公开(公告)号：US20070250536A1

公开(公告)日：2007-10-25

申请号：US11660979

申请日：2005-08-24

申请人： Akihiro Tanaka ,  Hideaki Nakaoka ,  Hideki Kagemoto ,  Toru Kawaguchi ,  Yasuyuki Sonoda

发明人： Akihiro Tanaka ,  Hideaki Nakaoka ,  Hideki Kagemoto ,  Toru Kawaguchi ,  Yasuyuki Sonoda

IPC分类号： G06F15/00

CPC分类号： H04N7/163 ,  G06F21/10 ,  H04L12/2803 ,  H04L12/2812 ,  H04L67/125 ,  H04N21/234327 ,  H04N21/4627

摘要： A content start control device that changes the resource to be started first within a content in accordance with the type of license purchased, and enables a plurality of viewing modes for one content is provided. The content start instruction reception unit 201 of the content start control device 100 receives a start instruction for a content, and sends the content ID of the content to the license information verification unit 211. The license information verification unit 211 obtains information on whether or not a license has been purchased, by using license information obtained from the license information storage unit 221 and the content ID obtained from the content start instruction reception unit 201. The start resource selection unit 212 selects the start resource of the content which is associated with the license, by using start resource information, and the resource starting unit 213 starts the resource selected by the start resource selection unit 212.

摘要翻译： 一种内容开始控制装置，其根据所购买的许可的类型，在内容中首先改变要开始的资源，并且提供一个内容的多个观看模式。 内容开始控制装置100的内容开始指示接收部201接收内容的开始指示，并将内容的内容ID发送到许可信息验证部211。 许可证信息验证单元211通过使用从许可信息存储单元221获得的许可信息和从内容开始指令接收单元201获得的内容ID，获得关于是否已经购买了许可证的信息。 启动资源选择单元212通过使用启动资源信息来选择与许可相关联的内容的起始资源，并且资源开始单元213启动由起始资源选择单元212选择的资源。

公开(公告)号：US09595663B2

公开(公告)日：2017-03-14

申请号：US14479180

申请日：2014-09-05

申请人： Masatoshi Yoshikawa ,  Yasuyuki Sonoda ,  Satoshi Seto ,  Shuichi Tsubata ,  Kazuhiro Tomioka

发明人： Masatoshi Yoshikawa ,  Yasuyuki Sonoda ,  Satoshi Seto ,  Shuichi Tsubata ,  Kazuhiro Tomioka

IPC分类号： H01L43/12 ,  H01L27/22 ,  H01L43/08 ,  H01L43/02

CPC分类号： H01L43/12 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

摘要： According to one embodiment, a magnetic memory includes a transistor having first and second diffusion layers in a semiconductor substrate and a gate electrode between the first and second diffusion layers, a first insulating layer on the semiconductor substrate, the first insulating layer covering the transistor, a first contact plug in the first insulating layer, the first contact plug connected to the first diffusion layer, a second contact plug in the first insulating layer, the second contact plug connected to the second diffusion layer, a magnetoresistive element on the first insulating layer, the magnetoresistive element connected to the first contact plug, an electrode on the magnetoresistive element, and an impurity region in the first insulating layer, the second contact plug, and the electrode.

摘要翻译： 根据一个实施例，磁存储器包括在半导体衬底中具有第一和第二扩散层的晶体管和位于第一和第二扩散层之间的栅电极，半导体衬底上的第一绝缘层，覆盖晶体管的第一绝缘层， 第一绝缘层中的第一接触插塞，连接到第一扩散层的第一接触插塞，第一绝缘层中的第二接触插塞，连接到第二扩散层的第二接触插塞，第一绝缘层上的磁阻元件 连接到第一接触插塞的磁阻元件，磁阻元件上的电极以及第一绝缘层，第二接触插塞和电极中的杂质区域。

公开(公告)号：US20120241879A1

公开(公告)日：2012-09-27

申请号：US13234608

申请日：2011-09-16

申请人： Daisuke IKENO ,  Koji Yamakawa ,  Katsuaki Natori ,  Yasuyuki Sonoda

发明人： Daisuke IKENO ,  Koji Yamakawa ,  Katsuaki Natori ,  Yasuyuki Sonoda

IPC分类号： H01L29/82 ,  H01L21/8246

CPC分类号： H01L27/228 ,  B82Y40/00 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： According to one embodiment, a semiconductor device, includes a magneto resistive element including a first magnetic layer, a first interface magnetic layer, a nonmagnetic layer, a second interface magnetic layer and a second magnetic layer as a stacked structure in order; and a metal layer including first metal atoms, second metal atoms and boron atoms, the metal layer being provided at least one region selected from under the first magnetic, between the first magnetic layer and the first interface magnetic layer, between the second interface magnetic layer and the second magnetic layer, and upper the second magnetic layer.

