Working vehicle
    2.
    发明授权
    Working vehicle 有权
    工作车辆

    公开(公告)号:US07913799B2

    公开(公告)日:2011-03-29

    申请号:US11989804

    申请日:2005-09-16

    摘要: The invention provides a working vehicle which can easily couple the accelerator arm of the governor of the engine and the shift peal in spite that the rotating speed of the engine can be easily changed on the basis of the operation of the shift pedal, and the manufacturing cost can be easily reduced. In a working vehicle provide with an engine mounted to a traveling machine body provided with traveling wheels, a hydraulic continuously variable transmission shifting a power from the engine, and a shift pedal operating so as to increase and decrease a shift output of the hydraulic continuously variable transmission and an accelerator arm of the engine are coupled via an interlocking mechanism.

    摘要翻译: 本发明提供了一种工作车辆,其可以容易地联接发动机的调速器的加速器臂和换档孔,尽管基于换档踏板的操作可以容易地改变发动机的转速,并且制造 成本可以轻松降低。 在工作车辆中,提供安装在具有行进轮的行进机体上的发动机,从发动机移动动力的液压无级变速器和操作用于增加和减少液压连续变量的换档输出的换档踏板 发动机的发动机和加速器臂通过联动机构联接。

    JET GENERATING DEVICE AND ELECTRONIC APPARATUS
    3.
    发明申请
    JET GENERATING DEVICE AND ELECTRONIC APPARATUS 失效
    喷气发动装置和电子装置

    公开(公告)号:US20060239844A1

    公开(公告)日:2006-10-26

    申请号:US11379498

    申请日:2006-04-20

    申请人: Norikazu Nakayama

    发明人: Norikazu Nakayama

    IPC分类号: F04B17/00

    摘要: A jet generating device includes a housing having an opening and containing gas therein, a vibrating member which is supported by the housing so that the vibrating member is capable of vibrating and which vibrates the gas to discharge the gas as pulsating gas through the opening, a driving mechanism for driving the vibrating member in accordance with an electrical signal, and a drive controller which generates the electrical signal at a fundamental frequency at which an input impedance of the driving mechanism is substantially a maximum and which outputs the generated electrical signal to the driving mechanism.

    摘要翻译: 一种喷射发生装置,包括:具有开口并容纳气体的壳体;振动部件,其由所述壳体支撑,使得所述振动部件能够振动,并且使所述气体振动并将所述气体作为脉动气体排出所述开口; 驱动机构,用于根据电信号驱动振动部件;以及驱动控制器,其以基本频率产生电信号,在该基本频率处,驱动机构的输入阻抗基本上最大,并且将所产生的电信号输出到驾驶 机制。

    Capacitor apparatus of the capacity variable type

    公开(公告)号:US06885537B2

    公开(公告)日:2005-04-26

    申请号:US10450867

    申请日:2002-10-09

    申请人: Norikazu Nakayama

    发明人: Norikazu Nakayama

    CPC分类号: H01G5/16 H01G5/18

    摘要: The present invention is directed to a capacitor apparatus of the capacity variable type. This capacitor apparatus is manufactured by Micro Electro-Mechanical System technology, and comprises an insulating substrate (2) in which at least two capacitor electrodes (3), (4) are formed on one surface (2a) in the state where they are insulated each other, an actuator (5) formed by insulating material and having an external shape to bridge over the respective capacitor electrodes (3), (4), the actuator (5) being such that a conductor which respectively constitutes capacitors between the conductor (6) and these capacitor electrodes (3), (4), and drive means (7) for allowing this actuator (5) to undergo an operation to come into contact with one principal surface (2a) of the insulating substrate (2) or to become away therefrom.

    Surface-emitting semiconductor light emitting device
    5.
    发明授权
    Surface-emitting semiconductor light emitting device 失效
    表面发射半导体发光器件

    公开(公告)号:US5617446A

    公开(公告)日:1997-04-01

    申请号:US499894

    申请日:1995-07-11

    摘要: A surface-emitting semiconductor light emitting device comprises an n-type ZnSe buffer layer, n-type ZnSSe layer, n-type ZnMgSSe cladding layer, n-type ZnSSe waveguide layer, active layer, p-type ZnSSe waveguide layer, p-type ZnMgSSe cladding layer, p-type ZnSSe layer, p-type ZnSe contact layer, p-type ZnSe/ZnTe MQW layer and p-type ZnTe contact layer, sequentially stacked on an n-type GaAs substrate. A grid-shaped p-side electrode and a Au film convering the p-side electrode are provided on the p-type ZnTe contact layer. An n-side electrode is provided on the back surface of the n-type GaAs substrate. The active layer has a single quantum well structure or a multiple quantum structure including ZnCdSe quantum well layers.

