公开(公告)号：US20090079036A1

公开(公告)日：2009-03-26

申请号：US12326108

申请日：2008-12-02

申请人： Akinori Koukitu ,  Yoshinao Kumagai ,  Yoshiki Miura ,  Kikurou Takemoto ,  Fumitaka Sato

发明人： Akinori Koukitu ,  Yoshinao Kumagai ,  Yoshiki Miura ,  Kikurou Takemoto ,  Fumitaka Sato

IPC分类号： H01L29/20

CPC分类号： C30B25/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02581 ,  H01L21/0262

摘要： A method of forming an iron-doped gallium nitride for a semi-insulating GaN substrate is provided. A substrate (1), such as a (0001)-cut sapphire substrate, is placed on a susceptor of a metalorganic hydrogen chloride vapor phase apparatus (11). Next, gaseous iron compound GFe from a source (13) for an iron compound, such as ferrocene, and hydrogen chloride gas G1HCl from a hydrogen chloride source (15) are caused to react with each other in a mixing container (16) to generate gas GFeComp of an iron-containing reaction product, such as iron chloride (FeCl2). In association with the generation, the iron-containing reaction product GFeComp, first substance gas GN containing elemental nitrogen from a nitrogen source (17), and second substance gas GGa containing elemental gallium are supplied to a reaction tube (21) to form iron-doped gallium nitride (23) on the substrate (1).

摘要翻译： 提供了一种形成用于半绝缘GaN衬底的掺杂铁的氮化镓的方法。 将诸如（0001）切割蓝宝石衬底的衬底（1）放置在金属有机氯化物气相装置（11）的基座上。 接下来，使来自氯化氢源（15）的铁化合物源（13）和来自氯化氢源（15）的氯化氢气体G1HCl的气态铁化合物GFe在混合容器（16）中彼此反应，生成 气体GFeComp的含铁反应产物，如氯化铁（FeCl2）。 与该产生相关，含铁反应产物GFeComp，含有氮源（17）的元素氮的第一物质气体GN和含有元素镓的第二物质气体GGa供给反应管（21），形成铁 - 在衬底（1）上的掺杂氮化镓（23）。

公开(公告)号：US07518216B2

公开(公告)日：2009-04-14

申请号：US11276966

申请日：2006-03-20

申请人： Akinori Koukitu ,  Yoshinao Kumagai ,  Yoshiki Miura ,  Kikurou Takemoto ,  Fumitaka Sato

发明人： Akinori Koukitu ,  Yoshinao Kumagai ,  Yoshiki Miura ,  Kikurou Takemoto ,  Fumitaka Sato

IPC分类号： H01L29/20

CPC分类号： C30B25/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02581 ,  H01L21/0262

摘要： A method of forming an iron-doped gallium nitride for a semi-insulating GaN substrate is provided. A substrate 1, such as a sapphire substrate having the (0001) plane, is placed on a susceptor of a metalorganic hydrogen chloride vapor phase apparatus 11. Next, gaseous iron compound GFe from a source 13 for an iron compound, such as ferrocene, and hydrogen chloride gas G1HCl from a hydrogen chloride source 15 are caused to react with each other in a mixing container 16 to generate gas GFeComp of an iron-containing reaction product, such as iron chloride (FeCl2). In association with the generation, the iron-containing reaction product GFeComp, first substance gas GN containing elemental nitrogen from a nitrogen source 17, and second substance gas GGa containing elemental gallium are supplied to a reaction tube 21 to form iron-doped gallium nitride 23 on the substrate 1.

