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    Surface-emitting semiconductor light emitting device
    1.
    发明授权
    Surface-emitting semiconductor light emitting device 失效
    表面发射半导体发光器件

    公开(公告)号：US5909459A

    公开(公告)日：1999-06-01

    申请号：US30862

    申请日：1998-02-26

    申请人： Akira Ishibashi ,  Norikazu Nakayama ,  Satoru Kijima

    发明人： Akira Ishibashi ,  Norikazu Nakayama ,  Satoru Kijima

    IPC分类号： H01L33/06 ,  H01L33/12 ,  H01L33/28 ,  H01L33/38 ,  H01L33/42 ,  H01S5/00 ,  H01S5/042 ,  H01S5/183 ,  H01S5/327 ,  H01S5/347 ,  H01S3/19

    CPC分类号： H01L33/42 ,  B82Y20/00 ,  H01L33/14 ,  H01L33/28 ,  H01L33/38 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/327 ,  H01S5/347

    摘要： A surface-emitting semiconductor light emitting device comprises an n-type ZnSe buffer layer, n-type ZnSSe layer, n-type ZnMgSSe cladding layer, n-type ZnSSe waveguide layer, active layer, p-type ZnSSe waveguide layer, p-type ZnMgSSe cladding layer, p-type ZnSSe layer,p-type ZnSe contact layer, p-type ZnSe/ZnTe MQW layer and p-type ZnTe contact layer, sequentially stacked on an n-type GaAs substrate. A grid-shaped p-side electrode and a Au film convering the p-side electrode are provided on the p-type ZnTe contact layer. An n-side electrode is provided on the back surface of the n-type GaAs substrate. The active layer has a single quantum well structure or a multiple quantum structure including ZnCdSe quantum well layers.

    摘要翻译： 表面发射半导体发光器件包括n型ZnSe缓冲层，n型ZnSSe层，n型ZnMgSSe覆层，n型ZnSSe波导层，有源层，p型ZnSSe波导层，p型 ZnMgSSe覆层，p型ZnSSe层，p型ZnSe接触层，p型ZnSe / ZnTe MQW层和p型ZnTe接触层，依次层叠在n型GaAs衬底上。 在p型ZnTe接触层上设置有形成p侧电极的栅状p侧电极和Au膜。 在n型GaAs衬底的背面设有n侧电极。 活性层具有单量子阱结构或包含ZnCdSe量子阱层的多量子结构。

    Surface-emitting semiconductor light emitting device
    2.
    发明授权
    Surface-emitting semiconductor light emitting device 失效
    表面发射半导体发光器件

    公开(公告)号：US5617446A

    公开(公告)日：1997-04-01

    申请号：US499894

    申请日：1995-07-11

    申请人： Akira Ishibashi ,  Norikazu Nakayama ,  Satoru Kijima

    发明人： Akira Ishibashi ,  Norikazu Nakayama ,  Satoru Kijima

    IPC分类号： H01L33/06 ,  H01L33/12 ,  H01L33/28 ,  H01L33/38 ,  H01L33/42 ,  H01S5/00 ,  H01S5/042 ,  H01S5/183 ,  H01S5/327 ,  H01S5/347 ,  H01S3/19

    CPC分类号： H01L33/42 ,  B82Y20/00 ,  H01L33/14 ,  H01L33/28 ,  H01L33/38 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/327 ,  H01S5/347

    摘要： A surface-emitting semiconductor light emitting device comprises an n-type ZnSe buffer layer, n-type ZnSSe layer, n-type ZnMgSSe cladding layer, n-type ZnSSe waveguide layer, active layer, p-type ZnSSe waveguide layer, p-type ZnMgSSe cladding layer, p-type ZnSSe layer, p-type ZnSe contact layer, p-type ZnSe/ZnTe MQW layer and p-type ZnTe contact layer, sequentially stacked on an n-type GaAs substrate. A grid-shaped p-side electrode and a Au film convering the p-side electrode are provided on the p-type ZnTe contact layer. An n-side electrode is provided on the back surface of the n-type GaAs substrate. The active layer has a single quantum well structure or a multiple quantum structure including ZnCdSe quantum well layers.

