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    Surface-emitting semiconductor light emitting device
    1.
    发明授权
    Surface-emitting semiconductor light emitting device 失效
    表面发射半导体发光器件

    公开(公告)号：US5909459A

    公开(公告)日：1999-06-01

    申请号：US30862

    申请日：1998-02-26

    申请人： Akira Ishibashi ,  Norikazu Nakayama ,  Satoru Kijima

    发明人： Akira Ishibashi ,  Norikazu Nakayama ,  Satoru Kijima

    IPC分类号： H01L33/06 ,  H01L33/12 ,  H01L33/28 ,  H01L33/38 ,  H01L33/42 ,  H01S5/00 ,  H01S5/042 ,  H01S5/183 ,  H01S5/327 ,  H01S5/347 ,  H01S3/19

    CPC分类号： H01L33/42 ,  B82Y20/00 ,  H01L33/14 ,  H01L33/28 ,  H01L33/38 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/327 ,  H01S5/347

    摘要： A surface-emitting semiconductor light emitting device comprises an n-type ZnSe buffer layer, n-type ZnSSe layer, n-type ZnMgSSe cladding layer, n-type ZnSSe waveguide layer, active layer, p-type ZnSSe waveguide layer, p-type ZnMgSSe cladding layer, p-type ZnSSe layer,p-type ZnSe contact layer, p-type ZnSe/ZnTe MQW layer and p-type ZnTe contact layer, sequentially stacked on an n-type GaAs substrate. A grid-shaped p-side electrode and a Au film convering the p-side electrode are provided on the p-type ZnTe contact layer. An n-side electrode is provided on the back surface of the n-type GaAs substrate. The active layer has a single quantum well structure or a multiple quantum structure including ZnCdSe quantum well layers.

    摘要翻译： 表面发射半导体发光器件包括n型ZnSe缓冲层，n型ZnSSe层，n型ZnMgSSe覆层，n型ZnSSe波导层，有源层，p型ZnSSe波导层，p型 ZnMgSSe覆层，p型ZnSSe层，p型ZnSe接触层，p型ZnSe / ZnTe MQW层和p型ZnTe接触层，依次层叠在n型GaAs衬底上。 在p型ZnTe接触层上设置有形成p侧电极的栅状p侧电极和Au膜。 在n型GaAs衬底的背面设有n侧电极。 活性层具有单量子阱结构或包含ZnCdSe量子阱层的多量子结构。

    Surface-emitting semiconductor light emitting device
    2.
    发明授权
    Surface-emitting semiconductor light emitting device 失效
    表面发射半导体发光器件

    公开(公告)号：US5617446A

    公开(公告)日：1997-04-01

    申请号：US499894

    申请日：1995-07-11

    申请人： Akira Ishibashi ,  Norikazu Nakayama ,  Satoru Kijima

    发明人： Akira Ishibashi ,  Norikazu Nakayama ,  Satoru Kijima

    IPC分类号： H01L33/06 ,  H01L33/12 ,  H01L33/28 ,  H01L33/38 ,  H01L33/42 ,  H01S5/00 ,  H01S5/042 ,  H01S5/183 ,  H01S5/327 ,  H01S5/347 ,  H01S3/19

    CPC分类号： H01L33/42 ,  B82Y20/00 ,  H01L33/14 ,  H01L33/28 ,  H01L33/38 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/327 ,  H01S5/347

    摘要： A surface-emitting semiconductor light emitting device comprises an n-type ZnSe buffer layer, n-type ZnSSe layer, n-type ZnMgSSe cladding layer, n-type ZnSSe waveguide layer, active layer, p-type ZnSSe waveguide layer, p-type ZnMgSSe cladding layer, p-type ZnSSe layer, p-type ZnSe contact layer, p-type ZnSe/ZnTe MQW layer and p-type ZnTe contact layer, sequentially stacked on an n-type GaAs substrate. A grid-shaped p-side electrode and a Au film convering the p-side electrode are provided on the p-type ZnTe contact layer. An n-side electrode is provided on the back surface of the n-type GaAs substrate. The active layer has a single quantum well structure or a multiple quantum structure including ZnCdSe quantum well layers.