摘要翻译： 提供了一种形成用于半绝缘GaN衬底的掺杂铁的氮化镓的方法。 将具有（0001）面的蓝宝石衬底的衬底1放置在金属有机氯化物气相装置11的基座上。接下来，来自用于铁化合物如二茂铁的源13的气态铁化合物GFe， 并使来自氯化氢源15的氯化氢气体G1HCl在混合容器16中相互反应，生成含铁反应产物如氯化铁（FeCl 2）的气体GFeComp。 与该产生相关，含铁反应产物GFeComp，含有氮源17的元素氮的第一物质气体GN和含有元素镓的第二物质气体GGa被供给到反应管21中，以形成掺杂铁的氮化镓23 在基板1上。

公开(公告)号：US07843040B2

公开(公告)日：2010-11-30

申请号：US12326108

申请日：2008-12-02

申请人： Akinori Koukitu ,  Yoshinao Kumagai ,  Yoshiki Miura ,  Kikurou Takemoto ,  Fumitaka Sato

发明人： Akinori Koukitu ,  Yoshinao Kumagai ,  Yoshiki Miura ,  Kikurou Takemoto ,  Fumitaka Sato

IPC分类号： H01L29/20

CPC分类号： C30B25/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02581 ,  H01L21/0262

摘要： A method of forming an iron-doped gallium nitride for a semi-insulating GaN substrate is provided. A substrate (1), such as a (0001)-cut sapphire substrate, is placed on a susceptor of a metalorganic hydrogen chloride vapor phase apparatus (11). Next, gaseous iron compound GFe from a source (13) for an iron compound, such as ferrocene, and hydrogen chloride gas G1HCl from a hydrogen chloride source (15) are caused to react with each other in a mixing container (16) to generate gas GFeComp of an iron-containing reaction product, such as iron chloride (FeCl2). In association with the generation, the iron-containing reaction product GFeComp, first substance gas GN containing elemental nitrogen from a nitrogen source (17), and second substance gas GGa containing elemental gallium are supplied to a reaction tube (21) to form iron-doped gallium nitride (23) on the substrate (1).

摘要翻译： 提供了一种形成用于半绝缘GaN衬底的掺杂铁的氮化镓的方法。 将诸如（0001）切割蓝宝石衬底的衬底（1）放置在金属有机氯化物气相装置（11）的基座上。 接下来，使来自氯化氢源（15）的铁化合物源（13）和来自氯化氢源（15）的氯化氢气体G1HCl的气态铁化合物GFe在混合容器（16）中彼此反应，生成 气体GFeComp的含铁反应产物，如氯化铁（FeCl2）。 与该产生相关，含铁反应产物GFeComp，含有氮源（17）的元素氮的第一物质气体GN和含有元素镓的第二物质气体GGa被供给到反应管（21）中， 在衬底（1）上的掺杂氮化镓（23）。

公开(公告)号：US20070215982A1

公开(公告)日：2007-09-20

申请号：US11276966

申请日：2006-03-20

申请人： Akinori Koukitu ,  Yoshinao Kumagai ,  Yoshiki Miura ,  Kikurou Takemoto ,  Fumitaka Sato

发明人： Akinori Koukitu ,  Yoshinao Kumagai ,  Yoshiki Miura ,  Kikurou Takemoto ,  Fumitaka Sato

IPC分类号： H01L29/20 ,  H01L21/205

CPC分类号： C30B25/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02581 ,  H01L21/0262

摘要： A method of forming an iron-doped gallium nitride for a semi-insulating GaN substrate is provided. A substrate 1, such as a sapphire substrate having the (0001) plane, is placed on a susceptor of a metalorganic hydrogen chloride vapor phase apparatus 11. Next, gaseous iron compound GFe from a source 13 for an iron compound, such as ferrocene, and hydrogen chloride gas G1HCl from a hydrogen chloride source 15 are caused to react with each other in a mixing container 16 to generate gas GFeComp of an iron-containing reaction product, such as iron chloride (FeCl2). In association with the generation, the iron-containing reaction product GFeComp, first substance gas GN containing elemental nitrogen from a nitrogen source 17, and second substance gas GGa containing elemental gallium are supplied to a reaction tube 21 to form iron-doped gallium nitride 23 on the substrate 1.

