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    THz semiconductor laser incorporating a controlled plasmon confinement waveguide
    1.
    发明授权
    THz semiconductor laser incorporating a controlled plasmon confinement waveguide 有权
    掺入受控等离子体限制波导的太赫兹半导体激光器

    公开(公告)号：US07382806B2

    公开(公告)日：2008-06-03

    申请号：US10508996

    申请日：2003-03-24

    申请人： Alessandro Tredicucci ,  Fabio Beltram ,  Harvey Edward Beere ,  Alexander Giles Davies ,  Ruedeger Koehler ,  Edmund Harold Linfield

    发明人： Alessandro Tredicucci ,  Fabio Beltram ,  Harvey Edward Beere ,  Alexander Giles Davies ,  Ruedeger Koehler ,  Edmund Harold Linfield

    IPC分类号： H01S3/30

    CPC分类号： B82Y20/00 ,  H01S5/1046 ,  H01S5/2054 ,  H01S5/22 ,  H01S5/3213 ,  H01S5/3402

    摘要： A semiconductor laser comprises an active region (12) which, in response to a pumping energy applied thereto, can produce a stimulated emission of radiation with a central wavelength (λ) in the far infrared region, and a confinement region (16, 18, 22) suitable for confining the radiation in the active region (12), and comprising at least one interface (16a, 16b, 22a) between adjacent layers that is capable of supporting surface plasmon modes generated by an interaction of the interface with the radiation. The confinement region (16, 18, 22) comprises a wave-guide layer (16) which is delimited on opposite sides by a first interface and by a second interface (16a, 16b). The guide layer (16) is doped in a manner such that the first and second interfaces (16a, 16b) are capable of supporting the plasmon modes, respectively, and is of a thickness (d) such as to bring about the accumulation of the plasmon modes in proximity to the first and second interfaces (16a, 16b), outside the layer (16), and substantially a suppression of the plasmon modes, inside the layer.

    摘要翻译： 半导体激光器包括有源区域（12），其响应于施加到其上的泵送能量，可产生受激发射的远红外区域中具有中心波长（λ）的辐射，以及约束区域（16,18， 22），其适于将辐射限制在有源区域（12）中，并且包括相邻层之间的至少一个界面（16a，16b，22a），其能够支持通过界面与 辐射。 所述限制区域（16,18,22）包括波导层（16），所述波导层（16）由相对侧由第一界面和第二界面（16a，16b）限定。 引导层（16）以使得第一和第二界面（16a，16b）能够分别支撑等离子体模式并且具有厚度（d）的方式被掺杂，以便产生积累 在层（16）外部的第一和第二界面（16a，16b）附近的等离子体激元模式，以及基本上抑制层内的等离子体激元模式。

    Thz semiconductor laser incorporating a controlled plasmon confinement waveguide
    2.
    发明申请
    Thz semiconductor laser incorporating a controlled plasmon confinement waveguide 有权
    掺入受控等离子体限制波导的Thz半导体激光器

    公开(公告)号：US20050117618A1

    公开(公告)日：2005-06-02

    申请号：US10508996

    申请日：2003-03-24

    申请人： Alessandro Tredicucci ,  Fabio Beltram ,  Ruedeger Koehler ,  Harvey, Edward Beere ,  Alexander, Giles Davies ,  Edmund, Harold Linfield

    发明人： Alessandro Tredicucci ,  Fabio Beltram ,  Ruedeger Koehler ,  Harvey, Edward Beere ,  Alexander, Giles Davies ,  Edmund, Harold Linfield

    IPC分类号： H01S5/343 ,  H01S5/10 ,  H01S5/20 ,  H01S5/22 ,  H01S5/32 ,  H01S5/34 ,  H01S5/00

    CPC分类号： B82Y20/00 ,  H01S5/1046 ,  H01S5/2054 ,  H01S5/22 ,  H01S5/3213 ,  H01S5/3402

    摘要： A semiconductor laser comprises an active region (12) which, in response to a pumping energy applied thereto, can produce a stimulated emission of radiation with a central wavelength (λ) in the far infrared region, and a confinement region (16, 18, 22) suitable for confining the radiation in the active region (12), and comprising at least one interface (16a, 16b, 22a) between adjacent layers that is capable of supporting surface plasmon modes generated by an interaction of the interface with the radiation. The confinement region (16, 18, 22) comprises a wave-guide layer (16) which is delimited on opposite sides by a first interface and by a second interface (16a, 16b). The guide layer (16) is doped in a manner such that the first and second interfaces (16a, 16b) are capable of supporting the plasmon modes, respectively, and is of a thickness (d) such as to bring about the accumulation of the plasmon modes in proximity to the first and second interfaces (16a, 16b), outside the layer (16), and substantially a suppression of the plasmon modes, inside the layer.

