公开(公告)号：US06818942B2

公开(公告)日：2004-11-16

申请号：US10330167

申请日：2002-12-30

申请人： Akira Tai ,  Shoji Mizuno

发明人： Akira Tai ,  Shoji Mizuno

IPC分类号： H01L2976

CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L27/11558

摘要： In a non-volatile semiconductor storage device, a barrier layer is disposed, via an interlayer isolating film, in an area surrounding a floating gate, including an area adjoining a connecting part of the floating gate, without covering the floating gate. The edge of the barrier layer is, in an overhead view relative to the surface of the semiconductor substrate, disposed at a space of 2 &mgr;m apart from the edge of the floating gate.

摘要翻译： 在非易失性半导体存储装置中，阻挡层通过层间绝缘膜设置在包围与浮动栅极的连接部分相邻的区域的浮动栅极周围的区域中，而不覆盖浮置栅极。 在相对于半导体衬底的表面的俯视图中，阻挡层的边缘设置在与浮动栅极的边缘分开的2μm的空间处。

公开(公告)号：US20050189617A1

公开(公告)日：2005-09-01

申请号：US11065150

申请日：2005-02-25

申请人： Shoji Mizuno ,  Akira Tai ,  Takashi Nakano

发明人： Shoji Mizuno ,  Akira Tai ,  Takashi Nakano

IPC分类号： H01L21/331 ,  H01L27/082 ,  H01L29/10 ,  H01L29/73 ,  H01L29/732 ,  H01L29/735

CPC分类号： H01L29/735 ,  H01L29/1004 ,  H01L29/1008 ,  H01L29/732

摘要： A bipolar transistor includes: a base having a first conductive type; an emitter having a second conductive type; a collector having the second conductive type; and a plurality of interceptors for intercepting a carrier path of a current in the base. The carrier path is disposed between the emitter and the collector through the base. Each interceptor is disposed on a shortest distance line of the carrier path in the base between the emitter and the collector. The carrier path is lengthened substantially without increasing the size of the transistor so that the transistor has a high withstand voltage. Further, the carrier path bypasses the interceptors so that the transport efficiency is not reduced substantially.

摘要翻译： 双极晶体管包括：具有第一导电类型的基极; 具有第二导电类型的发射极; 具有第二导电类型的集电器; 以及用于截取基座中的电流的载波路径的多个拦截器。 载体路径通过基底设置在发射极和集电极之间。 每个拦截器设置在发射器和收集器之间的基座中的载体路径的最短距离线上。 载体路径基本上延长而不增加晶体管的尺寸，使得晶体管具有高的耐受电压。 此外，载体路径绕过拦截器，使得传输效率没有显着降低。

公开(公告)号：US09640651B2

公开(公告)日：2017-05-02

申请号：US15116288

申请日：2014-10-06

申请人： Hidefumi Takaya ,  Jun Saito ,  Akitaka Soeno ,  Kimimori Hamada ,  Shoji Mizuno ,  Sachiko Aoi ,  Yukihiko Watanabe

发明人： Hidefumi Takaya ,  Jun Saito ,  Akitaka Soeno ,  Kimimori Hamada ,  Shoji Mizuno ,  Sachiko Aoi ,  Yukihiko Watanabe

IPC分类号： H01L29/94 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L21/761 ,  H01L29/16

CPC分类号： H01L29/7811 ,  H01L21/761 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0649 ,  H01L29/0661 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7813

摘要： A semiconductor device includes a termination trench surrounding a region in which a plurality of gate trenches is provided; a p-type lower end region being in contact with a lower end of the termination trench; a p-type outer circumference region being in contact with the termination trench from an outer circumferential side and exposed on a surface of the semiconductor device; a plurality of guard ring regions of a p-type provided on an outer circumferential side of the p-type outer circumference region and exposed on the surface; and an n-type outer circumference region separating the p-type outer circumference region from the guard ring regions and separating the guard ring regions from each another.

