculating, from the recorded energies and recorded displacements, a probability distribution indicating a probability of the first domain being displaced from the minimum energy position, and, from the probability distribution, calculating an uncertainty in the position of the first domain within the BCP feature.

    Methods for providing spaced lithography features on a substrate by self-assembly of block copolymers
    3.
    发明授权
    Methods for providing spaced lithography features on a substrate by self-assembly of block copolymers 有权
    通过嵌段共聚物的自组装在基材上提供间隔光刻特征的方法

    公开(公告)号：US09368366B2

    公开(公告)日：2016-06-14

    申请号：US14764133

    申请日：2014-01-24

    Applicant: ASML Netherlands B.V.

    Inventor： Sander Frederik Wuister ,  Tamara Druzhinina ,  Mircea Dusa

    IPC: H01L21/30 ,  H01L21/308 ,  G03F7/00 ,  H01L21/027 ,  H01L21/033 ,  H01L29/66 ,  H01L29/775 ,  H01L29/06 ,  B82Y10/00 ,  G03F1/50 ,  G03F1/80 ,  H01L29/78

    CPC classification number: H01L21/3086 ,  B82Y10/00 ,  G03F1/50 ,  G03F1/80 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0337 ,  H01L29/0673 ,  H01L29/66439 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/785

    Abstract: A method of forming a plurality of regularly spaced lithography features, the method including providing a self-assemblable block copolymer having first and second blocks in a plurality of trenches on a substrate, each trench including opposing side-walls and a base, with the side-walls having a width therebetween, wherein a first trench has a greater width than a second trench; causing the self-assemblable block copolymer to self-assemble into an ordered layer in each trench, the layer having a first domain of the first block alternating with a second domain of the second block, wherein the first and second trenches have the same number of each respective domain; and selectively removing the first domain to form regularly spaced rows of lithography features having the second domain along each trench, wherein the pitch of the features in the first trench is greater than the pitch of the features in the second trench.

    Abstract translation: 一种形成多个规则间隔的光刻特征的方法，所述方法包括提供在衬底上的多个沟槽中具有第一和第二块的自组装嵌段共聚物，每个沟槽包括相对的侧壁和底部， 在其间具有宽度的壁，其中第一沟槽具有比第二沟槽更大的宽度; 使得所述自组装嵌段共聚物自组装成每个沟槽中的有序层，所述层具有所述第一嵌段的第一区域与所述第二嵌段的第二区域交替，其中所述第一和第二沟槽具有相同数量的 各个域; 并且选择性地移除所述第一区域以形成沿着每个沟槽具有所述第二区域的规则间隔的光刻特征行，其中所述第一沟槽中的所述特征的间距大于所述第二沟槽中的所述特征的间距。

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