摘要:
A probe memory device carries out positioning with the use of a servo pattern provided in a servo area on a recording medium, and the recording medium and a probe head section are reciprocatingly moved (scan-moved) by vibration at a specific frequency in a one-axis direction. At this time, based on information from the servo area, relative position information between the recording medium and the probe head section is acquired, the relative position information is processed at a control section, and then, feedback control is carried out for carrying out position correction relative to an actuator.
摘要:
An information recording/reproducing device according to an example of the present invention includes first and second heads, a recording medium having a data area from which recording data is read by the first head and a servo burst area from which a servo burst signal is read by the second head, a driver which performs positioning of the second head based on the servo burst signal, and a resistor which covers a surface of the servo burst area and does not cover a surface of the data area. The recording data and the servo burst signal are recorded by a pulse signal.
摘要:
A probe memory device carries out positioning with the use of a servo pattern provided in a servo area on a recording medium, and the recording medium and a probe head section are reciprocatingly moved (scan-moved) by vibration at a specific frequency in a one-axis direction. At this time, based on information from the servo area, relative position information between the recording medium and the probe head section is acquired, the relative position information is processed at a control section, and then, feedback control is carried out for carrying out position correction relative to an actuator.
摘要:
According to one embodiment, an information recording and reproducing device includes a first layer, a second layer and a recording layer. The recording layer is provided between the first layer and the second layer and being capable of reversibly changing between a first state having a first resistance and a second state having a second resistance higher than the first resistance. The recording layer includes a first compound layer and a second compound layer. The first compound layer contains a first compound. The first compound includes a first cation element and a second cation element of a type different from the first cation element. The second compound layer contains a second compound. The second compound includes a transition element having a d-orbital partially filled with electron, and the second compound includes a void site capable of storing at least one of the first cation element and the second cation element.
摘要:
An information recording/reproducing device according to an aspect of the present invention includes a recording layer, and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer includes a first chemical compound having one of a Wolframite structure and a Scheelite structure.
摘要:
An information recording and reproducing apparatus, includes: a recording layer including a first layer including a first compound, the first compound being a conjugated compound including at least two types of cation elements, at least one selected from the cation elements being a transition element having a d orbit incompletely filled by electrons, a shortest distance between adjacent cation elements being not more than 0.32 nm; a voltage application unit that applies a voltage to the recording layer, produces a phase change in the recording layer, and records information; an electrode layer that applies a voltage to the recording layer; and an orientation control layer provided between the recording layer and the electrode layer to control an orientation of the recording layer.
摘要:
According to one embodiment, an information recording and reproducing device includes a first layer, a second layer and a recording layer. The recording layer is provided between the first and second layers and is capable of reversibly transitioning between a first state and a second state with a resistance higher than in the first state. One of the first and second layers includes a resistivity distribution layer perpendicular to a stacking direction of the first and second layers, and the recording layer. The resistivity distribution layer includes a low and a high resistivity portion. Resistivity of the high resistivity portion is higher than resistivity of the low resistivity portion. The low resistivity portion contains a transition element identical to a transition element contained in the high resistivity portion.
摘要:
According to one embodiment, a nonvolatile memory device includes a stacked body including a first layer, a second layer and a recording layer. The recording layer is provided between the first layer and the second layer. The recording layer is capable of reversibly changing between a first state and a second state having a resistance higher than a resistance in the first state by a current supplied via the first layer and the second layer. The recording layer includes a first portion and a second portion provided in a plane of a major surface of the recording layer. The second portion has a nitrogen amount higher than a nitrogen amount in the first portion.
摘要:
According to one embodiment, an information recording and reproducing device includes a resistive layer directly or indirectly added to a recording layer and having electric resistivity larger than electric resistivity in the low-resistance state of the recording layer. A first compound contained in the recording layer comprises a composite compound includes two or more kinds of cationic elements, at least one of the two or more kinds of cationic elements is a transition element having a d orbit filled incompletely with electrons, a shortest distance between cationic elements adjacent to each other is 0.32 nm or less.
摘要:
An information recording/reproducing device includes a recording layer, and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer includes a first chemical compound having a spinel structure. The recording layer is AxMyX4 (0.1≦x≦2.2, 1.0≦y≦2.0), where A includes one selected from a group of Zn, Cd and Hg, M includes one selected from a group of Ti, Zr, Hf, V, Nb and Ta, and X includes O.