摘要翻译： 根据一个实施例，半导体器件依次包括第一磁性层，第一界面磁性层，非磁性层，第二界面磁性层和第二磁性层作为堆叠结构的磁阻元件; 以及金属层，其包括第一金属原子，第二金属原子和硼原子，所述金属层设置在所述第一磁性层和所述第一界面磁性层之间的所述第一磁性体的下方的至少一个区域之间，所述第二界面磁性层 和第二磁性层，并且在第二磁性层上方。

公开(公告)号：US06622004B1

公开(公告)日：2003-09-16

申请号：US09588182

申请日：2000-06-07

申请人： Yasuyuki Sonoda ,  Keisei Yamamuro

发明人： Yasuyuki Sonoda ,  Keisei Yamamuro

IPC分类号： H04H100

CPC分类号： H04N21/443 ,  H04H20/16 ,  H04H60/25 ,  H04H60/73 ,  H04N21/235 ,  H04N21/23617 ,  H04N21/2362 ,  H04N21/26266 ,  H04N21/4349 ,  H04N21/435

摘要： An object is to make efficient pre-reading possible even in receivers having little memory for receiving. A CPU 147 acquires data size in each module by referring module control information for a received DII, (step S39). The data sizes of the modules are compared with the remaining memory in a RAM 144 (step S45), and modules smaller than the remaining memory are pre-read into the RAM 144 (step S47). When a pre-read flag is not on, then no pre-reading is done even when a module is smaller than the remaining memory. Thus data that are updated from time to time can be excluded from being subject to pre-reading.

摘要翻译： 即使在接收器少的接收器中，也有可能使读取成为有效的预读。 CPU147通过引用接收的DII的模块控制信息来获取每个模块中的数据大小（步骤S39）。 将模块的数据大小与RAM 144中的剩余存储器进行比较（步骤S45），并将小于剩余存储器的模块预读入RAM 144（步骤S47）。 当预读取标志未打开时，即使模块小于剩余存储器，也不会进行预读。 因此，不时更新的数据可能被排除在预读之外。

公开(公告)号：US20120326251A1

公开(公告)日：2012-12-27

申请号：US13425328

申请日：2012-03-20

申请人： Koji Yamakawa ,  Daisuke Ikeno ,  Yasuyuki Sonoda

发明人： Koji Yamakawa ,  Daisuke Ikeno ,  Yasuyuki Sonoda

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  H01L27/222

摘要： According to one embodiment, a semiconductor memory device includes plural magneto-resistance elements being two-dimensionally arrayed on a semiconductor substrate. In the semiconductor memory device, each of the magneto-resistance elements includes: a first magnetic layer formed on the semiconductor substrate; a non-magnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the non-magnetic layer, and an insulating film buried between the magneto-resistance elements adjacent to each other, a powder made of a metallic material or a magnetic material being dispersed in the insulating film.

摘要翻译： 根据一个实施例，半导体存储器件包括二维排列在半导体衬底上的多个磁阻元件。 在半导体存储器件中，每个磁阻元件包括：形成在半导体衬底上的第一磁性层; 形成在所述第一磁性层上的非磁性层; 以及形成在非磁性层上的第二磁性层和埋在彼此相邻的磁阻元件之间的绝缘膜，由金属材料或磁性材料制成的粉末分散在绝缘膜中。

公开(公告)号：US20120217476A1

公开(公告)日：2012-08-30

申请号：US13407630

申请日：2012-02-28

申请人： Daisuke Ikeno ,  Koji Yamakawa ,  Katsuaki Natori ,  Yasuyuki Sonoda

发明人： Daisuke Ikeno ,  Koji Yamakawa ,  Katsuaki Natori ,  Yasuyuki Sonoda

IPC分类号： H01L43/02 ,  H01L43/12

CPC分类号： H01L43/02 ,  G11C11/161 ,  H01L27/226 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： According to one embodiment, a memory device with magnetroresistive effect element is disclosed. The element includes first metal magnetic film (MMF) with nonmagnetic element and axis of easy magnetization perpendicular (EMP), first insulating film, first intermediate magnetic film between the first MMF and the first insulating film, second MMF on the first insulating film and including nonmagnetic elements, the second MMF having axis of EMP, second intermediate magnetic film between the first insulating film and the second MMF, and diffusion preventing film including metal nitride having barrier property against diffusion of the nonmagnetic elements between the first MMF and the first intermediate magnetic film.