    摘要翻译： 表面发射半导体发光器件包括n型ZnSe缓冲层，n型ZnSSe层，n型ZnMgSSe覆层，n型ZnSSe波导层，有源层，p型ZnSSe波导层，p型 ZnMgSSe覆层，p型ZnSSe层，p型ZnSe接触层，p型ZnSe / ZnTe MQW层和p型ZnTe接触层，依次层叠在n型GaAs衬底上。 在p型ZnTe接触层上设置有形成p侧电极的栅状p侧电极和Au膜。 在n型GaAs衬底的背面设有n侧电极。 活性层具有单量子阱结构或包含ZnCdSe量子阱层的多量子结构。

    Semiconductor laser
    4.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US5640409A

    公开(公告)日：1997-06-17

    申请号：US591832

    申请日：1996-01-25

    申请人： Satoshi Ito ,  Toyoharu Ohata ,  Akira Ishibashi ,  Norikazu Nakayama

    发明人： Satoshi Ito ,  Toyoharu Ohata ,  Akira Ishibashi ,  Norikazu Nakayama

    IPC分类号： H01L33/28 ,  H01S5/042 ,  H01S5/22 ,  H01S5/32 ,  H01S5/327 ,  H01S5/347 ,  H01S3/19

    CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01S5/327 ,  H01S5/347 ,  H01S5/0421 ,  H01S5/2214 ,  H01S5/3211

    摘要： A semiconductor light-emitting device capable of emitting blue to green light is disclosed. The device comprises a first cladding layer of the first conduction type stacked on a compound semiconductor substrate and made of ZnMgSSe compound semiconductor; an active layer stacked on the first cladding layer; a second cladding layer of the second conduction type stacked on the active layer and made of a ZnMgSSe compound semiconductor; and ZnSSe compound semiconductor layers provided on the second cladding layer and/or between the compound semiconductor substrate and the first cladding layer. The device has good optical confinement characteristics and carrier confinement characteristics, generates only a small amount of heat during its operation, and is fabricated easily.

    摘要翻译： 公开了能够发射蓝光到绿光的半导体发光器件。 该器件包括叠置在化合物半导体衬底上并由ZnMgSSe化合物半导体制成的第一导电类型的第一覆层; 堆叠在所述第一包层上的有源层; 第二导电类型的第二覆层层叠在有源层上并由ZnMgSSe化合物半导体制成; 和ZnSSe化合物半导体层，设置在第二覆层和/或化合物半导体基板与第一包层之间。 该装置具有良好的光学限制特性和载流子限制特性，在其运行期间仅产生少量热量，并且易于制造。

    Semiconductor display device and a method of fabricating the same
    5.
    发明授权
    Semiconductor display device and a method of fabricating the same 失效
    半导体显示装置及其制造方法

    公开(公告)号：US5597740A

    公开(公告)日：1997-01-28

    申请号：US498438

    申请日：1995-07-05

    申请人： Satoshi Ito ,  Futoshi Hiei ,  Akira Ishibashi ,  Atsushi Toda ,  Norikazu Nakayama

    发明人： Satoshi Ito ,  Futoshi Hiei ,  Akira Ishibashi ,  Atsushi Toda ,  Norikazu Nakayama

    IPC分类号： H01L27/15 ,  H01L33/28 ,  H01L21/265

    CPC分类号： H01L33/28 ,  H01L27/156 ,  Y10S438/925 ,  Y10S438/944

    摘要： A light emitting device and a method of fabricating the same in which a first cladding layer is formed on a substrate, then red, green and blue light emitting portions each made of II-VI semiconductor are formed in a horizontal direction with respect to a surface of the substrate on the first cladding layer, then a second cladding layer is formed on the light emitting portions, and the red, green and blue light emitting portions are electrically separated from each other so that three primary color light emitting portions of a self luminous type are formed on the same substrate through single crystal growth process by changing composition of a compound semiconductor layer.

    摘要翻译： 一种发光器件及其制造方法，其中在衬底上形成第一覆层，然后在水平方向上相对于表面形成由II-VI半导体制成的红色，绿色和蓝色发光部分 在第一包层上形成基板，然后在发光部分上形成第二包覆层，将红色，绿色和蓝色发光部分彼此电分离，使得自发光的三原色发光部分 通过改变化合物半导体层的组成，通过单晶生长工艺在相同的衬底上形成类型。

    Semiconductor light emitting device, its manufacturing method and optical recording and/or reproducing apparatus
    7.
    发明授权
    Semiconductor light emitting device, its manufacturing method and optical recording and/or reproducing apparatus 失效
    半导体发光器件，其制造方法和光学记录和/或再现装置

    公开(公告)号：US5898662A

    公开(公告)日：1999-04-27

    申请号：US967095

    申请日：1997-11-10

    申请人： Akira Ishibashi ,  Satoshi Taniguchi ,  Tomonori Hino ,  Takashi Kobayashi ,  Kazushi Nakano ,  Norikazu Nakayama