    摘要翻译： 表面发射半导体发光器件包括n型ZnSe缓冲层，n型ZnSSe层，n型ZnMgSSe覆层，n型ZnSSe波导层，有源层，p型ZnSSe波导层，p型 ZnMgSSe覆层，p型ZnSSe层，p型ZnSe接触层，p型ZnSe / ZnTe MQW层和p型ZnTe接触层，依次层叠在n型GaAs衬底上。 在p型ZnTe接触层上设置有形成p侧电极的栅状p侧电极和Au膜。 在n型GaAs衬底的背面设有n侧电极。 活性层具有单量子阱结构或包含ZnCdSe量子阱层的多量子结构。

    METHOD FOR PRODUCING NONIONIC SURFACTANT
    5.
    发明申请
    METHOD FOR PRODUCING NONIONIC SURFACTANT 审中-公开
    生产非离子表面活性剂的方法

    公开(公告)号：US20120123170A1

    公开(公告)日：2012-05-17

    申请号：US13383418

    申请日：2010-08-03

    申请人： Keisuke Chiba ,  Yoshifumi Nishimoto ,  Tetsuaki Fukushima ,  Satoru Kijima

    发明人： Keisuke Chiba ,  Yoshifumi Nishimoto ,  Tetsuaki Fukushima ,  Satoru Kijima

    IPC分类号： C07C41/03

    CPC分类号： C08G65/2609 ,  C08G65/2696

    摘要： The present invention relates to the method for producing a nonionic surfactant, including the step (I) of reacting alcohol having a water content of not more than 0.1% by mass with ethylene oxide to obtain ethylene oxide-adduct, the step (II) of reacting the ethylene oxide-adduct with propylene oxide to obtain the alkylene oxide-adduct having a content of remaining propylene oxide of not more than 1000 mg/kg, and the step (III) of reacting the alkylene oxide-adduct with ethylene oxide to obtain the nonionic surfactant having each content of remaining ethylene oxide and remaining propylene oxide of not more than 5 mg/kg.

    摘要翻译： 本发明涉及非水性表面活性剂的制造方法，其包括将水含量为0.1质量％以下的醇与环氧乙烷反应的工序（I），得到环氧乙烷加合物，步骤（II） 使环氧乙烷加成物与环氧丙烷反应，得到残留环氧丙烷含量为1000mg / kg以下的环氧烷 - 加成物，和使烯化氧加成物与环氧乙烷反应的工序（III），得到 每个残留环氧乙烷和剩余环氧丙烷含量不大于5mg / kg的非离子表面活性剂。

    Method of fabricating nitride semiconductor and method of fabricating semiconductor device
    6.
    发明授权
    Method of fabricating nitride semiconductor and method of fabricating semiconductor device 有权
    制造氮化物半导体的方法和制造半导体器件的方法

    公开(公告)号：US06960482B2

    公开(公告)日：2005-11-01

    申请号：US10184902

    申请日：2002-07-01

    申请人： Osamu Matsumoto ,  Shinichi Ansai ,  Satoru Kijima

    发明人： Osamu Matsumoto ,  Shinichi Ansai ,  Satoru Kijima

    IPC分类号： H01L29/43 ,  C30B33/00 ,  H01L21/28 ,  H01L21/285 ,  H01L21/316 ,  H01L21/324 ,  H01S5/042 ,  H01S5/323 ,  H01L21/00

    CPC分类号： C30B33/00 ,  C30B29/403 ,  C30B29/406 ,  H01L21/28575 ,  H01L21/3245

    摘要： A method of fabricating a nitride semiconductor includes the steps of forming a nitride semiconductor doped with a p-type impurity, treating the surface of the nitride semiconductor in an atmosphere containing active oxygen to remove carbon remaining on the surface and form an oxide film thereon, and activating the p-type impurity to turn the conductive type of the nitride semiconductor into a p-type. Since carbon remaining on the surface of the nitride semiconductor is removed and the oxide film is formed thereon, the surface of the nitride semiconductor is prevented from being deteriorated by the activating treatment and the rate of activating the p-type impurity is enhanced. As a result, it is possible to reduce the contact resistance of the nitride semiconductor with an electrode and, hence, the variation in characteristics of the nitride semiconductor.