    摘要翻译: 表面发射半导体发光器件包括n型ZnSe缓冲层,n型ZnSSe层,n型ZnMgSSe覆层,n型ZnSSe波导层,有源层,p型ZnSSe波导层,p型 ZnMgSSe覆层,p型ZnSSe层,p型ZnSe接触层,p型ZnSe / ZnTe MQW层和p型ZnTe接触层,依次层叠在n型GaAs衬底上。 在p型ZnTe接触层上设置有形成p侧电极的栅状p侧电极和Au膜。 在n型GaAs衬底的背面设有n侧电极。 活性层具有单量子阱结构或包含ZnCdSe量子阱层的多量子结构。

    Light-emitting device, electronic apparatus, and light-emitting device manufacturing method
    6.
    发明授权
    Light-emitting device, electronic apparatus, and light-emitting device manufacturing method 有权
    发光装置,电子装置和发光装置的制造方法

    公开(公告)号:US07915620B2

    公开(公告)日:2011-03-29

    申请号:US12369463

    申请日:2009-02-11

    IPC分类号: H01L27/15

    摘要: Disclosed is a light-emitting device. The light-emitting device includes an EL layer and a heat dissipation layer. The EL layer includes a first semiconductor layer, a second semiconductor layer, and an active layer, the first semiconductor layer having a first conductivity type that is one of n type and p type, the second semiconductor layer having a second conductivity type that is opposite to the first conductivity type, the active layer being provided between the first semiconductor layer and the second semiconductor layer. The heat dissipation layer has the first conductivity type and is bonded to a side of the EL layer closer to the second semiconductor layer than the first semiconductor layer.

    摘要翻译: 公开了一种发光装置。 发光器件包括EL层和散热层。 EL层包括第一半导体层,第二半导体层和有源层,第一半导体层具有作为n型和p型之一的第一导电类型,第二半导体层具有相反的第二导电类型 对于第一导电类型,有源层设置在第一半导体层和第二半导体层之间。 散热层具有第一导电类型,并且被结合到比第一半导体层更靠近第二半导体层的EL层的一侧。

    Capacitor apparatus of the capacity variable type
    7.
    发明授权
    Capacitor apparatus of the capacity variable type 失效
    容量变量型电容器

    公开(公告)号:US07002787B2

    公开(公告)日:2006-02-21

    申请号:US11104908

    申请日:2005-04-13

    申请人: Norikazu Nakayama

    发明人: Norikazu Nakayama

    IPC分类号: H01G7/00

    CPC分类号: H01G5/16 H01G5/18

    摘要: The present invention is directed to a capacitor apparatus of the capacity variable type. This capacitor apparatus is manufactured by Micro Electro-Mechanical System technology, and comprises an insulating substrate (2) in which at least two capacitor electrodes (3), (4) are formed on one surface (2a) in the state where they are insulated each other, an actuator (5) formed by insulating material and having an external shape to bridge over the respective capacitor electrodes (3), (4), the actuator (5) being such that a conductor which respectively constitutes capacitors between the conductor (6) and these capacitor electrodes (3), (4), and drive means (7) for allowing this actuator (5) to undergo an operation to come into contact with one principal surface (2a) of the insulating substrate (2) or to become away therefrom.

