摘要:
Techniques for designing a switchable amplifier are described. In one aspect, a switchable amplifier including a core amplifier circuit configured to selectively enable one or more parallel input transistor pairs is described. The core amplifier circuit comprises a permanently enabled input transistor pair. In another aspect, a device operable between a first mode of operation and a second mode of operation comprising a receiver logic circuit for selectably enabling and disabling a plurality of input transistor pairs within a switchable amplifier is described where the switchable amplifier also includes a core amplifier circuit coupled to the receiver logic circuit for selectably enabling and disabling a transistor pair therein. The described switchable amplifiers result in the ability to provide varying amplifier performance characteristics based upon the current mode of operation of the device.
摘要:
Techniques for designing a switchable amplifier are described. In one aspect, a switchable amplifier including a core amplifier circuit configured to selectively enable one or more parallel input transistor pairs is described. The core amplifier circuit comprises a permanently enabled input transistor pair. In another aspect, a device operable between a first mode of operation and a second mode of operation comprising a receiver logic circuit for selectably enabling and disabling a plurality of input transistor pairs within a switchable amplifier is described where the switchable amplifier also includes a core amplifier circuit coupled to the receiver logic circuit for selectably enabling and disabling a transistor pair therein. The described switchable amplifiers result in the ability to provide varying amplifier performance characteristics based upon the current mode of operation of the device.
摘要:
A device with multiple multi-mode low-noise amplifiers (LNAs), each with common operating modes and separate operating frequency bands, are coupled to shared degenerative inductors for common operating modes. Common load inductors are coupled to the multi-mode LNA outputs to reduce the number of load inductors required. The multi-mode LNAs have parallel transistor gain stages and form part of an integrated circuit (IC) for use in a wireless communication receiver. Each multi-mode LNA has the capability to switch between at least one higher linearity transistor gain stage and at least one lower linearity transistor gain stage for different operating modes. Multiple lower linearity transistor gain stages for different multi-mode LNAs may be merged into a single lower linearity transistor gain stage shared among multiple multi-mode LNAs through multiple RF switches between a set of common RF inputs and common inputs and common input matching networks.
摘要:
A device with multiple multi-mode low-noise amplifiers (LNAs), each with common operating modes and separate operating frequency bands, are coupled to shared degenerative inductors for common operating modes. Common load inductors are coupled to the multi-mode LNA outputs to reduce the number of load inductors required. The multi-mode LNAs have parallel transistor gain stages and form part of an integrated circuit (IC) for use in a wireless communication receiver. Each multi-mode LNA has the capability to switch between at least one higher linearity transistor gain stage and at least one lower linearity transistor gain stage for different operating modes. Multiple lower linearity transistor gain stages for different multi-mode LNAs may be merged into a single lower linearity transistor gain stage shared among multiple multi-mode LNAs through multiple RF switches between a set of common RF inputs and common inputs and common input matching networks.
摘要:
Switchable voltage level supplies for circuitry in a multi-mode communications chipset are disclosed. In an embodiment, a first voltage level is supplied to TX circuitry operating in a first mode having a first set of linearity and/or noise requirements. A second voltage level lower than the first voltage level is supplied to TX circuitry operating in a second mode having a second set of linearity and/or noise requirements looser than the first set of requirements. The first mode may be operation according to the GSM standard, and the second mode may be operation according to the W-CDMA standard.
摘要:
A cascode amplifier with protection circuitry is described. In one exemplary design, the amplifier includes multiple branches coupled in parallel, with at least one branch being switchable between “on” and “off” states. Each switchable branch includes a gain transistor coupled to a cascode transistor. The gain transistor amplifies an input signal and provides an amplified signal in the on state and does not amplify the input signal in the off state. The cascode transistor buffers the amplified signal and provides an output signal in the on state. The output signal swing may be split between the gain transistor and the cascode transistor in both the on and off states with the protection circuitry. Each transistor may then observe a fraction of the voltage swing. The voltage splitting in the off state may be achieved by floating the gain transistor and shorting the gate and source of the cascode transistor.
摘要:
Switches with variable control voltages and having improved reliability and performance are described. In an exemplary design, an apparatus includes a switch, a peak voltage detector, and a control voltage generator. The switch may be implemented with stacked transistors. The peak voltage detector detects a peak voltage of an input signal provided to the switch. In an exemplary design, the control voltage generator generates a variable control voltage to turn off the switch based on the detected peak voltage. In another exemplary design, the control voltage generator generates a variable control voltage to turn on the switch based on the detected peak voltage. In yet another exemplary design, the control voltage generator generates a control voltage to turn on the switch and attenuate the input signal when the peak voltage exceeds a high threshold.
摘要:
High voltage logic circuits that can handle digital input and output signals having a larger voltage range are described. In an exemplary design, a high voltage logic circuit includes an input stage, a second stage, and an output stage. The input stage receives at least one input signal and provides (i) at least one first intermediate signal having a first voltage range and (ii) at least one second intermediate signal having a second voltage range. The second stage receives and processes the first and second intermediate signals based on a logic function and provides (i) a first drive signal having the first voltage range and (ii) a second drive signal having the second voltage range. The output stage receives the first and second drive signals and provides an output signal having a third voltage range, which may be larger than each of the first and second voltage ranges.
摘要:
Exemplary embodiments of the disclosure are directed to down-converting an RF signal of a transmitter to baseband, filtering the down-converted signal, and generating a composite signal based on the filtered down-converted signal and a transmission based-band signal.
摘要:
Switches with connected bulk for improved switching performance and bias resistors for even voltage distribution to improve reliability are described. In an exemplary design, a switch may include a plurality of transistors coupled in a stack and at least one resistor coupled to at least one intermediate node in the stack. The transistors may have (i) a first voltage applied to a first transistor in the stack and (ii) a second voltage that is lower than the first voltage applied to bulk nodes of the transistors. The resistor(s) may maintain matching bias conditions for the transistors when they are turned off. In one exemplary design, one resistor may be coupled between the source and drain of each transistor. In another exemplary design, one resistor may be coupled between each intermediate node and the first voltage. The resistor(s) may maintain the source of each transistor at the first voltage.