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公开(公告)号：US07354866B2
公开(公告)日：2008-04-08
申请号：US11531634
申请日：2006-09-13
Applicant: Ajay Kumar , Ramesh Krishnamurthy
Inventor： Ajay Kumar , Ramesh Krishnamurthy
IPC: H01L21/302
CPC classification number: H01L21/67167 , H01L21/02071 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/32136 , H01L21/32137 , H01L21/32139 , H01L21/67253
Abstract: A method and apparatus for process integration in manufacture of a gate structure of a field effect transistor are disclosed. The method includes assembling an integrated substrate processing system having a metrology module and a vacuumed processing platform to perform controlled and adaptive plasma processes without exposing the substrate to a non-vacuumed environment.
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2.发明申请Method for plasma etching a chromium layer suitable for photomask fabrication 失效用于等离子体蚀刻适用于光掩模制造的铬层的方法公开(公告)号：US20060166107A1
公开(公告)日：2006-07-27
申请号：US11044341
申请日：2005-01-27
Applicant: Xiaoyi Chen , Michael Grimbergen , Madhavi Chandrachood , Jeffrey Tran , Ajay Kumar , Simon Tam , Ramesh Krishnamurthy
Inventor： Xiaoyi Chen , Michael Grimbergen , Madhavi Chandrachood , Jeffrey Tran , Ajay Kumar , Simon Tam , Ramesh Krishnamurthy
Abstract: A method for etching a chromium layer is provided herein. In one embodiment, a method for etching a chromium layer includes providing a filmstack in an etching chamber, the filmstack having a chromium layer partially exposed through a patterned layer, providing at least one halogen containing process gas to a processing chamber, biasing the layer disposed on a substrate support in the processing chamber with a plurality of power pulses less than 600 Watts, and etching the chromium layer through a patterned mask. The method for plasma etching a chromium layer described herein is particularly suitable for fabricating photomasks.
Abstract translation: 本文提供了蚀刻铬层的方法。 在一个实施例中，用于蚀刻铬层的方法包括在蚀刻室中设置膜层，所述膜层具有部分地通过图案化层暴露的铬层，向处理室提供至少一种含卤素的处理气体， 在处理室中的衬底支撑件上具有小于600瓦的多个功率脉冲，并且通过图案化掩模蚀刻铬层。 本文所述的用于等离子体蚀刻铬层的方法特别适用于制造光掩模。
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3.发明申请Cluster tool and method for process integration in manufacture of a gate structure of a field effect transistor 失效用于制造场效应晶体管的栅极结构的工艺集成的簇工具和方法公开(公告)号：US20060021702A1
公开(公告)日：2006-02-02
申请号：US10909009
申请日：2004-07-29
Applicant: Ajay Kumar , Ramesh Krishnamurthy
Inventor： Ajay Kumar , Ramesh Krishnamurthy
IPC: H01L21/306 , C23F1/00
CPC classification number: H01L21/67167 , H01L21/02071 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/32136 , H01L21/32137 , H01L21/32139 , H01L21/67253
Abstract: A method and apparatus for process integration in manufacture of a gate structure of a field effect transistor are disclosed. The method includes assembling an integrated substrate processing system having a metrology module and a vacuumed processing platform to perform controlled and adaptive plasma processes without exposing the substrate to a non-vacuumed environment.
Abstract translation: 公开了一种在场效应晶体管的栅极结构的制造中用于工艺集成的方法和装置。 该方法包括组装具有计量模块和真空处理平台的集成基板处理系统，以执行受控和自适应等离子体处理，而不将基板暴露于非真空环境。
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4.发明申请CLUSTER TOOL AND METHOD FOR PROCESS INTEGRATION IN MANUFACTURE OF A GATE STRUCTURE OF A FIELD EFFECT TRANSISTOR 有权集束工具和方法集成在场效应晶体管的门结构中的集成公开(公告)号：US20070026547A1
公开(公告)日：2007-02-01
申请号：US11531634
申请日：2006-09-13
Applicant: Ajay Kumar , Ramesh Krishnamurthy
Inventor： Ajay Kumar , Ramesh Krishnamurthy
IPC: H01L21/66 , H01L21/302
CPC classification number: H01L21/67167 , H01L21/02071 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/32136 , H01L21/32137 , H01L21/32139 , H01L21/67253
Abstract: A method and apparatus for process integration in manufacture of a gate structure of a field effect transistor are disclosed. The method includes assembling an integrated substrate processing system having a metrology module and a vacuumed processing platform to perform controlled and adaptive plasma processes without exposing the substrate to a non-vacuumed environment.
