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    High temperature polyimide electrostatic chuck
    1.
    发明授权
    High temperature polyimide electrostatic chuck 失效
    高温聚酰亚胺静电吸盘

    公开(公告)号：US5691876A

    公开(公告)日：1997-11-25

    申请号：US381258

    申请日：1995-01-31

    申请人： Aihua Chen ,  Vijay Parkhe ,  Sergio Edelstein

    发明人： Aihua Chen ,  Vijay Parkhe ,  Sergio Edelstein

    IPC分类号： B23Q3/15 ,  H01L21/683 ,  H02N13/00

    CPC分类号： H01L21/6831 ,  H01L21/6833

    摘要： In accordance with the present invention, two types of polymeric dielectric systems useful in construction of a high-temperature electrostatic chuck are disclosed. Further, a high temperature power connection for transmitting power from a supply source to a conductive extension from the electrostatic chuck conductive layer is described. The first polymeric dielectric system provides for the use of polyimide films which do not require an adhesive to adhere to an underlying substrate support platen. The self-adhering polyimide film comprises from one to three layers of polyimide material, wherein at least one outer layer of polyimide material is thermoplastic in nature, for the purpose of adhesion and/or encapsulation. When the film comprises two layers, one of the layers is a non-thermoplastic polyimide having an increased glass transition temperature of about 350.degree. C. or greater. When the film comprises three layers, typically the center layer is the non-thermoplastic polyimide, with the upper and lower layers being a thermoplastic polyimide. The thermoplastic polyimide is placed in contact with a substrate to which it is to bond (such as the surface of a conductive platen used to support a semiconductor workpiece) and heat and pressure are applied to cause the thermoplastic polyimide to flow and bond to the substrate. The second polymeric dielectric system provides for the use of a liquid polyamic acid or modified polyimide precursor which is cured in place against a substrate to provide a polyimide-comprising film adhered to the substrate. Depending on the composition of the polyamic acid or modified polyimide precursor, various degrees of crystallinity can be achieved in the cured, solid polyimide.

    摘要翻译： 根据本发明，公开了可用于构建高温静电卡盘的两种类型的聚合介电系统。 此外，描述了用于从静电卡盘导电层将电源从电源传输到导电延伸部分的高温电源连接。 第一聚合物介电系统提供使用不需要粘合剂的聚酰亚胺膜粘附到下面的基底支撑台板上。 自粘聚酰亚胺膜包含一层至三层聚酰亚胺材料，其中至少一层聚酰亚胺材料本质上是热塑性的，用于粘合和/或封装。 当膜包含两层时，其中一层是玻璃化转变温度升高约350℃或更高的非热塑性聚酰亚胺。 当膜包括三层时，通常中心层是非热塑性聚酰亚胺，上层和下层是热塑性聚酰亚胺。 将热塑性聚酰亚胺与要与其键合的基底（例如用于支撑半导体工件的导电平台的表面）接触，并施加热和压力以使热塑性聚酰亚胺流动并结合到基底 。 第二聚合物介电系统提供使用液体聚酰胺酸或改性的聚酰亚胺前体，其被固化在基底上以提供粘附到基底上的含聚酰亚胺的膜。 根据聚酰胺酸或改性聚酰亚胺前体的组成，可以在固化的固体聚酰亚胺中获得不同程度的结晶度。

    Electrical connector for power transmission in an electrostatic chuck
    2.
    发明授权
    Electrical connector for power transmission in an electrostatic chuck 失效
    用于静电吸盘动力传输的电气连接器