公开(公告)号：US07982508B2

公开(公告)日：2011-07-19

申请号：US12654323

申请日：2009-12-17

申请人： Takaaki Aoki ,  Shoji Mizuno

发明人： Takaaki Aoki ,  Shoji Mizuno

IPC分类号： H03K3/00

CPC分类号： H01L27/0629 ,  H01L27/0255 ,  H03K17/063 ,  H03K17/165 ,  H03K17/168 ,  H03K17/567 ,  H03K17/687 ,  H03K2217/0036

摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

摘要翻译： 开关电路包括：具有第一电极，第二电极和控制电极的晶体管; 齐纳二极管; 和电容器。 第一电极和第二电极之间的连接能够通过切换晶体管的控制电压来暂时地在状态和非导通状态之间切换。 齐纳二极管和电容器串联耦合在晶体管的第一电极和控制电极之间。 第一电极是漏极或集电极。

公开(公告)号：US20080203389A1

公开(公告)日：2008-08-28

申请号：US12071719

申请日：2008-02-26

申请人： Shoji Ozoe ,  Shoji Mizuno ,  Takaaki Aoki ,  Tomofusa Shiga

发明人： Shoji Ozoe ,  Shoji Mizuno ,  Takaaki Aoki ,  Tomofusa Shiga

IPC分类号： H01L29/861 ,  H01L21/329

CPC分类号： H01L29/945 ,  G01K7/015 ,  H01L28/40 ,  H01L29/92

摘要： A semiconductor apparatus is provided. The semiconductor apparatus includes a semiconductor substrate and a temperature sensing diode that is disposed on a surface part of the semiconductor substrate. A relation between a forward current flowing through the temperature sensing diode and a corresponding voltage drop across the temperature sensing diode varies with temperature. The semiconductor apparatus further includes a capacitor that is coupled with the temperature sensing diode, configured to reduce noise to act on the temperature sensing diode, and disposed such that the capacitor and the temperature sensing diode have a layered structure in a thickness direction of the semiconductor substrate.

摘要翻译： 提供一种半导体装置。 半导体装置包括设置在半导体衬底的表面部分上的半导体衬底和温度感测二极管。 流过温度感测二极管的正向电流和温度感测二极管两端的相应电压降之间的关系随着温度而变化。 半导体装置还包括与温度感测二极管耦合的电容器，其被配置为降低作用在温度感测二极管上的噪声，并且被布置为使得电容器和温度感测二极管在半导体的厚度方向上具有层状结构 基质。

公开(公告)号：US06524890B2

公开(公告)日：2003-02-25

申请号：US09987798

申请日：2001-11-16

申请人： Nobumasa Ueda ,  Shoji Mizuno

发明人： Nobumasa Ueda ,  Shoji Mizuno

IPC分类号： H01L2144

CPC分类号： H01L21/76264 ,  H01L21/30625 ,  H01L21/76283

摘要： When a semiconductor device having an element isolation structure is formed, first, a trench is formed in a wafer from a principal surface of the wafer, and the trench is filled with an insulating film. Then, the back surface of the wafer is polished so that the insulating film is exposed on the back surface. Accordingly, the insulating film penetrates the wafer from the principal surface to the back surface, thereby performing element isolation of the wafer. It is not necessary to use a bonding wafer. Thus, the method for manufacturing the semiconductor device is simplified.

公开(公告)号：US07838909B2

公开(公告)日：2010-11-23

申请号：US11528612

申请日：2006-09-28

申请人： Hiroaki Himi ,  Takashi Nakano ,  Shoji Mizuno

发明人： Hiroaki Himi ,  Takashi Nakano ,  Shoji Mizuno

IPC分类号： H01L27/10 ,  H01L27/12 ,  H01L31/0392

CPC分类号： H01L29/7816 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/7317 ,  H01L29/7824

摘要： A semiconductor device includes a common diffusion structure formed in each region of a substrate in which semiconductor components are formed. The diffusion structures are separated into sections by trenches to form semiconductor components. The trenches define sizes of the semiconductor components and isolate the semiconductor components from the surrounding area.