    发明人： Akira Ishibashi ,  Satoshi Taniguchi ,  Tomonori Hino ,  Takashi Kobayashi ,  Kazushi Nakano ,  Norikazu Nakayama

    IPC分类号： H01L33/00 ,  H01L33/02 ,  H01L33/28 ,  H01S5/042 ,  H01S5/32 ,  H01S5/327 ,  H01S5/347 ,  H01S3/18

    CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/0087 ,  H01L33/025 ,  H01S5/347 ,  H01S2301/173 ,  H01S5/0421 ,  H01S5/3203 ,  H01S5/327

    摘要： A semiconductor light emitting device comprises: a compound semiconductor substrate; an n-type cladding layer on the compound semiconductor substrate; an active layer on the n-type cladding layer; a p-type cladding layer on the active layer: and a p-type contact layer on the p-type cladding layer, the n-type cladding layer, the active layer, the p-type cladding layer and the p-type contact layer being made of II-VI compound semiconductors containing at least one of group II elements selected from the group consisting of Zn, Cd, Mg, Hg and Be and at least one of group VI elements selected from the group consisting of S, Se, Te and O, characterized in that at least the active layer has undulations and at least the p-type layer is flat. A method for manufacturing a semiconductor light emitting device having: a compound semiconductor substrate; an n-type cladding layer on the compound semiconductor substrate; an active layer on the n-type cladding layer; and a p-type cladding layer on the active layer, the n-type cladding layer, the active layer and the p-type cladding layer being made of II-VI compound semiconductors containing at least one of group II elements selected from the group consisting of Zn, Cd, Mg, Hg and Be and at least one of group VI elements selected from the group consisting of S, Se, Te and O, characterized in that the n-type cladding layer, the active layer and said p-type cladding layer are grown by varying, for the respective layers, the ratio of the molecular beam intensity of the group VI element relative to the molecular beam intensity of the group II element.

    摘要翻译： 一种半导体发光器件包括：化合物半导体衬底; 在化合物半导体衬底上的n型覆层; 在n型包覆层上的有源层; 有源层上的p型覆层和p型覆层的p型接触层，n型包覆层，有源层，p型包覆层和p型接触层 由含有选自Zn，Cd，Mg，Hg和Be中的II族元素中的至少一种的II-VI化合物半导体和选自S，Se，Te中的至少一种VI族元素中的至少一种 和O，其特征在于至少所述活性层具有起伏并且至少所述p型层是平坦的。 一种半导体发光器件的制造方法，其具有：化合物半导体基板; 在化合物半导体衬底上的n型覆层; 在n型包覆层上的有源层; 和p型包覆层，n型包覆层，有源层和p型覆层由含有选自以下的II族元素中的至少一种的II-VI族化合物半导体构成： 的Zn，Cd，Mg，Hg和Be以及选自S，Se，Te和O的VI族元素中的至少一种，其特征在于，所述n型包覆层，所述有源层和所述p型 通过对于各层改变VI族元素的分子束强度相对于II族元素的分子束强度的比例，生长包覆层。

    Semiconductor light emitting device
    8.
    发明授权
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号：US5732099A

    公开(公告)日：1998-03-24

    申请号：US686473

    申请日：1996-07-25

    申请人： Takayuki Kawasumi ,  Norikazu Nakayama ,  Akira Ishibashi ,  Yoshifumi Mori

    发明人： Takayuki Kawasumi ,  Norikazu Nakayama ,  Akira Ishibashi ,  Yoshifumi Mori

    IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S5/327 ,  H01S5/347 ,  H01S3/19 ,  H01L33/00

    CPC分类号： H01L33/24 ,  B82Y20/00 ,  H01L33/28 ,  H01S5/2232 ,  H01S5/347 ,  H01S5/2235 ,  H01S5/2237 ,  H01S5/327

    摘要： A p-type GaAs current block layer is stacked on a (100)-oriented n-type GaAs substrate, and a stripe-shaped groove is formed in the p-type GaAs current block layer to extend in the direction. Side surfaces of the groove has the maximum inclination not larger than 60.degree.. The thickness of the p-type GaAs current block layer is 1.5 .mu.m or more. Stacked on the structured substrate having the current narrowed mechanism via an n-type ZnSe buffer layer are an n-type ZnMgSSe cladding layer, n-type ZnSSe waveguide layer, active layer, p-type ZnSSe waveguide layer, p-type ZnMgSSe cladding layer, and others, to establish an index-guided inner-striped semiconductor laser having SCH structure and CSPW structure.

