公开(公告)号：US20220084784A1

公开(公告)日：2022-03-17

申请号：US17480032

申请日：2021-09-20

Applicant: ASML Netherlands B.V.

Inventor： Adam LYONS ,  Thomas I. WALLOW

IPC: H01J37/28 ,  G01N23/06 ,  G01N23/203 ,  G01N23/2251 ,  H01J37/04 ,  H01J37/147

Abstract: A method for scanning a sample by a charged particle beam tool is provided. The method includes providing the sample having a scanning area including a plurality of unit areas, scanning a unit area of the plurality of unit areas, blanking a next unit area of the plurality of unit areas adjacent to the scanned unit area, and performing the scanning and the blanking the plurality of unit areas until all of the unit areas are scanned.

公开(公告)号：US20180275521A1

公开(公告)日：2018-09-27

申请号：US15763387

申请日：2016-10-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Thomas I. WALLOW ,  Peng-cheng YANG ,  Adam LYONS ,  Mir Farrokh SHAYEGAN SALEK ,  Hermanus Adrianus DILLEN

IPC: G03F7/20 ,  G03F1/36 ,  G06F17/50

Abstract: A method including providing a plurality of unit cells for a plurality of gauge patterns appearing in one or more images of one or more patterning process substrates, each unit cell representing an instance of a gauge pattern of the plurality of gauge patterns, averaging together image information of each unit cell to arrive at a synthesized representation of the gauge pattern, and determining a geometric dimension of the gauge pattern based on the synthesized representation.

公开(公告)号：US20170177760A1

公开(公告)日：2017-06-22

申请号：US15379473

申请日：2016-12-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Robert John SOCHA ,  Thomas I. WALLOW

IPC: G06F17/50 ,  G03F7/20 ,  G06N99/00 ,  G06N7/00 ,  G01N21/47 ,  G06F17/18

CPC classification number: G06F17/5009 ,  G01N21/4785 ,  G01N2201/127 ,  G03F7/2002 ,  G03F7/2004 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633 ,  G06F17/18 ,  G06F2217/16 ,  G06N7/005 ,  G06N20/00

Abstract: A process of calibrating a model, the process including: obtaining training data including: scattered radiation information from a plurality of structures, individual portions of the scattered radiation information being associated with respective process conditions being characteristics of a patterning process of the individual structures; and calibrating a model with the training data by determining a ratio relating a change in one of the process characteristics to a corresponding change in scattered radiation information.

公开(公告)号：US20200211820A1

公开(公告)日：2020-07-02

申请号：US16730875

申请日：2019-12-30

Applicant: ASML Netherlands B.V.

Inventor： Adam LYONS ,  Thomas I. WALLOW

IPC: H01J37/28 ,  H01J37/147 ,  H01J37/04 ,  G01N23/2251 ,  G01N23/203 ,  G01N23/06

Abstract: A method for scanning a sample by a charged particle beam tool is provided. The method includes providing the sample having a scanning area including a plurality of unit areas, scanning a unit area of the plurality of unit areas, blanking a next unit area of the plurality of unit areas adjacent to the scanned unit area, and performing the scanning and the blanking the plurality of unit areas until all of the unit areas are scanned.

公开(公告)号：US20190018313A1

公开(公告)日：2019-01-17

申请号：US16067343

申请日：2016-12-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Thomas I. WALLOW

IPC: G03F1/36 ,  G03F1/80 ,  G06F17/50 ,  H01L21/033 ,  H01L21/311

Abstract: Provided is a process including: obtaining a layout specifying, at least in part, a pattern to be transferred to a substrate via a patterning process and an etch process; and modifying, with one or more processors, the layout to include an etch-assist feature that is larger than a resolution limit of the patterning process and smaller than a resolution limit of the etch process, the etch-assist feature being configured to reduce a bias of the patterning process or the etch process, to reduce an etch induced shift of a feature in the layout due to the etch process, or to expand a process window of another patterning process.

公开(公告)号：US20180364589A1

公开(公告)日：2018-12-20

申请号：US16061016

申请日：2016-11-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun CHEN ,  Thomas I. WALLOW ,  Bart LANENS ,  Yi-Hsing PENG

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G03F7/705

Abstract: A method including obtaining a plurality of gauges of a plurality of gauge patterns for a patterning process, each gauge pattern configured for measurement of a parameter of the patterning process when created as part of the patterning process, and creating a selection of one or more gauges from the plurality of gauges, wherein a gauge is included in the selection provided the gauge and all the other gauges, if any, of the same gauge pattern, or all of the one or more gauges of the same gauge pattern linked to the gauge, pass a gauge printability check.