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公开(公告)号:US20240231115A9
公开(公告)日:2024-07-11
申请号:US17768851
申请日:2020-09-30
Applicant: ASML Netherlands B.V.
Inventor: Zili ZHOU , Janneke RAVENSBERGEN
IPC: G02B27/09
CPC classification number: G02B27/0927 , G02B27/0944 , G02B27/0994
Abstract: Disclosed is a pupil shaping arrangement for obtaining a defined pupil intensity profile for a metrology illumination beam configured for use in a metrology application. The pupil shaping arrangement comprises an engineered diffuser (ED) having a defined far-field profile configured to impose said defined pupil intensity profile on said metrology illumination beam. The pupil shaping arrangement may further comprise a multimode fiber (MMF) and be configured to reduce spatial coherence of coherent radiation.
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公开(公告)号:US20230229094A1
公开(公告)日:2023-07-20
申请号:US18151334
申请日:2023-01-06
Applicant: ASML Netherlands B.V.
Inventor: Simon Reinald HUISMAN , Arjan Johannes Anton BEUKMAN , Arie Jeffrey DEN BOEF , Sebastianus Adrianus GOORDEN , Nitish KUMAR , Jin LIAN , Zili ZHOU
CPC classification number: G03F9/7065 , G02B26/0833 , G02B27/283 , G03F7/70575 , G03F7/70616
Abstract: Disclosed is an illumination arrangement for spectrally shaping a broadband illumination beam to obtain a spectrally shaped illumination beam. The illumination arrangement comprises a beam dispersing element for dispersing the broadband illumination beam and a spatial light modulator for spatially modulating the broadband illumination beam subsequent to being dispersed. The illumination arrangement further comprises at least one of a beam expanding element for expanding said broadband illumination beam in at least one direction, located between an input of the illumination arrangement and the spatial light modulator; and a lens array, each lens of which for directing a respective wavelength band of the broadband illumination beam subsequent to being dispersed onto a respective region of the spatial light modulator.
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公开(公告)号:US20240134208A1
公开(公告)日:2024-04-25
申请号:US17768851
申请日:2020-09-29
Applicant: ASML Netherlands B.V.
Inventor: Zili ZHOU , Janneke RAVENSBERGEN
IPC: G02B27/09
CPC classification number: G02B27/0927 , G02B27/0944 , G02B27/0994
Abstract: Disclosed is a pupil shaping arrangement for obtaining a defined pupil intensity profile for a metrology illumination beam configured for use in a metrology application. The pupil shaping arrangement comprises an engineered diffuser (ED) having a defined far-field profile configured to impose said defined pupil intensity profile on said metrology illumination beam. The pupil shaping arrangement may further comprise a multimode fiber (MMF) and be configured to reduce spatial coherence of coherent radiation.
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公开(公告)号:US20210255553A1
公开(公告)日:2021-08-19
申请号:US17306670
申请日:2021-05-03
Applicant: ASML Netherlands B.V.
Inventor: Zili ZHOU , Nitesh PANDEY , Olger Victor ZWIER , Patrick WARNAAR , Maurits VAN DER SCHAAR , Elliott Gerard MC NAMARA , Arie Jeffrey DEN BOEF , Paul Christiaan HINNEN , Murat BOZKURT , Joost Jeroen OTTENS , Kaustuve BHATTACHARYYA , Michael KUBIS
IPC: G03F7/20 , G01N21/47 , G01N21/95 , G01N21/956 , G03F9/00
Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shifht (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.
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公开(公告)号:US20240085379A1
公开(公告)日:2024-03-14
申请号:US18268467
申请日:2021-12-15
Applicant: ASML Netherlands B.V.
Inventor: Mustafa Ümit ARABUL , Zili ZHOU , Willem Marie,Julia,Marcel COENE , Coen Adrianus VERSCHUREN , Paul, Louis,Maria Joseph VAN NEER , Daniele PIRAS , Sandra BLAAK , Wouter Dick KOEK , Robert Wilhelm WILLEKERS
CPC classification number: G01N29/04 , G01N29/262 , G01N29/28 , G01N2291/023 , G01N2291/106
Abstract: A metrology apparatus for determining one or more parameters of a structure fabricated in or on a semiconductor substrate. The apparatus comprises a transducer array comprising a plurality of transducers positioned in a plane. The plurality of transducers comprises at least one transmitter transducer for emitting acoustic radiation in a frequency range from 1 GHz to 100 GHz towards the structure, and at least one receiver transducer for receiving acoustic radiation reflected and/or diffracted from the structure.
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6.
公开(公告)号:US20220283122A1
公开(公告)日:2022-09-08
申请号:US17634711
申请日:2020-07-22
Applicant: ASML Netherlands B.V.