Abstract translation: 公开了一种在场效应晶体管的栅极结构的制造中用于工艺集成的方法和装置。 该方法包括组装具有计量模块和真空处理平台的集成基板处理系统，以执行受控和自适应等离子体处理，而不将基板暴露于非真空环境。
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5.发明授权Method for plasma etching a chromium layer suitable for photomask fabrication 失效用于等离子体蚀刻适用于光掩模制造的铬层的方法公开(公告)号：US07829243B2
公开(公告)日：2010-11-09
申请号：US11044341
申请日：2005-01-27
Applicant: Xiaoyi Chen , Michael Grimbergen , Madhavi Chandrachood , Jeffrey X. Tran , Ajay Kumar , Simon Tam , Ramesh Krishnamurthy
Inventor： Xiaoyi Chen , Michael Grimbergen , Madhavi Chandrachood , Jeffrey X. Tran , Ajay Kumar , Simon Tam , Ramesh Krishnamurthy
IPC: G03F1/00
Abstract: A method for etching a chromium layer is provided herein. In one embodiment, a method for etching a chromium layer includes providing a filmstack in an etching chamber, the filmstack having a chromium layer partially exposed through a patterned layer, providing at least one halogen containing process gas to a processing chamber, biasing the layer disposed on a substrate support in the processing chamber with a plurality of power pulses less than 600 Watts, and etching the chromium layer through a patterned mask. The method for plasma etching a chromium layer described herein is particularly suitable for fabricating photomasks.
Abstract translation: 本文提供了蚀刻铬层的方法。 在一个实施例中，用于蚀刻铬层的方法包括在蚀刻室中设置膜层，所述膜层具有部分地通过图案化层暴露的铬层，向处理室提供至少一种含卤素的处理气体， 在处理室中的衬底支撑件上具有小于600瓦的多个功率脉冲，并且通过图案化掩模蚀刻铬层。 本文所述的用于等离子体蚀刻铬层的方法特别适用于制造光掩模。
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Patent Agency Ranking
6.发明授权Cluster tool and method for process integration in manufacture of a gate structure of a field effect transistor 失效用于制造场效应晶体管的栅极结构的工艺集成的簇工具和方法公开(公告)号：US07431795B2
公开(公告)日：2008-10-07
申请号：US10909009
申请日：2004-07-29
Applicant: Ajay Kumar , Ramesh Krishnamurthy
Inventor： Ajay Kumar , Ramesh Krishnamurthy
IPC: C23F1/00 , H01L21/306 , C23C16/00
CPC classification number: H01L21/67167 , H01L21/02071 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/32136 , H01L21/32137 , H01L21/32139 , H01L21/67253
Abstract: A method and apparatus for process integration in manufacture of a gate structure of a field effect transistor are disclosed. The method includes assembling an integrated substrate processing system having a metrology module and a vacuumed processing platform to perform controlled and adaptive plasma processes without exposing the substrate to a non-vacuumed environment.
Abstract translation: 公开了一种在场效应晶体管的栅极结构的制造中用于工艺集成的方法和装置。 该方法包括组装具有计量模块和真空处理平台的集成基板处理系统，以执行受控和自适应等离子体处理，而不将基板暴露于非真空环境。
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公开(公告)号：US07789918B2
公开(公告)日：2010-09-07
申请号：US11547458
申请日：2004-08-09
Applicant: Deepak Kumar Tuli , Ajay Kumar Arora , Shanti Prakash , Rajiv Ranjan , Krishan Kumar Swami , Ajay Kumar , Rakesh Sarin , Ram Prakash Verma , Niranjan Raghunath Raje
Inventor： Deepak Kumar Tuli , Ajay Kumar Arora , Shanti Prakash , Rajiv Ranjan , Krishan Kumar Swami , Ajay Kumar , Rakesh Sarin , Ram Prakash Verma , Niranjan Raghunath Raje
IPC: C10L1/18 , C10L1/32 , C10M169/04
CPC classification number: C10L10/08 , C10L1/18 , C10L1/1881 , C10L1/19 , C10L1/191
Abstract: The present invention relates to a additive composition for use as lubricity improver for low sulphur diesel, comprising c) 0.1-10% by weight of ester derivative derived from cashew nut shell liquid (CNSL esters) of formula (I); f) 0.1-10% by weight of ester derivative derived from cashew nut shell liquid of formula (II); g) 50-95% by weight of free fatty acid of the formula RCOOH in which R represents an alkyl/alkenyl group with 12 to 24 carbon atoms. h) 1-30% by weight of synthetic esters derived by esterifying tri, tetra, penta hydric alcohols with carboxylic acids such as lauric, palmitic, linoleic, ricinoleic etc.