    公开(公告)号：US5908334A

    公开(公告)日：1999-06-01

    申请号：US881528

    申请日：1997-06-24

    申请人： Aihua Chen ,  Vijay Parkhe ,  Sergio Edelstein

    发明人： Aihua Chen ,  Vijay Parkhe ,  Sergio Edelstein

    IPC分类号： B23Q3/15 ,  H01L21/683 ,  H02N13/00 ,  H01R13/24

    CPC分类号： H01L21/6831 ,  H01L21/6833

    摘要： In accordance with the present invention, two types of polymeric dielectric systems useful in construction of a high-temperature electrostatic chuck are disclosed. Further, a high temperature power connection for transmitting power from a supply source to a conductive extension from the electrostatic chuck conductive layer is described. The first polymeric dielectric system provides for the use of polyimide films which do not require an adhesive to adhere to an underlying substrate support platen. The self-adhering polyimide film comprises from one to three layers of polyimide material, wherein at least one outer layer of polyimide material is thermoplastic in nature, for the purpose of adhesion and/or encapsulation. When the film comprises two layers, one of the layers is a non-thermoplastic polyimide having an increased glass transition temperature of about 350.degree. C. or greater. When the film comprises three layers, typically the center layer is the non-thermoplastic polyimide, with the upper and lower layers being a thermoplastic polyimide. The thermoplastic polyimide is placed in contact with a substrate to which it is to bond (such as the surface of a conductive platen used to support a semiconductor workpiece) and heat and pressure are applied to cause the thermoplastic polyimide to flow and bond to the substrate. The second polymeric dielectric system provides for the use of a liquid polyamic acid or modified polyimide precursor which is cured in place against a substrate to provide a polyimide-comprising film adhered to the substrate. Depending on the composition of the polyamic acid or modified polyimide precursor, various degrees of crystallinity can be achieved in the cured, solid polyimide.

    摘要翻译： 根据本发明，公开了可用于构建高温静电卡盘的两种类型的聚合介电系统。 此外，描述了用于从静电卡盘导电层将电源从电源传输到导电延伸部分的高温电源连接。 第一聚合物介电系统提供使用不需要粘合剂的聚酰亚胺膜粘附到下面的基底支撑台板上。 自粘聚酰亚胺膜包含一层至三层聚酰亚胺材料，其中至少一层聚酰亚胺材料本质上是热塑性的，用于粘合和/或封装。 当膜包含两层时，其中一层是玻璃化转变温度升高约350℃或更高的非热塑性聚酰亚胺。 当膜包括三层时，通常中心层是非热塑性聚酰亚胺，上层和下层是热塑性聚酰亚胺。 将热塑性聚酰亚胺与要与其键合的基底（例如用于支撑半导体工件的导电平台的表面）接触，并施加热和压力以使热塑性聚酰亚胺流动并结合到基底 。 第二聚合物介电系统提供使用液体聚酰胺酸或改性的聚酰亚胺前体，其固化在基底上以提供粘附到基底上的含聚酰亚胺的膜。 根据聚酰胺酸或改性聚酰亚胺前体的组成，可以在固化的固体聚酰亚胺中获得不同程度的结晶度。

    Optical system for measuring samples using short wavelength radiation
    4.
    发明授权
    Optical system for measuring samples using short wavelength radiation 有权
    用于使用短波长辐射测量样品的光学系统

    公开(公告)号：US07369233B2

    公开(公告)日：2008-05-06

    申请号：US10718126

    申请日：2003-11-19

    申请人： Mehrdad Nikoonahad ,  Shing Lee ,  Hidong Kwak ,  Sergio Edelstein ,  Guoheng Zhao ,  Gary Janik

    发明人： Mehrdad Nikoonahad ,  Shing Lee ,  Hidong Kwak ,  Sergio Edelstein ,  Guoheng Zhao ,  Gary Janik

    IPC分类号： G01N21/17

    CPC分类号： G01N21/9501 ,  G01N21/8806

    摘要： In an optical system measuring sample characteristics, by reducing the amount of ambient absorbing gas or gases and moisture present in at least a portion of the illumination and detection paths experienced by vacuum ultraviolet (VUV) radiation used in the measurement process, the attenuation of such wavelength components can be reduced. Such reduction can be accomplished by a process without requiring the evacuation of all gases and moisture from the measurement system. In one embodiment, the reduction can be accomplished by displacing at least some of the absorbing gas(es) and moisture present in at least a portion of the measuring paths so as to reduce the attenuation of VUV radiation. In this manner, the sample does not need to be placed in a vacuum, thereby enhancing system throughput.

