公开(公告)号：US09202868B2

公开(公告)日：2015-12-01

申请号：US14444361

申请日：2014-07-28

Applicant: Advanced Silicon Group, Inc.

Inventor： Brent Buchine ,  Marcie R. Black ,  Faris Modawar

IPC: H01L29/06 ,  B01J20/10 ,  B01J20/28 ,  B82Y20/00 ,  B82Y30/00 ,  H01L21/306 ,  H01L21/308 ,  H01L31/0236 ,  H01M4/38 ,  H01L29/16 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/36 ,  H01M4/66 ,  H01M10/0525

CPC classification number: H01L29/0669 ,  B01J20/10 ,  B01J20/28007 ,  B82Y20/00 ,  B82Y30/00 ,  C23C14/34 ,  H01L21/02118 ,  H01L21/02164 ,  H01L21/02175 ,  H01L21/02244 ,  H01L21/02282 ,  H01L21/02307 ,  H01L21/0234 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/30604 ,  H01L21/3086 ,  H01L21/32134 ,  H01L29/04 ,  H01L29/0676 ,  H01L29/16 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/0352 ,  H01M4/0492 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/366 ,  H01M4/386 ,  H01M4/661 ,  H01M10/0525 ,  H01M2004/027 ,  Y02E10/50 ,  Y10S977/762

Abstract: A process is provided for etching a silicon-containing substrate to form nanowire arrays. In this process, one deposits nanoparticles and a metal film onto the substrate in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. One submerges the metallized substrate into an etchant aqueous solution comprising HF and an oxidizing agent. In this way arrays of nanowires with controlled diameter and length are produced.

Abstract translation: 提供了一种用于蚀刻含硅衬底以形成纳米线阵列的工艺。 在这个过程中，将纳米颗粒和金属膜以这样的方式将金属纳米沉积到金属膜上，使得存在金属并且接触需要蚀刻的硅并且阻止其接触硅或不存在于其中的硅。 一个将金属化衬底浸入包含HF和氧化剂的蚀刻剂水溶液中。 以这种方式产生具有受控直径和长度的纳米线阵列。