    摘要翻译： 一种制造氮化物半导体的方法包括以下步骤：形成掺杂有p型杂质的氮化物半导体，在含有活性氧的气氛中处理氮化物半导体的表面以除去残留在表面上的碳并在其上形成氧化膜， 并激活p型杂质以使氮化物半导体的导电类型变为p型。 由于去除残留在氮化物半导体的表面上的碳，并且在其上形成氧化物膜，所以通过激活处理来防止氮化物半导体的表面劣化，并且提高了p型杂质的激活速率。 结果，可以降低氮化物半导体与电极的接触电阻，并因此降低氮化物半导体的特性的变化。

    Process for producing phosphate
    7.
    发明授权
    Process for producing phosphate 失效
    磷酸盐生产工艺

    公开(公告)号：US07196213B2

    公开(公告)日：2007-03-27

    申请号：US10742817

    申请日：2003-12-23

    申请人： Akira Matsunaga ,  Satoru Kijima

    发明人： Akira Matsunaga ,  Satoru Kijima

    IPC分类号： C07C9/02

    CPC分类号： C07F9/025 ,  C07F9/091

    摘要： Provided are a process for producing a phosphate and a process for stabilizing a phosphate, the phosphate being an acid-form phosphate wherein an organic hydroxy compound is an alkylene oxide adduct. A production process of a phosphate and a stabilization process of a phosphate, including the step 1 of reacting an organic hydroxy compound represented by the following general formula (I) with a phosphorylating agent: R1—O—(AO)n—H  (I) wherein R1 represents a straight or branched alkyl group or alkenyl group having 6 to 36 carbon atoms, AO represents an oxyalkylene group having 2 to 4 carbon atoms, and n is a number of 0.1 to 100 on the average; the step 2 of purifying the reaction product obtained in the step 1 until the content of the organic hydroxy compound that has not yet reacted becomes 2% or less by weight; and the step 3 of adding water to the purified product obtained in the step 2 at such a ratio that the content of water in the final product is from 0.5 to 10% by weight.

    摘要翻译： 提供磷酸盐的制造方法和磷酸盐稳定化方法，磷酸盐为酸式磷酸盐，其中有机羟基化合物为烯化氧加合物。 磷酸盐的制造方法和磷酸盐稳定化方法，包括使由以下通式（I）表示的有机羟基化合物与磷酸化Ag反应的步骤1

    Semiconductor laser device
    8.
    发明授权
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号：US06961359B2

    公开(公告)日：2005-11-01

    申请号：US10655678

    申请日：2003-09-05

    申请人： Tsuyoshi Tojo ,  Shiro Uchida ,  Satoru Kijima

    发明人： Tsuyoshi Tojo ,  Shiro Uchida ,  Satoru Kijima

    IPC分类号： H01S5/22 ,  H01S5/323 ,  H01S5/00

    CPC分类号： H01S5/22 ,  H01S5/0655 ,  H01S5/2218 ,  H01S5/2219 ,  H01S5/32341

    摘要： Disclosed is a nitride based III-V group compound semiconductor laser device of ridge waveguide type with an oscillation wavelength of about 410 nm which has a low driving voltage, a high half-width value θ// of a FFP in a direction horizontal to a hetero interface, and a high kink level (i.e., good light output-injected current characteristics over the high-output range). This laser device is similar in structure to the related-art semiconductor laser device except for the current constricting layer formed in a ridge. It has a stacked film composed of an SiO2 film (600 Å thick) and an amorphous Si film (300 Å thick) which are formed on the SiO2 film by vapor deposition. The stacked film covers both sides of the ridge and a p-AlGaN cladding layer extending sideward from the base of the ridge. The SiO2 film and Si film have respective thicknesses which are established such that the absorption coefficient of fundamental horizontal lateral mode is larger than the absorption coefficient of primary horizontal lateral mode. This structure results in a higher kink level, while suppressing the high-order horizontal lateral mode, a larger effective refractive index difference Δn, and a larger value of θ// without the necessity for reducing the ridge width.