摘要翻译： 根据一个实施例，公开了一种具有磁阻效应元件的存储器件。 该元件包括具有非磁性元素的第一金属磁性膜（MMF）和易磁化垂直轴（EMP），第一绝缘膜，第一MMF和第一绝缘膜之间的第一中间磁性膜，第一绝缘膜上的第二MMF， 非磁性元件，具有EMP轴的第二MMF，第一绝缘膜和第二MMF之间的第二中间磁性膜，以及包括具有阻挡性的金属氮化物的扩散防止膜，其具有防止非磁性元件在第一MMF与第一中间磁体之间的扩散 电影。

公开(公告)号：US08110497B2

公开(公告)日：2012-02-07

申请号：US12646598

申请日：2009-12-23

申请人： Atsuko Sakata ,  Soichi Yamashita ,  Yasuyuki Sonoda ,  Hiroshi Toyoda ,  Masahiko Hasunuma

发明人： Atsuko Sakata ,  Soichi Yamashita ,  Yasuyuki Sonoda ,  Hiroshi Toyoda ,  Masahiko Hasunuma

IPC分类号： H01L21/4763

CPC分类号： H01L21/76873 ,  H01L21/2885 ,  H01L21/76807 ,  H01L21/76835 ,  H01L21/76864 ,  H01L21/76877

摘要： An embodiment of the present invention provides a method for manufacturing a semiconductor device. This method comprises: forming a seed film at least on an inner face of a recessed portion of a substrate; forming a protection film on the seed film, the protection film being made of a material that is more easily oxidized than a material forming the seed film; heat-treating the protection film; exposing at least part of the seed film by removing at least part of the heat-treated protection film; forming a plating film on the seed film through electrolytic plating to be buried in the recessed portion, by supplying current to the seed film that is at least partially exposed; and removing the plating film except for a portion buried in the recessed portion.

摘要翻译： 本发明的实施例提供一种用于制造半导体器件的方法。 该方法包括：至少在基板的凹部的内表面上形成种子膜; 在种子膜上形成保护膜，保护膜由比形成种子膜的材料更容易氧化的材料制成; 热处理保护膜; 通过除去至少部分经热处理的保护膜来暴露至少部分种子膜; 通过电解电镀在所述种子膜上形成电镀膜，以通过向至少部分暴露的种子膜供电; 除去除了隐藏在凹部中的部分之外的电镀膜。

公开(公告)号：US20100167529A1

公开(公告)日：2010-07-01

申请号：US12646598

申请日：2009-12-23

申请人： Atsuko SAKATA ,  Soichi Yamashita ,  Yasuyuki Sonoda ,  Hiroshi Toyoda ,  Masahiko Hasunuma

发明人： Atsuko SAKATA ,  Soichi Yamashita ,  Yasuyuki Sonoda ,  Hiroshi Toyoda ,  Masahiko Hasunuma

IPC分类号： H01L21/768

CPC分类号： H01L21/76873 ,  H01L21/2885 ,  H01L21/76807 ,  H01L21/76835 ,  H01L21/76864 ,  H01L21/76877

摘要： An embodiment of the present invention provides a method for manufacturing a semiconductor device. This method comprises: forming a seed film at least on an inner face of a recessed portion of a substrate; forming a protection film on the seed film, the protection film being made of a material that is more easily oxidized than a material forming the seed film; heat-treating the protection film; exposing at least part of the seed film by removing at least part of the heat-treated protection film; forming a plating film on the seed film through electrolytic plating to be buried in the recessed portion, by supplying current to the seed film that is at least partially exposed; and removing the plating film except for a portion buried in the recessed portion.