    摘要翻译: 本发明涉及容量可变型的电容器装置。 该电容器装置由微电子机械系统技术制造,其特征在于,包括绝缘基板(2),其中在一个表面(2a)上形成有至少两个电容电极(3),(4) 彼此绝缘,由绝缘材料形成并具有外部形状以跨接在各个电容器电极(3),(4)上的致动器(5),致动器(5)使得分别构成导体之间的电容器的导体 (6)和这些电容器电极(3),(4)和驱动装置(7),用于使该致动器(5)进行与绝缘基板(2)的一个主表面(2a)接触的操作 )或离开。

    Capacitor apparatus of the capacity variable type

    公开(公告)号:US20050254195A1

    公开(公告)日:2005-11-17

    申请号:US11104908

    申请日:2005-04-13

    申请人: Norikazu Nakayama

    发明人: Norikazu Nakayama

    CPC分类号: H01G5/16 H01G5/18

    摘要: The present invention is directed to a capacitor apparatus of the capacity variable type. This capacitor apparatus is manufactured by Micro Electro-Mechanical System technology, and comprises an insulating substrate (2) in which at least two capacitor electrodes (3), (4) are formed on one surface (2a) in the state where they are insulated each other, an actuator (5) formed by insulating material and having an external shape to bridge over the respective capacitor electrodes (3), (4), the actuator (5) being such that a conductor which respectively constitutes capacitors between the conductor (6) and these capacitor electrodes (3), (4), and drive means (7) for allowing this actuator (5) to undergo an operation to come into contact with one principal surface (2a) of the insulating substrate (2) or to become away therefrom.

    Selfluminous display device having light emission sources having substantially non-overlapping spectra levels
    9.
    发明授权
    Selfluminous display device having light emission sources having substantially non-overlapping spectra levels 失效
    具有发光源的自发显示装置具有基本上不重叠的光谱水平

    公开(公告)号:US06222203B1

    公开(公告)日:2001-04-24

    申请号:US08878418

    申请日:1997-06-18

    IPC分类号: H01L3300

    摘要: A selfluminous display device having distinct blue (B), green (G) and red (R) light emission sources wherein the spectra of the light emission sources each have a narrow half band width (30 nm or less) at a level regarded as precursor delta functions, which do not mutually substantially overlap. Because light sources having spectra of limited peak values and extremely narrow limited widths are used, shape changes of the spectrum in each light source are suppressed in the wavelength space and can be regarded as purely magnitude changes. Therefore, it becomes possible to correct just by changing the strength for each light emission source, color reproducibility increases and there ceases to be any change over time in the colors.

    摘要翻译: 具有不同的蓝色(B),绿色(G)和红色(R)发光源的自发光显示装置,其中发光源的光谱各自具有被视为前体的水平的窄半带宽(30nm或更小) delta函数不相互重叠。 由于使用具有有限峰值和极窄限制宽度的光谱的光源,所以在每个光源中的光谱的形状变化在波长空间中被抑制,并且可以被认为是纯粹的幅度变化。 因此,可以通过改变每个发光源的强度进行校正,颜色再现性增加,并且在颜色中不再存在随时间的任何变化。

    Surface-emitting semiconductor light emitting device
    10.
    发明授权
    Surface-emitting semiconductor light emitting device 失效
    表面发射半导体发光器件

    公开(公告)号:US5909459A

    公开(公告)日:1999-06-01

    申请号:US30862

    申请日:1998-02-26

    摘要: A surface-emitting semiconductor light emitting device comprises an n-type ZnSe buffer layer, n-type ZnSSe layer, n-type ZnMgSSe cladding layer, n-type ZnSSe waveguide layer, active layer, p-type ZnSSe waveguide layer, p-type ZnMgSSe cladding layer, p-type ZnSSe layer,p-type ZnSe contact layer, p-type ZnSe/ZnTe MQW layer and p-type ZnTe contact layer, sequentially stacked on an n-type GaAs substrate. A grid-shaped p-side electrode and a Au film convering the p-side electrode are provided on the p-type ZnTe contact layer. An n-side electrode is provided on the back surface of the n-type GaAs substrate. The active layer has a single quantum well structure or a multiple quantum structure including ZnCdSe quantum well layers.

    摘要翻译: 表面发射半导体发光器件包括n型ZnSe缓冲层,n型ZnSSe层,n型ZnMgSSe覆层,n型ZnSSe波导层,有源层,p型ZnSSe波导层,p型 ZnMgSSe覆层,p型ZnSSe层,p型ZnSe接触层,p型ZnSe / ZnTe MQW层和p型ZnTe接触层,依次层叠在n型GaAs衬底上。 在p型ZnTe接触层上设置有形成p侧电极的栅状p侧电极和Au膜。 在n型GaAs衬底的背面设有n侧电极。 活性层具有单量子阱结构或包含ZnCdSe量子阱层的多量子结构。