    摘要翻译： 公开了一种振荡波长约410nm的脊波导型氮化物III-V族化合物半导体激光装置，其具有低驱动电压，高半值宽度值θ/ FFP在与异质界面水平的方向上，并具有高扭结水平（即，在高输出范围内的良好的光输出注入电流特性）。 除了形成在脊中的电流收缩层之外，该激光装置的结构类似于现有技术的半导体激光装置。 它具有由SiO 2膜（600埃）和非晶硅膜（300埃）组成的叠层膜，它们通过蒸气形成在SiO 2膜上 沉积 堆叠的膜覆盖脊的两侧，并且从脊的底部向侧延伸的p-AlGaN包覆层。 SiO 2膜和Si膜具有各自的厚度，其被建立为使得基本水平横向模式的吸收系数大于主水平横向模式的吸收系数。 这种结构导致较高的扭结水平，同时抑制高阶水平横向模式，更大的有效折射率差Deltan和较大的θθ值，而不需要减小脊宽度 。

    Nonionic surfactant and surfactant composition comprising the same
    10.
    发明授权
    Nonionic surfactant and surfactant composition comprising the same 有权
    非离子表面活性剂和包含其的表面活性剂组合物

    公开(公告)号：US08476217B2

    公开(公告)日：2013-07-02

    申请号：US13502859

    申请日：2010-10-18

    申请人： Masato Nomura ,  Satoru Kijima ,  Katsuhisa Inoue ,  Tetsuaki Fukushima ,  Tomoya Sato

    发明人： Masato Nomura ,  Satoru Kijima ,  Katsuhisa Inoue ,  Tetsuaki Fukushima ,  Tomoya Sato

    IPC分类号： C11D1/72 ,  C11D1/722 ,  C11D1/825

    CPC分类号： C11D1/722

    摘要： The present invention provides the nonionic surfactant represented by the formula (1): R—O—(PO)m-(EO)n—H  (1) wherein, R represents a saturated linear-chain hydrocarbon group having 8 to 18 carbon atoms, and n-octyl groups are 20 to 80% by mole of the saturated linear-chain hydrocarbon groups, n-decyl groups are 0 to 10% by mole of the saturated linear-chain hydrocarbon groups, and saturated linear-chain hydrocarbon groups having 12 to 18 carbon atoms are 20 to 80% by mole of the saturated linear-chain hydrocarbon groups; PO represents a propyleneoxy group; EO represents an ethyleneoxy group; m represents an average addition mole number of propyleneoxy groups ranging from 0.1 to 5; n represents an average addition mole number of ethyleneoxy groups ranging from 0.5 to 20; and (PO)m and (EO)n are bonded as blocks in this order.

    摘要翻译： 本发明提供由式（1）表示的非离子型表面活性剂：RO-（PO）m-（EO）nH（1）其中，R表示碳原子数8〜18的饱和直链烃基， 辛基的饱和直链烃基为20〜80摩尔％，正癸基为饱和直链烃基的0〜10摩尔％，碳原子数为12〜18的饱和直链烃基 原子为饱和直链烃基的20〜80摩尔％ PO表示丙烯氧基; EO表示乙烯氧基; m表示丙烯氧基的平均加成摩尔数为0.1〜5; n表示0.5〜20的乙烯氧基的平均加成摩尔数; 和（PO）m和（EO）n以该顺序键合。