摘要翻译： 本发明的实施例提供一种用于制造半导体器件的方法。 该方法包括：至少在基板的凹部的内表面上形成种子膜; 在种子膜上形成保护膜，保护膜由比形成种子膜的材料更容易氧化的材料制成; 热处理保护膜; 通过除去至少部分经热处理的保护膜来暴露至少部分种子膜; 通过电解电镀在所述种子膜上形成电镀膜，以通过向至少部分暴露的种子膜供电; 除去除了隐藏在凹部中的部分之外的电镀膜。

公开(公告)号：US07437750B1

公开(公告)日：2008-10-14

申请号：US09545851

申请日：2000-04-10

申请人： Yasuyuki Sonoda ,  Tatsuya Shimoji ,  Kazuo Okamura

发明人： Yasuyuki Sonoda ,  Tatsuya Shimoji ,  Kazuo Okamura

IPC分类号： H04N5/445 ,  H04N7/173

CPC分类号： H04N21/435 ,  H04N7/17327 ,  H04N21/235 ,  H04N21/2408 ,  H04N21/47815 ,  H04N21/6375 ,  H04N21/6547

摘要： An object is to perform retrial processing according to the allowable volume on communication lines made available at response information receiving equipment. A broadcast unit 140, when broadcasting video and audio, includes retrial information in that broadcast, according to the allowable volume on the communication lines between the television receivers and the response information receiving equipment 150. Television receivers effect display based on the received digital data. Response information input by users is sent to the response information receiving equipment 150. The television receivers make retrial transmissions based on the received retrial information when communications could not be established with the response information receiving equipment 150. This retrial information is responsive to the allowable volume on the communication lines between the television receivers and the response information receiving equipment 150, wherefore retrial transmissions are made according to the allowable volume on the communication lines.

摘要翻译： 目的是根据在响应信息接收设备上可用的通信线路上允许的容量进行重试处理。 广播单元140在广播视频和音频时，根据电视接收机和响应信息接收设备150之间的通信线路上允许的容量，包括该广播中的重试信息。 电视接收机根据接收到的数字数据进行显示。 用户输入的响应信息被发送到响应信息接收设备150。 当与响应信息接收设备150无法建立通信时，电视接收机基于所接收的重试信息进行重试传输。 该重试信息响应于电视接收机与响应信息接收设备150之间的通信线路上的允许音量，因此根据通信线路上允许的音量进行重试传输。

公开(公告)号：US06557171B1

公开(公告)日：2003-04-29

申请号：US09241339

申请日：1999-02-01

申请人： Yasuyuki Sonoda ,  Tatsuya Shimoji ,  Masahiro Oashi ,  Kazuo Okamura ,  Yoshihiro Mimura ,  Naoya Takao

发明人： Yasuyuki Sonoda ,  Tatsuya Shimoji ,  Masahiro Oashi ,  Kazuo Okamura ,  Yoshihiro Mimura ,  Naoya Takao

IPC分类号： H04H716

CPC分类号： H04N5/4401 ,  H04H20/93 ,  H04H60/27 ,  H04N21/235 ,  H04N21/23614 ,  H04N21/2362 ,  H04N21/4312 ,  H04N21/4345 ,  H04N21/4348 ,  H04N21/435 ,  H04N21/482

摘要： A digital broadcast sending/receiving system includes a digital broadcast sending apparatus and a digital broadcast receiving apparatus. The digital broadcast sending apparatus multiplexes the audio data and video data of a broadcast program into the transport stream together with preselection control information which controls preselection information image facilitating program preselection, and sends the transport stream to the digital broadcast receiving apparatus. On receiving the transport stream, the digital broadcast receiving apparatus extracts the preselection control information, and reproduces a preselection screen on a display in which the preselection information image is superimposed on the video image of the broadcast program. The digital broadcast receiving apparatus receives from the viewer specification of a program to be preselected. The digital broadcast receiving apparatus stores information on the preselected program, and reproduces the preselected program in accordance with the stored information.

摘要翻译： 数字广播发送/接收系统包括数字广播发送装置和数字广播接收装置。 数字广播发送装置将广播节目的音频数据和视频数据与控制预选信息图像的预选控制信息一起复用到传输流中，并且将传输流发送到数字广播接收装置。 在接收传输流时，数字广播接收装置提取预选控制信息，并且在预选信息图像叠加在广播节目的视频图像上的显示器上再现预选屏幕。 数字广播接收装置从观众接收要预选的节目。 数字广播接收装置存储关于预选程序的信息，并且根据所存储的信息再现预选程序。