Abstract translation: 本发明涉及一种用作低硫柴油的润滑改进剂的添加剂组合物，其包含c）0.1-10重量％衍生自式（I）的腰果壳液（CNSL酯）的酯衍生物; f）0.1-10重量％衍生自式（II）的腰果壳液的酯衍生物; g）50-95重量％的式RCOOH的游离脂肪酸，其中R表示具有12至24个碳原子的烷基/链烯基。 h）1-30重量％的通过酯化三，四，五羟基醇与羧酸如月桂酸，棕榈酸，亚油酸，蓖麻油酸等衍生的合成酯。
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公开(公告)号：US20080098642A1
公开(公告)日：2008-05-01
申请号：US11547458
申请日：2004-08-09
Applicant: Deepak Kumar Tuli , Ajay Kumar Arora , Shanti Prakash , Rajiv Ranjan , Krishan Kumar Swami , Ajay Kumar , Rakesh Sarin , Ram Prakash Verma , Niranjan Raghunath Raje
Inventor： Deepak Kumar Tuli , Ajay Kumar Arora , Shanti Prakash , Rajiv Ranjan , Krishan Kumar Swami , Ajay Kumar , Rakesh Sarin , Ram Prakash Verma , Niranjan Raghunath Raje
IPC: C10L1/18
CPC classification number: C10L10/08 , C10L1/18 , C10L1/1881 , C10L1/19 , C10L1/191
Abstract: The present invention relates to a additive composition for use as lubricity improver for low sulphur diesel, comprising c) 0.1-10% by weight of ester derivative derived from cashew nut shell liquid (CNSL esters) of formula (I); f) 0.1-10% by weight of ester derivative derived from cashew nut shell liquid of formula (II); g) 50-95% by weight of free fatty acid of the formula RCOOH in which R represents an alkyl/alkenyl group with 12 to 24 carbon atoms. h) 1-30% by weight of synthetic esters derived by esterifying tri, tetra, penta hydric alcohols with carboxylic acids such as lauric, palmitic, linoleic, ricinoleic etc.
Abstract translation: 本发明涉及一种用作低硫柴油的润滑改进剂的添加剂组合物，其包含c）0.1-10重量％衍生自式（I）的腰果壳液（CNSL酯）的酯衍生物; f）0.1-10重量％衍生自式（II）的腰果壳液的酯衍生物; g）50-95重量％的式RCOOH的游离脂肪酸，其中R表示具有12至24个碳原子的烷基/链烯基。 h）1-30重量％的通过酯化三，四，五羟基醇与羧酸如月桂酸，棕榈酸，亚油酸，蓖麻油酸等衍生的合成酯。
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9.发明申请公开(公告)号：US20170342086A1
公开(公告)日：2017-11-30
申请号：US15013616
申请日：2016-02-02
Applicant: Ajay Kumar
Inventor： Ajay Kumar
IPC: C07D491/153 , G01N21/65 , A61K31/337 , G01N33/574 , A61K31/4741
CPC classification number: C07D491/153 , A61K31/337 , A61K31/4741 , A61K45/06 , G01N21/658 , G01N33/57496 , G01N2333/47 , G01N2333/914 , A61K2300/00
Abstract: The disclosure provides compounds and methods for treating cancer by inhibiting the formation of cancer cells resistant to paclitaxel by preventing the formation of GBP1:PIM1 protein interaction during a chemotherapeutic treatment. These compounds and methods are able to treat cancer individually or in conjunction with paclitaxel.
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10.发明申请ETCH-RESISTANT WATER SOLUBLE MASK FOR HYBRID WAFER DICING USING LASER SCRIBING AND PLASMA ETCH 有权使用激光切割和等离子体蚀刻的混合波浪蚀刻防蚀水溶性掩模公开(公告)号：US20160365283A1
公开(公告)日：2016-12-15
申请号：US14738389
申请日：2015-06-12
Applicant: Wei-Sheng Lei , Mohammad Kamruzzaman Chowdhury , Brad Eaton , Ajay Kumar
Inventor： Wei-Sheng Lei , Mohammad Kamruzzaman Chowdhury , Brad Eaton , Ajay Kumar
IPC: H01L21/82 , H01L21/308 , H01J37/32 , H01L21/02 , H01L21/67 , H01L21/3065 , H01L21/268
CPC classification number: H01L21/82 , H01J37/32889 , H01J37/32899 , H01J2237/334 , H01J2237/335 , H01L21/02057 , H01L21/02076 , H01L21/3065 , H01L21/3081 , H01L21/3086 , H01L21/31105 , H01L21/31127 , H01L21/32131 , H01L21/67207 , H01L21/78
Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer including a plurality of integrated circuits includes forming a water soluble mask above the semiconductor wafer, the water soluble mask covering and protecting the integrated circuits. The method also includes baking the water soluble mask to increase the etch resistance of the water soluble mask. The method also includes, subsequent to baking the water soluble mask, patterning the water soluble mask with a laser scribing process to provide a water soluble patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The method also includes plasma etching the semiconductor wafer through the gaps in the water soluble patterned mask to singulate the integrated circuits.
Abstract translation: 对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。 在一个实例中，对包括多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成水溶性掩模，所述水溶性掩模覆盖并保护集成电路。 该方法还包括烘烤水溶性面罩以增加水溶性面膜的耐蚀刻性。 该方法还包括在烘焙水溶性掩模之后，用激光划线工艺图案化水溶性掩模，以提供具有间隙的水溶性图案化掩模，暴露集成电路之间的半导体晶片的区域。 该方法还包括通过水溶性图案化掩模中的间隙等离子体蚀刻半导体晶片以对集成电路进行分离。
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