摘要翻译： 提供了一种形成用于半绝缘GaN衬底的掺杂铁的氮化镓的方法。 将具有（0001）面的蓝宝石衬底等基板1放置在金属有机氯化物气相装置11的基座上。 接下来，使来自氯化氢源15的铁化合物诸如二茂铁和氯化氢气体的来源13的气态铁化合物G 1 Fe < 彼此混合在混合容器16中以产生含铁反应产物如氯化铁（FeCl 2）的气体G FeCl 2。 与该产生相关联，来自氮源17的含铁反应产物G FeCO 2，含有元素氮的第一物质气体G N N和第二物质气体G

公开(公告)号：US20080308814A1

公开(公告)日：2008-12-18

申请号：US12136275

申请日：2008-06-10

申请人： Seiji NAKAHATA ,  Fumitaka Sato ,  Yoshiki Miura ,  Akinori Koukitu ,  Yoshinao Kumagai

发明人： Seiji NAKAHATA ,  Fumitaka Sato ,  Yoshiki Miura ,  Akinori Koukitu ,  Yoshinao Kumagai

IPC分类号： H01L29/205 ,  H01L21/205

CPC分类号： C30B25/00 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02581 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/207

摘要： There is disclosed a method for forming a gallium nitride layer of which resistivity is 1×106Ω·cm or more, including steps of: forming a gallium nitride layer containing iron on a substrate; and heating said gallium nitride layer formed on said substrate.

摘要翻译： 公开了形成电阻率为1×10 6Ω·cm以上的氮化镓层的方法，包括以下步骤：在基板上形成含有铁的氮化镓层; 以及加热形成在所述衬底上的所述氮化镓层。

公开(公告)号：US07915149B2

公开(公告)日：2011-03-29

申请号：US12136275

申请日：2008-06-10

申请人： Seiji Nakahata ,  Fumitaka Sato ,  Yoshiki Miura ,  Akinori Koukitu ,  Yoshinao Kumagai

发明人： Seiji Nakahata ,  Fumitaka Sato ,  Yoshiki Miura ,  Akinori Koukitu ,  Yoshinao Kumagai

IPC分类号： H01L21/00

CPC分类号： C30B25/00 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02581 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/207

摘要： There is disclosed a method for forming a gallium nitride layer of which resistivity is 1×106 Ω·cm or more, including steps of: forming a gallium nitride layer containing iron on a substrate; and heating said gallium nitride layer formed on said substrate.

摘要翻译： 公开了形成电阻率为1×10 6Ω·cm·cm以上的氮化镓层的方法，包括以下步骤：在基板上形成含有铁的氮化镓层; 以及加热形成在所述衬底上的所述氮化镓层。

公开(公告)号：US5843590A

公开(公告)日：1998-12-01

申请号：US574628

申请日：1995-12-19

申请人： Yoshiki Miura ,  Keiichiro Fujita ,  Kikurou Takemoto ,  Masato Matsushima ,  Hideki Matsubara ,  Shigenori Takagishi ,  Hisashi Seki ,  Akinori Koukitu

发明人： Yoshiki Miura ,  Keiichiro Fujita ,  Kikurou Takemoto ,  Masato Matsushima ,  Hideki Matsubara ,  Shigenori Takagishi ,  Hisashi Seki ,  Akinori Koukitu

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01L33/02 ,  B32B18/00

CPC分类号： H01L33/025 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0075

摘要： A high performance epitaxial wafer which is useful, for example in a light emitting device is produced with a buffer layer. The epitaxial wafer has a substrate of a compound semiconductor selected from a group consisting of GaAs, GaP, InAs and InP. The buffer layer of GaN is grown on the substrate to a thickness within the range of 10 nm to 80 nm. An epitaxial layer of GaN is formed on the buffer layer. The buffer layer is grown at a first temperature by organic metal chloride vapor phase epitaxy, while the epitaxial layer is grown at a second temperature, which is higher than the first temperature, by the organic metal chloride vapor phase epitaxy.

