Abstract:
Systems, apparatuses, and methods are provided for dual-pass amplification of laser beams along a common beam path. An example method can include generating a first laser beam and a second laser beam. Subsequently, the example method can include performing dual-pass amplification of the first laser beam and the second laser beam along a common beam path. In some aspects, the first laser beam can include a first wavelength, the second laser beam can include a second wavelength different from the first wavelength.
Abstract:
An optical source for an extreme ultraviolet (EUV) photolithography tool includes a light-generation system including a light-generation module; an optical amplifier including a gain medium associated with a gain band, the gain medium configured to amplify light having a wavelength in the gain band; and a wavelength-based optical filter system on a beam path between the light-generation module and the optical amplifier, the wavelength-based optical filter system including at least one optical element configured to allow light having a wavelength in a first set of wavelengths to propagate on the beam path and to remove light having a wavelength in a second set of wavelengths from the beam path, the first set of wavelengths and the second set of wavelengths including different wavelengths in the gain band of the optical amplifier.
Abstract:
A method and apparatus for protecting the seed laser a laser produced plasma (LPP) extreme ultraviolet (EUV) light system are disclosed. An isolation stage positioned on an optical path diverts light reflected from further components in the LPP EUV light system from reaching the seed laser. The isolation stage comprises two AOMs that are separated by a delay line. The AOMs, when open, direct light onto the optical path and, when closed, direct light away from the optical path. The delay introduced by the delay line is determined so that the opening and the closing of the AOMs can be timed to direct a forward-moving pulse onto the optical path and to divert reflected light at other times. The isolation stage can be positioned between gain elements to prevent amplified reflected light from reaching the seed laser and other potentially harmful effects.
Abstract:
An optical source for an extreme ultraviolet (EUV) photolithography tool includes a light-generation system including a light-generation module; an optical amplifier including a gain medium associated with a gain band, the gain medium configured to amplify light having a wavelength in the gain band; and a wavelength-based optical filter system on a beam path between the light-generation module and the optical amplifier, the wavelength-based optical filter system including at least one optical element configured to allow light having a wavelength in a first set of wavelengths to propagate on the beam path and to remove light having a wavelength in a second set of wavelengths from the beam path, the first set of wavelengths and the second set of wavelengths including different wavelengths in the gain band of the optical amplifier.