Inventor: Zili ZHOU , Mustafa ümit ARABUL , Coen Adrianus VERSCHUREN
Abstract: The disclosure relates to determining information about a target structure formed on a substrate using a lithographic process. In one arrangement, a cantilever probe is provided having a cantilever arm and a probe element. The probe element extends from the cantilever arm towards the target structure. Ultrasonic waves are generated in the cantilever probe. The ultrasonic waves propagate through the probe element into the target structure and reflect back from the target structure into the probe element or into a further probe element extending from the cantilever arm. The reflected ultrasonic waves are detected and used to determine information about the target structure.
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公开(公告)号:US20190294054A1
公开(公告)日:2019-09-26
申请号:US16441832
申请日:2019-06-14
Applicant: ASML Netherlands B.V.
Inventor: Nitesh PANDEY , Zili ZHOU
IPC: G03F7/20
Abstract: Methods of measuring a target formed by a lithographic process, a metrology apparatus and a polarizer assembly are disclosed. The polarizer assembly comprises a polarizing structure having a substantially planar form and configured to polarize radiation passing there through in a circular polarizing region. The circular polarizing region is configured to apply a first polarization to radiation passing through a first one of two pairs of diametrically opposite quadrants of the circular polarizing region and to apply a second polarization, orthogonal to the first polarization, to radiation passing through a second one of two pairs of diametrically opposite quadrants of the circular polarizing region.
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8.
公开(公告)号:US20190250094A1
公开(公告)日:2019-08-15
申请号:US16268564
申请日:2019-02-06
Applicant: ASML NETHERLANDS B.V.
Inventor: Nitesh PANDEY , Zili ZHOU , Gerbrand VAN DER ZOUW , Arie Jeffrey DEN BOEF , Markus Gerardus Martinus Maria VAN KRAAIJ , Armand Eugene Albert KOOLEN , Hugo Augustinus Joseph CRAMER , Paul Christiaan HINNEN , Martinus Hubertus Maria VAN WEERT , Anagnostis TSIATMAS , Shu-jin WANG , Bastiaan Onne FAGGINGER AUER , Alok VERMA
CPC classification number: G01N21/21 , G01N21/8806 , G01N2021/8848 , G03F7/70191 , G03F7/70616 , G03F7/70625 , G03F7/70633
Abstract: An inspection apparatus, method, and system are described herein. An example inspection apparatus includes an optical system and an imaging system. The optical system may be configured to output an illumination beam incident on a target including one or more features, the illumination beam polarized with a first polarization when incident on the target. The imaging system may be configured to obtain intensity data representing at least a portion of the illumination beam scattered by the one or more features, where the portion of the illumination beam has a second polarization orthogonal to the first polarization. The inspection apparatus may be further configured to generate image data representing an image of each of the feature(s) based on the intensity data, and determine a measurement of a parameter of interest associated with the feature(s) based on an amount of the portion of the illumination beam having the second polarization.
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公开(公告)号:US20250067768A1
公开(公告)日:2025-02-27
申请号:US18724551
申请日:2022-12-22
Applicant: ASML Netherlands B.V.
Inventor: Mustafa Ümit ARABUL , Zili ZHOU , Nitesh PANDEY , Coen Adrianus VERSCHUREN , Willem Marie Julia Marcel COENE , Gerard Jan VERBIEST , Peter Gerard STEENEKEN , Martin Pierre ROBIN
Abstract: The disclosure relates to determining information about a target structure formed on a substrate using a lithographic process. In one arrangement, a cantilever probe is provided having a cantilever arm and a probe element. The probe element extends from the cantilever arm towards the target structure. Ultrasonic waves are generated in the cantilever probe. The ultrasonic waves propagate through the probe element into the target structure and reflect back from the target structure into the probe element or into a further probe element extending from the cantilever arm. The reflected ultrasonic waves are detected and used to determine information about the target structure.
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公开(公告)号:US20240288782A1
公开(公告)日:2024-08-29
申请号:US18289765
申请日:2022-05-02
Applicant: ASML NETHERLANDS B.V.
Inventor: Zili ZHOU , Daan SWINKELS , Jin LIAN
IPC: G03F7/00
CPC classification number: G03F7/706849 , G03F7/70633 , G03F7/70641 , G03F7/706831 , G03F7/706837 , G03F7/706845 , G03F7/706851
Abstract: A method of measuring an overlay or focus parameter from a target and associated metrology apparatus. The method includes configuring measurement radiation to obtain a configured measurement spectrum of the measurement radiation by: imposing an intensity weighting on individual wavelength bands of the measurement radiation such that the individual wavelength bands have an intensity according to the intensity weighting, the intensity weighting being such that a measured value for the overlay or focus parameter is at least partially corrected for the effect of target imperfections; and/or imposing a modulation on a measurement spectrum of the measurement radiation. The configured measurement radiation is used to measure the target. A value for the overlay or focus parameter is determined from scattered radiation resultant from measurement of the target.
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