    摘要翻译： 半导体激光器包括有源区域（12），其响应于施加到其上的泵送能量，可产生受激发射的远红外区域中具有中心波长（λ）的辐射，以及约束区域（16,18， 22），其适于将辐射限制在有源区域（12）中，并且包括相邻层之间的至少一个界面（16a，16b，22a），其能够支持通过界面与 辐射。 所述限制区域（16,18,22）包括波导层（16），所述波导层（16）由相对侧由第一界面和第二界面（16a，16b）限定。 引导层（16）以使得第一和第二界面（16a，16b）能够分别支撑等离子体模式并且具有厚度（d）的方式被掺杂，以便产生积累 在层（16）外部的第一和第二界面（16a，16b）附近的等离子体激元模式，以及基本上抑制层内的等离子体激元模式。

    DEVICE FOR CONTROLLING FLUID MOTION INTO MICRO/NANOCHANNELS BY MEANS OF SURFACE ACOUSTIC WAVES
    4.
    发明申请
    DEVICE FOR CONTROLLING FLUID MOTION INTO MICRO/NANOCHANNELS BY MEANS OF SURFACE ACOUSTIC WAVES 有权
    通过表面声波控制流体运动到微型/纳米通道的装置

    公开(公告)号：US20100200092A1

    公开(公告)日：2010-08-12

    申请号：US12670821

    申请日：2008-07-21

    申请人： Fabio Beltram ,  Roberto Cingolani ,  Marco Cecchini ,  Salvatore Girardo ,  Dario Pisignano

    发明人： Fabio Beltram ,  Roberto Cingolani ,  Marco Cecchini ,  Salvatore Girardo ,  Dario Pisignano

    IPC分类号： F15C1/04 ,  G01N29/22

    CPC分类号： G01N29/222 ,  B01L3/502707 ,  B01L3/50273 ,  B01L3/502784 ,  B01L3/502792 ,  B01L2300/0816 ,  B01L2300/089 ,  B01L2300/0896 ,  B01L2300/165 ,  B01L2400/0439 ,  B01L2400/0496 ,  B01L2400/082 ,  B82Y30/00 ,  F04B43/046 ,  G01N2291/02836 ,  G01N2291/0423 ,  Y10T137/2196

    摘要： Herein described is a device for controlling fluid motion in a micro/nanofluidic structure of channels, comprising: a structured volume of material (30), bearing a predetermined configuration of micro/nanofluidic channels (C) for holding and transferring amounts of fluids, adapted to define at least one fluid inlet (IN) and at least one fluid outlet (OUT), and presenting a hydrophobic behaviour for the fluids to be handled; and a substrate (31) made of material with piezoelectric properties, coupled to the abovementioned configuration of micro/nanofluidic channels, bearing means for active control of the motion of an amount of fluid, including transducer means (T1-T6) which comprise at least one pair of interdigitated electrodes applied on the substrate (31), which are arranged to selectively generate a surface acoustic wave adapted to propagate on the substrate (31) and interact with the amount of fluid. The transducer devices (T1-T6) are arranged in proximity to a fluid outlet (OUT) of the configuration of channels in such a manner to generate a surface acoustic wave propagating from the fluid outlet (OUT) to a fluid inlet (IN) of the abovementioned configuration and, due to the hydrophobic condition in the channel (C) in which an amount of fluid is localised, determine an effective force at the air-liquid interface where the acoustic wave meets the liquid, whereby the motion of the amount of fluid is induced towards the direction opposite to the surface acoustic wave propagation direction.

    摘要翻译： 本文描述了一种用于控制通道的微/纳流体结构中的流体运动的装置，包括：结构化体积的材料（30），其具有用于保持和传送流体量的微/纳流体通道（C）的预定构型， 以限定至少一个流体入口（IN）和至少一个流体出口（OUT），并且对待处理的流体呈现疏水性; 以及由具有压电特性的材料制成的衬底（31），其与上述微/纳流体通道结构相结合，用于主动控制一定量流体的运动的轴承装置，包括至少包括换能器装置（T1-T6）的换能器装置 被布置成选择性地生成适于在衬底（31）上传播并与流体量相互作用的表面声波的衬底（31）上的一对叉指电极。 传感器装置（T1-T6）以这样的方式布置在通道构造的流体出口（OUT）附近，以便产生从流体出口（OUT）传播到流体入口（IN）的流体入口 上述构造，并且由于在流体的流量定位的通道（C）中的疏水状态决定了在声波与液体相遇的气液界面处的有效力，由此， 流体被引向与声表面波传播方向相反的方向。

    Floating gate memory circuit and apparatus
    5.
    发明授权
    Floating gate memory circuit and apparatus 失效
    浮栅存储电路及装置

    公开(公告)号：US4945393A

    公开(公告)日：1990-07-31

    申请号：US447286

    申请日：1989-12-07

    申请人： Fabio Beltram ,  Federico Capasso ,  Roger J. Malik ,  Nitin J. Shah

    发明人： Fabio Beltram ,  Federico Capasso ,  Roger J. Malik ,  Nitin J. Shah

    IPC分类号： G11C16/04 ,  H01L29/80

    CPC分类号： G11C16/0433 ,  H01L29/803

    摘要： A floating gate memory device comprises a channel for conducting carriers from source to drain, a semiconductor heterostructure forming a potential well (floating gate) for confining carriers sufficiently proximate the channel so as to at least partially deplete it, and a graded bandgap injector region between the control gate and the floating gate for controlling the injection of carriers into and out of the potential well. Also described is a three element memory cell, including the memory device and two FETs, which operates from a constant, non-switched supply voltage and two-level control voltages. Arrays of memory devices may also be used to detect light in a variety of applications such as imaging.

    摘要翻译： 浮动栅极存储器件包括用于从源极到漏极传导载流子的沟道，形成势阱（浮栅）的半导体异质结构，用于使载流子足够接近通道以使其至少部分耗尽;以及梯度带隙注入器区域， 控制栅极和浮动栅极，用于控制载流子进入和离开潜在井的注入。 还描述了一种三元件存储单元，其包括存储器件和两个FET，其从恒定的非开关电源电压和两电平控制电压工作。 存储器件的阵列也可用于检测诸如成像的各种应用中的光。