    摘要翻译： 在（100）取向的n型GaAs衬底上堆叠p型GaAs电流阻挡层，并且在p型GaAs电流阻挡层中形成条形槽，以沿<01-1>方向延伸 。 槽的侧面最大倾角不大于60°。 p型GaAs电流阻挡层的厚度为1.5μm以上。 通过n型ZnSe缓冲层堆叠在具有电流变窄机构的结构化衬底上是n型ZnMgSSe包层，n型ZnSSe波导层，有源层，p型ZnSSe波导层，p型ZnMgSSe覆层 等，建立了具有SCH结构和CSPW结构的折射率引导内条纹半导体激光器。

    Selfluminous display device having light emission sources having substantially non-overlapping spectra levels
    9.
    发明授权
    Selfluminous display device having light emission sources having substantially non-overlapping spectra levels 失效
    具有发光源的自发显示装置具有基本上不重叠的光谱水平

    公开(公告)号：US06222203B1

    公开(公告)日：2001-04-24

    申请号：US08878418

    申请日：1997-06-18

    申请人： Akira Ishibashi ,  Norikazu Nakayama

    发明人： Akira Ishibashi ,  Norikazu Nakayama

    IPC分类号： H01L3300

    CPC分类号： B82Y20/00 ,  H01L27/156 ,  H01S5/327 ,  H01S5/34333 ,  H01S5/4087 ,  H01S5/423

    摘要： A selfluminous display device having distinct blue (B), green (G) and red (R) light emission sources wherein the spectra of the light emission sources each have a narrow half band width (30 nm or less) at a level regarded as precursor delta functions, which do not mutually substantially overlap. Because light sources having spectra of limited peak values and extremely narrow limited widths are used, shape changes of the spectrum in each light source are suppressed in the wavelength space and can be regarded as purely magnitude changes. Therefore, it becomes possible to correct just by changing the strength for each light emission source, color reproducibility increases and there ceases to be any change over time in the colors.

    摘要翻译： 具有不同的蓝色（B），绿色（G）和红色（R）发光源的自发光显示装置，其中发光源的光谱各自具有被视为前体的水平的窄半带宽（30nm或更小） delta函数不相互重叠。 由于使用具有有限峰值和极窄限制宽度的光谱的光源，所以在每个光源中的光谱的形状变化在波长空间中被抑制，并且可以被认为是纯粹的幅度变化。 因此，可以通过改变每个发光源的强度进行校正，颜色再现性增加，并且在颜色中不再存在随时间的任何变化。

    Semiconductor display device with red, green and blue emission
    10.
    发明授权
    Semiconductor display device with red, green and blue emission 失效
    具有红色，绿色和蓝色发射的半导体显示装置

    公开(公告)号：US5459337A

    公开(公告)日：1995-10-17

    申请号：US197310

    申请日：1994-02-16

    申请人： Satoshi Ito ,  Futoshi Hiei ,  Akira Ishibashi ,  Atsushi Toda ,  Norikazu Nakayama

    发明人： Satoshi Ito ,  Futoshi Hiei ,  Akira Ishibashi ,  Atsushi Toda ,  Norikazu Nakayama

    IPC分类号： H01L27/15 ,  H01L33/28 ,  H01L33/00

    CPC分类号： H01L33/28 ,  H01L27/156 ,  Y10S438/925 ,  Y10S438/944

    摘要： A light emitting device and a method of fabricating the same in which a first cladding layer is formed on a substrate, then red, green and blue light emitting portions each made of II-VI semiconductor are formed in a horizontal direction with respect to a surface of the substrate on the first cladding layer, then a second cladding layer is formed on the light emitting portions, and the red, green and blue light emitting portions are electrically separated from each other so that three primary color light emitting portions of a self luminous type are formed on the same substrate through single crystal growth process by changing composition of a compound semiconductor layer.

    摘要翻译： 一种发光器件及其制造方法，其中在衬底上形成第一覆层，然后在水平方向上相对于表面形成由II-VI半导体制成的红色，绿色和蓝色发光部分 在第一包层上形成基板，然后在发光部分上形成第二包覆层，将红色，绿色和蓝色发光部分彼此电分离，使得自发光的三原色发光部分 通过改变化合物半导体层的组成，通过单晶生长工艺在相同的衬底上形成类型。