利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

9 条记录 (耗时 0.021 秒)

    Dry etching method
    1.
    发明授权
    Dry etching method 失效
    干蚀刻法

    公开(公告)号：US06383403B1

    公开(公告)日：2002-05-07

    申请号：US09297070

    申请日：1999-04-30

    申请人： Akira Sekiya ,  Toshiro Yamada ,  Kuniaki Goto ,  Tetsuya Takagaki

    发明人： Akira Sekiya ,  Toshiro Yamada ,  Kuniaki Goto ,  Tetsuya Takagaki

    IPC分类号： C03C2300

    CPC分类号： H01L21/30604 ,  H01L21/31116

    摘要： A substrate to be etched is subjected to dry etching by using a dry etching gas containing a perfluorocycloolefin while a plasma with a high density region of at least 1010/cm3 is generated. As the perfluorocycloolefin, those having 3 to 8 carbon atoms, especially 4 to 6 carbon atoms are preferably used.

    摘要翻译： 通过使用含有全氟环烯烃的干式蚀刻气体进行干蚀刻，同时产生具有至少1010 / cm3的高密度区域的等离子体。 作为全氟环烷烃，优选使用碳原子数3〜8，特别是4〜6的碳原子。

    Method and apparatus for processing substrates
    6.
    发明申请
    Method and apparatus for processing substrates 审中-公开
    用于处理衬底的方法和装置

    公开(公告)号：US20070062646A1

    公开(公告)日：2007-03-22

    申请号：US11601697

    申请日：2006-11-20

    申请人： Unryu Ogawa ,  Tetsuya Takagaki ,  Akinori Ishii ,  Tatsushi Ueda ,  Takayuki Sato

    发明人： Unryu Ogawa ,  Tetsuya Takagaki ,  Akinori Ishii ,  Tatsushi Ueda ,  Takayuki Sato

    IPC分类号： H01L21/306

    CPC分类号： H01J37/3244 ,  H01J2237/335 ,  H01L21/31116 ,  H01L21/67069

    摘要： A substrate processing apparatus includes a processing chamber and a gas supply line, wherein a natural oxide film removing gas including a first gas activated by a second gas activated by a plasma discharge is supplied to the processing chamber through the gas supply line to remove a natural oxide film on a wafer, and wherein the first gas and the second gas are supplied to the gas supply line along a first direction and a second direction and an angle between the first and the second direction ranges from about 90° to 180°.

    摘要翻译： 基板处理装置包括处理室和气体供给管线，其中包括由等离子体放电激活的第二气体激活的第一气体的天然氧化物膜去除气体通过气体供给管线供给到处理室，以去除天然气 氧化膜，并且其中所述第一气体和所述第二气体沿着第一方向和第二方向被供应到所述气体供应管线，并且所述第一和第二方向之间的角度范围为约90°至180°。

    Thermal treatment apparatus
    7.
    发明授权
    Thermal treatment apparatus 失效
    热处理设备

    公开(公告)号：US4468195A

    公开(公告)日：1984-08-28

    申请号：US418252

    申请日：1982-09-15

    申请人： Tamotsu Sasaki ,  Tetsuya Takagaki ,  Kenichi Ikeda

    发明人： Tamotsu Sasaki ,  Tetsuya Takagaki ,  Kenichi Ikeda

    IPC分类号： F27D3/04 ,  B01J4/00 ,  F27B5/02 ,  F27D3/12 ,  H01L21/22 ,  F27B1/26 ,  B65G25/00 ,  F27D3/00

    CPC分类号： F27D3/12 ,  B01J4/001 ,  F27B5/02

    摘要： The semiconductor device manufacturing process for producing semiconductors (transistor, IC, LSI or the like) needs a large number of thermal treatments for semiconductor wafers, such as thermal oxidation, diffusion, CVD, annealing or the like. The above-mentioned various thermal treatments are conducted by employing thermal treatment apparatus. The thermal treatment apparatus according to the present invention performs thermal treatments for semiconductor wafers, such as thermal oxidation, diffusion, CVD, annealing or the like, and has a soft landing loader capable of loading and unloading a wafer jig housing therein a plurality of semiconductor wafers into and from a process tube of the thermal treatment apparatus with high reliability and a high thermal efficiency as well as capable of automatic control of the movement of the semiconductor wafers in accordance with thermal treatment conditions.

    摘要翻译： 用于制造半导体（晶体管，IC，LSI等）的半导体器件制造方法需要对半导体晶片进行大量的热处理，例如热氧化，扩散，CVD，退火等。 上述各种热处理通过使用热处理装置进行。 根据本发明的热处理装置对半导体晶片进行热处理，例如热氧化，扩散，CVD，退火等，并且具有能够装载和卸载其中的多个半导体的晶片夹具的软着陆装载机 晶片进入和离开热处理设备的处理管，具有高可靠性和高热效率，并且能够根据热处理条件自动控制半导体晶片的移动。

    Surface treatment device
    8.
    发明授权
    Surface treatment device 失效
    表面处理装置

    公开(公告)号：US4282825A

    公开(公告)日：1981-08-11

    申请号：US61049

    申请日：1979-07-26

    申请人： Hiroto Nagatomo ,  Tetsuya Takagaki ,  Hisao Seki ,  Shirou Terasaki ,  Hitoshi Horimuki

    发明人： Hiroto Nagatomo ,  Tetsuya Takagaki ,  Hisao Seki ,  Shirou Terasaki ,  Hitoshi Horimuki

    IPC分类号： G03F7/30 ,  B05C3/04 ,  B05C3/10

    CPC分类号： G03F7/3021 ,  Y10S134/902

    摘要： A surface treatment device capable of carrying out the surface treatment such as washing or etching of plate-like articles such as semiconductor wafers maintaining high degree of reliability, wherein a surface treating liquid is introduced into a ring-like or a conduit-like treating vessel. The plate-like articles to be treated are moved by a conveyor on a conveyor path having a surface in parallel with the surfaces of the plate-like articles against the stream of the treating liquid in a piece-by-piece manner, so that the surfaces of the plate-like articles are treated, whereby the surfaces of the semiconductor wafers can be desirably treated prior to manufacturing the semiconductor products.

    摘要翻译： 一种表面处理装置，其能够进行表面处理，例如洗涤或蚀刻保持高可靠性的诸如半导体晶片的板状制品，其中表面处理液体被引入环状或管状的处理容器 。 待处理的板状物品通过输送机在输送路径上移动，该传送路径的表面与板状物体的表面平行地抵靠处理液体的流逐个方式移动，因此， 对板状制品的表面进行处理，由此可以在制造半导体产品之前理想地处理半导体晶片的表面。