公开(公告)号：US20190323972A1

公开(公告)日：2019-10-24

申请号：US16385651

申请日：2019-04-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Samee Ur REHMAN ,  Anagnostis TSIATMAS ,  Sergey TARABRIN ,  Joannes Jitse VENSELAAR ,  Alexandru ONOSE ,  Mariya Vyacheslavivna MEDVEDYEVA

IPC: G01N21/95 ,  G01N21/956

Abstract: Methods of determining a value of a parameter of interest are disclosed. In one arrangement, a symmetric component and an asymmetric component of a detected pupil representation from illuminating a target are derived. A first metric characterizing the symmetric component and a second metric characterizing the asymmetric component vary non-monotonically as a function of the parameter of interest over a reference range of values of the parameter of interest. A combination of the derived symmetric component and the derived asymmetric component are used to identify a correct value from a plurality of candidate values of the parameter of interest.

公开(公告)号：US20230017491A1

公开(公告)日：2023-01-19

申请号：US17784566

申请日：2020-12-03

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

Inventor： Patricius Aloysius Jacobus TINNEMANS ,  Igor Matheus Petronalla AARTS ,  Kaustuve BHATTACHARYYA ,  Ralph BRINKHOF ,  Leendert Jan KARSSEMEIJER ,  Stefan Carolus Jacobus A KEIJ ,  Haico Victor KOK ,  Simon Gijsbert Josephus MATHIJSSEN ,  Henricus Johannes Lambertu MEGENS ,  Samee Ur REHMAN

IPC: G03F7/20 ,  G03F9/00

Abstract: A metrology method relating to measurement of a structure on a substrate, the structure being subject to one or more asymmetric deviation. The method includes obtaining at least one intensity asymmetry value relating to the one or more asymmetric deviations, wherein the at least one intensity asymmetry value includes a metric related to a difference or imbalance between the respective intensities or amplitudes of at least two diffraction orders of radiation diffracted by the structure; determining at least one phase offset value corresponding to the one or more asymmetric deviations based on the at least one intensity asymmetry value; and determining one or more measurement corrections for the one or more asymmetric deviations from the at least one phase offset value.

公开(公告)号：US20190285993A1

公开(公告)日：2019-09-19

申请号：US16428215

申请日：2019-05-31

Applicant: ASML NETHERLANDS B.V.

Inventor： Nitesh PANDEY ,  Jin LIAN ,  Samee Ur REHMAN ,  Martin Jacobus Johan JAK

IPC: G03F7/20 ,  G01B11/02

Abstract: Methods and apparatuses for measuring a plurality of structures formed on a substrate are disclosed. In one arrangement, a method includes obtaining data from a first measurement process. The first measurement process including individually measuring each of the plurality of structures to measure a first property of the structure. A second measurement process is used to measure a second property of each of the plurality of structures. The second measurement process includes illuminating each structure with radiation having a radiation property that is individually selected for that structure using the measured first property for the structure.

公开(公告)号：US20240027918A1

公开(公告)日：2024-01-25

申请号：US18004555

申请日：2021-05-27

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus MATHIJSSEN ,  Patricius Aloysius Jacobus TINNEMANS ,  Arie Jeffrey DEN BOEF ,  Kaustuve BHATTACHARYYA ,  Samee Ur REHMAN

IPC: G03F7/00 ,  G03F9/00

CPC classification number: G03F7/70633 ,  G03F9/7046 ,  G03F9/7042

Abstract: Disclosed is a method of improving a measurement of a parameter of interest. The method comprises obtaining metrology data comprising a plurality of measured values of the parameter of interest, relating to one or more targets on a substrate, each measured value relating to a different measurement combination of a target of said one or more targets and a measurement condition used to measure that target and asymmetry metric data relating to asymmetry for said one or more targets. A respective relationship is determined for each of said measurement combinations relating a true value for the parameter of interest to the asymmetry metric data, based on an assumption that there is a common true value for the parameter of interest over said measurement combinations. These relationships are used to improve a measurement of the parameter of interest.

公开(公告)号：US20220082944A1

公开(公告)日：2022-03-17

申请号：US17419689

申请日：2019-12-11

Applicant: ASML Netherlands B.V.

Inventor： Samee Ur REHMAN ,  Anagnostis TSIATMAS ,  Sergey TARABRIN ,  Elliott Gerard MC NAMARA ,  Paul Christiaan HINNEN

IPC: G03F7/20 ,  G06F30/20

Abstract: A method to calculate a model of a metrology process including receiving a multitude of SEM measurements of a parameter of a semiconductor process, receiving a multitude of optical measurements of the parameter of a semiconductor process, determining a model of a metrology process wherein the optical measurements of the parameter of semiconductor process are mapped to the SEM measurements of the parameter of the semiconductor process using a regression algorithm.

公开(公告)号：US20240184221A1

公开(公告)日：2024-06-06

申请号：US18279121

申请日：2022-02-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Samee Ur REHMAN ,  Boris MENCHTCHIKOV ,  Robert John SOCHA

IPC: G03F9/00

CPC classification number: G03F9/7042 ,  G03F9/7019 ,  G03F9/7088

Abstract: A method of identifying one or more dominant asymmetry modes relating to asymmetry in an alignment mark, the method includes obtaining alignment data relating to measurement of alignment marks on at least one substrate using a plurality of alignment conditions; identifying one or more dominant orthogonal components of the alignment data, the one or more dominant orthogonal components including a number of orthogonal components which together sufficiently describes variance in the alignment data; and determining an asymmetry mode as dominant if it corresponds to an expected asymmetry mode shape which best matches one of the one or more dominant orthogonal components. Alternatively, the method includes, for each known asymmetric mode: determining a sensitivity metric; and determining an asymmetry mode as dominant if the sensitivity metric is above a sensitivity threshold.

公开(公告)号：US20220252988A1

公开(公告)日：2022-08-11

申请号：US17603870

申请日：2020-03-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy WERKMAN ,  David Frans Simon DECKERS ,  Simon Philip Spencer HASTINGS ,  Jeffrey Thomas ZIEBARTH ,  Samee Ur REHMAN ,  Davit HARUTYUNYAN ,  Chenxi LIN ,  Yana CHENG

IPC: G03F7/20 ,  G03F1/36

Abstract: A method for determining a correction for an apparatus used in a process of patterning substrates, the method including: obtaining a group structure associated with a processing history and/or similarity in fingerprint of to be processed substrates; obtaining metrology data associated with a plurality of groups within the group structure, wherein the metrology data is correlated between the groups; and determining the correction for a group out of the plurality of groups by applying a model to the metrology data, the model including at least a group-specific correction component and a common correction component.

公开(公告)号：US20210255552A1

公开(公告)日：2021-08-19

申请号：US17241142

申请日：2021-04-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Joannes Jitse VENSELAAR ,  Anagnostis TSIATMAS ,  Samee Ur REHMAN ,  Paul Christiaan HINNEN ,  Jean-Pierre Agnes Henricus Marie VAESSEN ,  Nicolas Mauricio WEISS ,  Gonzalo Roberto SANGUINETTI ,  Thomai ZACHAROPOULOU ,  Martijn Maria ZAAL

IPC: G03F7/20 ,  G06F17/12

Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.