摘要翻译： 半导体器件包括形成在其中形成半导体部件的衬底的每个区域中的公共扩散结构。 扩散结构通过沟槽分成部分以形成半导体部件。 沟槽限定半导体部件的尺寸并将半导体部件与周围区域隔离。

公开(公告)号：US07671636B2

公开(公告)日：2010-03-02

申请号：US11723967

申请日：2007-03-22

申请人： Takaaki Aoki ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

发明人： Takaaki Aoki ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

IPC分类号： H03K3/00

CPC分类号： H01L27/0629 ,  H01L27/0255 ,  H03K17/063 ,  H03K17/165 ,  H03K17/168 ,  H03K17/567 ,  H03K17/687 ,  H03K2217/0036

摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

公开(公告)号：US20080012610A1

公开(公告)日：2008-01-17

申请号：US11723967

申请日：2007-03-22

申请人： Takaaki Aoki ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

发明人： Takaaki Aoki ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

IPC分类号： H03K3/00 ,  H03K17/00

CPC分类号： H01L27/0629 ,  H01L27/0255 ,  H03K17/063 ,  H03K17/165 ,  H03K17/168 ,  H03K17/567 ,  H03K17/687 ,  H03K2217/0036

摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

摘要翻译： 开关电路包括：具有第一电极，第二电极和控制电极的晶体管; 齐纳二极管; 和电容器。 第一电极和第二电极之间的连接能够通过切换晶体管的控制电压来暂时地在状态和非导通状态之间切换。 齐纳二极管和电容器串联耦合在晶体管的第一电极和控制电极之间。 第一电极是漏极或集电极。

公开(公告)号：US06831331B2

公开(公告)日：2004-12-14

申请号：US09945621

申请日：2001-09-05

申请人： Yasuhiro Kitamura ,  Toshio Sakakibara ,  Kenji Kohno ,  Shoji Mizuno ,  Yoshiaki Nakayama ,  Hiroshi Maeda ,  Makio Iida ,  Hiroshi Fujimoto ,  Mitsuhiro Saitou ,  Hiroshi Imai ,  Hiroyuki Ban

发明人： Yasuhiro Kitamura ,  Toshio Sakakibara ,  Kenji Kohno ,  Shoji Mizuno ,  Yoshiaki Nakayama ,  Hiroshi Maeda ,  Makio Iida ,  Hiroshi Fujimoto ,  Mitsuhiro Saitou ,  Hiroshi Imai ,  Hiroyuki Ban

IPC分类号： H01L2976

CPC分类号： H01L29/7816 ,  H01L21/8249 ,  H01L27/0251 ,  H01L27/0623 ,  H01L27/085 ,  H01L29/1087 ,  H01L29/66674 ,  H01L29/7395 ,  H01L29/7801 ,  H01L29/7824 ,  H01L29/7835

摘要： A semiconductor device is provided having a power transistor structure. The power transistor structure includes a plurality of first wells disposed independently at a surface portion of a semiconductor layer; a deep region having a portion disposed in the semiconductor layer between the first wells; a drain electrode connected to respective drain regions in the first wells; a source electrode connected to respective source regions and channel well regions in the first wells, such that either the drain electrode or the source electrode is connected to an inductive load; and a connecting member for supplying the deep region with a source potential, where the connecting member is configurable to connect to the drain electrode when the drain electrode is connected to the inductive load and to connect to the source electrode when the source electrode is connected to said inductive load.

摘要翻译： 提供具有功率晶体管结构的半导体器件。 功率晶体管结构包括独立地设置在半导体层的表面部分处的多个第一阱; 深部区域，其具有设置在所述第一阱之间的所述半导体层中的部分; 漏电极，连接到所述第一阱中的相应的漏极区; 源电极，其连接到第一阱中的各个源极区域和沟道阱区域，使得漏极电极或源极电极连接到感性负载; 以及连接构件，用于向深区域提供源极电位，其中当漏电极连接到感性负载时，连接构件可配置为连接到漏电极，并且当源电极连接到源电极时连接到源电极 表示感性负载。