摘要翻译： 例如在发光器件中有用的高性能外延晶片由缓冲层制成。 外延晶片具有选自GaAs，GaP，InAs和InP的化合物半导体的衬底。 在衬底上生长GaN的缓冲层至10nm至80nm范围内的厚度。 在缓冲层上形成GaN的外延层。 缓冲层通过有机金属氯化物气相外延在第一温度下生长，而外延层通过有机金属氯化物气相外延在比第一温度高的第二温度下生长。

公开(公告)号：US5864573A

公开(公告)日：1999-01-26

申请号：US636563

申请日：1996-04-23

申请人： Yoshiki Miura ,  Hideki Matsubara ,  Hisashi Seki ,  Akinori Koukitu

发明人： Yoshiki Miura ,  Hideki Matsubara ,  Hisashi Seki ,  Akinori Koukitu

IPC分类号： H01L21/205 ,  H01L33/12 ,  H01L33/32 ,  H01S5/02 ,  H01S5/323 ,  H01S3/19 ,  H01L21/20

CPC分类号： H01L21/02392 ,  H01L21/02395 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： A compound semiconductor light emitting device having a long life and high performance and a method for industrially fabricating the same are provided. The compound semiconductor light emitting device includes a GaP substrate, a buffer layer consisting of InN which is formed on the substrate, a relaxation layer consisting of In.sub.x Ga.sub.1-x N which is formed on the buffer layer, and a luminescent layer consisting of In.sub.k Ga.sub.1-k N which is formed on the relaxation layer. In this description, k represents a constant value within the range of 0

摘要翻译： 提供了具有长寿命和高性能的化合物半导体发光器件及其工业制造方法。 化合物半导体发光器件包括GaP衬底，由衬底上形成的InN构成的缓冲层，形成在缓冲层上的由In x Ga 1-x N构成的弛豫层和由InkGa1-kN组成的发光层， 形成在松弛层上。 在本说明书中，k表示在0

公开(公告)号：US5970314A

公开(公告)日：1999-10-19

申请号：US823237

申请日：1997-03-24

申请人： Takuji Okahisa ,  Mitsuru Shimazu ,  Masato Matsushima ,  Yoshiki Miura ,  Kensaku Motoki ,  Hisashi Seki ,  Akinori Koukitu

发明人： Takuji Okahisa ,  Mitsuru Shimazu ,  Masato Matsushima ,  Yoshiki Miura ,  Kensaku Motoki ,  Hisashi Seki ,  Akinori Koukitu

IPC分类号： C30B25/02 ,  C30B29/38 ,  H01L21/205 ,  H01L33/12 ,  H01L33/32 ,  H01L33/34 ,  H01S5/00 ,  H01S5/323 ,  H01L21/00 ,  C30B25/14 ,  H01L21/20 ,  H01L21/36

CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L33/0075

摘要： A process for forming a high quality epitaxial compound semiconductor layer of indium gallium nitride In.sub.x Ga.sub.1-x N, (where 0

摘要翻译： 在衬底上形成氮化铟镓In x Ga 1-x N（其中0

公开(公告)号：US5756374A

公开(公告)日：1998-05-26

申请号：US856911

申请日：1997-05-15

申请人： Yoshiki Miura ,  Hideki Matsubara ,  Masato Matsushima ,  Hisashi Seki ,  Akinori Koukitu

发明人： Yoshiki Miura ,  Hideki Matsubara ,  Masato Matsushima ,  Hisashi Seki ,  Akinori Koukitu

IPC分类号： H01L33/00 ,  H01L33/32 ,  H01L21/00 ,  C30B23/00 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L33/32 ,  H01L33/0075 ,  Y10S438/925

摘要： A compound semiconductor light emitting device of high performance and a method which can industrially prepare the same are provided. The compound semiconductor light emitting device includes a GaAs substrate, a buffer layer consisting of GaN, having a thickness of 10 nm to 80 nm, which is formed on the substrate, an epitaxial layer consisting of Al.sub.x Ga.sub.1-x N(0.ltoreq.x

摘要翻译： 提供了一种高性能的化合物半导体发光器件及其工业上的制备方法。 化合物半导体发光器件包括GaAs衬底，由GaN构成的缓冲层，其厚度为10nm至80nm，其形成在衬底上，外延层由Al x Ga 1-x N（0