    摘要翻译： 在测量样品特性的光学系统中，通过减少在测量过程中使用的真空紫外线（VUV）辐射所经历的照明和检测路径的至少一部分中存在的环境吸收气体或气体和水分的量， 可以减少波长分量。 这种还原可以通过一种方法来实现，而不需要从测量系统排出所有的气体和水分。 在一个实施例中，可以通过置换至少部分测量路径中的至少一些吸收气体和水分来实现还原，以便减少VUV辐射的衰减。 以这种方式，样品不需要放置在真空中，从而提高系统产量。

    Spin-rinse-drying process for electroplated semiconductor wafers
    5.
    发明授权
    Spin-rinse-drying process for electroplated semiconductor wafers 有权
    电镀半导体晶圆的旋转干燥工艺

    公开(公告)号：US06290865B1

    公开(公告)日：2001-09-18

    申请号：US09201566

    申请日：1998-11-30

    申请人： Mark Lloyd ,  Ashok K. Sinha ,  Sergio Edelstein ,  Michael Sugarman

    发明人： Mark Lloyd ,  Ashok K. Sinha ,  Sergio Edelstein ,  Michael Sugarman

    IPC分类号： C23F100

    CPC分类号： H01L21/02087 ,  H01L21/0209 ,  H01L21/32134 ,  H01L21/67051 ,  H01L21/6708 ,  Y10S438/928

    摘要： The present invention removes unwanted deposited material from a substrate backside by chemically dissolving the material, while substantially preventing dissolution of the material from the substrate front side. Preferably, the dissolving process is included with a spin-rinse-dry process and uses a greater flow rate of rinsing fluid directed onto the front side compared to the flow rate of dissolving fluid directed onto a substrate backside to protect the substrate front side while the unwanted backside material is removed. The present invention includes the method of dissolving the unwanted material from the backside and edge and the associated apparatus.

    摘要翻译： 本发明通过化学溶解材料从衬底背面去除不想要的沉积材料，同时基本上防止材料从衬底前侧的溶解。 优选地，溶解过程包括在旋转冲洗干燥过程中，并且与引导到衬底背面的溶解流体的流速相比，使用更大的冲洗流体流量，以保护衬底前侧，同时 去除不需要的背面材料。 本发明包括从背面和边缘以及相关联的装置中溶解不需要的材料的方法。

    Wafer heater assembly
    8.
    发明授权
    Wafer heater assembly 失效
    晶圆加热器总成

    公开(公告)号：US5796074A

    公开(公告)日：1998-08-18

    申请号：US565185

    申请日：1995-11-28

    申请人： Sergio Edelstein ,  Steven A. Chen ,  Vijay D. Parkhe

    发明人： Sergio Edelstein ,  Steven A. Chen ,  Vijay D. Parkhe

    IPC分类号： C30B35/00 ,  C23C14/50 ,  C23C16/458 ,  H01L21/02 ,  H01L21/205 ,  H01L21/31 ,  F27B5/14

    CPC分类号： C23C14/50 ,  C23C16/4586

    摘要： A wafer heater assembly (8) for a deposition/etch chamber (2) includes a base (32) and a wafer support or chuck (36), having a wafer-chucking surface (76), spaced apart from the base by a circumferential barrier support (38). A heater sub-assembly (54) is mounted to the wafer support. Bolts (48) are used to secure the wafer support to the base with the barrier support therebetween to press the barrier support against an elastomeric O-ring, a metal V-seal or other fluid seal (46) positioned between the base and base end (42) of the barrier support. This eliminates the need to discard the entire heater assembly if the dielectric wafer-chucking surface becomes damaged. The temperature of the fluid seal is about 50.degree.-70.degree. C. lower than the temperature of the wafer-chucking surface when the wafer-chucking surface is about 200.degree.-300.degree. C.

    摘要翻译： 用于沉积/蚀刻室（2）的晶片加热器组件（8）包括基部（32）和具有晶片夹持表面（76）的晶片支撑或卡盘（36），所述晶片夹持表面与基部间隔开圆周 屏障支撑（38）。 加热器子组件（54）安装到晶片支撑件上。 螺栓（48）用于将晶片支撑件固定到底座上，其间具有阻挡支撑件，以将阻挡支撑件压靠在弹性体O形环，金属V形密封件或位于基部和基端之间的其它流体密封件（46） （42）。 这就消除了如果介质晶片夹紧表面损坏，则放弃整个加热器组件的需要。 当晶片夹紧表面约为200-300℃时，流体密封件的温度比晶片夹持表面的温度低约50-70℃。